High Current Density and High Power Density Operation of Ultra High Speed InP DHBTs
A LOW SERIES RESISTANCE, HIGH DENSITY, … LOW SERIES RESISTANCE, HIGH DENSITY, TRENCH CAPACITOR FOR...
Transcript of A LOW SERIES RESISTANCE, HIGH DENSITY, … LOW SERIES RESISTANCE, HIGH DENSITY, TRENCH CAPACITOR FOR...
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A LOW SERIES RESISTANCE, HIGH DENSITY, TRENCH CAPACITOR FOR ,HIGH-FREQUENCY APPLICATIONS
Gordon Grivna, Sudhama Shastri, Yujing Wu, & Will Cai Sept, 2008
www.onsemi.com
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Presentation Outline
1 I t d ti / 1. Introduction / purpose 2. High frequency trench capacitors
a) MIS trench capacitorsa) MIS trench capacitorsb) High frequency “wrap-around” PIP cap.
3. High frequency PIP capacitor characterizationg q y pa) Electrical characterization and modelingb) Reliability evaluation
4. Potential enhancements / applications 5. Summary 6 A k l d 6. Acknowledgments
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1. Introduction/Purpose
A novel, modular, high speed, VLSI MOS-compatible decoupling trench capacitor with tunable frequencydecoupling trench capacitor with tunable frequency response has been modeled and electrically characterized.
The flexible capacitor design enables low Dt, drop-in capability across a number of technologies and hascapability across a number of technologies and has been qualified for both CMOS and BiCMOS applications.
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2 High frequency trench capacitors 2. High frequency trench capacitors
) MIS t h ita) MIS trench capacitors
“Typical” MIS trench bypass capacitors suffer from large series resistance and consequent poor frequency response.frequency response.
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MIS Trench Capacitors
Structure of “typical” MIS type bypass trench capacitor with implanted bottom plate
AlSi40KA
TRENCH CAPACITOR
SINGLE DIODE POLYSILICON RESISTOR
BOTTOMPLATE
BOTTOMPLATE
P+ Well
TOP PLATE
N EpiN+
P+ P+
PLATE PLATETOP PLATE
HIGH RESISTANCELOWER PLATE CONNECT
N Epi
P+ POLY400ANITRIDE DIELECTRIC
P+ POLYTOP ELECTRODE
.005 Ohm-cm Boron Substrate
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MIS Trench Capacitors
Structure of high density RF MIS trench capacitor with laterally diffused bottom plate(E t t d f F R b t l I t ti l Mi l t i d P k i S i t 2001 )(Extracted from F. Roozeboom et. al. -International Microelectronics and Packaging Society, 2001 )
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MIS Trench Capacitors
Diffused bottom plate trench capacitors lose their effectiveness as the capacitance per unit area increases, since the bottom plate resistance canincreases, since the bottom plate resistance can become prohibitively large.
As trench depth and capacitance per unit area increase further, low resistance access to the bottom plate becomes critical for high speedbottom plate becomes critical for high speed applications.
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MIS Trench Capacitors
Trench Capacitor Device Suitable for Decoupling Applications in High-Frequency OperationExtracted from International Patent Publication Number WO 2007/054870 A1, May 2007
Bottom plate backside contactcontact
Top plate frontside contactcontact
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2. High frequency trench capacitors2. High frequency trench capacitors
a) MIS trench capacitors
b) High frequency “wrap-around” PIP capacitorPIP capacitor
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“Wrap-Around” PIP Capacitor
X-section view of “wrap-around” PIP capacitor for on-chip bypass and tuning applications
N-
I
N+
P+ Substrate Trench Bottom Contact
Substrate contact or isolation trench
Bottom plate contact trench
PIP capacitor “finger”
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“Wrap-Around” PIP Capacitor
Diffusion model of trench bottom plate
The use of a highly-doped bottom liner
N+ EPI
doped bottom liner poly electrode and the consequent outdiffusion makes this
i f icapacitor function even in the presence of highly-doped buried layers which may
P+ Substrate
layers which may otherwise “break” the connection of the bottom electrode.
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“Wrap-Around” PIP Capacitor
X-section view of “wrap-around” PIP cap
top plate contactcontact trench/bottomplate contact
ltop plate
dielectric layer
contact trench capacitor trench
bottom plate
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“Wrap-Around” PIP Capacitor
X-section drawing of “wrap-around” PIP capacitor in lightly doped substrate
N-
Reduced resistance to bottom plate
P- Substrate
Substrate contact or isolation trench
Bottom plate contact trench
PIP capacitor “finger”
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“Wrap-Around” PIP Capacitor
X-section SEM of “wrap-around” PIP capacitor in lightly doped substrate
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“Wrap-Around” PIP Capacitor
The addition of a separate bottom plate enables “drop-i ” bilit
Top Plate
in” capability irrespective of the substrate doping type EPI layers
Bottom plate
type, EPI layers, thermal budget, or substrate dielectric layers
Capacitor Dielectric
P ilayers. Previous Silicon top structure
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3 Hi h f PIP it3. High frequency PIP capacitor characterization
a) Electrical characterization and )modeling
b) Reliability evaluation
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Electrical Characterization
Leakage comparison of MIS cap (no liner) on bare silicon substrate to PIP cap with bottom polysilicon liner
Current Vs Voltage
1 0E 07
1.0E-06
1 0E 09
1.0E-08
1.0E-07
C t
1 0E 11
1.0E-10
1.0E-09wfr 1, no linerwfr 5, no linerwfr 2, 500Awfr 4 500A
Current(Amps)
1.0E-13
1.0E-12
1.0E-11 wfr 4, 500Awfr 3, 1700Awfr 6, 1700A
1.0E 130 2 4 6 8 10 12 14 16 18 20
Voltage, Volt
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Electrical Characterization
Poly lined trench caps have improved linearity compared to standard MIS trench caps.
Capacitance Vs Applied Voltage
11.0
p p
10.0
10.5
/um
2
8 5
9.0
9.5
Cap
acita
nce,
fF/
wfr 1, no linerwfr 5, no liner
7.5
8.0
8.5 wfr 2, 500Awfr 4, 500Awfr 3, 1700Awfr 6, 1700A
0 1 2 3 4 5 6 7 8 9 10
Voltage, volt
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Electrical Characterization
High linearity, g y,good across-wafer uniformityuniformity(±1.25%)
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Electrical Characterization
Low leakage, excellent linearity over temperature
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Device Modeling
Layoutnf=5, np=2
Cross-sectionCross sectionnf (fingers) =3, n =2np (modules in parallel) =2
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Device Modeling
Very High Frequency Capacitor Layout nf=2, np=20
Capacitor TrenchSubstrate Contact Trench
Isolation Trench
y f p
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Device Modeling
Reduced Frequency Capacitor for audio-band filter chip
n =16 n =1nf=16, np=1
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Device Modeling
Di t ib t d R CDistributed R-C model for nf=2, NV=6. Metal inductance is optionally added.
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Device Modeling
Ceff=Im(Yij)/(2f), is the effective
itcapacitance extracted from Y-parameters; it includes the effect of series resistance
NV~8 is sufficient for the model, that is, eight vertical sections are enough forenough for ensuring accuracy
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Device Modeling
A given target capacitance is obtained by a combination of fingers and parallel sections. The lower nf is, the better is the frequency response.
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Model-Extraction
Pseudo-2D treatment is valid for the widths under considerationconsideration
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Model Extraction
A low-frequency fit is first obtained: only 1-2 parameters are tweaked; the rest are geometry-based Y t bt i d f LCR t d S t A l Y-parameters obtained from LCR meter and Spectrum Analyzer
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Model Extraction
nf=40, np=1nf=4, np=10 , p
RF parameter extraction requires S-parameter data from 2-port GSG measurements Device asymmetry can predicted using lumped element model Correctly modeling substrate resistance is very important
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3 Hi h f PIP it3. High frequency PIP capacitor characterization
a) Electrical characterization and )modeling
b) Reliability evaluation
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Reliability Evaluation
TEM Construction Analysis
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Reliability Evaluation
TEM Evaluation of Capacitor Dielectric
Trench Bottom Trench Bottom “Corner”Trench Sidewall
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Reliability Evaluation
Lognormal Distributionsof Intrinsic TDDB Failures of Intrinsic TDDB Failures
Capacitor data With Individual Lognormal MLE's
Lognormal Probability Plot 165
7.8
.9
.95
.98 4.5MV.per.cm4.75MV.per.cm5MV.per.cm
.2
.3
.4
.5
.6
.7
Frac
tion
Faili
ng
.005.01.02
.05
.1
Hours
2 5 10 20 50 100 200 500
Wed Sep 29 17:26:41 2004
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Reliability Evaluation
Maximum Likelihood FitExtrapolation to 10 V @ 150 °C
.9999
Capacitor data with Lognormal Linear Model MLE
Lognormal Probability Plot
4.5MV.per.cm
.8
.9.95.98
.995
.999
ng
4.5MV.per.cm4.75MV.per.cm5MV.per.cm2 MV.per.cm
01
.05.1.2
.4
.6
Frac
tion
Faili
.000003
.00005
.0005.002
.01
10^00 10^01 10^02 10^03 10^04 10^05 10^06 10^07 10^08 10^09 10^10
Hours
10^00 10^01 10^02 10^03 10^04 10^05 10^06 10^07 10^08 10^09 10^10
Wed Sep 29 18:23:35 2004
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Reliability Evaluation
Lifetime Estimates 10 V @ 150 °C•Quantile EstimatesF C it d t t 2 MV 7,895•From Capacitor data at 2 MV.per.cm
•Lognormal MLE and Pointwise Approximate 90% Confidence Intervals
• p Quanhat Std.Err. 90% Lower 90% Upper
7,895 years
• 0.001 193509360 121049290 69157870 5.415e+008• 0.005 265309753 165510803 95085143 7.403e+008• 0.010 309187546 192684448 110928051 8.618e+008• 0.050 469668005 292159050 168820772 1.307e+009• 0.100 586927866 364961308 211052126 1.632e+009• 0.200 768766377 478075427 276413038 2.138e+009• 0.300 933922386 581039386 335643103 2.599e+009• 0.400 1102876638 686586047 396108502 3.071e+009• 0.500 1288325603 802673961 462337302 3.590e+009• 0.600 1504957855 938577225 539528708 4.198e+009• 0.700 1777217127 1109797762 636294633 4.964e+009• 0 800 2159021141 1350632142 771571247 6 041e+0090.800 2159021141 1350632142 771571247 6.041e+009• 0.900 2827916269 1774365391 1007511006 7.937e+009• 0.990 5368207358 3399989142 1894045950 1.521e+010
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L l Di t ib ti
Reliability EvaluationLognormal Distributions
Extrinsic Failure Mode Evident
Capacitor data
.95
.98
Capacitor data With Individual Lognormal MLE's
Lognormal Probability Plot
4.5MV.per.cm4.75MV.per.cm5MV.per.cm
165
.5
.6
.7
.8
.9
Faili
ng
5MV.per.cm
05
.1
.2
.3
.4
.5
Frac
tion
F
.005.01.02
.05
0.5 1.0 2.0 5.0 10.0 20.0 50.0 100.0 200.0 500.0ExtrinsicHours Wed Sep 29 16:42:35 2004Failures
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Reliability Evaluation
Capacitor dielectric thinning on top surface after poly etchback found as source for extrinsic failures
Nitride~230A
Nitride on trench sidewall Top nitride after polysilicon etchback
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4. Potential enhancements and applications
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Enhancements
Multi-use trench process: isolation, oxide termination, substrate contact, bottom plate contact
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Enhancements
Oxide lined t h ithtrench with substrate contact openingopening
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Enhancements
Optical X-section view of oxide lined trenches with substrate contact
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Enhancements
Oxide isolated substrate contacts
SEM Highlighting deep polysilicon contact SEM highlighting dopant outdiffusionSEM Highlighting deep polysilicon contact SEM highlighting dopant outdiffusion
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Enhancements
Oxide isolated substrate contacts
Boron doped poly fill Phosphorous doped poly fill
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Enhancements
Insitu doped trench (post 1100C 45min anneal)p (p )
Boron doped Phos doped
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Enhancements
Extreme trench depth for very high capacitance on chipcapacitance on chip
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Enhancements
Potential for silicided bottom plate for further resistance reduction.
N-
P- Substrate
Substrate contact or isolation trench
Bottom plate contact trench
PIP capacitor “finger”
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5. Summary
A high-performance trench capacitor has been integrated into RF BiCMOS and otherbeen integrated into RF BiCMOS and other technologies.
A distributed trench-capacitor model has been developed and implemented in SPICEbeen developed and implemented in SPICE.
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Summary
M d l h b f ll d i Models have been successfully used in several high-frequency designs.
Capacitor has been successfully added to multiple substrates and process integrationsmultiple substrates and process integrations.
Several potential enhancements have beenSeveral potential enhancements have been demonstrated.
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6. Acknowledgments:
The authors would like to thank
The ON Semiconductor The ON Semiconductor analytical and reliability labs for their assistance and numerous analysis reports.
The entire ON Semiconductor The entire ON Semiconductor technology development team and COM1 wafer fab.