A COMPARITIVE STUDY OF THE MSI AND PROBA-V LINEAR...
Transcript of A COMPARITIVE STUDY OF THE MSI AND PROBA-V LINEAR...
Copyright 2012 |
A COMPARITIVE STUDY OF THE MSI AND PROBA-V LINEAR ARRAYS UNDER THE INFLUENCE OF RADIATION
AMICSA workshop, ESTEC- Noordwijk, 28-08-2012
Jonas Bentell, Koen van der Zanden, Thierry Colin, Siegfried Herftijd, Patrick Merken, Jan Vermeiren
Copyright 2012 | AMICSA - Noordwijk, Radiation effects for Si and InGaAs detectors 2
Overview
• Mission objectives • FPA architecture • ROIC designs • Obtained results
- TID - High and low E protons - Heavy ion
• Conclusions
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Proba - V
• Gapfiller SPOT-Vegetation Proba-V Sentinel-3 • Daily monitoring > 35o
• 3 telescopes with 34o each. • VNIR: 3-band multispectral linear CCD
- 5200 pixels on 13 μm - or 67.6 mm
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Earthcare
• ESA cornerstone mission • Clouds & dust on Earth’s radiation budget • MSI: Multi-Spectral Imager
- 4 VNS bands + 3 TIR bands(8.8, 10.8 & 12 μm) • Swath width: 150 km • Ground resolution: 500 m • Co-registration: < 75 m
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Overview
• Mission objectives • FPA architecture • ROIC designs • Obtained results
- TID - High and low E protons - Heavy ion
• Conclusions
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Proba-V: XLIN-3000 architecture
• 3*1024 pixels – 25 μm pitch • Mechanically butted with overlap
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Proba-V: ROIC design • CTIA: low lag, good linearity • CDS: noise reduction • 0.35 μm ON-Semi technology
CTIA CDS S / H BUF
CTIA CDS S / H BUF
CTIA CDS S / H BUF
CTIA CDS S / H BUF
* 1024 Pixel circuits
Output amplifiers
Dual output busses
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Proba-V: Performance
• Power: < 900 mW • Sensitivity:
- 0.19 and 32 μV/e-
- In 16 steps
• Noise level - [600 – 4200 e-
rms]
1 10 100
1E-3
0.01
RM
S n
oise
[V].
Diff
eren
tial s
igna
l.
Feedback capacitor size (fF)
10 us 100 us
IWR mode noise measurements
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MSI: XLIN-512 architecture • 512 pixels – 25 μm pitch with bilinear readout • 4 different detector materials • 0.5 μm ON-Semi technology
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MSI: material selection
Channel Wavelength [µm]
Material Tdetector SNR @100%ρToA
VIS 0.67±0.01 Si, p-on-n, 11.5 μm epi, optimized AR
Room temp 500
NIR 0.865±0.01 Si, p-on-n, 11.5 μm epi, optimized AR
Room temp 500
SWIR1 1.55±0.015 In0.47 Ga0.53As grown on InP Room temp 250
SWIR2 2.21±0.015 Extended InGaAs on buffer layer
[230-240 K] 250
0
10
20
30
40
50
0102030405060700
2
4
6
x 104
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MSI: material selection
Channel Wavelengt
h Material Q E
[%] MTF [%]
VIS 0.67±0.01 μm Si, p-on-n, 11.5 μm epi, optimized AR 80 52
NIR 0.865±0.01 μm
Si, p-on-n, 11.5 μm epi, optimized AR 56 47
SWIR1 1.55±0.015 μm
In0.47Ga0.53As grown on InP 75 52
SWIR2 2.21±0.015 μm
Extended InGaAs on buffer layer 60 52
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MSI: ROIC design
• CTIA: low lag, good linearity • Autozero: bias offset reduction
- +
V ref
S&H
Reset
0.1pF,
1pF,
Gain
AZ
- +
Video Out
Video Bus
Select
Channel
+
+ -
-
Itest
Vdet =
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MSI: Performance
• Power: < 300 mW • Sensitivity:
- 1600, 160, 20 and 10 nV/e-
• Noise level - [0.45 and 7 mVrms] - [4400 – 45000 e-
rms] - off-chip CDS for high gain
Copyright 2012 | AMICSA - Noordwijk, Radiation effects for Si and InGaAs detectors 14
Overview
• Mission objectives • FPA architecture • ROIC designs • Obtained results
- TID - High and low E protons - Heavy ion
• Conclusions
Summary of radiation tests
Array type 60Co p+ Heavy Ion Proba-V SWIR1 ESTEC, Noordwijk, NL KVI, Groningen, NL HIF, UCL, B
MSI RED ESTEC, Noordwijk, NL KVI, Groningen, NL
MSI NIR ESTEC, Noordwijk, NL KVI, Groningen, NL
MSI SWIR1 SCK, Mol-B ESTEC, Noordwijk, NL
PROSCAN, PSI, CH KVI, Groningen, NL
HIF, UCL, B
MSI SWIR2 ESTEC, Noordwijk, NL ESTEC, Noordwijk, NL
PROSCAN, PSI, CH KVI, Groningen, NL
HIF, UCL, B
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TID: test conditions
• Element: 60Co • Total dose: 10 krad(Si) • Dose rate:
- ESTEC: 1500 rad(Si)/h - SCK: 180 360 rad(Si)/h
• Observed parameters: - Dark current - Noise - Power dissipation - Linearity
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TID: dark current
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Reset and dark current levels @ 1000 ms
10000
15000
20000
25000
30000
35000
40000
45000
0 1000 2000 3000 4000 5000 6000 7000
Dose (R)
Le
ve
l (A
DU
)
Ave Px 100Ave Px 101Ave Px 102CDS Ave Px 110CDS Ave Px 111CDS Ave Px 112Reset level Px 100Reset level Px 101Reset level Px 102
Ref
TID: Power + summary
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Ref
RED NIR SWIR2 REF 5856 5861 5863 REF 5877 5885 5891 REF 4847 4858 4860
Noise 99% 99% 99% 99% 99% 100% 100% 99% 103% 97% 103% 103%
Idark 103% 145% 160% 160% 62% 157% 182% 147% 109% 104% 134% 93%
Lin 97% 93% 96% 90% 90% 95% 95% 96% 67% 97% 143% 125%
Proton: test conditions
• Element: p+
• Fluence: 1010 p+/cm2 • High Energy:
- 150 to 190 MeV - Possible Latch-up effects - Dark current change
• Low Energy: - 30 MeV - [2.2.10-7 – 2.4.10-7] Rad(Si)/proton/cm2 2.3 krad(Si) - Dark current change
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NO Latch-ups observed
Low energy Proton: dark current
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0.00E+000 2.00E+009 4.00E+009 6.00E+009 8.00E+009 1.00E+010
2.00E-013
4.00E-013
6.00E-013
8.00E-013
1.00E-012
1.20E-012
1.40E-012
1.60E-012
1.80E-012
Dar
k cu
rrent
[A]
Dose [protons/cm2]
Id ROIC 0 Id ROIC 2
0
0.01
0.02
0.03
0.04
0.05
0.06
0 2E+10 4E+10 6E+10
4831483253645365
Dose (/cm2)
Dar
kcu
rren
t (pA
)0
0.005
0.01
0.015
0.02
0.025
0.03
0 2E+10 4E+10 6E+10
5858586458655866
Dose (/cm2)
Dar
kcu
rren
t (pA
)
Low energy Protons: SWIR2
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Heavy ions: test conditions
• Element: Ne, Ar, Kr and Xe ions
• Fluence: 107 ions/cm2 or 175 SEEs • LET (Linear Energy Transfer):
- [6.20 – 67.70 MeV.cm2/mg(Si)]
• Effects to be studied: - SEFI: Single Event Functional interrupts - Soft Latch-ups - Hard Latch-ups
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Heavy Ions: SEFI
• Left most array irradiated • Right bar: indication of the current
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Heavy Ions: Latch-ups
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Heavy ion: cross-section
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0 10 20 30 40 50 60 70
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Cros
s sec
tion
LET
Discussion • TID:
- Affects detector, not ROIC - Most probably increase in G-R current - SWIR2: surface leakage current
• Protons: - Low energy protons: increase in Dark current detector - Masked by low bias for MSI detectors - No increase in blinkers / RTN pixels seen - High energy protons: SEE ROIC - No effect observed
• Heavy Ions: - Only affecting ROIC - Complex (digital) circuits are more vulnerable - Commercial circuit design, no precautions, BUT fully static
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Overview
• Mission objectives • FPA architecture • ROIC designs • Obtained results
- TID - High and low E protons - Heavy ion
• Conclusions
Copyright 2012 | AMICSA - Noordwijk, Radiation effects for Si and InGaAs detectors 28
Conclusions
• 3 different detector materials • 2 different ROICs • 2 different ROIC technologies
• TID: dark current increase • Protons: dark current, NO blinkers • Heavy ions: acceptable cross-section.
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Questions ??