A-A--OG3 122 RCA CORP LANCASTER PA SSD-ELECTRO-OPTICS AND DEVICES F/G 9/1

MAN7FATURING METHODS AND TECHNOLOGY MEASURE FOR FABRICATION OF--ETC(Lfl

OCT 79 B B ADAMS, M F DEVITO, W L KROWN OAAK7-78-C-OIZO

UNCLASSIFIED. ML

I Manufacturing Methods and Technology Measurefor Fabrication of Silicon Transcalent Rectifier

Interim Technical Report

Period Covered:

17 December, 1978 through 22 October, 1979

I

I

I

JContract No. DAAK70-78-C-0120

I Prepared by:B. B. Adams D1SIf !A.'; -- -"M. F. DeVito Approved for release;W. L. Krown Distribution UnlinitedR. E. ReedI

I'

SUMMARY

This report describes in detail the more important steps in thefabrication and testing of the confirmatory samples of the MM&TSilicon Transcalent Rectifier program. Factors used in theselection of the prototype design are presented. The data fromall ten confirmatory samples including description of test cir-cuits and test results are contained herein as well as somedecision making data taken on additional devices.

The ten confirmatory sample devices successfully passed all ofthe inspections required by the contract. All devices werethen shipped to MERADCOM on September 18, 1979. Government ac-ceptance of the shipment is awaited.

o. Accession For

DDO WT 3-n ,. C - 12. -A :C di ...

:al

4 3

'4 ;;-7 -....-... ......... . . . -

I Unclassi-fied

SECURITY CLASSIFICATION OF THIS PAGE (Won Data Entered)

REPORT DOCUMENTATION PAGE BEFORE COMPLETING FORM1. REPORT NUMBER "2. GoVT ACCESSION NO. 3, RECIPIENT'S CATALOG NUMBER

4 TITLE (and Subtitle) 5. TYPE Q_.REPOr.APERl, D COVERED.; Manufacturing Methods and Technology / 17 De 82 n itS- ,

Measure for Fabrication of Silicon 17. P78-22 OG79J Transcalent Rectifier, -IS. PERFORMIG O--. REORT NUl7. AUTHOR(a2 6. CONTRACT OR GRANr NUMBER(.)

B.l.Adams W. L./KrownF.'DeVito R. E./Reed AAK 7-78-C-9I20 I

0.PRORAMELEENT. PROJECT. TASK9. PERFORMING ORGANIZATION NAME AND ADDRESS A0 PROGRAM ELEMEATWORJRCA Corporation AREA & WORK UNIT NUMBERSSSD-Electro Optics & Devices /New Holland Avenue Confirmatory SampleLancaster, PA 17604 Phase

II. CONTROLLING OFFICE NAME AND ADDRESS n REPORT DATEU.S. Army Mobility Equipment R&D Commandq/ ct479 'Procurement and Production Directorate 1lWUM6ER OF PAGESFort Belvoir, VA 22060 ..f6_

14. MONITORING AGENCY NAME & ADDRESS(l different from Controlltin Office) IS. SECURITY CLASS. (of this report)

Unclassified

1Sa. DECLASSIFICATION DOWNGRADINGSCHEDULE

6. DISTRIBUTION STATEMENT (of this Report)Approved for public release; distribution unlimited, except thatthe information presented is not to be construed as a license tomanufacture or sell the device described without permission.

17. DISTRIBUTION STATEMENT (of the abstract entered Ih Block 20. if different from Report)

18. SUPPLEMENTARY NOTES

19 KEY WORDS (Continue on reverse side if necessary and Identify by block number)Envirormental testing Statistical analysis Heat-PipeIon implanted Transcalent Rectifier Power DiodeWebless wick "Go", "No-Go" gauge IsothermalConvoluted and nononvoluted Thermal resistance

20 ABSTRACT (Continue on reverse side if necessary and Identify by block number)SRA-lhas successfully completed the fabrication and testing of the ten confirma-tory samples;. This report thoroughly describes the test results as well asthe basis for selecting the prototype design. It also includes a picture orblock diagram of each test circuit utilized. All devices passed all inspec-tions with a yield of 100%.

DD I JAN 7, 1473 EDITION OF I NOV 65 IS OBSOLETE Unclassified 9L9-~ I~- SECURITY CLASSIFICATION OF THIS PAGE ("orn Date Enteredt)

UnclassifiedSECURITY CLASSIFICATION OF THIS PAGE(Whefl Dolo £ntored)

Unclassit iedSECuRITY CLASSIFICATION OF TwIS PA,-ErWS,, D.'. 1'

TABLE OF CONTENTS

Section Page No.

DD 1423

SUMMARY 3

TABLE OF CONTENTS 5

LIST OF ILLUSTRATIONS AND TABLES 8

I. INTRODUCTION 10

II. DEVICE 10

A. Description of Device 10

III. PROCESS AND FABRICATION IMPROVEMENTS INVESTIGATED 10

A. Ion Implantation 12

B. Webless Wicked 12

C. Tungsten Button - Convoluted 12

D. Tungsten Button - Nonconvoluted 12

E. Conclusion 12

IV. ELECTRICAL, MECHANICAL, THERMAL AND ENVIRONMENTAL 15INSPECTION CONFIRMATORY TEST PROGRAM

A. Group A Inspection 15

B. Group B Inspection 24

C. Group C Inspection 26

D. General Data 36

V. TEST EQUIPMENT 36

A. Surge Current Test Set 43

B. Forward On-State Voltage Test Set 46

C. Thermal Fatigue Test Set 46

5

11

Section Page No.

'J. TEST EQUIPMENT (Cont.)

D. Blocking Current Test Set 46

E. Blocking Voltage Life Test 53

F. Thermal Resistance Test Set 53

VI. CONCLUSIONS AND RECOMMENDATIONS 56

VII. DISTRIBUTION LIST 59

6

LIST OF ILLUSTRATIONS AND TABLES

Figure PageNo. Title No.

1 Transcalent Rectifier J15401 Cross Section 11

2 Cross Section Showing Webless Wick 13

3 Prefabricated Cathode (Emitter) Heat-Pipe 14

4 J15401 "Go-No-Go" Gauge 19

5 Reverse Current at +25°C 21

6 Thermal Resistance 21

7 Reverse Current at +1250C 25

8 Forward Voltage Drop 25

9 Post Surge Reverse Current 27

10 Reverse Recovery Time 27

11 Post Barometric Pressure Reverse Current 28

12 Post Blocking Voltage Reverse Current 28

13 Post Thermal Shock Reverse Current 31

14 Post Thermal Shock and Moisture Reverse Current 31

15 Post Salt Spray Reverse Current 32

16 Post Thermal Fatigue Reverse Current 32

17 Post Thermal Fatigue Thermal Impedance 34

18 Post Shock and Vibration Reverse Current 34

19 Post Shock and Vibration Thermal Resistance 35

20 Statistical Distribution of Dimension A 35

2] Statistical Distribution of Dimension B 41

22 Statistical Distribution of Dimension C 41

23 Statistical Distribution of Dimension D 42

24 Statistical Distribution of Dimension F 42

7

Figure Page

No. Title No.

25 Repetitive Surge Current Test Set 44

26 Semiautomatic Multiple Surge Current Test Set - 45Block Diagram

27 Forward On-State Voltage Test Set 47

28 Forward On-State Test Set - Block Diagram 48

29 Thermal Fatigue Test Set 49

30 Thermal Fatigue Test Set - Block Diagram 50

31 Blocking Current Test Set 51

32 Reverse Blocking Current Test Set - Block 52Diagram

5433 Blocking Voltage Life Test Set

34 Blocking Voltage Life Test Set - Block Diagram 55

35 Thermal Resistance Test Set 57

36 Thermal Resistance Test Set - Block Diagram 58

d

TABLES

Table PageNo. Title No.

1 Sample Size 16

2 Physical Dimensions of Confirmatory Samples 17

3 Statistical Analysis of Dimensional Data 18

4 Electrical Data 22

5 Initial and Final Thermal Resistance 23

6 Post Environmental Data 30

7 Statistical Analysis of Confirmatory Data 37

8 Key to Table 7 38

9 Electrical and Environmental Test Equipment 39

9

"7 zij

I. INTRODUCTION

This report is the Interim Technical Report describing thework performed by RCA, Lancaster, PA during the confirmatoryphase of the contract coverinq the period of 17 December1978-22 October 1979. Work was performed in accordancewith the DRDME-EA Purchase Description, dated 16 November,1977 to the MERADCOM Semiconductor Device, Silicon Trans-calent Rectifier Specification, dated 6 June 1978, is at-tached to the contract. The scope of the contract coversthe MM&T tasks for fabricating a semiconductor device, sili-con Transcalent rectifier, RCA type J15401 and the subse-quent pilot production of the device.

Although this report covers the confirmatory phase of theprogram, the 24 months duration program will establish theproduction engineering techniques and verify a pilot produc-tion capability for the J15401 silicon Transcalent rectifierconforming to Fig. 1 of this report. Electrical, thermaland environmental inspections are a part of this report perDD 1423 of the contract.

II. DEVICE

A. Description of the Structure

The Transcalent rectifier type J15401 is thoroughly de-scribed in the report entitled, "Manufacturing Methodsand Technology Measure for Fabrication of Silicon Trans-calent Rectifier, Interim Technical Report, dated January1979. The above report includes a Flow Diagram for theJ15401 rectifier wafer metallizing, contouring andtesting and a Flow Diagram for the assembly and proces-sing of the J15401 rectifier. Included also are manystep by step procedures utilized in the processes de-scribed. The report stipulated will serve as an aid tothe understanding of this report, however, the crosssection drawing of the Transcalent rectifier will conformto Fig. 1 of this report.

III. PROCESS AND FABRICATION IMPROVEMENTS INVESTIGATED

All ten confirmatory sample rectifier devices were fabri-cated utilizing as much as possible the recommendationsgiven in RCA proposal DP-8135 and the descriptions given inthis report.

F'ur product design variations were tested in the confirma-tory sample phase. However, the differences were slight asthe outline or interface surfaces of the device remainedthe same and the performance characteristics were identical.Each variation was included as a possible production im-provement consisting of the following items.

10

-i i-i i ,

F2.250-

NOM4INAL

D1.9)

MAX.

.07 CATHODE _'C)NTACT.650 + .00SURPACT;

I 1HUT-PIPEAIR FL0W

K

A

A ~CERARIC

5.00sIJcIMAX. CI

VAPOR

ANODE CONTACT SURFACE

(2) 3/8-24 3 PuDs

(2) 3/16 SOCKETSDDlENSIcNS ARE~ IN INCHES (ALLEN WRENCH)

0TEM~PERATURE MEASURF)IENT POINTNOTE - THREADS - 0.550" MIN~.

I Irr Ti

A. Ion Implantation

Two units were successfully tested which were ion im-planted with a boron Ndose 6 x 1015 at 200 KeV onono~ side and a phosphorus Ndose = 6.5 x 1015 at 180Koy on the other side. There was no detectable differ-ence in electrical performance of the ion implanted vs.the standard process rectifiers. Ion implantationeliminated five of the nine process steps and substi-tuted the two implants.

The ion implantation was investigated as a futureproduction method. Unfortunately, the time for im-planting with our equipment was 20 minutes per waferfor the boron side alone. One side of a wafer couldbe boron doped in 3.5 minutes with our standard pro-cedures, and this time could easily be cut in half bydoubling the wafer boat size. A hot source implantercould implant economically, but the contractor doesnot intend to buy one at the present time. Consequently,standard doped wafers will be used in the pilot run.

B. Webless Wicked

This concept is shown in Fig. 2. The anode portionof the cross section shows a webless wick. Converselythe cathode portion (ceramic side) displays a webbedwicked assembly. Eliminating the wick is a definiteprocess improvement which helps to make the devicemore manufacturable. Consequently, this approach willbe used in the pilot run.

C. Tungsten Button-Convoluted

The convoluted design was incorporated into the cathodeheat-pipe to reduce low temperature stresses. Fig. 3displays the convoluted concept. Test results indicatethat the rectifier does not need the convolution at lowtemperatures which simplifies the construction of thepart in question. Confidence was gained when two non-convoluted designs were tested down to -550 C which ismuch more severe than the -250C test stipulated by thecontract.

K.Tungsten Button - Nonconvoluted

This approach which can be seen in Fig. 2 has beenadopted as the pilot run design for reasons discussedunder C.

E. Conclusion

The design of the pilot run devices includes the outlineof Fig. 1, standard doped wafers, webless wicks, and non-convoluted cathode strain sleeves. This combination of

12

R U N Electronic Date May 15. 1978 Page 1.0R O ~ o poensEngineering Specification 30-2-bWfl

Engineeringh Standards I industrial Tube Division ILancaster PA.

Subject U.TIHILP A ,Sl Y WILDED Cd -

Super.

Fig. 2 Cross Section Showing Webless Wick

Webless Wick

Webbed Wick

V A ',AU TION USS Orlyr the lbin's ii f 0tfsd in C .S 33-33-805kNL~Ss 0 fCERwfE 5.< *N t),MENSi Th5 ';IO-' R ITUo,, TS),,(.uANCES ARE DESIGN CENTERS

'i h /tI 1) DI. Y/At

TOSdrawrng-, and specifications are the property of RCA Corporation. Electronic Comiponents and Shall not be itSproduced or copied or used as the basis for the mnantilactute or sale of apparatus and or devices without permission

13

Exhaust Tube

End ap .Threaded Recess

iConvolution

Fviure 3 Pre-~Fabricatea Cathode (Emitter)

Heat-pipe

14

features has been proven acceptable via the confirmatorytests and they will remain in force as part of theidentity of the J15401 Transcalent silicon rectifier.

IV. ELECTRICAL, MECHANICAL, THERMAL AND ENVIRONMENTAL INSPECTIONCONFIRMATORY TEST PROGRAM

Ten silicon rectifiers were tested during the ConfirmatorySample phase of this program. The total sample consisted offour variations. The serial numbers and corresponding con-struction variations were as follows:

Ser. No. Variation

11-2 Ion Implanted11-3

J149 Webless WickedJ150J151

J157 Tungsten Button: ConvolutedJ160J162

J156 Tungsten Button: NonconvolutedJ163

Due to the variations in construction, the number of unitssubjected to each environmental test was equal to orgreater than the sample size listed in the confirmatorytest plan previously issued. Table 1 lists the plan'ssample size and the actual number of devices tested. Inaddition, it lists the permitted percentage of failures.

A. Group A Inspection

1. Subgroup 1

All of the Transcalent rectifiers were visually andmechanically inspected in conformance to method2071 and Fig. 1 of the specification as modified bythe Interim Engineering Report dated January 1979using the specified method 2066. The actual measure-ments of the ten confirmatory J15401C rectifiers arelisted in Table 2. Table 3 shows the results of astatistical analysis of these data which indicatethat all of the devices met the specified dimensionsJ with margin.in addition to taking actual measurements all thedevices were checked using the "go-no-go" gaugeIshown in Fig. 4.

15

0 D 0 0 0 0 00

C) 0 C0 0 0 CD 0D 0C 0

09

N-- 4

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~0 C0 0 0 0 0D 00Lr) () CN -4 C1 C-4

0

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16

Pc3 51C 2

Phlysical Dinrinsiofls Of ConfirXnt Ory SanpleS

Device DF# A BCDF

11,2 4.761 3.456 0.640 1.808 2.100

113 4.761 3.464 0.650 1.834 2.100

J149 4.737 3.447 0.635 1.800 2.104

JI50 4.751 3.463 0.647 1.806 2.101

J151 4.744 3.455 0.641 1.805 2.100

3156 4.748 3.476 0.624 1.800 2.100

J157 4.723 3.465 0.632 1.790 2.102

3160 4.749 3.472 0.631 1.792 2.106

J162 4.748 3.472 0.628 1.804 2.102

J163 4.718 3.463 0.635 1.803 2.100

17

Table 3

Statistical Analysis of the Dimensional Dataof the Confirmatory Samples

Character Avg. Sigma MIax. Min. Chi-Sq. N

Dim. A 4.744 0.014 4.761 4.718 8.38 10

Dim. B 3.463 0.009 3.476 3.447 2.95 10

Dim. C 0.636 0.008 0.650 0.624 3.82 10

Dim. D 1.804 0.012 1.834 1.790 12.40 10

Dim. F 2.102 0.002 2.106 2.100 15.21 10

18

Fig. 4 J15401 "Go-No-Go" Gauge

No-"

2. Sub(Iroup 2 - iPes-t Temperature TA =25 + 30 C

All 1 cm f 11nmi tory Sd. 1o~were tes ted for rever securrent, ire and reverse voltage, Vr, under theconditions specified for method 4016.2. rig. 5is a histogram of the reverse current measuredunder the conditions in the specification.Table 4 lists the detail data.

From the statistical data we can expect all of themeasurements to be less than 1.2 m.A or 8% of thespecified 15 mA maximum.

Prior to submitting the devices to electrical testthey all were tested out to 1000 volts of reversevoltage to insure that a sufficient safety marginexisted.

3. Subgroup 3 - Thermal Resistance

The thermal resistance of the Transcalent recti-fiers was measured using the specified methoddescribed in paragraph 4.6.1 of the specification.Each rectifier was calibrated for a temperaturedependent parameter by recording the forward volt-age drop at 4 amperes at several temperatures.The thermal resistance (RejC) was tested at 250amperes of heating current, interrupted by a shortperiod of time (less than I msec.) when the cur-rent was reduced to the metering value of 4 amperes.The forward voltage drop across the device wasmeasured and used to determine the junction tem-perature from the calibration data. Simultaneously,the external temperature of the heat-pipes wasmeasured and recorded. The difference in tempera-tures divided by the input heating power is thethermal impedance (transient) or resistance (steadystate) of the device. The values of thermal re-sistance calculated from the data measured on theten confirmatory samples are shown in Table 4.Fig. 6 is a histogram of these data. Thermal re-sistance calculated on the same devices after theenvironmental tests are listed in Table 5 with theinitial values for comparison.

20

H 1ETI'IIRM LIATAt ; 1)

LOWER CELL LIM1ITCELL WIDTH AND NUMBER OF :EL.L.5 :.5 C02 -'.

V-RT IALE:1-:.I AR: I R+2-5

r.HARACTERl-ITIC-" IR-+25 C

AVERAG'E - 0.-822QS I GMA-- 0. 1250599856.-'j MAX I MUM- ). 92

QM I N I MIIM-.- 0.,ALimit'.-I~AMLE ... 10,:i 115 mA Max.4

5+ 04+

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S 0 0 00 0 0 0

.. , ,. 7 7 7 8 : 9 94 ' I, 4. 8 "- , 4

Fig. 5 Reverse Current at +259C, (mA)

ITi.-,toqram Data (3)

LOWER CELL L IMIT ,CELL. WITITH AND NUMBER OF C:ELLS ..:E: .02 25VERT ':Wf:ALE: 1CI IAR: R-iIJC

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2+ 010 01 + 0001 0++ +.+.+.++ +-. ++. +++

:) 0 0 0 0 C) ) C 0 0 0 0

, () 1 1 1 2 :3 2 : 4 4 5Y 15937 1 5 9 7 1

Fig. 6 Thermal Resistance, RejC (oC/W)

I21

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23

Two of the devices, Li (i implanted) and J163(noncnvclite;d) , had initial Thermal impedancemeasurements at the upper ]imi o tm -... f the specifica-

tion, 0.2 0 C/W. Since similarly constructed devicesin the confirmatory sample, T1-2 and J156, hadinitial normal measurements of 0.10 C/W and 0.070 C/Wrespnectivelv, it is nor believed that the highmeasurements are construction orientated, but rathera normal variation.

4. Subroup 4 - Test Temperature of Case: 1.25 + 6°CReverse Current, ir, and ReverseVoltage, Vr

The aevices were tested under" the specified condi-tion., by method 40.6.2. The specificaiton limitfor maximum peak current is 60 mA. The detaildata measured is i-;sted in Table 4. Fig. 7 is ahistogram of the distribution of the ir measuredat a reverse voltac , of 800 V. These data indi-cate that all the devices were well within themaximum limits specified.

B. Group B Inspection

1. Subgroup 1 - Forward Voltage, Vf: Test at RoomAmbient Temperature of 25 + 3°C

The peak forward voltage drop was measured acrossall of the devices using method 4011.3. The deviceswere conducting an average current of 250 ampereswhen the measurements were made. Since the currentconducted by the device is nearly 1800 of conduc-tion angle, the peak current is approximately 800amperes and the PMS current is about 400 amperes.

During the tests, the Transcalent rectifiers wereallowed to reach thermal equilibrium and the heat-pipe was confirmed to be isothermal. Room ambientair was blown across the fins to limit the tempera-ture of the heat-pipes to 100 C.

The individual data are listed in Table 4 and thedistribution is shown in Fig. 8. All devicespassed.

24

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2. Subgroup 2 - Suiqe Current, ifTest Temperature, TA - 25 + 30 C

All confirmatory samples were tested under the con-ditions listed in the specification using method4066.2. The surge current test was performed inthe RCA owned test circuit that was developed forthe J15371 Transcalent thyristor under Contract No.DAAB07-76-C-8120 and modified to test the recti-fiers. The pulses of surge current were repeatedat a rate of one pulse per minute for ten totalsurges. The 800 volts of reverse voltage, Vr, wasreapplied following each surge. After the surgetest, the reverse current was remeasured to confirmthat the 4000 amperes peak surge currents did notdamage the devices.

The values of reverse current measured after thissurge test are listed in Table 4 and the distribu-tion is plotted in Fig. 9. Comparing these datawith those measured initially (reverse current -250C) indicated the confirmatory samples were notaffected by the surge test.

3. Subgroup 3 - Reverse Recovery Time, TrrTest Temperature TA = 25 + 30 C

All devices were tested for reverse recovery timeper the procedures of method 4031 of MIL-Std-750B.A modified circuit as outlined in the JEDEC Publi-cation No. RS282 was used. This circuit utilizesthe circuit parameters specified, however, the IFMis standardized at 125 instead of 50 peak amperes.

The data measured on the engineering samples arelisted in Table 4 and the distribution shown inFig. 10. Agaia, the devices passed with margin.

C. Group C Inspection

1. Subgroup 1 - Barometric Pressure Reduced

All of the confirmatory devices were successfullytested under the conditions listed using thespecified method 1001.1. A device which arcsover or exhibits harmful coronas that deterioratethe device is considered a failure. After ex-posure to the low pressure test the devices weretested for reverse current per Subgroup 2 of Table1. The detail data is listed in Table 4 and thedistribution plotted in Fig. 11.

26

Ili !;tc ji(,rw El t,i (6)

LOWER< -ELL L IIT, IELL WIDTH Arid NIIME:ER OIF CEL.L.'; -- el 25VIRT . ALE : 1

f:1-IARA1:] EIR I - -E: IRCHARA,~ 1EfV-I1 f'CCT IRWAVERAGE- ). 712'-* I GMA - -,o 11 c .5:A-,.:=5

T MAXIMUM- " ..M I NI MUIM.... 51 Limit

>, .AMFLE-- -. 1 15 MA Max.

o 4+ 03+ Elo 2 0 0D1+ DEl EI]

+ -. +4+.--+. +++++-+++4 --+-+-4.+4

. . . . . -O 1 1 1 1 1 1 1

4 ; L 7 : - 1 2 1 4 5 .5=5 55 5 5 5; 5 5 =

Fig. 9 Post Surge Reverse Current, Ir (mA)

H I';Ti-AM DATA E ; 5)

LOWER F:ELL LIMIT,CELL WIDTH ANDr NUMBER OF C:ELL'; :1.0 .rwi2 -,VERT ALEl: 1.C:l IAR': TlI';,

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. . . . . . . . . . . . .

T U 1 2! ', 5 ,7 '? 1 2 :.. 4. , 17': A:." 4 _, :: , .-' 4

Fiq. 10 Reverse Recovery Time, Trr (wsec)

27

H 1-TI-NiciRAM I A[AU7]

LOWER CELL LIMIT ,CELL. WIDTH AND NUMBER OF CELL: 20 0 .15 25VC-R I* '14 ALE: 1

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Pig. 11 Post Barretric Pressure Reverse Current, '2 (riA)

HI S;TOOiRAM DATA £;t73)

LOWER CELL LIM1IT ,CELL WIDTH AND NUMB-ER OF CELLS= : .01 4 S2'A :RJ SZC ALE:1I

C:HAR " : O I SYL I TI:HARACI1 ER I ST II U*-F*OST DYLT I R

'A"VERAGE- 0). C,54":.IGMA-- - 0. 1o:J4::Aq972r1MAX IMUM11- 0.72LitM I NIMUM.- 0. 46

C)SM -- ) 15 mA Max.00

7 + 07+ El5+ El

,:: El

2+ El ElI +- 0 El

+-4+ + 4 1 14-+ +4t+f+++ -*

1 2 :4.5 c 7 -8 c 0 1.4/14 4 44 4.-4-4 4 444

Fig. 12 Post Blockina Voi-taae Reverse Current, 1 r (mA)

28

I2. Subgroup 2 - Blocking Voltage Lite Test Tem-

perature: Tc = 125 + 60 C

All of the confirmatory devices were tested for200 hours, each under the conditions specified,using the method of para. 4.6.2. After exposureto the blocking voltage life test, the reversecurrent was measured and recorded. The detaildata measured is listed in Table 6 and the dis-tribution of the data plotted in Fig. 12. Alldevices passed with margin.

The test plan required that only three devicesbe tested for this parameter. Since four dif-ferent types of devices made up the samples (seeSec. IV) it was decided that all ten devicesshould be tested for this parameter for a com-plete evaluation.

3. Subgroup 3 - Thermal Shock, Moisture Resistanceand Salt Atmosphere Tests

All the confirmatory devices were tested forThermal Shock using test method 1051.1 and theconditions stated in the specification. Afterfive cycles, the rectifiers were removed fromthe environmental chamber and two were submittedto the Moisture Resistance test, method 1021.1.

Reverse current measurements per Subgroup 2 ofTable 1 of the specifica-ions were taken as acheck at this point to determine if the deviceshad survived the Thermal Shock and Moisture Re-sistance tests. All the units passed. Detaildata is listed in Table 6 and the distributionsplotted in Figs. 13 and 14.

The two devices (112, 113) which had been sub-jected to the Moisture Test were subjected to theSalt Atmosphere test method 1041.1 for 24 hours.After the test, the salt was washed off of thedevices whi'ch were then examined. The markingswere legible and there was no evidence offlaking, pitting of the finish, or corrosion thatwould interfere with the application of the de-vices.

Reverse current tests per Subgroup 2 of Table 1of the specification were performed, the detaildata are listed in Table 6 and the distributionis plotted in Fig. 15. All devices passed withmargin.

i'I 29

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(n ~ ~ 0W n n n %0 %0 0 1

1-3 t-)"'

4)O~~. *30 0 .

(N 0 0 0OMA

flitix!rau 3tan (9)

LOWER CELL LIli'T,CELL. WIDTH AND NLIME:ER oF CELL'. : .40 .)2 25VER+ ':c ALE: Ir.l+A: PCI'l7y'3 1HER SH

C-:HARACTER I $T I C:-F'ST THER SHAVERAGE-" .5,: 25SI'GMA~.- 0.....79988:85 . 1

> MAXIMLIM- 0i.69MINIMUM- 0.5 I

0AMPLE---8 15 mA Max.3+ 0 02+ 0 0 01+ 0 0 0 1+44-+ ++++-++++4'++++++-4+-+'4++

0 0 0 C) ) C) C) C) 0 0 C) 0

4 4 4. , ', 6 7 7 8 0 84 !i 2,6 4 8 2 6 4 :

Fig. 13 Post Thermal Shock Reverse Current, Ir (mA)

liE;togramn Data (10)

-EL- ANi HUMBER OF -....- .3 0.2 25VER rSCALE:1.HAR:TH SH MO

AVERAGSE- Q.41SIMA..-. 0M A X M M - 0 -.4 --- --. L m t . .. .

> MINI MUM- 0.41SAMPLE~-- 2 15 mA Max.

- - - .....-- - -2+ C]1+ 0

S 0 1 .) CI o o C) ) :0 0 0 I3 : -:- -4--4, - .-- - -,4-- -7- 7- 4 ------ -

79 3 7 1 5 4 .3 7 1 5 9 :3

Fig. 14 Post Thermal Shock and Moisture Reverse Current, I,- (mA)

31

I

Histogram Data (11)

LOWER CELL LIMIIT,CELL WIDTH AND' NUMBER OF CELLS . ( .01VERT S;C:ALE: 1C:I 4A PCr:.;T -;ALT '-;P

CHARACTER I C;T I -F'CT S;ALT F';FlAVERAGiE- (1. 41'- I GMA .......... 0wMAX IMIM- (. 41

> MINIMUM- 0.41 LimitaSAMFL.E . 2 15 mA Max.

0 2+ 01+ 0

+ 1- +4.++444.++++++4++++4+++++C '() C ) C 0 ' - 0 C()

:: :': 4 4. 4 4 4.5 7 9 1 ::5 7 9 1 ---- 7 9

Fig. 15 Post Salt Spray Reverse Current, Ir, (mA)

HI-'Ocw-RAM DATA[; 133

LOWER CELL LIMIT,CELL WIDTH AND NUMBER OF C:EL:-c. .4.5 .(-)5 25'A:fT '- CALE: ICI IAR: P'CI'." TH FRT

CHARACTER I'-;T I C:-P';T TH FRT,AVERAGE -. 6,71'- DMA ......0. (076'9.4'75-4MAXIMIM- 0.7-MINIMUM-- 0.56mnS~~i AMFLE-... I -

CAMP.E- 1015 mA Max.

_6+ 00 5+ 0o 4+ 0

J+ 0 0 0 1 1 1 1 1 1

4 1 6 7 9- 7 0 1 2 :-: 4 5 -5I 5 =. 7-;59015 2345=;56=

Fig. 16 Post Thermal Fatigue Reverse Current, Ir (mA)

32

4. Subgroup 4 - Thermal Fatigue Test

All of the confirmatory samples were tested for re-liability under the specified Thermal Fatigue TestConditions and Spec. paragraph 4.6.3. The 'on"and "off" times were two minutes each. The airflow across the devices was adjusted so that whenthe devices were conducting, the case or heat-pipetemperature was 90 + 10 C max. and 30 + 100C min.The devices were subjected to a minimum of 200 "on-of f" cycles. Ten measurements per Subgroup 2 ofTable 1 were made. Detail data are listed inTable 6 and distribution is plotted in Fig. 16.

Since the sample consisted of four different con-structions, an additional post thermal fatigueparameter was measured, Thermal Impedance. Thesedata are listed in Table 6 and the distributionis plotted in Fig. 17.

All devices passed. The ion-implanted devicescame closest to the specification limit of 0.20C/W.Because of this high thermal impedance and otherconsiderations, ion-implanted devices will not beused in the pilot run of this MM&T contract.

5. Subgroup 5 - Shock & Vibration Tests

Five of the confirmatory samples were shock testedin RCA's Environmental Laboratory, Lancaster, PAusing the specified conditions and test method2016. 2.

Following the shock tests, all devices were sub-jected to a vibration test of variable frequencydescribed in the Specification and Test Method 2056.After the shock and vibration tests, the reversecurrent measurements at 800 volts and the thermalresistance measurements of Subgroups 2 and 3 ofTable 1 were repeated successfully to verify theintegrity of the devices. Detail data are listedin Table 6 and the distributions are plotted inFigs. 18 and 19.

The Acceptance Test Procedure required that onlytwo devices be subjected to the Shock and Vibra-tion Tests. Since four different constructionswere represented in the sample, RCA subjected asample of each to the environmental test as fol-lows:

33

HIC.,roKF SAMFLE - 10

L,4 4+ 03+ 002+ O0 El Limit1+ oOO 0.20 C/A Max.

44' ++ 4 +4-4 44++- + 4.+

, 1 1 2 . .. 4 4. .:, 6 7 7

7 3 9 5 1 7 ,3 9 5 1 7 .7: 9

Fig. 17 Post Thermal Fatique Thermal Impedance (°C/W)

Histogram Data (12)

LOWER CELL LIMIT,C:CELL WIDTH AND NUM:ER OF CEL.L'-: " 10 .'5 5VERT SCALE: 1CrIiAR:'7:H VIR

CHARAC:TERI :,TIC-:,H VIRAVERA-E.- 0. 61'-,I GMA- -.. (- ).. .I

. MAX IMUM- 0.74> MINIMUM- 0. 4:,i LinLit

SAMPLE- - 5 15 rrA Max.

2+ 0 0l1+40 0

+-4+-44-- 44- ++4+-4-4 4++4 4-0 0,..++ ++++ + +.+..+++ .+ 0 0 0- 0 1 I( 1 1 1 1 1

% 5 d, 7: ' 1 2 4 = _

Fiq. 18 Post Shock and Vibration Reverse Current, Ir )

34 4

ir z - ... .. ...... _ _....... _ _ -

LOWER CELL LI1]-l ,C:ELL WI[iTH AND NU .L'F;': OF E.L '- . 03 .'!: 2 25

VERT S;:AL.E: ICHAR:F IN i'4Y< R'..!C:

I::HA AI.:""E I '-- I --- F' I N ENVR F, JCAVIiRAC.E- 0. 1S I GMA ..- - ().MAXIMUM . .. l-i,

> MINIMIUM-- .SAMPLE L'Iit

1 0. 2 C/w max.1I- [.I O I

+ + 444++4

,i C0 0 C) o 11)0 C) () ) 0 ) 0

, 1 1 2. .- - _ 4 4 4 5 5:3 ' ,,_ 4 -8, .-2 .'. 4 8 =' 6.

Fiq. 19 Post Shock and Vibration Thermal Resistance, Raic (°C/w

H I"'3 f:iFO .A I DATAI;16

LOWER CELL LIMIT,CELL WIDTH AND NUME:ER OF C-ELL-;-., .5 25VERT '7-C:AL.E: IC:-j4AR :I M A

-:HARAC.TERI*;TI --..riIIM AAVERAGE- 4.744S IGMA- -- . l 4-:720_7:MAXIMLiM- 4.7, .MINIMUM- 4.71.3.SAMFLE. -- 1(

0 10O+ LI

8+ Eo7+- D]

6+ n-41- DI7- 06* 0

1" El

I F .+..i., ,.i.,-4 4 . i.4 ,.i,,, , + +-4,-. ,m-4 ..4- , .4- .-4, + 4-+ 4-,4..+ . ..+."

. . .. . . ') 2 ::-: 4 l55 5 5 5 5 ......

I riq. 20 Statistical Distribution of Dimenmsion A35

................... I:-3i ......-. _..012I 45-

No. of Devices Construction

1 Webless Wicked1 Convoluted Tungsten Button1 Nonconvoluted Tungsten Button2 Ion-Implanted

Again all devices passed. The Thermal Resistancedata listed for 112 and 113 were measured after theShock and Vibration Tests.

D. General Data

Table 7 lists a statistical analysis of all the datameasured during this confirmatory test. Table 8 liststhe key for identifying the individual characteristics.Figs. 20, 21, 22, 23 and 24 show the distribution ofthe dimensions of the samples.

In addition to the tests discussed, 'wo nonconvoluteddevices with tungsten buttons were subjected to twocomplete thermal shock tests using method 1051.1 anda low temperature of -550 C instead of the specified-250C. This action results in doubling the number ofnonconvoluted tested doubling the number of cycles to10 instead of 5, and doubling the stress to -55°C in-stead of -250 C. Both devices passed with flying colors.

ReverseCurrent

SI/N (Ir ) Thermal Resistance (RgjC)

mA oC/W

J155 0.82 0.1 initial data0.1 0.15 after test

J158 0.87 0.09 initial data0.1 0.12 after test

V. TEST EQUIPMENT

Refer to the First through Sixth Monthly Reports for thiscontract for additional information concerninq test appara-tus. The electrical and environmental test equipment surveylisted in the Interim Report for the Engineering Sampltsrepeated and updated here for reference in Table 9.

36

Table 7

Statistical Analysis of Confirmatory Data

FRCIEIIDiC:T-.-.----CONF IMA'T'iRY .;IL. I C:N TRAN_-;C:ALENT RECT I F I ER DATA I

I: -ARAC TERI'E;TI: I AVU I -IcIIA I MAX I MIN I :HI--',;C!I N I

1 1 .. 221 . 1251 .9201 .101 21.201 1012 1 2.8571 1.721 6.1801 1. 4401 1Z'. :-:5 1 1)I.-: 1.1I141 .0471 .2001 .070 18: .89 10? i )41 .9881:: .02.51 1 . 000)( 1 .92:/:0 1 19/. 69-- 1 10) 1

5......001.5I 8'.2:-001 2.O000 4.711 101

6 .: .7121 .111) .8201 .5101 ED:. 1I7 1 .,:.31l .1701 .7201 .2- :-:. 41 i 10',.*', .5:.14 . 1021 .720 .4.6-.0 2'-. 26.1 101' . =.E:,. . 00: 1 I . 16)(D i 13. :-7 - I1 1 .4. . .4101 .4101 2.00 ).11 i .4101 1 .4101 .1101 2. 0(:)1 2112 .6101 .1@91 .7401 .4.01 9.711 51i ::' .,'91 .0771 .7,:01 .56 1,I 14.741 () I14 . I.: .0391 2001 .0901 1 .121 1011:I 1 I OSI, .1601 w1.001 4. 01 31I-,1 4.7441 .0141 4.7,61 I 4.7131 - _lo17 1 .4,31 .0091 3.47'.I ::.4471 2.-91 1011:-: 1 . 'D61' . 0081 .6501 .6~241 148 1011' 1.. ,041 .0121' 1. :41 1.7901 12.401I 10120 1 2.1021 .0021 2.1 061 2.1001 1 21 101

TUE'-;vDAY, OCTOE:ER 9, 1/79

37

1

Table 8

Key to Statistical Analysis of Table 7

Characteristic # Definition

1 Reverse Current (I r ) at +250C

2 Reverse Current (Ir) at +125 0C

3 Thermal Impedance RajC

4 Forward Voltage (VFM)

5 Reverse Recovery Tim (Trr)

6 Post Surge Test, Reverse Current (Ir)

7 Post Barmetric Test, Reverse Current (Ir)

R Post Blocking Voltage Life Test, Reverse Current (Ir )

9 Post Thermal Shock Test, Reverse Current (I r )

1IL Post Thermal Shock & Moisture Test, Reverse Current (Ir)

ii Post Salt Spray Test. Reverse Current (I r )

12 Post Shock & Vibration Test, Reverse Current (1r )

13 Post Thermal Fatigue Test, Reverse Current (Ir)

14 Post Environmental Test, Thermal Resistance (RajC )

15 Final Environmental Test, Thermal Resistance (RejC)

16 Dimension A

17 Dimension B

18 Dimension C

19 Dimension D

20 Dimension F

38

WON

4-)i

I3 1 4 -) 04 (CA T

) C) 4-)U C)

C4)(C~~

a)c7 -44 -

C) .- i OH~Th (Z:7,

U4 -0

C) U)4)' H (

124~' F - r*

--4 4J rd (C (C H

8) 'C)0043)

E-4H

Cl1 0 H H -

'-'~ H> 0 4

ON 0 - ) *H(C-H4 U) o v 4 -

-~ u

C))

4 1-I

C) C

C)C) C)

4) C)C-C:

CD) C: 4)) CDq>-q r

(12 39

.- 4

4-4 ~0 )

41i

8

>1

E-4E- c,

I-:

4-) w

C)

4J~O

N N

,40

HI STrAMjRAM DATA ; 17 ]

LOWER CELL LIMIT,CELL. WIDTH AND NUMEE OF CEL.L .5 .5 25

VURT .. ALL : 1C:HAR: DM L:

'jARACTE:R I'T I C-D I Mi E:AvI'ERAJE - D. 4-,,-11S I G M A - -. . . 0 OC ) ,- ',4 4 9 L ,.C ) 9 tO 1

MAX I MUM- 9. 47':.

M I N I MUM- :.447U SAMPLE:-. 1 )C.)

> 10+ [l9+ lJE:+ 0

C7+ 0

5+ 04+ EI

2+ Q1+ 0

+ -- + + -+--.4-4,-+4---+ .+. 4. -1-- 4" ""+ 44

4--. + t "

."

-" 1

-

1 2 A. 5. 7 0.9 1 1 1 1S. .0 12

5- 5* =0 C5 5 5 = 5

Fig. 21 Statistical Distribution of Dimension B

HI-TOGRAM DATA[; 1)

LOWER CELL LIMIT,CELL WIDTH AND NUMBER O-F CELLS; .45 . 5 5

VIZRT ':CALE: 1CIAR:rIM c

:HARAC TER I S;T I C:-DI M C:AVI:RA': E - f .S I c.MA .... C,0- -- :A 21 '9- --,4565

MAX I MUM- 0. L'.5M I N I MUM- () . 6,4SAMPLE:-. 10

rn

'+ 079+ El7+ 0

5+ 04+ El3+ E0

2+ El1+ CEI

++++++ ++ 4-+.+.++++++++++++

,) . .' .1 .) . . . . . . . .S5 : 7 :A: 0 1 :'.4 5

C- C- C 5 C -

Fig. 22 Statistical Distribution of Dimension C

41

H I ' [i-ORAM DIATA [ ; 1 '1

LOWER CELL LIMIT,iCE:LL WIDTH AND NUME:ER OF CELL.S, :.5 .3 25VERT ]':I:.ALE.: 1CH--AR:E IM Ei

CHARAC:TER I -;T I -i I M LAVIERAGE- 1 . ''042"S IGMA-- - U. Qi 1 '=..."-MAXIMUM- 1.3-:4

Q) MINIMUM- 1.7'-/.I> SAMPLE--. 10

8+ 00 7+ 0

6+ 05+ 04+ 03+ [02+ 00I + 00

() 1 1 2.: .=- : 4 4 . , 7 7

5 1 7 3- 9 =5 1 7 ::9 =5 1 7

Fiq. 23 Statistical Distribution of Dimenlsion D

1 I ;TI,-RAM DATA E ; 201

LOWER CELL LIMIT,CELL WIITH AND NUMBER OF' CELL'; :1 .5 .1 25VERT SC:ALE: 1CIHAR:DIM F

:HARAI::TER I1T I C-Eli M FAVIERAGE- 2. 1015S I OMA- -... 0.0(')206:-:27:94-1MAX I MiM- ' 1 06

.-M INIMUM- 21.. I

SAMPLE-- 1(')C)

> 10+ 089+ Oi

4.8+ 07+ [7+ El6+ I-5+ El4+ El:3+ 02+ 1i1 + El

+ 4-.4- - 4 -. - 4-- 4 4-. +-+ +.4--4 4 4 + .4..+44 + 4 -4-4

5 7 9 1 -5 7 * 1 : 7 "

Fig. 24 Statistical Distribution of Dimension F

42

A 'A ' t

,a . - . ' "'- ri ' e' . -'' , L , 'I-.,

ir,-n- t r- - h,: at . r ; , " ,- '-b .T C ' ,, i •

L0 1 1 4_ f_ .&Z C -' et 1-,L L Wi t U. T In-l£troc' d '- , the! SIx-rJ('- : ti't a E "' ' ,', ];"i,

''-Pn

2:' p [caf.)fn (,1 2 ,:' -tfl ; . ::-, -,.. 4 ' -., . . .

r13tifier jantiion to ift ,.e Cpre'v I :pjerature,

AFplic2,t:,,n or ,n.f 60 liz, positive, 1/ o-ri qh current surge to the DUT,

Ao,plicatinm of one 60 Hz, negative, I/2 cycl.reverse high voltage pulse to the DUT.

The above test sequence of operations ts re-peated at one minute intervals for 10 tot 1,lsurges.

'The iepetitive surge current test is shown in F 25The circuit block diagram is illustrated )n i 2 .Three. power supplies are also involved i- t1 - .-of DT's ability to withstand overloads. Sequjencingc.n -Ie exact half or full 60 Hz cycle is desianed!-T,1 the equipment. High voltage interlocks are

used for safety of the operating personnel.

An a. c ht t ing current ,ipply heats the DUT to l tsnormal (,perating temper iture befor(7 a second supply, .; a ,,nqle, half c,"i] forward current surge

'-, th' .' -' ,''n rhe '', -iue- t half cy'cle, an eCf',,,[t -, . : ; ' . .c. vo]ta e is applied to t-est

• 'he t ,,: '" ,'i , r'," h-u, retained its blo,,'k,*j) '-eo --' it. '' -'l5 r" This -large SCU' e 1

r,-' t9d rn lrms rt .rno minute inTtervals. k" ASK -. .. .- c tr pnr. " cs' 7p r' -'.

] v.'. - ,-',. ' , : -7 JT J t'er-e It t lzy, i!I-,t\': -d' }" '" . '¢ ros i . Forced air _7oo . .

43

Figure 25 Repetitivo, Surqo, CurrentTest Set. The DLJ was mountedinside the interlocked door onthe left in~ the photograph.

z- N

0. i

.........- i

B. Forward On-State Voltage Trst Set

In the forward on-state voltage test the peak forwardvoltage drop is measured while the rectifier is con-ducting its rated current. At the same time theoperation of the heat-pipes is confirmed.

The test set shown in Fig. 27 applies the fullrated average a.c. current to the DUT. The coolingair flow is adjusted to achieve the required 1000 Con the case of the heat-pipe of the DUT before thepeak forward voltage is read on the oscilloscope. Afunctional block diagram of the circuit is shown inFig. 28.

During this test the temperature is measured atseveral points along the heat-pipes. In this way,the heat-pipes' thermal balance and isothermal cha-racteristics can be verified. A poorly functioningheat-pipe is not isothermal. Properly functioningheat-pipes are important not only for the reliabilityof the DUT, but also because the on-state voltage isa function of the junction temperature.

C. Thermal Fatigue Test Set

Rectifiers are temperature cycled by operating themin a circuit in which the devices are heated by con-ducting their full rated current of 250 A average andcooled by blowing room temperature air across the finson the device. The test is conducted for a minimum of200 cycles. The test set is shown in Fiq. 29 alongwith the functional block diagram of the circuit inFig. 30. The air flow is adjustable to assure thatthe specified minimum and maximum (min. Tc = 30 + 100 C,max. Tc = 90 + 100 C) temperatures are achieved onevery cycle. A recorder connected to a thermocoupleattached to the rectifier is used to verify not onlythe temperature range, but also the number of cycles.

D. Blocking Current Test Set

The blocking current test set is used to measure theleakage currents of the reverse blocking junction.The test set along with the functional block diagramof the circuit are shown in Figs. 31 and 32, res-pectively. The reverse blockinq (leakage) currentsare measured at the full rated a.c. voltage of 800volts peak. These currents are measured at bothroom temperature (250 C) and at the maximum ratedtemperature (125 0 C) of the Device Under Test (DUT).

46

Figure 2 7 Forward On-StatL, I.cli 4Test Set. Thwo DL1T w~ mountedat the top of the coolino airduct in the center of thophotograph.

~-4 r-4

a%

-4

00

4-T ___ ___ ___

c!0

coj

rf)

4-)-

48

2- ~ JI

F'm -41 0~

6 6,

V) 'i. (

4.0

.3" 43

330

x>11I, I

I I , t

JilL VF> S~t i 0i 1 .

C-)

4-

'-43

C~ 4-,

Ci..

I-4

C~j Ci:

> O

L0,

52-

The measL:rtment is )eit _,ited by monitoring the voltagedrop .:cicss a calibrate& resistor in series with thePu. Ths -nables - oscilloscope to be used tomeasure the peak currenIt since the oscilloscope is avoltage rather than a current measuring device. Olin's lawconverts the reading to the current.

E. Blocking Voltage Lilf Test

Rectifiers are life tested for 200 hours by sub-jecting them to reverse blocking voltages of 800volts while at a temperature of 1250 C. A 60 Hz 1/2wave AC power supply is used for voltage power. Thetest set is shown in Fig. 33 and the functional blockdiagram is shown in Fig. 34.

Metering within the test set provides the temperatureof the DUT, elapsed time, voltage and current. Ajack is provided for the measurement of the peakvoltage with an oscilloscope. Indicator lamps andhigh voltage fuses are included in the power supplyto indicate whether a DUT has failed to block thehigh voltage during the tests. The test set is de-signed to test six devices simultaneously.

The power supply is connected through a voltace re-gulator to the primary power lines of the high tem-perature oven. In this way, the power and timina areremoved from the DUT in the event of a power inter-ruption that would reduce the oven temperature belowthe test value. An interlocked oven door olso removesthe high voltage from the DUT when the oven door isopened, thus, protectina the personnel.

This power supply is also used for the Reduced Baro-metric Pressure test for half wave voltaue iu ] cationto the DUT in the vacuum chamber.

F. Thermal Resistance Test Set

The thermal resistance test set is used t h t-rmnethe thermal resistance between the -unction o,->:znebase of the fins on the heat-pipe.

Prior to testing the rectifier, each device is coli-brated by recording the forward voltag (Vp. droiat 4.0 A as a function of temperature. At oocnselected temperature, sufficient time is taken toinsure that the junction, the heat-pipes and the ovev:are all in thermal equilibrium. At 4.0 A, VF etemperature is interpreted from measurements of theVF at temperatures between the selected temperaturcs.

53

F' 3 Blocking Voltaqe TA F o:i Lincluding the t-crpuraturc- cori iio Ven, i. This evon is al so iuo-(u1 1 orthe other, high temperatur(- t> rE.

r4

Q.L 1im.-. di

4-4

vi;

.&Hc

*0 0 I

4 --4-) ~C4UdE0

4 PA

aS I

0-

~135

It is this characteristic of VF ',ersus temperature at4.0 A which is employed to determine the junctiontemperature during the thermal resistance test. Thedifference between the junction temperature and thecase temperature, which is measured with a thermo-couple attached to the outside wall of the heat-pipe,divided by heating power is the thermal resistance.

When a rectifier is tested it is heated by pus- .yrated current through the device. This heating cur-rent is interrupted eery 50.0 ms for about 0.5 ms.During the interruption, the VF is measure" dat'hecalibration current of 4.0 A.

The test set is shown in Fig. 35. Fig. 36 is a

functional block diagram of the circuit.

The thermal resistance of the Transcalent rectifier

is a function of dissipation power and ambient tem-perature.

VI. CONCLUSION AND RECOMMENDATIONS

The confirmatory sample phase of the program has beensuccessfully completed on schedule as stipulated by theprogram evaluation chart (PERT). See Int. Tech. Rept. Jan. 1979.

No particular difficulties were involved in this phaseof the program, and we are ready to proceed with thepilot run program when permission is obtained. It issuggested that this approval be given as early as pos-sible so that this work can proceed on schedule.

We shall proceed with the preliminary pilot run reportas quickly as possible since we recommended that apilot run demonstration be given early in the pilotproduction run. This approach has the advantage ofmany parts and subassemblies being available to de-monstrate sequential operations in a short amount oftime.

All drawings and procedures will be updated to reflectthe final design for the pilot run, namely, standarddoped, webless wick and nonconvoluted cathode strain

isolation rings. The reasons for the final design haveIlready been discussed and verified in the body of this

r, or5t.

56

The DUT is mounted in the endof the cooling air duct shownin the foreground.II

.,:I

-C 0

11 0

IrI

flI

4)

I IIL

'4 4

58 (

VII. DISTRIBUTION LIST

The following pages include the distribution list sup-plied by the Contracting Officer with the DD 1423 for theInterim Technical Report. That list will be utilized alsofor the distribution of the next Interim and the FinalTechnical Reports.

59

Dr. Paul E. Greene Commanding OfficerDir. Solid State Lab. U.S. Army Research OfficeHewlett Packard Co. p.o. Box 122111501 Page Mill Road ATT N: Dr. Chas. BoghosianPalo Alto, CA 94304 Research Triangle Park, NC 27709

Mr. Gerald B. Herzoq Naval Research LaboratoryStaff Vice President ATTN: Dr. David F. Barbe,Technology Centers Code 5260RCA 4555 Overlook Avenue, SWDavid Sarnoff Res. Ctr. Washington, DC 20375Princeton, NJ 08540

Naval Electronics Lab Center.Dr. George E. Smith ATTN: Mr. Charles E. Holland, Jr.Bell Telephone Labs, Inc. Code 4300MOS Device Dept. 271 Catalina Blvd.600 Mountain Ave. San Diego, CA 92152Room 2A323Murray Hill, NJ 07974 The Johns Hopkins Univ.

Applied Physics LaboratoryCommander ATTN; Dr. Charles FeldmanU.S. Army Electronics Command 11100 Johns Hopkins RoadATTN: DRSEL-TL-I Laurel, MD 20810Mr. Robert A. GerholdFort Monmouth, NJ 07703 Commander

Naval Surface Weapons CenterCommander ATTN: Mr. Albert D. Krall,Harry Diamond Labs. Code WR-432800 Powder Mill Rd. White OakATTN: DRXDO-RCC, Silver Spring, MD 20910Mr. Anthony J. BabaAdelphi, MD 20783 Commander

RADCCommanding Officer ATTN: Mr. Joseph B. Brauer, RBRMPicatinny Arsenal Griffiss AFB, NY 13441

ATTN: SARPA-ND-D-A-4Mr. Arthur H. Hendrickson NASABldg. 95 Geo. C. Marshall Space Flight CenterDover, NJ 07801 ATTN: Dr. Alvis M. Holladay, Code EC-41

Marshall Space Flight Center, AL 35812Commanding GeneralU.S. Army Missile Command NASAATTN: Mr. Victor Ruwe, Langley Research Center

DRSMI-RGP Langley StationRedstone Arsenal, AL 35809 ATTN: Mr. Charles Husson, M/S 470

Hampton, VA 23665Commander

U.S. Army Electronics Command Dir. National Security AgencyATTN: DRSEL-TL-BS ATTN: Mr. John C. Davis, R55Mr. George W. Taylor Fort George C. Meade, MD 20755Fort Monmouth, NJ 07703

I61

...'. . ... 1Ii m. .. . _ _

Commander Mr. Danic BeckerU.S. Army Production Rckiabilify & Qual. Test CenterEquipment Agency vli:nes Spacecraft CenterATTN: AMXPE-MT louzstoi,, TX 77053

(Mr. C. E. McBurney)Rock Island, IL 61201 Texas Instruments, Inc.

Library M.S. 20Mr. Jack S. Kilby P.O. Box 50125924 Royal Lane Dallas, TX 75222Suite 150Dallas, TX 75230 Dr. S. Bakalar

Transitron Electronic Corp.Dr. Barry Dunbridge 168 Albion StreetTRW Systems Croup Wakefield, MA 01880One Space ParkRedondo Beach, CA 90278 Mr. R. Riel

Westinghouse Electric Corp.Mr. Harold D. Toombs R&D CenterTexas Instruments, Inc. Pittsburgh, PA 15235P.O. Box 5474; M/S 72Dallas, TX 75222 National Semi-Conductor Corp.

ATTN: Mr. R. BregarCommander, AFAL Danbury, CT 06810ATTN: AFAL/DEHMr. Stanley E. Wagner Solitron DevicesWriaht Patterson AFB, 256 Oak Tree RoadOH 45433 Tappan, NY 10983

Lincoln Laboratory, MIT Dr. L. SuelzleATTN: Dr. Donald J. Eckl Delta Electronics Corp.P.O. Box 73 2801 S. E. Main StreetLexington, MA 02173 Irvine, CA 92714

RADC (ETSD) Bell LaboratoriesATTN: Mr. Sven Roosild ATTN: Mr. W. H. HamiltonHanscom AFB, MA 01731 Whippany, NJ 07981

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South Windsor, CT 06074Silicon Transistor Corp.ATTN: Mr. P. Fitzgerald Martin MariettaKatrina Road ATTN: Mr. E. E. BuchananCh:lmsford, MA 01824 P.O. Box 179

Denver, CO 80201

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J. J . Henry Co., Inc. Special I'Proj . Du ,.nL;, LIectronics Supply Ctr.Attn: Mr. Mike Saboe - NSRDC Study Directorate of Engineering2341 Jefferson Davis Highway and StandardizationArlington, VA 22202 DESC-ECS (Mr. N. Hauck)

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Delco Electronics Garrett Air ResearchATTN: Dr. A. Barrett ATTN: Mr. Everett GeisMail Code 8106 2525 West 190 Street676 Hollister Avenue Torrance, CA 90509Goleta, CA 93017

Airesearch Manufacturing Co.NASA ATTN: Mr. John AshmoreJohnson Space Center Electronic SystemsATTN: Mr. E. Wood, Code EG2 2525 W. 190th StreetHouston, TX 77058 Torrance, CA 90509

. Gartfft Air *Research'Mfg." Co. - Naval Underwater Systems Center

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