850nm 10Gbs Multimode Dual Top Contact VCSEL Array …...Dual Top Contact Multimode VCSEL Array...

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CONTACT US [email protected] WEBSITE ii-vi.com Rev. 01 APA4301010002 APA4301040002 APA4301120002 850nm 10Gb/s Dual Top Contact Multimode VCSEL Array Features: 850nm multimode emission Low spectral width Low threshold and operation current High reliability High humidity robustness compliant with GR468 Low electrical parasitics Data rates from DC to 10 Gb/s Dual top contact configuration with common cathode electrodes Available as single chip, 4 and 12 channel array RoHS compliant Applications: Single channel and parallel fiber optical communication links at 10Gb/s up to 300m. Smart cables, HDMI Shipment packaging options: Diced wafer on UV tape on metal lead frame Grip ring Gel-Pak

Transcript of 850nm 10Gbs Multimode Dual Top Contact VCSEL Array …...Dual Top Contact Multimode VCSEL Array...

Page 1: 850nm 10Gbs Multimode Dual Top Contact VCSEL Array …...Dual Top Contact Multimode VCSEL Array Features: 850nm multimode emission Low spectral width Low threshold and operation current

CONTACT [email protected]

WEBSITEii-vi.com Rev. 01

APA4301010002APA4301040002APA4301120002

850nm 10Gb/s Dual Top Contact

Multimode VCSEL ArrayFeatures:

850nm multimode emission

Low spectral width

Low threshold and operation current

High reliability

High humidity robustness compliant with GR468

Low electrical parasitics

Data rates from DC to 10 Gb/s

Dual top contact configuration with common cathodeelectrodes

Available as single chip, 4 and 12 channel array

RoHS compliant

Applications:

Single channel and parallel fiber optical communicationlinks at 10Gb/s up to 300m.

Smart cables, HDMI

Shipment packaging options:

Diced wafer on UV tape on metal lead frame

Grip ring

Gel-Pak

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Wavelength tuning coefficient

Slope efficiency variation 25°C - 85°C

Thermal impedance

δλ/δT

∆ηT

Zth

-0.5

0.06

-0.3

3.0

-0.1

nm/K

%/K

K/mW

RatingsMin Typ Max

Parameter Symbol Unit

Thermal Characteristics

850nm 10Gb/s Multimode Dual Top Contact VCSEL Array

Threshold current

Slope efficiency

Optical output power

Operating voltage

Differential resistance

Emission wavelength

Spectral width, RMS

Modulation bandwidth

Rise time

Fall time

Capacitance

Beam divergence

Relative Intensity Noise

Threshold uniformity

Slope efficiency uniformity

mA

mW/mA

mW

V

Ω

nm

nm

GHz

ps

ps

pF

°

dB/Hz

mA

mW/mA

0.34

1.4

45

840

9

0.8

0.43

1.8

1.9

60

850

30

40

0.2

24

1.1

0.52

2.2

2.1

75

860

0.4

35

45

0.3

30

-128

0.15

0.05

RatingsMin Typ Max

I=4mA

Iop=5mA

Iop=5mA

Iop=5mA

Iop=5mA, T=-10°C - 85°C

Iop=5mA, T=-10°C - 85°C

Iop=5mA

Iop=5mA, ER=5dB, 20% - 80%

Iop=5mA, ER=5dB, 20% - 80%

Iop=5mA

Iop=5mA, Full width 1/e2

Iop = 5mA, ER=5dB, 7.7GHz bandwidth

Range across 1x4 and

1x12 array chips

Electro-Optical Characteristics

T=25°C unless otherwise noted

Parameter Symbol UnitConditions

Ith

η

Pout

Uop

Rd

λ

∆λ

f3dB

tr

tf

C

Θ

RIN(OMA)

∆Ith

∆η

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Optical output power

Peak forward current (max. 10sec)

VCSEL reverse voltage

Operating temperature

Storage temperature

Mounting temperature (max. 10sec)

8

12

5

-10 to +85

-40 to +100

260

mW

mA

V

°C

°C

°C

Parameter Rating Unit

Die length, APA4301010002, APA4301010102, APA4301010202

Die length, APA4301040002, APA4301040102, APA4301040202

Die length, APA4301120002, APA4301120102, APA4301120202

Die width

Die height

210

960

2960

260

135

230

980

2980

280

150

250

1000

3000

300

165

µm

µm

µm

µm

µm

Parameter Min Typ Max Unit

Absolute Maximum Ratings

Chip Outer Dimensions

Chip Layout

N: n-contact (common cathode) P: p-contact (anode)M: mechanical pad

850nm 10Gb/s Multimode Dual Top Contact VCSEL Array

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RoHS Compliance

II-VI is fully committed to environment protection and sustainable development and has set in place a comprehensive program for removing polluting and hazardous substances from all of its products. The relevant evidence of RoHS compli-ance is held as part of our controlled documentation for each of our compliant products. RoHS compliance parts are available to order, please refer to the ordering information section for further details.

Ordering InformationProduct Code Data Rate Description Shipment Packaging

APA4301010002 10Gb/s 850nm 10G MM DTC VCSEL chip Diced wafer on metal lead frame (1)

APA4301040002 10Gb/s 850nm 10G MM 1x4 DTC VCSEL array Diced wafer on metal lead frame (1)

APA4301120002 10Gb/s 850nm 10G MM 1x12 DTC VCSEL array Diced wafer on metal lead frame (1)

APA4301010102 10Gb/s 850nm 10G MM DTC VCSEL chip Grip ring (2)

APA4301040102 10Gb/s 850nm 10G MM 1x4 DTC VCSEL array Grip ring (2)

APA4301120102 10Gb/s 850nm 10G MM 1x12 DTC VCSEL array Grip ring (2)

APA4301010202 10Gb/s 850nm 10G MM DTC VCSEL chip Gel-Pak (3)

APA4301040202 10Gb/s 850nm 10G MM 1x4 DTC VCSEL array Gel-Pak (3)

APA4301120202 10Gb/s 850nm 10G MM 1x12 DTC VCSEL array Gel-Pak (3)

(1) Full diced 3’’ wafer on UV tape on metal lead frame Ø 230mm, electronic wafermap provided (standard high volume)(2) Known Good Dies on UV tape on grip ring Ø 150mm (medium volume)(3) Known Good Dies in 2’’ Gel-Pak (low volume)

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by II-VI before they become applicable to any particular order or contract. In accordance with the II-VI policy of continuous improvement specifications may change without notice. Further details are available from any II-VI sales representative.

Safety Labels

850nm 10Gb/s Multimode Dual Top Contact VCSEL Array

©II-VI 2019. II-VI the II-VI, Inc. logo, and all other II-VI, Inc product names and slogans are trademarks or registered trademarks of II-VI, Inc. in the U.S.A. or other countries. Information in this datasheet is subject to change without notice.

DANGERINVISIBLE LASER RADIATION – AVOID DIRECT EXPOSURE TO BEAM

THIS PRODUCT COMPLIES WITH 21CFR 1040.10

MAX POWER 8.0 mW WAVELENGTH 850 nm CLASS IIIb LASER PRODUCT

REFERENCE IEC 60825-1 Edition 2.0

INVISIBLE LASER RADIATION AVOID EXPOSURE TO BEAM CLASS 3B LASER PRODUCT

Max Power 8.0 mW Wavelength 850 nm

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