830 nm Broad Area Laser Diode, 1 W · 2018. 1. 9. · February 21, 2013 QTN004367-S01, Rev A...
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February 21, 2013 QTN004367-S01, Rev A Description The LD830-MA1W 830nm Broad Area (multi-lateral mode) Laser Diode is based on quantum well epitaxial layer growth and a highly reliable waveguide structure. This diode features high optical output power and slope efficiency. The LD830-MA1W (Ø9 mm), a TO-can package discrete laser diode with integrated power monitor photo-diode, is a compact light source suited to many applications. TO-can packaged lasers are fully compatible with Thorlabs’ entire line of Laser Diode and TEC Controllers as well as our Thorlabs’ Laser Diode Mounts and Collimation Solutions. Specifications T CHIP = 25 °C LD830-MA1W Symbol Min Typical Max Center Wavelength λ C 820 nm 830 nm 840 nm Spectral Bandwidth (RMS) Δλ - 1 nm 3 nm Output Power CW @ I CW P CW 1000 mW - - Operating Current CW I CW - 1330 mA 1450 mA Threshold Current I TH - 330 mA 400 mA Forward Voltage V F - 2.1 V 2.5 V Slope Efficiency ΔP/ΔI - 1 W/A - Photodiode Current @ P OP - - 0.8 mA - Transverse Beam Divergence Angle (FWHM) θ T - 24° 30° Lateral Beam Divergence Angle (FWHM) θ L - 7° 15° LD830-MA1W LD Reverse Voltage (Max) 2 V PD Reverse Voltage (Max) 30 V Absolute Max Current 1500 mA Absolute Max Power 1100 mW Operating Temperature -20 to 50 °C Storage Temperature -20 to 80 °C Pin Code A 830 nm Broad Area Laser Diode, 1 W LD830-MA1W
Transcript of 830 nm Broad Area Laser Diode, 1 W · 2018. 1. 9. · February 21, 2013 QTN004367-S01, Rev A...
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February 21, 2013
QTN004367-S01, Rev A
Description
The LD830-MA1W 830nm Broad Area (multi-lateral mode) Laser Diode is based on quantum well epitaxial layer growth and a highly reliable waveguide structure. This diode features high optical output power and slope efficiency. The LD830-MA1W (Ø9 mm), a TO-can package discrete laser diode with integrated power monitor photo-diode, is a compact light source suited to many applications. TO-can packaged lasers are fully compatible with Thorlabs’ entire line of Laser Diode and TEC Controllers as well as our Thorlabs’ Laser Diode Mounts and Collimation Solutions.
Specifications
TCHIP = 25 °C
LD830-MA1W
Symbol Min Typical Max
Center Wavelength λC 820 nm 830 nm 840 nm
Spectral Bandwidth (RMS) Δλ - 1 nm 3 nm
Output Power CW @ ICW PCW 1000 mW - -
Operating Current CW ICW - 1330 mA 1450 mA
Threshold Current ITH - 330 mA 400 mA
Forward Voltage VF - 2.1 V 2.5 V
Slope Efficiency ΔP/ΔI - 1 W/A -
Photodiode Current @ POP - - 0.8 mA -
Transverse Beam Divergence Angle
(FWHM) θT - 24° 30°
Lateral Beam Divergence Angle
(FWHM) θL - 7° 15°
LD830-MA1W
LD Reverse Voltage (Max) 2 V
PD Reverse Voltage (Max) 30 V
Absolute Max Current 1500 mA
Absolute Max Power 1100 mW
Operating Temperature -20 to 50 °C
Storage Temperature -20 to 80 °C
Pin Code A
830 nm Broad Area
Laser Diode, 1 W
LD830-MA1W
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February 21, 2013
QTN004367-S01, Rev A
Typical Performance Plots
Drawing
Ø6.42 mm(0.253")
A A
B
B
2Case
1 3
Pin Code A
Pin Code A
Bottom View
LDPD
2
1 3
1.5 mm(0.059")
Chip Emmision isCentered onTO Canto Typ.±0.100 mm
0.35 mm(0.014")
1.00 mm(0.039")
3X Ø0.45 mm(0.018")
Ø9.0 mm(0.354")
2.65 mm(0.104")
Optical Distance
Ø2.20 mm(0.087")
9.0 mm(0.354")
3.55 mm(0.140")
2.54 mm(0.100")
0 200 400 600 800 1000 1200 14000
200
400
600
800
1000
1200
Power Forward Voltage
Current (mA)
Power
(mW
)
LD830-MA1W LIV
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Forward Voltage (V
)
820 825 830 835 840-0.2
0.0
0.2
0.4
0.6
0.8
1.0
Wavelength (nm)
Am
plitu
de (A
.U.)
LD830-MA1W Optical Spectrum @ 1W
