7MBR25SA120-50-Fuji

7MBR25SA120 IGBT Modules

Applications· Inverter for motor drive· AC and DC servo drive amplifier· Uninterruptible power supply

Maximum ratings and characteristicsAbsolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rating UnitCollector-Emitter voltageGate-Emitter voltage

Collector current

Collector power dissipationCollector-Emitter voltageGate-Emitter voltageCollector current

Collector power dissipationRepetitive peak reverse voltageRepetitive peak reverse voltageAverage output currentSurge current (Non-Repetitive)I2t (Non-Repetitive)Co

nver

ter

B

rake

In

verte

r

Operating junction temperatureStorage temperatureIsolation between terminal and copper base *2voltage between thermistor and others *3Mounting screw torque

VCES

VGES

IC

ICP

-ICPC

VCES

VGES

IC

ICP

PC

VRRM

VRRM

IOIFSM

I2 tTj

Tstg

Viso

Continuous Tc=25°C Tc=80°C1ms Tc=25°C Tc=80°C

1 device

Continuous Tc=25°C Tc=80°C1ms Tc=25°C Tc=80°C1 device

50Hz/60Hz sine waveTj=150°C, 10mshalf sine wave

AC : 1 minute

1200 ±20 35 25 70 50 25 180 1200 ±20 25 15 50 30 110 1200 1600 25 260 338 +150-40 to +125 AC 2500 AC 2500 3.5 *1

VVA

A

AWVVA

A

WVVAAA2s°C°CV

N·m

*1 Recommendable value : 2.5 to 3.5 N·m (M5)*2 All terminals should be connected together when isolation test will be done.*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.

IGBT MODULE (S series)1200V / 25A / PIM

Features· Low VCE(sat)· Compact package· P.C. board mount· Converter diode bridge, Dynamic brake circuit

Electrical characteristics (Tj=25°C unless otherwise specified)Item Symbol Condition Characteristics Unit Min. Typ. Max.

Zero gate voltage collector currentGate-Emitter leakage currentGate-Emitter threshold voltageCollector-Emitter saturation voltage

Input capacitanceTurn-on time

Turn-off

Forward on voltage

Reverse recovery time of FRDZero gate voltage collector currentGate-Emitter leakage currentCollector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse currentForward on voltage

Reverse currentResistance

B valueTher

mis

tor

Con

verte

r

Bra

ke

In

verte

r

ICES

IGES

VGE(th)

VCE(sat)

Cies

ton

trtr(i)toff

tfVF

trrICES

IGES

VCE(sat)

ton

trtoff

tfIRRM

VFM

IRRM

R

B

VCE=1200V, VGE=0VVCE=0V, VGE=±20VVCE=20V, IC=25mAVGE=15V, Ic=25A chip terminalVGE=0V, VCE=10V, f=1MHzVCC=600VIC=25AVGE=±15VRG=51Ω

IF=25A chip terminalIF=25AVCES=1200V, VGE=0VVCE=0V, VGE=±20VIC=15A, VGE=15V chip terminalVCC=600VIC=15AVGE=±15VRG=82ΩVR=1200VIF=25A chip terminalVR=1600VT=25°CT=100°CT=25/50°C

1.00.28.5

2.6

1.20.6

1.00.3

3.20.351.00.2

2.61.20.61.00.31.0

1.51.0

3000

5.5 7.2

mAµAVV

pFµs

V

µsmAµAV

µs

mAV

mAΩ

K

Item Symbol Condition Characteristics Unit Min. Typ. Max.

Inverter IGBTInverter FWDBrake IGBTConverter DiodeWith thermal compound

0.69 1.30 1.14 °C/W 0.900.05

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal resistance Characteristics

IGBT Modules 7MBR25SA120

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

2.12.2

0.350.250.10.450.082.32.4

2.12.20.350.250.450.08

1.11.2

5000 465 495 5203305 3375 3450

[Converter]21(P)

23(N)

1(R) 2(S) 3(T)

[B ra ke ] [In ver ter ]2 2 (P 1)

7 (B )

1 4 (G b)

2 4 (N 1)

2 0 (G u)

1 9 (E u )

1 3 (G x)

1 8 (G v)

1 7 (E v )

4 (U )

1 2 (G y)

5 (V ) 6 (W )

1 6 (G w )

1 1 (G z)1 0 (E n)

1 5 (E w )

8 9

[T h e rm is to r]

IGBT Modules 7MBR25SA120Characteristics (Representative)

0 1 2 3 4 50

10

20

30

40

50

60

8V

10V

12V15V

VGE= 20V

[ Inverter ]Collector current vs. Collector-Emitter voltage

Tj= 25 oC (typ.)

Col

lect

or c

urre

nt :

Ic

[ A

]

Collector - Emitter voltage : VCE [ V ]

0 1 2 3 4 50

10

20

30

40

50

60

8V

10V

12V15V

VGE= 20V


Tj= 125 oC (typ.)

Collector - Emitter voltage : VCE [ V ]C

olle

ctor

cur

rent

: I

c [

A ]

0 1 2 3 4 50

10

20

30

40

50

60

Tj= 25oC Tj= 125 oC


VGE=15V (typ.)


Col

lect

or c

urre

nt :

Ic

[ A

]

5 10 15 20 250

2

4

6

8

10

Ic= 12.5A

Ic= 25A

Ic= 50A

[ Inverter ]Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25 oC (typ.)

Col

lect

or -

Emitt

er v

olta

ge :

VC

E [

V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35100

1000

10000

[ Inverter ]Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25 oC

Cap

acita

nce

: C

ies,

Coe

s, C

res

[ pF

]


Coes

Cres

Cies

0 50 100 150 200 2500

200

400

600

800

1000

[ Inverter ]Dynamic Gate charge (typ.)Vcc=600V, Ic=25A, Tj= 25 oC

Gate charge : Qg [ nC ]

Col

lect

or -

Emitt

er v

olta

ge :

VC

E [

V ]

0

5

10

15

20

25

Gat

e - E

mitt

er v

olta

ge :

VG

E [

V ]


Vcc=600V, VGE=±15V, Rg=51Ω, Tj=25°C Vcc=600V, VGE=±15V, Rg=51Ω, Tj=125°C

Vcc=600V, Ic=25A, VGE=±15V, Tj=25°C Vcc=600V, VGE=±15V, Rg=51Ω

Vcc=600V, Ic=25A, VGE=±15V, Tj=125°C +VGE=15V, -VGE<15V, Rg>51Ω, Tj<125°C= = =

0 10 20 30 4050

100

500

1000

ton

tr

toff

tf

[ Inverter ]Switching time vs. Collector current (typ.)

Switc

hing

tim

e :

ton,

tr, t

off,

tf [

nsec

]

Collector current : Ic [ A ]

0 10 20 30 4050

100

500

1000

tf

tr

ton

toff

[ Inverter ]Switching time vs. Collector current (typ.)

Collector current : Ic [ A ]Sw

itchi

ng ti

me

: to

n, tr

, tof

f, tf

[ ns

ec ]

10 50 100 50050

100

500

1000

5000

toff

ton

tr

tf

[ Inverter ]Switching time vs. Gate resistance (typ.)

Gate resistance : Rg [ Ω ]

Switc

hing

tim

e :

ton,

tr, t

off,

tf [

nsec

]

0 10 20 30 40 500

1

2

3

4

5

6

7

Err(25 oC)

Eoff(25 oC)

Eon(25 oC)

Err(125 oC)

Eoff(125 oC)

Eon(125 oC)

[ Inverter ]Switching loss vs. Collector current (typ.)

Switc

hing

loss

: E

on, E

off,

Err

[ mJ/

puls

e ]

Collector current : Ic [ A ]

10 50 100 5000

5

10

15

20

[ Inverter ]Switching loss vs. Gate resistance (typ.)

Switc

hing

loss

: E

on, E

off,

Err

[ mJ/

puls

e ]

Gate resistance : Rg [ Ω ]

Eon

Err

Eoff

0 200 400 600 800 1000 1200 14000

10

20

30

40

50

60

[ Inverter ] Reverse bias safe operating area


Col

lect

or c

urre

nt :

Ic [

A ]


0 1 2 3 40

10

20

30

40

50

60

Tj=25 oCTj=125 oC

[ Inverter ]Forward current vs. Forward on voltage (typ.)

Forw

ard

curre

nt :

IF

[ A

]

Forward on voltage : VF [ V ]

0 10 20 30 4010

100

300

Irr(125 oC)

Irr(25 oC)

trr(25 oC)

trr(125 oC)

[ Inverter ]Reverse recovery characteristics (typ.)

Vcc=600V, VGE=±15V, Rg=51 Ω

Forward current : IF [ A ]R

ever

se re

cove

ry c

urre

nt :

Irr

[ A

]R

ever

se re

cove

ry ti

me

: tr

r [ n

sec

]

0.0 0.4 0.8 1.2 1.6 2.00

10

20

30

40

50

60

Tj= 25 oC Tj= 125 oC

[ Converter ]Forward current vs. Forward on voltage (typ.)

Forward on voltage : VFM [ V ]

Forw

ard

curre

nt :

IF

[ A

]

0.001 0.01 0.1 10.01

0.1

1

5

IGBT[Brake]

Transient thermal resistance

Ther

mal

resi

stan

se :

Rth

(j-c)

[ o C

/W ]

Pulse width : Pw [ sec ]

FWD[Inverter]

Conv. Diode

IGBT[Inverter]

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.1

1

10

100

200

[ Thermistor ]Temperature characteristic (typ.)

Temperature [ oC ]

Res

ista

nce

: R

[ k

Ω ]


0 1 2 3 4 50

5

10

15

20

25

30

35

8V

10V

12V15V

VGE= 20V

[ Brake ]Collector current vs. Collector-Emitter voltage

Tj= 25 oC (typ.)

Col

lect

or c

urre

nt :

Ic

[ A

]


0 1 2 3 4 50

5

10

15

20

25

30

35

8V

10V

12V15VVGE= 20V


Tj= 125 oC (typ.)


Col

lect

or c

urre

nt :

Ic

[ A

]

0 1 2 3 4 50

5

10

15

20

25

30

35

Tj= 25 oC Tj= 125 oC


VGE=15V (typ.)


Col

lect

or c

urre

nt :

Ic

[ A

]

5 10 15 20 250

2

4

6

8

10

Ic= 7.5A

Ic= 15A

Ic= 30A

[ Brake ]Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25 oC (typ.)

Col

lect

or -

Emitt

er v

olta

ge :

VC

E [

V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 3550

100

1000

5000

[ Brake ]Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25 oC

Cap

acita

nce

: C

ies,

Coe

s, C

res

[ pF

]


Coes

Cres

Cies

0 50 100 1500

200

400

600

800

1000

[ Brake ]Dynamic Gate charge (typ.)Vcc=600V, Ic=15A, Tj= 25 oC

Gate charge : Qg [ nC ]

Col

lect

or -

Emitt

er v

olta

ge :

VC

E [

V ]

0

5

10

15

20

25

Gat

e - E

mitt

er v

olta

ge :

VG

E [

V ]


Outline Drawings, mm

7MBR25SA120-50-Fuji

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