6 th September 2012
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Transcript of 6 th September 2012
Design and characterisation of a Highly Miniaturised Radiation Monitor
(HMRM)
N. Guerrini1, R. Turchetta1, D. Griffin1, T. Morse1, A. Marshall1, O. Poyntz-Wright1, S. Woodward1, E. Daly2, A. Menicucci2, H. Araujo3, E. Mitchell3
1.STFC - Rutherford Appleton Laboratory, UK
2.ESA - Noordwijk, The Netherlands3.Imperial College London, UK
International Workshop on Semiconductors Pixel Detectors for Particles and Imaging
PIXEL 2012 – Inawashiro, Japan6th September 2012
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• Introduction
• Application and scope
• Radiation monitor architecture
• ASIC design and characteristics
• First results
• What’s next
• Conclusions
OUTLINE
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INTRODUCTION
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Data on the ionising radiation environment are very important to ensure an efficient design and operation of spacecrafts. Monitors currently in use weight more than 2Kg, require several Watts of power, are quite large (>10cm in each dimension)
STFC and IC (within the framework of a ESA technology development contract) aim to develop a “chip sized” (that is smaller, lighter and less power hungry) prototype radiation monitor suitable for application in:• Coarse radiation housekeeping• Save and alerting function• Support to platform and payload systems
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INTRODUCTION
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Radiation Monitor requirements:
• Minimum number of external components
• Dosimeter function
• Particle Rate Meter function
• Particle Species Identification function
• In-flight calibration procedure
• Power dissipation < 200mW
• Weight <20 g
• Radiation TID tolerance of at least 100kRad
• Latch up free
• Operating temperature range from -40 to +80°C
Monitor based on Active Pixel SensorsLow cost (CMOS process)Low complexity (functionalities on integrated circuit )
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Low energyparticle
High energyParticle (MIP)
High energyParticle (MIP)
Low energyparticle
• When the energy deposited in the detector by a low energy
particle is the similar to the energy deposited by a MIP
Ambiguity
• With APS sensors and judicious selection of silicon substrate
thickness we can think to sample the dE/dx curve and uniquely
identify the particle species and energy.
APPLICATION
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1. Conceptual design: APS telescope with low threshold for e/p discrimination– Parameters: number of sensors and shields, aperture size– Variables: energy thresholds, sensitive area, particle ranges
2. Optimisation with preliminary simulation geometry of particle telescope– Parameters: dimensions/materials for wafers, shields, casing, window, algorithms– Variables: thresholds, effective area, efficiency and purity for PID
3. Validation with full simulation geometry in 5 reference orbits– Parameters: algorithm tables (on-board and ground segment)– Variables: ID purity, pile-up probabilities, dosimetry functions, spectral reconstruction
G4HMRM v1.0CADd[1] d[2] d[3] d[4]S1 S2 S3 S4
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APPLICATION
protons
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APPLICATION
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SIMULATED PERFORMANCE SUMMARY
Electron range: 0.063 to 6 MeV
Proton range: 1.3 to 500 MeV
Maximum omni/d flux: 1x108 cm-2s-1
Dosimetry
Count rate on front sensor
Dose rate on all sensors
Also cumulative lifetime doses
On-board alerting functions
3 programmable particle ‘channels’
Offline spectral reconstruction
Electron/proton energy spectra
electrons
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ARCHITECTURE
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Three main mechanical elements of the HMRM chassisLID: Provides the prescribed geometry for detector telescope. Mounts the window (for visible blindness)BODY: Main structural housing around electronicsBASE: structural interface to spacecraft
Fabricated in Titanium - Mass 52g (including fasteners and connector)
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Flex rigid PCB designFour rigid boards
Interface PCBInterface connector PCBFPGA PCBDetector PCB
ARCHITECTURE
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ASIC DESIGN
• 0.18 µm CMOS Image Sensor technology
• 20 µm 4T-pixels in a 50 x 51 array
• Snapshot and correlated double sampling
(CDS)
• Frame rate up to 10,000 fps
• Column-parallel 3-bit single-ramp ADC, with
in-column trimming
• Digital readout, plus analogue readout for
debugging
• Integrated DAC for voltage/current
generation
• Band gap
• Temperature sensor
CMOS sensor for a Highly Miniaturised Radiation Monitor (HMRM).
Main specifications.
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ASIC DESIGN
• Simplest active pixel • Higher noise• Well proven, high radiation
tolerance
• Most popular active pixel• Low noise• Good radiation tolerance
The radiation tolerance requirements for HMRM are well within the 4T pixel measured range.
3T vs 4T
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ASIC DESIGN
Landau distribution(from beam test results)
S/N =118
Noise (in e-, before board noise correction)
Noise histogram(measured with
Photon Transfer Curve)
Most probable noise: 3.6e-
Average noise: 4.5e-
Conversion gain at output: 65.0μV/e-
Linear full well capacity: 17,900e-
CMOS 0.18 µm – 4T sensor
12 µm epi thickness with 1kW cm resistivity
15 µm pixel
FORTIS
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ASIC DESIGNRadiation Hardness
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ASIC DESIGN
• 60 sensors manufactured on 12 µm, low resistivity epitaxial substrates
• 60 sensors manufactured on 12 µm, high resistivity (>1kOhm cm) epitaxial substrates
• Design for radiation tolerance: Total dose Single event upset immunity
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ASIC DESIGN
The sample values from the pixels and the reset values are readout in snapshot mode and stored onto sampling capacitances at the top and at the bottom of the array.
The sampling control logic allows to sample and reset the pixels independently, hence controlling the pixel shuttering.
Row1 Readout
Pixel Sampling
Frame Time = 102us
2us
100us
Row2 Readout
Row24 Readout
Row25 Readout
RowN Readout
4us
RST
TX
RST
TX
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ASIC DESIGN
• One comparator per column (readout on both sides)
• Seven 7-bit programmable thresholds
• One 8-bit DAC for each comparator trimming adjusting
The ADC ramp is generated from the 7 programmable thresholds.
The comparator output is sampled 7 times (for each ramp level). The result is then converted into a 3 bits value.
In this way the output data will tell us between which thresholds the pixel value is.
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ASIC DESIGN
• 3-bit encoder per comparator
• Data read on a 9 bit bus 2*17=34 clock cycles for readout
• plus one clock cycles for temperature sensor data (9-bit)
• Test input to the entire shift register
• Triple majority voting (TMV) system for single event upset immunity.
• TMV used for programming and readout shift registers, except in shift register controlling the analogue readout.
• Enclosed geometry layout for total dose tolerance (entire chip).
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RESULTS
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Photon Transfer Curve method, measured through analogue test output:• Gain = 59.9 µV /e- (exp.
51.2)• Noise = 16.8 e-rms (exp.
13.5)• Cin = 2.1 fF (exp 2.3)• Full well = 14,600 e-• Full well (lin) = 6600 e-
Expected performance on data path:• Gain = 40.3 µV /e-• Noise = 13.9 e- rms• S/N (m.i.p.) = 69
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FUTURE WORK
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• Complete digital characterisation with light
• Test of 2nd iteration (end of September)
• Tests under irradiation (2nd iteration)
• Temperature tests (2nd iteration)
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CONCLUSIONS
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• CMOS image sensors provide new solutions to radiation detection
• High radiation tolerance
• Highly Miniaturised Radiation Monitor (HMRM) based around a
CMOS image sensor now in development
• Measured noise = 16.8 e- rms
S/N (m.i.p.) = 69
• HMRM instrument about to be tested
with sources
• 2nd iteration on (end of September) its way with reduced
power consumption and improved cross-talk and reliability.
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Thanks!!!http://dsc.stfc.ac.uk/Default.aspx