6 EMC Simulations of PE Systems - COTTET
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Transcript of 6 EMC Simulations of PE Systems - COTTET
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ABB GroupJune 2, 2010 | Slide 1
Didier Cottet, Stanislav Skibin, Ivica StevanovicABB Switzerland Ltd., Corporate Research, 28. May 2010
EMC Simulations of Power
Electronic Devices and Systems
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ABB GroupJune 2, 2010 | Slide 2
Outline
! Introduction! Numerical Method! Device Simulations! System Simulations!
Conclusion
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ABB GroupJune 2, 2010 | Slide 4
IntroductionPE in Power Supply & Distribution
Solar inverters
Photovoltaic
Static excitation systems
Power
stations
SVC Light withenergy storage
Grid stabilization
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ABB GroupJune 2, 2010 | Slide 5
IntroductionPE in Power Supply & Distribution
AC drives for pumpsHVDC for shoreconnection
Oil platforms
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ABB GroupJune 2, 2010 | Slide 6
IntroductionPE in Power Supply & Distribution
Generator frequencyconverter
HVDC for shoreconnection
StatComs for grid code
Wind parks
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ABB GroupJune 2, 2010 | Slide 7
IntroductionEMC / EMI in Power Electronics
! EMC (compatibility)! Standards compliancy! Switching harmonics / THD
(up to 25th / 40th harmonic)
! Conducted emissions(150 kHz 30 MHz)
! Radiated emissions(30 MHz 1 GHz)
! EMI (interferences)! Malfunction through self disturbance! Performance de-rating
! through load imbalance! through voltage/currents overshoots
! Low ruggedness in short circuit mode! Electric stress through ringing and oscillations
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ABB GroupJune 2, 2010 | Slide 8
Outline
! Introduction! Numerical Method! Device Simulations! System Simulations!
Conclusion
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ABB GroupJune 2, 2010 | Slide 9
MethodologyPEEC Partial Element Equivalent Circuits
1) 3D geometry descriptionand materials definition
2) Geometry subdivision" Nodes
3) Surface mesh" Node capacitances, C to GND
to other nodes
4) Volume mesh" Node-to-node
resistances, Rself inductances, L
" Mutual inductances, M
5) RLCM-circuit description
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ABB GroupJune 2, 2010 | Slide 10
MethodologyModeling Procedures
! 3D Broadband Solution! Time and frequency
domain
! Current and potentialdistributions
! E-/H-fields! Linear elements only! Slow
! 0D Narrowband Solution! Valid around frequencyfextr! Time and frequency
domain
! Nonlinear elements! No current/potential
distributions
! No E-/H-fields! FastSPICE, Simplorer,
Order reduced Z-matrixfor defined frequencyfextr
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ABB GroupJune 2, 2010 | Slide 11
Outline
! Introduction! Numerical Method! Device Simulations! System Simulations!
Conclusion
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ABB GroupJune 2, 2010 | Slide 12
Simulated DeviceIGBT Power Modules
! Example: HiPak IGBT power module! Rating: 6.5 kV, 2.4 kA! 24 parallel IGBTs! 12 anti-parallel diodes
! EMI related design issues! Dynamic / static current distribution! Short circuit capabilities! EM noise emission! CM coupling through base plate
! Dominant effect! Local disturbances in
IGBT gate voltages, UGE
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ABB GroupJune 2, 2010 | Slide 13
ModelingPackage Macro Modeling
! 3D PEEC model! Substrates! Bond wires! Power terminals! Auxiliary terminals
! Extraction of SPICEcompatible Z-matrix(0D narrowband solution)
**********************************************
*** subcircuit for hipak_package v1.0**********************************************
.subckt hipak_package_v1 1 2 3 4 5 6 7 8 9 10
1112 13 14 15 16 17 18 19 20 21 22 23 24 25 26
2728 29 30 31 32 33 34 35 36 37 38
LZ_0 1 i_node0_2 2.25402e-008LZ_1 3 i_node1_2 1.44454e-008
LZ_2 5 i_node2_2 9.15187e-009
LZ_3 7 i_node3_2 2.30544e-008LZ_4 9 i_node4_2 1.48664e-008
.
.
.
KZ_1_0 LZ_1 LZ_0 0.888218KZ_2_0 LZ_2 LZ_0 0.662318
KZ_2_1 LZ_2 LZ_1 0.812005KZ_3_0 LZ_3 LZ_0 0.0200939
KZ_3_1 LZ_3 LZ_1 -0.0428358
.
.
.RZ_0_0 i_node0_2 i_node0_3 0.000948648
HZ_0_1 i_node0_3 i_node0_4 Vam_1 0.000703874
HZ_0_2 i_node0_4 i_node0_5 Vam_2 0.000529978HZ_0_3 i_node0_5 i_node0_6 Vam_3 4.56201e-005
HZ_0_4 i_node0_6 i_node0_7 Vam_4 4.65392e-005
HZ_0_5 i_node0_7 i_node0_8 Vam_5 4.79563e-005.
.
.
Vam_18 i_node18_21 38 dc=0v
.ends
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ABB GroupJune 2, 2010 | Slide 14
ModelingCircuit Model
Package
Z-matrix
Gate signal
Load
IGBTs &
diodes
IGBTs &
diodes
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ABB GroupJune 2, 2010 | Slide 15
ResultsSwitching Analysis
! Initial design! Asymmetric current sharing
between paralleled IGBTs
"up to 140 % currentovershoot per IGBT
! Optimized design! Symmetric current sharing
between paralleled IGBTs
"max 60 % currentovershoot per IGBT
IGBTs1-4
IGBTs5-8
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ABB GroupJune 2, 2010 | Slide 16
ResultsH-Field Coupling Analysis
! Understand coupling effects through visualization ofmagnetic field vectors andcurrent density distributions
! Asymmetric coupling into VGE! Asymmetric terminal current paths! Open coupling loops in gate-emitter paths
(Note: 3D simulation using TLM method, Transmission Line Matrix)
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ABB GroupJune 2, 2010 | Slide 17
Outline
! Introduction! Numerical Method! Device Simulations! System Simulations!
Conclusion
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ABB GroupJune 2, 2010 | Slide 18
System SimulationsNew Challenges
! Complexity! Number of components
! Number of simulation cases! Physical dimensions
!Availability of input data
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ABB GroupJune 2, 2010 | Slide 19
Case StudyMedium Voltage Static Frequency Converter
! Static Frequency Converter! 16 inverter units
(IGCTs, 3-level ANPC)
! 1 common DC bus(~11 m length, +/neutral/-)
! 18 DC link capacitors(film capacitors)
"Distributed, low resistive LC circuit
"Risk of ringing and oscillations
"EM noise and thermal stress of DC link capacitors
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ABB GroupJune 2, 2010 | Slide 20
ModelingObjectives
! DC-link system impedance simulation! Identify system resonances! Analysis of individual impedance contributions
(bus bars, junctions, capacitors, cables)
! Design goal: reduce stray inductances
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ABB GroupJune 2, 2010 | Slide 21
ModelingBus Bar Thickness vs. Frequency
! Bus bar thickness: t = 2 cm! Frequency of interest: DC to 10 kHz"Skin depth ~ bar thickness
"Need for accurate & efficient volume discretization
"Non-uniform cross-sectional meshing
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ABB GroupJune 2, 2010 | Slide 22
Model VerificationSimulations vs. Measurements
"High accuracy with 0D narrowband solution
Impedance measurement setup
short circuit,0D narrowband
meas.sim.
Capacitor cables to bus bar
capacitive load,0D narrowband
meas.sim.
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ABB GroupJune 2, 2010 | Slide 23
Model ImprovementAcceleration
! Accurate volumediscretization for skin-and proximity effects
! Large PEEC model! Many ports! Large RL-matrix
in Simplorer
left 7 x intermediate right
! Acceleration throughdivide and conquer(domain decomposition)
! 3 small PEEC model! Few ports! 9 small RL-matrices
in Simplorer
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ABB GroupJune 2, 2010 | Slide 24
Model ImprovementFull Model
!9
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ABB GroupJune 2, 2010 | Slide 25
Model ImprovementDecomposed (Segmented) Model
!9
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ABB GroupJune 2, 2010 | Slide 26
Model ImprovementVerification
"High agreement between full
and segmented model
"High agreement between3D broadband PEEC and
0D narrowband segmented
model
- Full model- Segmented
model
- Full model- Segmented
model
- 0D narrowband3D broadband
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ABB GroupJune 2, 2010 | Slide 27
ResultsImpedance Discussion
! Single capacitor connectedat far end of bus bar
Cap + cables + bus bar
Cap + cables
Cap
" Impact onfres:
bus bar and cables
! Nine capacitors connectedalong bus bar
Complete bus bar
Simplified bus bar(no junction elements)
Ideal connection
" Impact onZcharacteristics:
bus bar and junctions
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ABB GroupJune 2, 2010 | Slide 28
Outline
! Introduction! Numerical Method! Device Simulations! System Simulations! Conclusion
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ABB GroupJune 2, 2010 | Slide 29
Conclusion
! Power electronics omnipresent in power T&D! EMC and EMI in power electronics are known issues
! PEEC as promising numerical method for its flexibility! Frequency range (DC to HF)! Scalability (R, L, C)! Time- and frequency domain! Circuit formulation
! Device simulations: Advanced state-of-the-art for! System simulations: Efficient methods in available & in use! Effective acceleration methods for large system simulations
! PEEC simulations as powerful tool for bus bar design
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ABB GroupJune 2, 2010 | Slide 30