3-D M ld F b i ti & R li tiD Mold Fabrication...
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3 D M ld F b i ti & R li ti 3-D Mold Fabrication & Replication 3 D Mold Fabrication & Replication 3 D Mold Fabrication by FIB for Polymer Replication 3-D Mold Fabrication by FIB for Polymer Replication: 3-D Mold Fabrication by FIB for Polymer Replication: 3 D Mold Fabrication by FIB for Polymer Replication: O Experimentation and Optimization Experimentation and Optimization Experimentation and Optimization Experimentation and Optimization Sponsored by course of Design for Manufacturing in Seoul National University Ch S Ki d J Bi P k Sponsored by course of Design for Manufacturing in Seoul National University S l N ti l U i it f T h l f F d I B S t Chung-Soo Kim and Jung-Bin Park Seoul National University of Technology for Focused Ion Beam System Chung Soo Kim and Jung Bin Park Nano Fusion Technology Laboratory in SNU for Polymer Replication 2-D AFM analysis of a fabricated micro-mold Mold Fabrication Experimental Design & 2-D AFM analysis of a fabricated micro-mold Mold Fabrication Experimental Design & Micro/Nanoscale Mold E l ti Micro/Nanoscale Mold Evaluation - Macro-Machining Evaluation Vertically Macro Machining Vertically Horizontally - Micro-Transfer & Injection Molding Levels of factors & Experimental condition Horizontally Micro Transfer & Injection Molding Levels of factors & Experimental condition - Charged Particle Beam Lithography Factor Charged Particle Beam Lithography Level Factor - Imprint Lithography Level Total count Dwell time Overlap No of slice F t S dL Total count Dwell time Overlap No. of slice - Femto-Second Laser 1 10000 05 05 5 3 D Vi C t ti Ei L 1 10000 0.5 0.5 5 3-D View Construction F AFM A l i - Eximer Laser 2 20000 1 1 10 From AFM Analysis 2 20000 1 1 10 3 30000 2 1.5 15 Focused Ion Beam Focused Ion Beam L 9 (3 4 ) Orthogonal Array & Experimental Results 9 - Merits Orthogonal Array Orthogonal Array Structure dimension Structure dimension Efficiency Efficiency Hi h th h tl t ti d th Orthogonal Array Orthogonal Array Structure dimension Structure dimension Efficiency Efficiency High throughput, low penetration depth Side Side - Hybrid process No No Total Total Dwell Dwell Beam Beam No. of No. of Width Width SN ratio SN ratio Height Height SN ratio SN ratio Side Side wall wall SN ratio SN ratio Height Height of rim of rim SN ratio SN ratio Sputter Sputter yield yield SN ratio SN ratio Cost Cost (200 EA (200 EA SN ratio SN ratio - Hybrid process No. No. Count Count time time overlap overlap slice slice (nm) (nm) SN ratio SN ratio (nm) nm) SN ratio SN ratio angle angle SN ratio SN ratio of rim of rim (nm) (nm) SN ratio SN ratio yield yield (nm nm 3 /pC pC) SN ratio SN ratio (200 EA (200 EA, , Won Won) SN ratio SN ratio Material destruction & Construction Destruction (Sputtering: Milling) Construction (Deposition: FIB-CVD) Various material Destruction (Sputtering: Milling) Construction (Deposition: FIB CVD) 1 1 1 1 1 1238.5 -31.7 459.5 -43.0 33.6 -21.2 10.8 -20.7 1432926 123.1 876973 -118.9 - Various material Destruction : All solid materials 2 1 2 2 2 1199.5 6.0 205.7 -51.9 18.8 -28.4 6.1 -15.7 1654608 124.4 759477 -117.6 Destruction : All solid materials C t ti C W Pt Construction : C, W, Pt 3 1 3 3 3 1215.0 -23.5 170.0 -52.7 15.7 -29.3 4.8 -13.5 1871086 125.4 671608 -116.5 - Scalable 3-D structure 4 2 1 2 3 1195 5 13 1 735 1 42 6 50 9 15 4 16 7 24 5 1468597 123 3 855671 118 6 Scalable 3 D structure 4 2 1 2 3 1195.5 -13.1 735.1 -42.6 50.9 -15.4 16.7 -24.5 1468597 123.3 855671 -118.6 Micro/Nanoscale 3-D construction Fresnel Micro-Lens Tip MEMS 5 2 2 3 1 1223 0 27 2 148 7 53 1 13 6 29 9 60 15 5 2486783 127 9 505326 114 1 Various application 5 2 2 3 1 1223.0 -27.2 148.7 -53.1 13.6 -29.9 6.0 -15.5 2486783 127.9 505326 -114.1 - Various application 6 2 3 1 2 1179 5 26 2 768 6 44 5 54 3 19 4 30 3 29 6 629341 116 0 1996748 126 0 MEMS/NEMS SPM tip 6 2 3 1 2 1179.5 -26.2 768.6 -44.5 54.3 -19.4 30.3 -29.6 629341 116.0 1996748 -126.0 MEMS/NEMS, SPM tip Mi /N l di ld i 7 3 1 3 2 1125 0 37 5 231 8 51 3 21 8 27 3 88 18 9 1640149 124 3 766172 117 7 Micro/Nanoscale medical device 7 3 1 3 2 1125.0 -37.5 231.8 -51.3 21.8 -27.3 8.8 -18.9 1640149 124.3 766172 -117.7 Photonic device 8 3 2 1 3 1172 0 28 9 769 7 44 6 52 9 17 9 27 2 28 7 762776 117 6 1647451 124 3 Micro/Nanoscale mold 8 3 2 1 3 1172.0 -28.9 769.7 -44.6 52.9 -17.9 27.2 -28.7 762776 117.6 1647451 -124.3 Micro/Nanoscale mold Manipulator Nano rotor Nano net Wine l 9 3 3 2 1 1183 5 24 3 769 9 44 6 53 3 18 4 27 3 28 7 861307 118 7 1458987 123 3 Manipulator Nano-rotor Nano-net Wine glass 9 3 3 2 1 1183.5 -24.3 769.9 -44.6 53.3 -18.4 27.3 -28.7 861307 118.7 1458987 -123.3 Ref condition Ref condition 1200 0 1200 0 600 0 600 0 45 0 45 0 00 00 lager lager smaller smaller Material Selection Ref. condition Ref. condition 1200.0 1200.0 600.0 600.0 45.0 45.0 0.0 0.0 lager lager smaller smaller Material Selection O i E i l C di i Patterned silicon substrate Optimum Experimental Condition for micro-mold fabrication - Silicon substrate for micro mold fabrication Optimal condition Silicon substrate E Evaluation value Easy to get Total count Dwell time Overlap No. of slice Good surface roughness Width 10000 1 1 10 Good surface roughness Mesh Pattern for good positioning Width 10000 1 1 10 Mesh Pattern for good positioning Structural Height 20000 05 05 15 4 x 4 arrays in 1 substrate: 10 x 10 arrays in 1 array stability Height 20000 0.5 0.5 15 Conical structure Side wall angle 30000 05 05 15 - Conical structure Side wall angle 30000 0.5 0.5 15 Variable 3-D structure Physical error Height if the rim 10000 1 05 10 Variable 3 D structure Dimension : Diameter (1 2 nm) Depth (0 6 nm) Physical error Height if the rim 10000 1 0.5 10 Dimension : Diameter (1.2 nm), Depth (0.6 nm) Desired Micro-mold structure Sputter yield 10000 0.5 1.5 5 Desired Micro mold structure Efficiency Sputter yield 10000 0.5 1.5 5 Cost 10000 0.5 1.5 5 Nanofabrication Schematics Nanofabrication Schematics Di i Scan Method Discussion Scan Method Discussion Str ct ral stabilit - Spiral Scan - Structural stability - Spiral Scan Different condition come out for with height and sidewall angle A part of vector scan Different condition come out for with, height, and sidewall angle A part of vector scan Precious control (higher resolution than raster scan) Always good result in case of width Precious control (higher resolution than raster scan) Btw Height & Sidewall - 3-D Conical structure Btw Height & Sidewall Dwell time & Overlap & No of slice were the same 3 D Conical structure V i bl 3 D Raster scan Spiral scan Dwell time & Overlap & No. of slice were the same T l 30 000 ( ll SN i diff h hih) Variable 3-D structure Raster scan Spiral scan Total count : 30,000 ( smaller SN ratio difference when height) Dimension : Diameter (1.2 micrometer), Depth (0.6 micrometer) - Physical error Dimension : Diameter (1.2 micrometer), Depth (0.6 micrometer) Physical error P t Sl ti Base on Gaussian beam distribution, leads surface amorphization Parameter Selection Smaller when short irradiation time applied Smaller when short irradiation time applied Effi i I b di i C i bt R t &S i lS - Efficiency SN ratio of Height SN ratio of sidewall angle - Ion beam condition Comparisons btw Raster & Spiral Scan Sputter yield & Cost are the same 30K VG 2 i b Raster scan Spiral scan Sputter yield & Cost are the same 30 KeV Ga2+ ion beam Raster scan Spiral scan Short time when optimized by indicating the continuously-decreasing tendency of sputter yield as a function of time. 91 pA of ion beam, 30 nm of spot diameter, and 13 A/cm2 1 Ion dose Count Number 30 nm pixel size when 24 micrometer field of view (screen size) 1 Ion dose Count Number 30 nm pixel size when 24 micrometer field of view (screen size) 2 Dwell time Dwell time - Processing condition (4 main factors) 2 Dwell time Dwell time Polymer Replication Ion dose (ions/cm2) Q antit of ion 3 Beam overlap Beam overlap Polymer Replication Ion dose (ions/cm2): Quantity of ion 3 Beam overlap Beam overlap Dwell time (usec): Staying time of ion beam in 1 pixel 4 No of slice Beam overlap (%): How much the spot dia overlaps 4 - No. of slice Beam overlap (%): How much the spot dia. overlaps N f li No. of slice: PUA li ti PUA replication Fabrication Strategy Fabrication Strategy Continuously repeat whole 5 scan several times at one center point PDMS li i PDMS replication C ti Sli i M th d E tended Contin o s Slicing sing Spiral Scan Continuous Slicing Method Extended Continuous Slicing using Spiral Scan Conclusion Evaluation Conclusion Evaluation Structural stability - Efficiency Feature definition - Fabricate 3-D micro-mold - Structural stability Efficiency Fabricate 3 D micro mold A : Diameter [nm] Sputter yield [nm 3 /pC] - Continuous slicing method with spiral scan B : Depth [nm] Cost Continuous slicing method with spiral scan E l ti f St t l t bilit & Effi i b i ifi l ti f B : Depth [nm] C Hih fh i [ ] Cost - Evaluation of Structural stability & Efficiency by using a specific evaluation form C : Height of the rim [nm] Optimization through Taguchi’s experimental design E : Sidewall angle ( ° ) - Optimization through Taguchi s experimental design E : Sidewall angle ( ) Fabrication of mold by optimized condition Chung Soo Kim 02 880 9073 reaves kim@gmail com - Fabrication of mold by optimized condition Chung-Soo Kim, 02-880-9073, [email protected] J Bi P k 02 880 9073 jb k82@ k Polymer replication by a silicon micro mold Jeong-Bin Park, 02-880-9073, [email protected] - Polymer replication by a silicon micro-mold S INNOVATIVE DESIGN AND INTEGRATED MANUFACTURING LAB., SEOUL NATIONAL UNIVERSITY INNOVATIVE DESIGN AND INTEGRATED MANUFACTURING LAB., SEOUL NATIONAL UNIVERSITY
Transcript of 3-D M ld F b i ti & R li tiD Mold Fabrication...
3 D M ld F b i ti & R li ti3-D Mold Fabrication & Replication3 D Mold Fabrication & Replication
3 D Mold Fabrication by FIB for Polymer Replication3-D Mold Fabrication by FIB for Polymer Replication:3-D Mold Fabrication by FIB for Polymer Replication:3 D Mold Fabrication by FIB for Polymer Replication:OExperimentation and OptimizationExperimentation and OptimizationExperimentation and OptimizationExperimentation and Optimization
Sponsored by course of Design for Manufacturing in Seoul National University
Ch S Ki d J Bi P kSponsored by course of Design for Manufacturing in Seoul National University
S l N ti l U i it f T h l f F d I B S tChung-Soo Kim and Jung-Bin Park Seoul National University of Technology for Focused Ion Beam SystemChung Soo Kim and Jung Bin ParkNano Fusion Technology Laboratory in SNU for Polymer Replicationg
2-D AFM analysis of a fabricated micro-mold
MMold Fabrication Experimental Design &2-D AFM analysis of a fabricated micro-mold
MMold Fabrication Experimental Design &Micro/Nanoscale Mold p gE l ti
Micro/Nanoscale Mold
Evaluation- Macro-Machining
EvaluationVerticallyMacro Machining VerticallyHorizontally- Micro-Transfer & Injection Molding Levels of factors & Experimental conditionHorizontallyMicro Transfer & Injection Molding Levels of factors & Experimental condition
- Charged Particle Beam Lithography FactorCharged Particle Beam LithographyLevel
Factor
- Imprint Lithography LevelTotal count Dwell time Overlap No of slicep g p y
F t S d LTotal count Dwell time Overlap No. of slice
- Femto-Second Laser1 10000 0 5 0 5 5 3 D Vi C t ti
E i L1 10000 0.5 0.5 5 3-D View Construction
F AFM A l i- Eximer Laser2 20000 1 1 10
From AFM Analysis2 20000 1 1 10
3 30000 2 1.5 15
FFocused Ion BeamFFocused Ion BeamL9(34) Orthogonal Array & Experimental Results9( ) g y p
- Merits Orthogonal ArrayOrthogonal Array Structure dimensionStructure dimension EfficiencyEfficiencye tsHi h th h t l t ti d th
Orthogonal ArrayOrthogonal Array Structure dimensionStructure dimension EfficiencyEfficiencyHigh throughput, low penetration depth
SideSide
- Hybrid process NoNo TotalTotal DwellDwell BeamBeam No. of No. of WidthWidth SN ratioSN ratio HeightHeight SN ratioSN ratio
Side Side wall wall SN ratioSN ratio
Height Height of rimof rim SN ratioSN ratio
Sputter Sputter yieldyield SN ratioSN ratio
Cost Cost (200 EA(200 EA SN ratioSN ratio- Hybrid process No.No. CountCount timetime overlapoverlap sliceslice (nm)(nm) SN ratioSN ratio gg
((nm)nm) SN ratioSN ratio angleangle SN ratioSN ratio of rimof rim(nm)(nm)
SN ratioSN ratio yieldyield((nmnm33//pCpC))
SN ratioSN ratio (200 EA(200 EA, , WonWon))
SN ratioSN ratio
Material destruction & Construction Destruction (Sputtering: Milling) Construction (Deposition: FIB-CVD)( )( ) (( pp )) ))
Various materialDestruction (Sputtering: Milling) Construction (Deposition: FIB CVD)
1 1 1 1 1 1238.5 -31.7 459.5 -43.0 33.6 -21.2 10.8 -20.7 1432926 123.1 876973 -118.9- Various material
Destruction : All solid materials2 1 2 2 2 1199.5 6.0 205.7 -51.9 18.8 -28.4 6.1 -15.7 1654608 124.4 759477 -117.6
Destruction : All solid materials C t ti C W PtConstruction : C, W, Pt 3 1 3 3 3 1215.0 -23.5 170.0 -52.7 15.7 -29.3 4.8 -13.5 1871086 125.4 671608 -116.5
- Scalable 3-D structure 4 2 1 2 3 1195 5 13 1 735 1 42 6 50 9 15 4 16 7 24 5 1468597 123 3 855671 118 6Scalable 3 D structure 4 2 1 2 3 1195.5 -13.1 735.1 -42.6 50.9 -15.4 16.7 -24.5 1468597 123.3 855671 -118.6
Micro/Nanoscale 3-D construction Fresnel Micro-Lens TipMEMS5 2 2 3 1 1223 0 27 2 148 7 53 1 13 6 29 9 6 0 15 5 2486783 127 9 505326 114 1
Various applicationp
5 2 2 3 1 1223.0 -27.2 148.7 -53.1 13.6 -29.9 6.0 -15.5 2486783 127.9 505326 -114.1- Various application
6 2 3 1 2 1179 5 26 2 768 6 44 5 54 3 19 4 30 3 29 6 629341 116 0 1996748 126 0MEMS/NEMS SPM tip
6 2 3 1 2 1179.5 -26.2 768.6 -44.5 54.3 -19.4 30.3 -29.6 629341 116.0 1996748 -126.0MEMS/NEMS, SPM tipMi /N l di l d i 7 3 1 3 2 1125 0 37 5 231 8 51 3 21 8 27 3 8 8 18 9 1640149 124 3 766172 117 7Micro/Nanoscale medical device 7 3 1 3 2 1125.0 -37.5 231.8 -51.3 21.8 -27.3 8.8 -18.9 1640149 124.3 766172 -117.7
Photonic device 8 3 2 1 3 1172 0 28 9 769 7 44 6 52 9 17 9 27 2 28 7 762776 117 6 1647451 124 3Micro/Nanoscale mold
8 3 2 1 3 1172.0 -28.9 769.7 -44.6 52.9 -17.9 27.2 -28.7 762776 117.6 1647451 -124.3Micro/Nanoscale mold
Manipulator Nano rotor Nano net Wine l 9 3 3 2 1 1183 5 24 3 769 9 44 6 53 3 18 4 27 3 28 7 861307 118 7 1458987 123 3Manipulator Nano-rotor Nano-net Wine glass 9 3 3 2 1 1183.5 -24.3 769.9 -44.6 53.3 -18.4 27.3 -28.7 861307 118.7 1458987 -123.3
Ref conditionRef condition 1200 01200 0 600 0600 0 45 045 0 0 00 0 lagerlager smallersmallerMaterial Selection
Ref. conditionRef. condition 1200.01200.0 600.0600.0 45.045.0 0.00.0 lagerlager smallersmallerMaterial Selection
O i E i l C di iPatterned silicon substrate Optimum Experimental Conditionfor micro-mold fabrication
- Silicon substratefor micro mold fabrication
Optimal conditionSilicon substrateE
Evaluation valueEasy to get Total count Dwell time Overlap No. of slice
Good surface roughness Width 10000 1 1 10Good surface roughnessMesh Pattern for good positioning
Width 10000 1 1 10Mesh Pattern for good positioning Structural Height 20000 0 5 0 5 154 x 4 arrays in 1 substrate: 10 x 10 arrays in 1 array stability Height 20000 0.5 0.5 15y y y
Conical structurey
Side wall angle 30000 0 5 0 5 15- Conical structure Side wall angle 30000 0.5 0.5 15
Variable 3-D structure Physical error Height if the rim 10000 1 0 5 10Variable 3 D structureDimension : Diameter (1 2 nm) Depth (0 6 nm)
Physical error Height if the rim 10000 1 0.5 10Dimension : Diameter (1.2 nm), Depth (0.6 nm) Desired Micro-mold structure Sputter yield 10000 0.5 1.5 5Desired Micro mold structure
EfficiencySputter yield 10000 0.5 1.5 5
EfficiencyCost 10000 0.5 1.5 5
Nanofabrication SchematicsNanofabrication SchematicsDi iScan Method DiscussionScan Method DiscussionStr ct ral stabilit- Spiral Scan - Structural stability- Spiral Scan
Different condition come out for with height and sidewall angleA part of vector scan
Different condition come out for with, height, and sidewall angleA part of vector scan Precious control (higher resolution than raster scan)
Always good result in case of width Precious control (higher resolution than raster scan)
Btw Height & Sidewall- 3-D Conical structure
Btw Height & SidewallDwell time & Overlap & No of slice were the same3 D Conical structure
V i bl 3 D Raster scan Spiral scanDwell time & Overlap & No. of slice were the sameT l 30 000 ( ll SN i diff h h i h )Variable 3-D structure Raster scan Spiral scan Total count : 30,000 ( smaller SN ratio difference when height)
Dimension : Diameter (1.2 micrometer), Depth (0.6 micrometer) - Physical errorDimension : Diameter (1.2 micrometer), Depth (0.6 micrometer) Physical error
P t S l tiBase on Gaussian beam distribution, leads surface amorphization
Parameter Selection Smaller when short irradiation time appliedSmaller when short irradiation time applied
Effi iI b di i C i bt R t & S i l S
- Efficiency SN ratio of Height SN ratio of sidewall angle- Ion beam condition Comparisons btw Raster & Spiral Scan
ySputter yield & Cost are the same
g g
30 K V G 2 i b Raster scan Spiral scanSputter yield & Cost are the same
30 KeV Ga2+ ion beam Raster scan Spiral scan Short time when optimized by indicating the continuously-decreasing tendency of sputter yield as a function of time.91 pA of ion beam, 30 nm of spot diameter, and 13 A/cm2 1 Ion dose Count Number
y g y g y yp , p ,
30 nm pixel size when 24 micrometer field of view (screen size)1 Ion dose Count Number
30 nm pixel size when 24 micrometer field of view (screen size)2 Dwell time Dwell time- Processing condition (4 main factors) 2 Dwell time Dwell time
Polymer Replicationocess g co d o ( a ac o s)Ion dose (ions/cm2) Q antit of ion 3 Beam overlap Beam overlap
Polymer ReplicationIon dose (ions/cm2): Quantity of ion 3 Beam overlap Beam overlap
y pDwell time (usec): Staying time of ion beam in 1 pixel 4 No of slice( ) y g pBeam overlap (%): How much the spot dia overlaps
4 - No. of sliceBeam overlap (%): How much the spot dia. overlapsN f liNo. of slice:
PUA li tiPUA replication
Fabrication StrategyFabrication Strategyg
Continuously repeat whole 5 scan several timesat one center pointp
PDMS li iPDMS replicationp
C ti Sli i M th d E tended Contin o s Slicing sing Spiral ScanContinuous Slicing Method Extended Continuous Slicing using Spiral Scan
ConclusionEvaluation ConclusionEvaluationStructural stability - EfficiencyFeature definition - Fabricate 3-D micro-mold- Structural stability Efficiency Fabricate 3 D micro mold
A : Diameter [nm] Sputter yield [nm3/pC] - Continuous slicing method with spiral scan[ ]B : Depth [nm] Cost
Continuous slicing method with spiral scanE l ti f St t l t bilit & Effi i b i ifi l ti fB : Depth [nm]
C H i h f h i [ ]Cost - Evaluation of Structural stability & Efficiency by using a specific evaluation form
C : Height of the rim [nm]y y y g p
Optimization through Taguchi’s experimental designE : Sidewall angle ( ° ) - Optimization through Taguchi s experimental designE : Sidewall angle ( )Fabrication of mold by optimized condition
Chung Soo Kim 02 880 9073 reaves kim@gmail com- Fabrication of mold by optimized condition
Chung-Soo Kim, 02-880-9073, [email protected] Bi P k 02 880 9073 jb k82@ kPolymer replication by a silicon micro mold Jeong-Bin Park, 02-880-9073, [email protected] Polymer replication by a silicon micro-mold
SINNOVATIVE DESIGN AND INTEGRATED MANUFACTURING LAB., SEOUL NATIONAL UNIVERSITYINNOVATIVE DESIGN AND INTEGRATED MANUFACTURING LAB., SEOUL NATIONAL UNIVERSITY
