2sc3831
1
71 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3831 600 500 10 10(Pulse20) 4 100(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C ■Absolute maximum ratings ■Electrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB 2SC3831 1max 100max 500min 10to30 0.5max 1.3 max 8typ 105typ Unit mA μA V V V MHz pF Conditions VCB=600V VEB=10V IC=25mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=–1A VCB=10V, f=1MHz 2SC3831 (Ta=25°C) (Ta=25°C) I C–V CE Characteristics (Typical) h FE–I C Characteristics (Typical) t on•t stg•t f –I C Characteristics (Typical) θ j-a–t Characteristics I C–V BE Temperature Characteristics (Typical) VCE(sat),VBE(sat)–I C Temperature Characteristics (Typical) Pc–Ta Derating Reverse Bias Safe Operating Area Safe Operating Area (Single Pulse) 0 0 2 4 6 8 10 2 1 3 4 Collector-Emitter Voltage VCE(V) Collector Current I C(A) 800mA 1A 600mA 400mA 200mA I B=1.2A 100mA 0.02 0.1 0.05 1 5 10 0.5 0 1 (I C/I B=5) Collector Current I C(A) VBE(sat) 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp) 25˚C –55˚C VCE(sat) 1 2 5 ˚ C ( C a s e T e m p ) 0.2 1 0.5 10 5 0.1 0.5 5 10 1 Switching Time t on•t stg•t f ( μs) Collector Current I C(A) t stg t on t f VCC 200V I C:I B1:I B2=10:1:–2 0.1 1 2 0.5 1 10 100 1000 Time t(ms) Transient Thermal Resistance θ j-a(˚C/W) 100 50 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) Maximum Power Dissipation PC(W) With Infinite heatsink Without Heatsink 100 500 600 50 1 0.5 1 0.05 0.01 10 30 5 Collector-Emitter Voltage VCE(V) Collector Current I C(A) 10 50 8 100 500 600 0.05 0.02 1 0.5 0.1 10 30 5 Collector-Emitter Voltage VCE(V) Collector Current I C(A) Without Heatsink Natural Cooling DC 100μs 10ms 1ms Collector-Emitter Saturation Voltage VCE(sat) (V) Base-Emitter Saturation Voltage VBE(sat) (V) 0 10 4 2 8 6 0 1.2 0.4 0.6 0.8 1.0 0.2 Base-Emittor Voltage VBE(V) Collector Current I C(A) (VCE=4V) 125˚C (Case Temp) –55˚C (Case Temp) 0.02 0.1 0.05 1 10 5 0.5 5 10 50 Collector Current I C(A) DC Current Gain hFE (VCE=4V) 125˚C 25˚C –55˚C 25˚C (Case Temp) Without Heatsink Natural Cooling L=3mH I B2 =–0.5A Duty:less than 1% ■Typical Switching Characteristics (Common Emitter) VCC (V) 200 RL (Ω) 40 IC (A) 5 VBB2 (V) –5 IB2 (A) –1.0 ton (μs) 1max tstg (μs) 4.5max tf (μs) 0.5max IB1 (A) 0.5 VBB1 (V) 10 External Dimensions MT-100(TO3P) 15.6±0.4 9.6 19.9 ±0.3 4.0 2.0 5.0 ±0.2 1.8 ø3.2±0.1 2 3 1.05 +0.2 -0.1 20.0min 4.0max B E 5.45±0.1 5.45±0.1 C 4.8±0.2 0.65 +0.2 -0.1 1.4 2.0±0.1 a b Weight : Approx 6.0g a. Type No. b. Lot No.
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Transcript of 2sc3831
71
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3831
600
500
10
10(Pulse20)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Absolute maximum ratings Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
2SC3831
1max
100max
500min
10to30
0.5max
1 . 3 max
8typ
105typ
Unit
mA
µA
V
V
V
MHz
pF
Conditions
VCB=600V
VEB=10V
IC=25mA
VCE=4V, IC=5A
IC=5A, IB=1A
IC=5A, IB=1A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
2SC3831(Ta=25°C) (Ta=25°C)
IC–VCE Characteristics (Typical)
hFE–IC Characteristics (Typical) ton•tstg•t f–IC Characteristics (Typical) θ j -a–t Characteristics
IC–VBE Temperature Characteristics (Typical)VCE(sat) ,VBE(sat)–IC Temperature Characteristics (Typical)
Pc–Ta DeratingReverse Bias Safe Operating AreaSafe Operating Area (Single Pulse)
00
2
4
6
8
10
21 3 4
Col lector-Emit ter Vol tage VCE(V)
Co
lle
cto
r C
urr
en
t IC
(A)
800mA1A
600mA
400mA
200mA
IB=1.2
A
100mA
0.02 0.10.05 1 5 100.50
1
(IC/ IB=5)
Col lector Current IC(A)
VBE(sat)
125˚C (Case Temp)
25˚C (Case Temp)
–55˚C (Case Temp)
25˚C
–55˚CVCE(sat)
125˚C
(Cas
eTe
mp)
0 .2 10.5 1050.1
0.5
5
10
1
Sw
itc
hin
g T
ime
to
n•t
stg
•tf(
µs
)
Col lector Current IC(A)
tstg
ton
t f
VCC 200VIC: IB1: IB2=10:1:–2
0.1
1
2
0.5
1 10 100 1000
Time t(ms)
Tra
nsie
nt T
herm
al R
esis
tanc
e θj
-a(˚
C/W
)
100
50
3.50
0 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Ma
xim
um
Po
we
r D
iss
ipa
tio
n P
C(W
)
Wi th Inf in i te heatsink
Without Heatsink
100 500 60050
1
0.5
1
0.05
0.01
10
30
5
Col lector-Emit ter Vol tage VCE(V)
Co
lle
cto
r C
urr
en
t IC
(A)
10 508 100 500 600
0.05
0.02
1
0.5
0.1
10
30
5
Col lector-Emit ter Vol tage VCE(V)
Co
lle
cto
r C
urr
en
t IC
(A)
Wi thout HeatsinkNatural Cool ing
DC
100µs
10ms
1ms
Co
lle
cto
r-E
mit
ter
Sa
tura
tio
n V
olt
ag
e V
CE
(sa
t)(V
)B
as
e-E
mit
ter
Sa
tura
tio
n V
olt
ag
e V
BE
(sa
t)(V
)
0
10
4
2
8
6
0 1.20.4 0.6 0.8 1.00.2
Base-Emit tor Vol tage VBE(V)
Co
lle
cto
r C
urr
en
t IC
(A)
(VCE=4V)
125˚
C (C
ase
Tem
p)
–55˚
C (
Cas
e T
emp)
0 .02 0.10.05 1 1050.55
10
50
Col lector Current IC(A)
DC
Cu
rre
nt
Ga
in h
FE
(VCE=4V)
125˚C
25˚C
–55˚C
25˚C
(C
ase
Tem
p)
Wi thout HeatsinkNatural Cool ingL=3mHIB2 =–0.5ADuty:less than 1%
Typical Switching Characteristics (Common Emitter)
VCC(V)
200
RL(Ω)
40
IC(A)
5
VBB2(V)
–5
IB2(A)
–1.0
ton(µs)
1max
tstg(µs)
4.5max
tf(µs)
0.5max
IB1(A)
0.5
VBB1(V)
10
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
19.9
±0.
3
4.0
2.0
5.0±
0.2
1.8
ø3.2±0.1
2
3
1.05+0.2-0.1
20.0
min
4.0m
ax
B E5.45±0.1 5.45±0.1
C
4.8±0.2
0.65+0.2-0.1
1.4
2.0±0.1
a
b
Weight : Approx 6.0ga. Type No.b. Lot No.
