25 nm InP HEMT LNAs and Receiver Technology for the TWICE ...
Transcript of 25 nm InP HEMT LNAs and Receiver Technology for the TWICE ...
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25 nm InP HEMT LNAs and Receiver
Technology for the TWICE Instrument
6-15-2016
William R. Deal, Pekka Kangaslahti*, Alex Zamora, Erich Schlecht*,
Kevin Leong, Gerry Mei, Sean Shih, and Steven C. Reising**
Presented by Bill Deal
Northrop Grumman, Jet Propulsion Laboratory*
and Colorado State University**
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Outline
• Outline
• Motivation
• 670 GHz Receiver Update
• 230-390 GHz Update
• Conclusion
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TWICE Receiver Overview
• Three millimeter/submillimeter wave receivers on instrument
• Two receivers implemented in recently available 25 nm InP HEMT – 660-680 GHz dual direct detection receivers (two orthogonal polarizations) – 230-390 GHz broadband receiver
• This talk provides an overview of progress of these two receivers
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Motivation
Scaling enables significantly enhanced performance
– 25 nm gatelength – fmax: 1.5 THz – fT: 0.61 THz
0.5umD S
0
5
10
15
20
25
30
35
10 100 1000
Tran
sistorg
ain(dB)
Frequency(GHz)
h21
MSG/MAG
fT=610GHz
fMAX=1.5THz
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Submillimeter LNA’s
Ambient Temperature
[K]
Noise Figure
[dB]
Noise Temperatur
e [K]
HEMT 270 25
9.6 3.8
2355 400
GaAs Schottky
270 9.4 DSB (12.4 SSB*)
2236 DSB (4750 SSB*)
HEB Cryo 2.7 DSB (5.7 SSB*)
250 DSB (788 SSB*)
SIS 4 1.3 DSB (4.3 SSB*)
100 DSB (491 SSB*)
Ambient Temperature
[K]
Noise Figure
[dB]
Noise Temperatur
e [K]
HEMT 270 12 3361
GaAs Schottky
270 9.8 DSB (12.8 SSB*)
DSB 2500 (5236 SSB*)
670 GHz Comparison
850 GHz Comparison
InP HEMT LNA Noise Temperature
• InP HEMT LNA sensitivity approaches that of DSB mixers.
• InP HEMT LNA is superior to that of mixers operated in SSB mode.
• This extends to cryogenic operation. *Performance estimated from plot. SSB is calculated from DSB by adding 3 dB
Mixer DSB Noise Performance
After Dr. I. Mehdi
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THz Monolithic Integrated Circuit (TMIC)
• Integration Challenges: • Need wide chip for circuit, but narrow for transition • Cross-shaped chip
• Passive TMIC Technology: • High compaction. • HEMT to HEMT spacing of 10 µm.
Coplanar Waveguide (CPW)Coplanar Waveguide (CPW)GNDSignal
InP
GND
• Transistor Technology: • 25 nm InP HEMT
230 µm
• 655 µm
375 µm
10 µm
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670 GHz Receiver Approach
LNA1
LNA2
LNA3
BPF1
BPF2
VDI Detector
JPL Horn
View of module internals
BPF LNA LNA LNA BPF
Detector Video Amp
• Final receiver is an integrated, single-block 670 GHz Receiver
• Module includes: • Feedhorn (JPL) • LNA MMICs • Bandpass filters • Zero Bias Detector (VDI) • Video Circuitry
• Each functional block has been prototyped and evaluated
• Components have been evaluated together to evaluate integrated performance
Performance Goals NT 2500 K BW 20 GHz DC power 270 mW 13x50x8mm mm^3
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670 GHz LNA
0
5
10
15
20
25
660 665 670 675 680
NoiseFigurean
dAssociated
Gain
(dB)
Frequency(GHz)
Packaged LNA TMIC
• 670-GHz LNA: – 8-stage, single-ended design – 2-Finger 12 µm HEMTs – 655 µm x 375 µm die size
Packaged 670-GHz LNA Measured Gain and Noise Figure
9.6 dB Measured Noise Figure (NT=2400K)
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670 GHz LNA Gain vs. Temperature
�Gain=-0.1169�T-0.631
-5
-4
-3
-2
-1
0
1
2
-30 -20 -10 0 10 20 30 40
�Gain[dB]
�T[°C]
670 GHz LNA over Temperature � Gain vs. �T
~0.01 dB/C per Device Measured
Hot Plate
DUT Extender Port 1 Extender Port 2
Temp varied from 0 – 50 C
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Detector Responsivity Measurements
10
-40
-32
-24
-16
-8
0
0
500
1000
1500
2000
2500
650 660 670 680 690
Inpu
tPow
er[d
Bm]
Respon
sivity[m
V/mW]
Frequency[GHz]
-40
-32
-24
-16
-8
0
0
500
1000
1500
2000
2500
650 660 670 680 690
Inpu
tPow
er[d
Bm]
Respon
sivity[m
V/mW]
Frequency[GHz]
Fabricated and tested Detector Prototyping Module
Detector Measured Responsivity vs. Frequency
Detector Measured Responsivity vs. Frequency
VDI Detector (Within Split-Block Waveguide)
Measured with two different
input power levels
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670 GHz Radiation Pattern
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Bandpass filter
• CNC Machined Bandpass filter
12
-60
-50
-40
-30
-20
-10
0
640 650 660 670 680 690 700
Inse
rtio
n L
oss
(d
B)
Frequency (GHz)
sn-002 sn-005 sn-006 sn-007 sn-008
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Other Filter Fabrication Techniques
-80
-70
-60
-50
-40
-30
-20
-10
0
10
500 550 600 650 700 750
(dB)
(GHz)
s11(dB)s21(dB)s12(dB)s22(dB)
From DARPA THz Electronics
DRIE Filter
Filter formed with DRIE (Deep Reactive Ion Etch)
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670 GHz “Breadboard” Receiver Noise Temperature
ColdLoadTemperature
[K]
HotLoadTemperature
[K]
HotLoadOutputVoltage
[mV]
ColdLoadOutputVoltage
[mV]
CalculatedNoiseTemperature
[K]
178 290.65 61.05 59.19 3406.81
BPF LNA LNA LNA BPF
Detector Video Amp
660-680 GHz Receiver Block Diagram: Hot Absorber
Cold Absorber
Room Temperature 670 GHz Receiver Noise Temperature Characterization
Output Voltage
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230-390 GHz Receiver
• A single feedhorn integrated in the module will cover the 240, 310 GHz direct detection bands and the 380 GHz sounder band
• On-wafer test results for a full chip set
390LN1A
320LN1A
380MX1A 190DB1A
VDI Schottky diode
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230-390 GHz Receiver
• 15-dB gain measured on-wafer • Matches simulations • Additional ripple from on-wafer
calibration/ noise in measurement
240 Channel
310 Channel
380 Soun der
Photograph of 230-390 GHz MMIC
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230-390 GHz Receiver
240 Channel
310 Channel
Photograph of 230-320 GHz MMIC • 18-dB gain measured on-wafer • Matches simulations
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230-390 GHz Receiver: Packaging Approach
300
400
500
600
700
800
900
1000
0
3
6
9
12
15
18
21
200 220 240 260 280 300 320
NoiseTem
perature[K
]
Gain[dB]
Frequency[GHz]
Gain[dB]S21packagedS21packagedTrecTDUT
on chip transitions
0
2
4
6
8
10
0
4
8
12
16
20
220 230 240 250 260 270 280 290 300 310 320
NoiseFigure[dB]
Associated
Gain[dB]
Frequency(GHz)
3.8 dB Measured Noise Figure (NT 400K) @ 240 GHz
4.3 dB Measured Noise Figure (NT 500K) @ 310 GHz
wirebonded microstrip to WG
transitions
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230-390 GHz Receiver
-20
-16
-12
-8
-4
0
220 240 260 280 300 320
S-Pa
rameters[dB
]
Frequency[GHz]
S11S21S22 -20
-16
-12
-8
-4
0
220 240 260 280 300 320
S-Pa
rameters[dB
]
Frequency[GHz]
S11S21S22
596 µm CPW Line (Loss ~ 1.8 dB)
596 µm MS Line (Loss ~ 0.5 dB)
Single Transition Loss Single Transition Loss
Flange-to-flange measurement of depicted MMIC Flange-to-flange measurement of depicted MMIC
230-320 GHz Transition Loss Estimation
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230-390 GHz Receiver
0
2
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6
8
10
0
4
8
12
16
20
360 370 380 390
NoiseFigure[dB]
Associated
Gain[dB]
Frequency[GHz]
0
2
4
6
8
10
0
4
8
12
16
20
360 370 380 390
NoiseFigure[dB]
Associated
Gain[dB]
Frequency[GHz] 5 dB Measured Noise Figure (NT=650K) @ 380 GHz
230–390 GHz LNA With Integrated
narrowband waveguide transitions
360–390 GHz LNA Integrated waveguide
transitions
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230-390 GHz Receiver
0
2
4
6
8
10
0
4
8
12
16
20
220 240 260 280 300 320 340 360 380 400
NoiseFigure[dB]
Associated
Gain[dB]
Frequency[GHz]
7 dB Measured Noise Figure (NT=1200K) @ 380 GHz
5.5 dB Measured Noise Figure (NT=650K) @ 310 GHz
6 dB Measured Noise Figure (NT=900K) @ 240 GHz
Currently: 230-390 GHz LNA with on-chip transition does not provide a significant advantage in receiver noise temperature compared to a diplexer followed by narrower band amplifiers
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230-390 GHz Receiver
380 GHz second harmonic mixer - Broadband, 370 to 390 GHz - Conversion loss ~ 15 dB for 6 dBm
LO power - Balanced design uses 2 transistors
pumped 180° out of phase - Chip size 375 X 1000 μm2
LO input
VG VD/IF
RF waveguide antenna TRANSISTORS
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fundamental Pout
230-390 GHz Receiver 190 GHz frequency multipliers
x2
x12
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Conclusion
• Significant progress has been made in the new TWICE receivers – “Breadboard” demonstration of 670 GHz direct detect receiver complete – 230-390 GHz MMIC components demonstrated
• Currently completing 2nd MMIC design iteration
• Integrated Receiver housing on order
• Prototype will be assembled and tested by August
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