2010 IEEE NUCLEAR & SPACE RADIATION EFFECTS...

2010 IEEE NUCLEAR & SPACE RADIATION EFFECTS CONFERENCE

J U L Y 1 9 — 2 3 , 2 0 1 0S H E R A T O N D E N V E R D O W N T O W N H O T E L

D E N V E R , C O L O R A D O

Sponsored by IEEE/NPSS Radiation Effects Committee

Supported by Defense Threat Reduction Agency | Air Force Research Laboratory Sandia National Laboratories | Jet Propulsion Laboratory NASA Electronic Parts and Packaging Program | BAE Systems | Intersil | HoneywellBoeing | Northrop Grumman | Southwest Research Institute | Aeroflex Colorado Springs

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Plaza Ballrooms

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Industrial Exhibits

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Posters andWorkshop

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Short CourseReception

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Conference FacilitiesConference Facilities

ScheduleSchedule

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7:30

8:00

8:15 8:30 9:00 9:3010:0010:3011:00

11:3012:0012:30 1:00 1:30 2:00 2:30 3:00 3:30 4:00 4:30 5:00 5:30 6:00 6:30

FridayJuly23FridayJuly23

ThursdayJuly22

ThursdayJuly22

WednesdayJuly21

WednesdayJuly21

TuesdayJuly20

TuesdayJuly20

MondayJuly19

MondayJuly19TimeTime

[7:30]ContinentalBreakfast,PlazaBallroomsA,D


[7:30]ContinentalBreakfast,PlazaExhibitArea



[8:00] Short Course IntroductionRonaldLacoePlazaBallroomsE,F

[8:15] Part 1 – Developing Radiation-Hardened Complex System-On-Chip ASICs In Commercial Ultra Deep Submicron CMOS ProcessesJeremyPopp

[10:15] Part 2 – Microprocessors And SRAMs For Space: Basics, Radiation Effects And DesignLawrenceT.Clark

[1:00] Part 3 – Present And Future Non-Volatile Memories For SpaceSimoneGerardinandAlessandroPaccagnella

[3:40] Part 4 – Reliability And Qualification Of Custom Integrated Circuits For Harsh Environment Applications Using Commercial Wafer FoundriesDavidKerwin

[8:30] Conference OpeningPlazaBallroomsE,F

[9:10] Session A Basic Mechanisms of Radiation Effects

[1:30] Session C Space and Terrestrial Environments

[3:05] Session D Single-Event Effects: Mechanisms and Modeling

[10:45]Session BPhotonic Devices and Integrated Circuits

[8:30] Invited TalkHigh Power Microwave Sources – Present Status and Future TrendsEdlSchamilogluPlazaBallroomsE,F

[8:30] Invited TalkDenver: Ups & Downs of A Mining TownThomasJ.NoelPlazaBallroomsE,F

[9:40]Session ERadiation Effects in Devices and Integrated Circuits

[2:35] Data WorkshopPlazaBallroomsB,C

[8:30] Invited TalkReflections on 47-Plus Years of NSREC HistoryEdwardE.ConradPlazaBallroomsE,F

[9:35]Session GHardness Assurance

[6:15to11:00]ConferenceSocial“A Night At The Museum”

[5:10]EndofShortCourse

[4:40]Exam(forstudentsrequestingCEUcreditonly)

[4:30]Wrap-up

[4:55]EndofSessions

[11:45]ShortCourseLuncheon,PlazaBallroomsA,D [11:50]Lunch

[9:45]Break,PlazaBallroomsA,D

[10:15]Break,PlazaExhibitArea

[6:00to10:00]IndustrialExhibitsReception6:00Cocktails7:00BuffetPlazaExhibit/Foyer

[5:30to7:00]RadiationEffectsCommitteeOpenMeeting,PlazaBallroomsE,F

[2:35] Poster SessionPlazaBallroomsB,C


[12:00]Lunch


[10:55]Session HDosimetry

[9:40]Session JHardening By Design


[12:00]Lunch

[11:45]EndofConference

[10:45]Session E (continued)

[10:45]Session J(continued)

[1:30] Session FSingle-Event Effects: Transient Characterization

[5:00]EndofSessions

[1:30]Session ISingle-Event Effects: Devices and Integrated Circuits

[5:00]EndofSessions



ContentsContents

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Chairman’s Invitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1Short Course Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2Short Course . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

CourseDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3Part1-DevelopingRadiationHardenedComplexSystem-On-ChipASICsIn CommercialUltraDeepSubmicronCMOSProcesses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4Part2-MicroprocessorsAndSRAMSForSpace:Basics,RadiationEffectsandDesign. . . . . . . . . . . . . . 5Part3-PresentAndFutureNon-VolatileMemoriesForSpace . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6Part4-ReliabilityAndQualificationOfCustomIntegratedCircuitsForHarsh EnvironmentApplicationsUsingCommercialWaferFoundries . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Technical Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8TechnicalInformation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8InvitedSpeakers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Late-NewsPapers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8Tuesday,July20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SessionA-BasicMechanismsofRadiationEffects. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SessionB-PhotonicDevicesandIntegratedCircuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 SessionC-SpaceandTerrestrialEnvironments. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 SessionD-Single-EventEffects:MechanismsandModeling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Wednesday,July21. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 InvitedTalk-Denver:Ups&DownsofAMiningTown. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 SessionE-RadiationEffectsinDevicesandIntegratedCircuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 SessionF-Single-EventEffects:TransientCharacterization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 DataWorkshop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22Thursday,July22. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 InvitedTalk-HighPowerMicrowaveSources–PresentStatusandFutureTrends . . . . . . . . . . . . 27 SessionG-HardnessAssurance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 SessionH-Dosimetry. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 SessionI-Single-EventEffects:DevicesandIntegratedCircuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 PosterSession. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33Friday,July23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 InvitedTalk-Reflectionson47-PlusYearsofNSRECHistory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 SessionJ-HardeningByDesign. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

RESG NEWS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38Awards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

2009NSRECAwards. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 422010RadiationEffectsAward. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Conference Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43RoomsforSideMeetings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43Messages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43ContinentalBreakfastandCoffeeBreaks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43BusinessCenter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43

Registration and Travel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44ConferenceRegistration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44On-SiteRegistrationHours. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44ConferenceCancellationPolicy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44HotelReservationsandInformation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45AirportandTransportationInformation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Industrial Exhibits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 482009 IEEE NSREC Technical Sessions and Short Course Registration Form . . . . . . . . . . . . . . 512009 IEEE NSREC Activities Registration Form . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53Social Program . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

IndustrialExhibitsReception. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57“ANightAtTheMuseum”-ConferenceSocial . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

Local Activities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59WeatherandClothing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61

2010 Conference Committee . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62Official Reviewers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63Radiation Effects Steering Group . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 642011 Announcement and First Call for Papers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65

Section HeadingSection Heading

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Chairman’s InvitationChairman’s Invitation

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On behalf of the IEEE, NPSS and Radiation Effects Steering Committee, it is my privilege to invite you to attend the 47th Annual International Nuclear and Space Radiation Effects Conference (NSREC) to be held July 19-23, 2010 at the Sheraton Denver Downtown Hotel in Denver, Colorado. Keeping tradition with previous NSRE Conferences, the 2010 Conference will showcase:

• An exceptional Technical Program, the foundation of the conference• A outstanding one-day Short Course preceding the Technical Program• A comprehensive Radiation Effects Data Workshop incorporated into the

Technical Program• An Industrial Exhibit, a valuable platform for numerous participating

organizations

The Technical Program Chairman, Jeffrey Black (Vanderbilt) and his program com-mittee have chosen an outstanding set of contributed papers, organized into oral and poster presentations for the Technical Sessions. High-quality data papers were selected for poster presentation in the Radiation Effects Data Workshop. Invited talks will be presented that are intended for a more general audience and are open to attendees and their guests.

This year’s Short Course theme, Custom Integrated Circuits and Memories: Basic Mechanisms, Design and Qualification, is organized by Ronald Lacoe (The Aerospace Corporation). The Short Course will be presented on Monday, July 19 with a focus on the design and qualification of integrated circuits and memories for space systems using commercial processes.

The Industrial Exhibit, organized by Kirby Kruckmeyer (National Semiconductor) opens Tuesday morning, is extended through the evening with a reception and con-tinues through lunch on Wednesday. The exhibit offers cutting-edge information on radiation-resistant electronics, test equipment and facilities, hardware, and software simulation products and services.

The Sheraton Hotel, which offers impressive views of the Rocky Mountains and Denver cityscape, is conveniently located on the 16th Street Pedestrian Mall, where shopping, dining and entertainment stretch for 16 blocks in the heart of downtown Denver. A free shuttle offers complimentary service, stopping at every intersection and transporting shoppers to more than a mile of Denver’s greatest attractions. The Sheraton is within walking distance of the Denver Art Museum, the United States Mint, and just minutes from Coors Field and historic LoDo (Lower Downtown). The Local Arrangements Chairman, Hugh Barnaby (Arizona State University), assisted by Cat Brant (University of Colorado, LASP), has planned for attendees and guests an assortment of social events to be remembered for years to come. The pinnacle of the social program will be held at the Denver Museum of Nature and Science, which is open exclusively to conference attendees and guests on the evening of July 21.

Your 2010 Conference Committee has chosen a premier location for our annual inter-national gathering in the finest accommodations of the Mile High City where “shop talk” will range from radiation effects to the high couture just outside the hotel doors. We look forward to seeing you there!

“On behalf of the 2010 Nuclear and Space Radiation Effects Conference Committee it is my great pleasure to invite you to Denver, Colorado for this year’s meeting. The conference committee has assembled an exceptional technical conference in a terrific venue. I look forward to seeing you there!”

Joe BenedettoNSREC 2010 General Chairman

Visit us on the web at:www .nsrec .com

Short Course ProgramShort Course Program

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REGISTRATION/CONTINENTAL BREAKFAST(PLAZA BALLROOMS A, D)

SHORT COURSE INTRODUCTIONRonald Lacoe The Aerospace Corporation

PART 1 – DEVELOPING RADIATION-HARDENED COMPLEX SYSTEM-ON-CHIP ASICS IN COMMERCIAL ULTRA DEEP SUBMICRON CMOS PROCESSESJeremy Popp Boeing Research and Technology (BR&T)

BREAK (PLAZA BALLROOMS A, D)

PART 2 – MICROPROCESSORS AND SRAMS FOR SPACE: BASICS, RADIATION EFFECTS AND DESIGN Lawrence T. Clark Arizona State University

SHORT COURSE LUNCHEON (PLAZA BALLROOMS A, D)

PART 3 – PRESENT AND FUTURE NON-VOLATILE MEMORIES FOR SPACESimone Gerardin and Alessandro Paccagnella University of Padova

BREAK (PLAZA BALLROOMS A, D)

PART 4 – RELIABILITY AND QUALIFICATION OF CUSTOM INTEGRATED CIRCUITS FOR HARSH ENVIRONMENT APPLICATIONS USING COMMERCIAL WAFER FOUNDRIESDavid Kerwin Aeroflex Colorado Springs

WRAP-UP

EXAM (only for students requesting CEU credit)

END OF SHORT COURSE

7:30AM

8:00AM

8:15AM

9:45AM

10:15AM

11:45AM

1:00PM

2:30PM

3:00PM

4:30PM

4:40PM

5:10PM

CUSTOM INTEGRATED CIRCUITS AND MEMORIES: BASIC MECHANISMS, DESIGN AND QUALIFICATION

PLAZA BALLROOMS E, F – MONDAY, JULY 19

Each attendee will receive a CD-ROM archive of IEEE NSREC Short Course Notebooks (1980-2010).

Short CourseShort Course

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COURSE DESCRIPTION

CONTINUING EDUCATION

UNITS (CEUS)

SHORT COURSE CHAIRMAN

A one-day Short Course “Custom Integrated Circuits and Memories: Basic Mechanisms, Design and Qualification” will be presented at the 2010 Nuclear and Space Radiation Effects Conference (NSREC). With the trend towards increased intrinsic total dose hardness in advanced commercial CMOS processes and the development of hardness-by-design techniques to further mitigate radiation effects as required, many space programs are looking at exploiting commercial CMOS pro-cesses for the development of radiation-hardened components for space. The 2010 Short Course will focus on the design and qualification of integrated circuits and memories for space systems.

The Short Course is organized into four sessions starting with a course on developing radiation-hardened system on chip ASICs in advanced commercial CMOS technolo-gies. The second session focuses on microprocessors and static memories for space, while the third session focuses on non-volatile memories for space. The last session discusses assuring reliability and qualification of CMOS components fabricated at commercial CMOS foundries. The speakers for the 2010 Short Course are all experts in their respective areas. They will present the knowledge base in their topical areas with an emphasis on making complex issues understandable to the non-experts, as well as the experts in the field.

The course is applicable to designers, radiation effects engineers, component special-ists, and other technical and management personnel who are involved in developing reliable systems designed to operate in space environments. This course provides a unique opportunity for NSREC attendees to benefit from the expertise of the instruc-tors, as well as the in-depth coverage and application-oriented perspective provided by the short course format. The instructors will develop the core content of their respective topics from background material largely found in the literature and from their unique interactions with actual space systems. As such, the course will benefit both new and experienced engineers, scientists, and managers. In-depth notes will be provided at registration.

For those interested in Continuing Education Units (CEUs), there will be an open-book test at the end of the course. The course is valued at 0.6 CEUs and is endorsed by the IEEE and the International Association for Continuing Education and Training (IACET).

Each attendee will receive a complimentary CD-ROM that contains an archive of IEEE Nuclear and Space Radiation Effects Conference (NSREC) Short Course Notebooks (1980-2010) . This collection covers 31 years of one-day tutorial courses, presented yearly at NSREC . It serves as a valuable reference for stu-dents, engineers, and scientists .

Ronald Lacoe received his B.S., M.S., and Ph.D. in Physics from the University of California, Los Angeles in 1974, 1977, and 1983, respectively. He attended graduate school as a Hughes Aircraft Fellow and worked at the Hughes Research Laboratory in Malibu, California while earning his Ph.D. degree. After receiving his Ph.D., Dr. Lacoe was a joint NSF/CNRS Fellow at the University of Paris-South from 1984-1986, where he worked on reduced-dimensional systems and organic superconductivity. Dr. Lacoe joined The Aerospace Corporation in 1987 as Member of the Technical Staff and is currently a Senior Scientist in the Microelectronics Technology Department, Physical Science Laboratory. Dr. Lacoe has been a pioneer in the development of hardness-by-design methodology as an approach to assuring the supply of high-performance radiation-hardened advanced CMOS components for space missions. In addition, he is also an expert in microelectronic reliability issues for CMOS technologies. He has been responsible for research in the areas of microelectronics reliability and radiation hardness for microelectronics that will be employed in Air Force space programs. Dr. Lacoe has published over one hundred twenty papers, and was the recipient of the 1997 IEEE International Reliability Physics Symposium’s Best Paper Award, the 1997 NSREC Meritorious Paper Award and the 1998 NSREC Outstanding Paper Award.

Ronald LacoeShort Course Chairman

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Smaller HeadingSmaller Heading

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Short Course MondayShort Course Monday

Jeremy Popp will discuss radiation effects in commercial ultra deep submicron CMOS technologies, and tools and techniques to solve challenges faced by designers devel-oping complex radiation hardened System on Chip (SoC) designs in these processes. Ongoing research in cutting edge deep submicron CMOS technologies, particularly the 45 nm SOI CMOS node, show significant promise for providing revolutionary improvements in system performance and capabilities while achieving space system radiation hardness requirements. A survey of Total Ionizing Dose and Single Event Effects radiation measurement results will be provided at 90 nm, 65 nm, and 45 nm CMOS technology nodes. Radiation Hardened by Design methodologies (RHBD) cov-ering analysis, simulation, and implementation of complex digital and analog mixed signal circuits will also be presented. This will be followed by a discussion of the challenges and approaches to the radiation testing of complex SoC designs.

Commercial Ultra Deep Submicron Processes

Radiation Hardness Evaluation■ 90 nm and Below • TID Hardness of Device Options • Representative Heavy Ion and Proton SEU Cross Sections, SET Pulse

Generation Rates

Radiation Hardness by Design Techniques■ TID – Layout and Design ■ SEE – SEU, SET, SEFI Mitigation

Design Methodologies for Large Scale Digital ASIC’s■ Architecture Options (Memory, Control, Processing)■ Clock Distribution Hardening■ Data Path Versus Control Path Options■ EDA Tools Analysis and Design Support

Design Methodologies for Complex Mixed Signal Circuits■ Mitigating TID/SEU/SET Effects in Analog/Mixed Signal Circuits■ EDA Tools Analysis■ Design Examples

Testing Radiation Performance of Complex ASICs■ Facilities for Radiation Testing■ Addressing Test Plans and Technical Challenges■ Test Case of Complex Circuit TID and SEE Testing

Summary

DEVELOPING RADIATION HARDENED COMPLEX SYSTEM-ON-CHIP ASICS IN COMMERCIAL ULTRA DEEP SUBMICRON CMOS PROCESSESJeremy PoppBoeing Research and Technology (BR&T)

Jeremy D. Popp obtained his BSEE degree from Portland State University, and MEng from UC San Diego. He is cur-rently pursuing his Ph.D. at University of Washington in Electrical Engineering. Jeremy is currently the Mixed Signal ASIC Design Leader at the Boeing Company’s Solid State Electronics Development group and manages the research and development of high speed PLL’s and SerDes products for space-based applica-tions. Previously, he was a Senior Member of Technical Staff and Lead Circuit Designer at Orora Design Technologies, where he led Orora’s PLL IP develop-ment in DSM CMOS. He also worked as a program technical leader for the US Navy where he successfully lead several high profile defense electronic system design and advanced technol-ogy programs. Jeremy has twelve technical publications, currently holds three patents with several pending, and has received several awards for his exceptional techni-cal accomplishments.

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Lawrence T. Clark will present a tutorial overview of micro-architecture and circuits for microprocessors at a basic introductory level intended for non-designers. Basic cir-cuit concepts and timing issues will be introduced using examples in the context of a simple embedded microprocessor pipeline. This introduction will lead to an overview of SEE hardening approaches and their impact on design at the micro-architecture (processor pipeline), circuit, and layout level. Since embedded static random access memory (SRAM) comprises up to 90% of the transistors in a microprocessor, an intro-duction to basic SRAM and embedded memory block design will follow, including TID hardening issues. Recent trends towards increased multi-bit upset susceptibility of SRAMs fabricated in advanced CMOS processes will be discussed. Basic memory error detection and correction will then be covered in the context of embedded pro-cessor memories. The discussions will be example based and use the simple embed-ded processor pipeline for perspective throughout.

MICROPROCESSORS AND SRAMS FOR SPACE: BASICS, RADIATION EFFECTS AND DESIGNLawrence T. ClarkArizona State University

Lawrence T. Clark received the B.S. degree in computer sci-ence from Northern Arizona University, in 1984, and the M.S. and Ph.D. degrees in electri-cal engineering from Arizona State University, in 1987 and 1992, respectively. He worked at Intel in 1982 and from 1984 to 1985, and at VLSI Inc. from 1990 to 1992 performing chipset design. From 1992 to 2003, he worked at Intel in various capaci-ties including microprocessor design (participating in Pentium, Itanium, and XScale processor designs) compact modeling for circuit simulation, and CMOS imager design. Most recently, he was a Principal Engineer and Circuit Design Manager for the XScale Microprocessors for which he received an Intel Achievement Award. In 2003, he joined the Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, as an Associate Professor. In 2004, Prof. Clark joined the Department of Electrical Engineering at Arizona State University. He has been awarded over 65 patents with approximately 15 pending and has coauthored over 75 peer-reviewed journal and conference articles. Prof. Clark is an associate editor of IEEE TCAS-II and has twice been a guest editor for IEEE Journal of Solid-state Circuits. His research interests are circuits, architectures, and computer-aided design for high-performance and low-power VLSI systems, radia-tion effects and their mitigation in VLSI systems, and electronics on flexible substrates.

Introductory Microprocessor Architecture

■ Performance Metrics■ Speedup and Amdahl’s Law■ A Simple Processor Pipeline■ Pipeline Hazards■ Cache Structure and Operation■ Architectural Versus

Speculative State

Sequential Circuits■ Basic Timing and Key Metrics■ Latch and Flip-flop Basics■ Pipeline Timing—Divide and

Conquer■ Clocking and Processor Speed

Register File Design■ Circuit Architecture■ Memory Timing

SRAM Design■ Circuit Architecture■ Timing and How SRAM Fits in

the Pipeline■ SRAM Variability in Deep

Submicron Technologies■ SRAM Cell Stability and

Margins■ Sense Amplifiers

Logic Radiation Effects and Mitigation■ Overview■ Mitigation by Process and

Design■ Impact of SEE Mitigation on

Circuit Timing■ Mitigation Impact on Area and

Power

SRAM Radiation Effects and Mitigation

■ Mitigation by Process and Design

■ TID Mitigation for SRAM Cells■ Mitigation Impact on Area and

Power■ SETs in SRAM Periphery

Circuits■ Multi-bit Upsets■ Error Detection and Correction

SEE Mitigation Processor Pipeline Impact

■ Power and Performance Tradeoffs

Summary■ Looking Forward to Future

Technologies

6


Simone Gerardin and Alessandro Paccagnella will discuss non-volatile memories (NVMs) for space applications. This talk will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts (floating gate, charge trap, phase change, ferroelectricity, magnetoresistance, nano-tubes, etc.), with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues. The focus will be not only on technologies and devices aimed at the mainstream commercial markets, which, in spite of their issues with ionizing radiation, are very attractive for space designers due to their large size, but also on small-capac-ity rad-hard devices. A comprehensive discussion of total dose and single event effects results for this wide cross section of NVMs will be presented.

Overview and Basics■ Endurance and Retention■ Non-Volatile Storage Concepts ■ Array Architecture and Peripheral Circuitry■ Commercial Market Versus Space Market

Charge-based Technologies■ Floating Gate Architecture■ Array Organization■ Peripheral Circuitry■ Radiation Effects■ Scaling■ Nanocrystal Cells■ Charge-Trap Cells

Phase Change Memories■ Chalcogenide Materials■ Reliability And Radiation Effects

Ferroelectric Memories■ Remnant Polarization■ Reliability And Radiation Effects

Magnetoresistive Memories■ Principles Of Operation■ Reliability And Radiation Effects

Comparison and Prospects■ Universal Memory?

Future Technologies■ Carbon Nanotube Memories■ Resistive Random Access Memories■ Miscellaneous

Conclusions

PRESENT AND FUTURE NON-VOLATILE MEMORIES FOR SPACESimone Gerardin and Alessandro Paccagnella University of Padova

Alessandro Paccagnella got the Laurea degree in Physics (cum Laude) in 1983 from the University of Padova, Italy. He is now Full Professor of Electronics and Director of the Department of Information Engineering at the University of Padova. He is the author of more than 300 scientific papers, and about 200 of them have been pub-lished on international journals. In the past, his research activity has been directed to the study of differ-ent aspects of physics, technology, and reliabil-ity of semiconductor devices. At present, he coordinates the activ-ity of a research group focused on the study of ultra-thin gate dielec-trics in MOS devices and on Total Ionizing Dose and Single Event Effects induced by ionizing radiation on integrated circuits, with emphasis on non-volatile memories and programmable logic devices. He has co-authored works, which received Awards at the conferences ESREF 92, ESREF 98, NSREC 1999, ESSDERC 2000, RADECS 2007, NSREC 2008 and RADECS 2008.

Simone Gerardin received the Laurea degree (cum laude) in Electronics Engineering in 2003, and a Ph.D. in Electronics and Telecommunications Engineering in 2007, both from the University of Padova, Italy. He is currently a research assistant at the same univer-sity. His research is focused on soft and hard errors induced by ionizing radiation in advanced CMOS technologies, and on their interplay with device aging and ESD. Simone has authored or co-authored more than 35 papers published in international journals and more than 50 con-ference presentations, three of which won awards at RADECS 2007, NSREC 2008, and RADECS 2008. In 2005 he received the Phelps Continuing Education Grant from the IEEE Nuclear and Plasma Sciences Society. Simone has been a short course instructor for RADECS 2009.

7


RELIABILITY AND QUALIFICATION OF CUSTOM INTEGRATED CIRCUITS FOR HARSH ENVIRONMENT APPLICATIONS USING COMMERCIAL WAFER FOUNDRIESDavid KerwinAeroflex Colorado Springs

David Kerwin received a B.S. in Chemistry from the University of Notre Dame in 1979, an M.S. in Physics from Colorado State University (CSU) in 1985, and performed Ph.D. research at CSU in the area of “Radiation-Induced, Paramagnetic Defects in amorphous Silicon Dioxide.” He has been with Aeroflex Colorado Springs (formerly UTMC) since 1984, where he has held various technical and management posi-tions, and is currently the Director of Mixed-Signal Products, a team designing full-custom integrated circuits that interface to sensors used in harsh environments. He has worked with commer-cial wafer foundries for high-reliability microelectronics for the past 14 years. He has earned American Society for Quality (ASQ) certifications in Reliability Engineering, Quality Engineering, and Quality Auditing. He has authored over 20 technical articles in publications such as Physical Review Letters, Physical Review B, Journal of Applied Physics, and IEEE Radiation Effects Data Workshop. He has been awarded seven patents in the areas of radiation hardening of CMOS processes and x-ray detectors.

David Kerwin will present a reliability program plan for producing high reliability microelectronics for harsh environments such as space, medical, and nuclear power generation applications. A tutorial on reliability statistics will be given followed by a review of the major physics of failure mechanisms for integrated circuits and pack-ages. A program plan will be presented that considers the entire life cycle (bath-tub curve) of a component. The plan focuses on designing-in and building-in the reliabil-ity based upon a detailed reliability assessment of the proposed IC as implemented in a commercial wafer foundry technology. The reliability assessment drives informa-tion needed from the foundry before detailed design activities commences. SET/SEU grading of each digital and analog cell in the design allows for error rate to be opti-mized. The relationship between yield and reliability in terms of optimizing screening methods and monitoring the results of the reliability program plan, including qualifi-cation testing, in terms of MIL-PRF-38535 will be discussed. In addition, approaches for qualifying components with respect to radiation effects, including total-ionizing-dose and single-event testing, will be reviewed. A case study of a foundry-portable, radiation-hardened, one-time electrically programmable metal fuse, which demon-strates how the methodology can be used to achieve extremely high reliability by design, concludes the presentation.

Introduction To Reliability■ Definition of Reliability■ Probability Distributions■ Reliability Equations■ The Bathtub Curve■ System Reliability

Planning For Reliability■ The Reliability “Plan-Do-Check-

Act” Cycle■ Reliability Program Plan

Designing-In Reliability■ Reliability Model for an

Integrated Circuit■ Physics of Failure: Intrinsic

Failure Mechanisms■ Physics of Failure: Extrinsic

Failure Mechanisms■ Hermetic Package Reliability■ Reliability Assessment based

upon Foundry Data

Building-In Reliability■ Intrinsic Versus Extrinsic

Reliability■ Process Controls and SPC■ Testing and Fault Coverage■ Yield and Reliability■ Value-Added Screening

Monitoring Reliability■ Qualification and Hardness

Assurance Testing■ Periodic Reliability Testing■ Long Term Reliability Testing

Improving Reliability■ Failure Analysis■ Corrective Action System■ Continuous Process

Improvement

Summary

Technical ProgramTechnical Program

8

TECHNICAL INFORMATION

The NSREC technical program will consist of contributed oral, poster papers, a data work shop and three invited papers. The oral presentations will be 12 minutes in duration with an additional 3 minutes for questions. The technical sessions and chairpersons are:

■ Basic Mechanisms of Radiation EffectsChair: Alessandro Paccagnella, University of Padova

■ Photonic Devices and Integrated CircuitsChair: Sylvain Girard, CEA/DIF

■ Space and Terrestrial EnvironmentsChair: Justin Likar, Lockheed Martin Space Systems

■ Single-Event Effects: Mechanisms and ModelingChair: Mike Xapsos, NASA GSFC

■ Radiation Effects in Devices and Integrated CircuitsChair: Philippe Adell, JPL

■ Single-Event Effects: Transient CharacterizationChair: Pascale Gouker, MIT-LL

■ Hardness AssuranceChair: Stephen Buchner, Global Strategies Group

■ DosimetryChair: Ewart Blackmore, TRIUMF

■ Single-Event Effects: Devices and Integrated CircuitsChair: William Robinson, Vanderbilt University

■ Hardening By DesignChair: AJ Kleinosowski, Boeing

“Thank you to the authors, reviewers, and session chair for their participation in putting together a great NSREC technical program for this year. I invite you all to come share it with me in Denver.”

Jeffrey Black, Vanderbilt University, Technical Program Chairman

POSTER SESSION

RADIATION EFFECTS DATA WORKSHOP

INVITED SPEAKERS

LATE-NEWS PAPERS

Those papers that can be presented more effectively in a visual format with group discussion will be displayed in the Poster Session on Tuesday through Friday in the Plaza Ballrooms B, C. The formal Poster Session will be held on Thursday from 2:35 to 5:00 PM and the authors will be available at that time to discuss their work. The Poster Session is chaired by Véronique Ferlet-Cavrois of ESA/ESTEC.

Workshop papers provide piece part and materials radiation response data and radia-tion test facilities technical information. The intent of the workshop is to provide data and facilities information to support design and radiation testing activities. Workshop papers can be viewed Tuesday afternoon through Friday morning in the Plaza Ballrooms B, C. Authors will be available on Wednesday to discuss their work from 2:35 to 5:00 PM. A workshop record will be mailed to all registered conference attend-ees. The workshop chair is Leif Scheick, JPL.

There will be three invited talks:■ Denver: Ups & Downs of A Mining Town

Thomas J. Noel, Professor of History, University of Colorado Denver■ High Power Microwave Sources – Present Status and Future Trends

Edl Schamiloglu, University of New Mexico■ Reflections on 47-Plus Years of NSREC History

Edward E. Conrad

A limited number of late news papers will be accepted and included in the Poster Session and the Radiation Effects Data Workshop. The deadline for submission is June 4, 2010. Detailed instructions for submitting a late-news summary are available on the NSREC Website at www.nsrec.com.

9

Technical Program TuesdayTechnical Program Tuesday

PLAZABALLROOMSE,F8:30AM

8:35AM

9:05AM

SESSION A9:10AM

A-19:15AM

A-29:30AM

A-39:45AM

A-410:00AM

OPENING REMARKSJoseph Benedetto, Radiation Assured Devices, General Chairman

AWARDS PRESENTATIONDan Fleetwood, Vanderbilt University, Radiation Effects Steering Group Committee

TECHNICAL SESSION OPENING REMARKSJeffrey Black, Vanderbilt University, Technical Program Chairman

BASIC MECHANISMS OF RADIATION EFFECTSSESSIONINTRODUCTIONChair: Alessandro Paccagnella, University of Padova

Radiation Effects in Carbon-Based Electronic Materials C. D. Cress, J. T. Robinson, F. K. Perkins, U.S. Naval Research Laboratory

Total ionizing dose (TID) effects are investigated in single walled carbon nanotube and graphene field effect transistors. Device degradation and threshold voltage / Dirac point shifts with TID are discussed.

Velocity Effect on Heavy Ion-Induced Gate Oxide Latent Defects A. D. Touboul, M. Portier, R. Arinero, F. Saigne, F. Wrobel, C. Guasch, J. Boch, Universite Montpellier II; G. Chaumont, STMicroelectronics; F. Miller, EADS France; R. D. Schrimpf, Vanderbilt University; E. Lorfevre, CNES

Thanks to atomic force microscope observation of swift heavy ion-induced structural modifications, we show that gate oxide latent defects creation depends on the ion velocity regime for a given LET value.

Hydrogen Cracking by Dangling-Bond Defects and O Vacancies in SiO2 B. R. Tuttle, S. T. Pantelides, D. R. Hughart, R. D. Schrimpf, D. M. Fleetwood, Vanderbilt University

Though the role of protons released by irradiation in MOSFETs is well understood, the cracking and role of H2 molecules remain elusive. We report detailed calculations on cracking of H2 by common defects in SiO2.

Total Dose Effects on the Memory Window of Irradiated Capacitor-Less MSDRAM Cells F. El Mamouni, E. X. Zhang, R. D. Schrimpf, D. M. Fleetwood, Vanderbilt University; M. Bawedin, S. Cristoloveanu, MINATEC

The impact of total ionizing dose is evaluated on the memory window of irradiated capacitor-less MSDRAMs. The memory window shifts toward more negative voltages and becomes smaller at higher doses

10


POSTER PAPERSPA-1

PA-2

PA-3

PA-4

10:15–10:45AMPLAZAEXHIBITAREA

Process Dependence of Proton-Induced Degradation in GaN/AlGaN HEMTs T. Roy, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, Vanderbilt University; D. F. Brown, U. K. Mishra, University of California

Compared to N-rich and NH3-rich growth, Ga-rich HEMTs degrade less for 1.8-MeV proton irradiation at ~ 5x1014/cm2. Post-irradiation 1/f noise measurements show bulk trap densities up to 3x1011/cm2.

Total-Dose-Irradiation and Annealing Responses of Ge-pMOSFETs C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, K. F. Galloway, Vanderbilt University; E. Simoen, J. Mitard, C. Claeys, IMEC

The irradiation and annealing responses of Ge-pMOSFETs have been investigated as a function of device processing. Interface trap densities and body leakage increase with dose and decrease with annealing.

Mechanisms of Noise Degradation in Low Power 65 nm CMOS Transistors Exposed to Ionizing Radiation V. Re, M. Manghisoni, G. Traversi, University of Bergamo; L. Gaioni, L. Ratti, University of Pavia

Experimental data provide insight into the mechanisms governing the impact of gate and lateral isolation dielectrics and of scaling-related technological advances on noise and its sensitivity to TID effects in 65 nm CMOS devices.

Contribution to the Modeling of the Radiation-Induced Electromotive Force (RIEMF) in Coaxial Cables by 14 MeV Neutron of Inertial Fusion Experiment J.-L. Leray, J.-L. Bourgade, S. Bazzoli, J. Gazave, F. Lubrano-Lavaderci, J.-E. Sauvestre, CEA

Current is generated by neutrons in coaxial cables during inertial fusion experiments by nuclear recoil move in the dielectrics. This is simulated with GEANT4. An analytical model is proposed based on the cable curvature radius.

BREAK

11


SESSION B10:45AM

B-110:50AM

B-211:05AM

B-311:20AM

B-411:35AM

POSTER PAPERSPB-1

PHOTONIC DEVICES AND INTEGRATED CIRCUITSSESSIONINTRODUCTIONChair: Sylvain Girard, CEA/DIF

Particle-Induced Single Event Latchup in a Cryogenic CMOS Readout Integrated Circuit C. J. Marshall, R. L. Ladbury, J. A. Pellish, R. D. Foltz, D. M. Kahle, K. A. LaBel, NASA GSFC; P. W. Marshall, Consultant with NASA GSFC; A. Waczynski, N. Boehm, Global Science and Technology, Inc.; N. A. Dodds, R. A. Reed, Vanderbilt University; R. Arora, J. D. Cressler, Georgia Institute of Technology

Heavy ion induced single event latchup is observed in a commercial CMOS readout integrated circuit operating at both 20K and 32K. Shallow-level impact ionization is discussed as a source of carriers to trigger latchup.

Analysis of Total Dose Induced Dark Current in CMOS Image Sensors from Interface State and Trapped Charge Density Measurements V. Goiffon, C. Virmontois, P. Magnan, Image Sensor Lab.; S. Girard, P. Paillet, CEA

The origin of total dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements in 10 keV X-ray irradiated devices.

Proton Irradiation of InGaAs/InP Geiger-Mode Avalanche Photodiodes R. D. Harris, W. H. Farr, H. N. Becker, JPL

Degradation of InP-based Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Changes in the dark I-V characteristics and increases in dark count rate are observed after irradiation.

Application of CL/EBIC-SEM Techniques for Characterization of Radiation Effects in Multijunction Solar Cells S. I. Maximenko, M. Gonzalez, Global Defense Technology & Systems; S. R. Messenger, C. D. Cress, J. A. Freitas, R. J. Walters, U.S. Naval Research Laboratory

Electron beam induced current (EBIC) and cathodoluminescence (CL) measurement techniques are shown to be very useful in the characterization of radiation effects in monolithically-grown InGaP2/GaAs/Ge multijunction solar cells used in space.

Displacement Damage Effect Due to Proton and Neutron Irradiations on CMOS Image Sensor Manufactured in Deep Sub-Micron Technology C. Virmontois, V. Goiffon, P. Magnan, ISAE, University of Toulouse; O. Saint-pe, EADS Astrium; S. Petit, G. Rolland, CNES; S. Girard, CEA

Displacement damage effect due to proton and neutron irradiation on CMOS image sensor dedicated to imaging are presented through a comparative analysis between defects concentration and dark current behaviour in pixel arrays and isolated photodiodes.

12


PB-2

PB-3

11:50AM–1:30PM

SESSION C1:30PM

C-11:35PM

C-21:50PM

C-32:05PM

Origin of Radiation Induced Damage in Organic P3HT:PCBM Based Photocells R. A. Devine, New Mexico Institute of Mining and Technology; C. Mayberry, Air Force Research Laboratory; A. Kumar, Y. Yang, University of California

Organic P3HT:PCBM(1:1) photocells have been X irradiated. There is no effect on the recombination time up to 300 krad (SiO2). Changes in the open circuit voltage result from internal field modifications.

Theoretical Treatments of Radiation-Induced Absorption and Annealing in Multi-Component Glass N. Nickles, Ball Aerospace & Technologies Corp.

Using radiation test data on a previously untested Lanthanum flint glass, optical degradation and two theoretical treatments of annealing are discussed within the context of predicting performance on extended space missions.

LUNCH

SPACE AND TERRESTRIAL ENVIRONMENTS SESSIONINTRODUCTIONChair: Justin Likar, Lockheed Martin Space Systems

First Record of Single Event Upset on the Ground, Cray-1 Computer Memory at Los Alamos in 1976 E. Normand, EN Associates LLC and Boeing Research & Technology; J. L. Wert, Boeing Research & Technology; H. Quinn, G. Grider, P. Iwanchuk, J. Morrison, Los Alamos National Laboratory; S. Johnson, Cray Inc.

Bit flips recorded in the Cray-1 computer at Los Alamos in 1976 lead to an upset rate in the bipolar SRAMs that correlates with the SEUs being induced by the atmospheric neutrons.

Contribution of Si Bulk, Interconnects and Packaging to Soft Error Rate in 65 nm Technology M. Gedion, F. Wrobel, F. Saigné, J. Mekki, IES-RADIAC, University Montpellier II; R. Schrimpf, Vanderbilt University

The materials’ contribution to alpha particle-induced SER is evaluated on a 65 nm technology node. This evaluation is performed by Monte Carlo simulations, taking into account impurity contamination levels in the device.

Impact of the Solar Flares on the SER Temporal Variations on Micro and Nanometric Technologies in the Geostationary Orbit G. Hubert, S. Bourdarie, S. Duzellier, DESP, ONERA; R. Ecoffet, CNES

The impact induced by solar flares on the SER temporal variation is studied as a function of shielding and technological node. The contribution of the direct ionization of protons for nanometric technologies is specifically investigated.

13


C-42:20PM

POSTER PAPERSPC-1

PC-2

PC-3

PC-4

2:35–3:05PMPLAZAEXHIBITAREA

The Trapped Proton Environment in Medium Earth Orbit (MEO) G. P. Ginet, MIT Lincoln Laboratory; S. L. Huston, D. Madden, Boston College; C. J. Roth, Atmospheric and Environmental Research, Inc.; T. P. O’Brien, The Aerospace Corporation

Recent measurements of the trapped proton flux in medium Earth orbit (altitudes ~ 7,000 - 15,000 km) are reported. The spectral, spatial and temporal distribution of fluxes are discussed to include implications for spacecraft design.

Internal ElectroStatic Discharge Monitor (IESDM) W. Kim, I. Jun, M. Kokorowski, JPL

Internal ElectroStatic discharge monitor (IESDM) developed in JPL to measure the depth profile of potential in dielectrics and preliminary test results of IESDM using electron beam are presented.

Badhwar-ONeill 2010 Galactic Cosmic Ray Flux Model - Revised P. M. O’Neill, NASA JSC

The Badhwar-ONeill Galactic Cosmic Ray (GCR) model has been revised to model all balloon and satellite GCR measurements since 1951. This includes the newer 1997-2010 (ACE) measurements and spans five solar cycles.

On-Orbit Total Dose Measurements from 1998 to 2007 Using pFET Dosimeters A. L. Bogorad, J. J. Likar, R. E. Lombardi, R. Herschitz, Lockheed Martin Space Systems

An updated review of on-orbit measurements for multiple pFET dosimeters at GEO for 1998-2007 time period indicates favorable performance over range of dose rates and yields valuable information regarding model / transport tool validation.

Theoretical Correlation of Broad Spectrum Neutron Sources for Accelerated Soft Error Testing C. W. Slayman, Independent Consultant

Several broad spectrum high energy neutron source facilities exist throughout the world for accelerated soft error testing. The objective of this study is to quantify the errors introduced in accelerated soft error measurements.

BREAK

14


SESSION D3:05PM

D-13:10PM

D-23:25PM

D-33:40PM

D-43:55PM

D-54:10PM

SINGLE-EVENT EFFECTS: MECHANISMS AND MODELINGSESSIONINTRODUCTIONChair: Mike Xapsos, NASA GSFC

Impact of Delta-Rays on Single-Event Upsets in Highly-Scaled Devices M. P. King, R. A. Reed, M. H. Mendenhall, R. A. Weller, R. D. Schrimpf, M. L. Alles, Vanderbilt University

Monte Carlo simulations show that delta-rays can deposit sufficient energy to cause SEUs in nonadjacent SRAM cells separated by many micrometers. We discuss the implications of these effects on rate predictions and hardening techniques.

Contribution of Control Logic Upsets and Multi-Node Charge Collection to Flip-Flop SEU Cross-Section in 40-nm CMOS B. Narasimham, J. K. Wang, M. Buer, R. Gorti, K. Chandrasekharan, Broadcom Corporation; K. M. Warren, B. D. Sierawski, R. D. Schrimpf, R. A. Reed, R. A. Weller, Vanderbilt University

Heavy-ion measurements on 40-nm flip-flops indicate pattern dependence of cross-section resulting from local control logic node upsets. Monte Carlo simulations are used to identify impact of multi-node charge collection events.

Impact of Spacecraft Shielding on Direct Ionization Soft Error Rates J. A. Pellish, M. A. Xapsos, R. L. Ladbury, NASA GSFC; C. A. Stauffer, MEI Technologies; T. M. Jordan, EMPC; T. R. Oldham, Perot Systems Government Services

We use ray tracing software to model various levels of spacecraft shielding complexity and energy deposition pulse height analysis to study how it affects the direct ionization soft error rate of microelectronic components in space.

Probing the Nature of Intermittently Stuck Bits in Dynamic RAM Cells A. M. Chugg, A. J. Burnell, P. H. Duncan, J. Ward, J. McIntosh, MBDA UK Limited

A method is presented and demonstrated to quantify the leakage currents in Intermittently Stuck Bits (ISBs) in SDRAMs. The leakage current histories are compared with models of the displacement damage complexes believed to cause the ISBs.

Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays S. Gerardin, M. Bagatin, A. Paccagnella, University of Padova; G. Cellere, Applied Materials Baccini; A. Visconti, M. Bonanomi, Numonyx; A. Hjalmarsson, A. Prokofiev, The Svedberg Laboratory

We studied the generation of tails in the threshold voltage distributions of floating-gate arrays after heavy-ion irradiation, using both experiments and simulations. We provide new insight, especially on the cells experiencing small shifts.

15


D-64:25PM

D-74:40PM

POSTER PAPERSPD-1

PD-2

PD-3

PD-4

Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures Z. Xu, G. Niu, L. Luo, Auburn University; J. D. Cressler, Georgia Institute of Technology; M. L. Alles, R. Reed, Vanderbilt University; A. Mantooth, University of Arkansas; J. Holmes, Lynguent Inc.; P. Marshall, Consultant with NASA GSFC

This paper investigates SiGe HBT charge collection and CML circuit SEU at cryogenic temperatures. Circuit-level SEU immunity is found to be nearly temperature independent above 150 K, and improve with further cooling.

The Role of Proton Energy and Angle in Single Event Effects in Devices M. A. Clemens, N. C. Hooten, N. A. Dodds, R. A. Reed, R. A. Weller, M. H. Mendenhall, Vanderbilt University; P. E. Dodd, M. R. Shaneyfelt, J. R. Shwank, Sandia National Laboratories; E. Blackmore, TRIUMF

The presence of high-Z materials increases proton-induced SEE cross sections in high-Qcrit devices, particularly for high incident proton energies. High-LET secondary particles from proton collisions are seen to be forward directed.

Influence of the Ion Energy on the Angular Dependence of SOI Transistor Response to Heavy Ion Irradiation M. Raine, M. Gaillardin, J.-E. Sauvestre, P. Paillet, O. Duhamel, CEA; V. Ferlet-Cavrois, ESA/ESTEC; A. Bournel, IEF

Experimental results showing angular dependence for charge collection in SOI transistor under heavy ion irradiation are presented. Geant4 and Synopsys Sentaurus simulations are performed to analyze these results in terms of ion track structure effects.

Analysis of the SEU Characteristics of a 45 nm CMOS SOI SRAM M. L. Alles, D. R. Ball, T. D. Loveless, K. L. Warren, L. W. Massengill, Vanderbilt University

Simulations indicate that process variability, floating body effects, and uncertainty in energy deposition can account for the reported non-ideal small cross sections at low LETs in a commercial 45 nm SOI SRAM.

Characterization of Parasitic Bipolar Transistors in 45 nm Silicon-on-Insulator Technology L. Wissel, P. Oldiges, IBM Systems and Technology Group; D. Guo, IBM Research

Measurements of body-contacted transistors allow the diode ideality factor and bipolar gain of parasitic bipolar transistor of 45 nm SOI technology to be determined. The simulation model is then fit to match the measurements.

An Adaptive Grid Scheme for Single-Event Upset Device Simulations D. J. Cummings, H. Park, S. E. Thompson, M. E. Law, University of Florida

An adaptive grid scheme for single-event upset simulations is presented with results that show adaptive gridding can offer significant simulation time savings while preserving accuracy.

16


PD-5

PD-6

PD-7

PD-8

PD-9

4:55PM

Single Event Effect Risk Assessment for Complex Rad-Hard Devices with High-Energy Heavy Ions Degraded in Steps to Stop in the Sensitive Volume C. C. Foster, Foster Consulting Services, LLC; P. M. O’Neill, NASA JSC; K. V. Nguyen, B. H. Jones, ESCG JSC; M. Sivertz, A. Rusek, I.-H. Chiang, Brookhaven National Laboratory

A relativistic heavy ion SEE test method, which uses small thickness steps to degrade ions to stop in and near a sensitive volume embedded at an unknown depth is described and demonstrated at BNL/NSRL.

Impact of NBTI Aging on the Single Event Upset of SRAMsM. Bagatin, S. Gerardin, A. Paccagnella, University of Padova; F. Faccio, CERN

We analyze the impact of NBTI aging on the single event upset sensitivity of SRAMs. The experimental and simulation results show that the PMOS degradation does not significantly affect the heavy-ion cell sensitivity.

The Effect on SEU Rate from the Alpha-Particle Emission Energy Spectrum M. S. Gordon, D. F. Heidel, C. E. Murray, K. P. Rodbell, H. H. Tang, IBM

The emitted alpha particle energy distribution from solder bumps can show substantial surface emission which has a large impact on the modeled SEU rate and is difficult to measure directly because of small aggregate area.

Characterization of Microdose Damage Caused by Single Heavy Ions in Trench S. Kuboyama, A. Maru, N. Ikeda, T. Tamura, JAXA; T. Hirao, JAEA

It was demonstrated that anomalously large degradation observed in power MOSFETs was caused by single heavy ions. It was identified as a microdose effect and successfully characterized by several parameters extracted from experimental data.

Process and Impurity Induced Variations in the Single Event Response of AlSb/InAs HEMTs S. DasGupta, R. A. Reed, R. D. Schrimpf, V. Ramachandran, Vanderbilt University; D. McMorrow, J. Brad Boos, Naval Research Laboratory

The single event response of AlSb/InAs HEMTs is examined for different process variations. Effects of varying delta doping, channel and barrier thickness, and ionized impurities near the substrate - buffer heterointerface are explained.

ENDOFTUESDAYSESSIONS

17

Technical Program WednesdayTechnical Program Wednesday

PLAZABALLROOMSE,FINVITED TALK

8:30–9:40AM

SESSION E9:40AM

E-19:45AM

E-210:00AM

10:15AM–10:45AMPLAZAEXHIBITAREA

Denver: Ups & Downs of A Mining TownThomas J. Noel, a Professor of History and Director of Public History, Preservation & Colorado Studies at the University of Colorado Denver

Tom Noel will present a magic lantern slide show, “Denver: Ups & Downs of A Mining Town.” Born in a gold pan in 1858, Denver had experienced booms and busts related to its dependence on various riches of the earth. As of today, the Mile High City is booming. The 2010 preliminary U.S. Census found it to be the fourth fastest growing core metro area county in the country. Tom writes a Sunday history column for The Denver Post and appears regularly as “Dr. Colorado” on the Channel 9 (NBC) show Colorado & Company. His lighthearted, gorgeously illustrated talk will introduce you to the characters and places that kept Denver alive, if not thriving, during booms and bust in gold, silver, oil, coal and other Rocky Mountain resources. Tom has authored or co-authored 39 books on Colorado, including Buildings of Colorado (Oxford U. Press), The Historical Atlas of Colorado (Oklahoma U. Press), Colorado: A Liquid History & Tavern Guide (Fulcrum Pub. Co.), Denver: Mining Camp to Metropolis (Colorado U. Press), Denver: The City Beautiful & Its Architects (Historic Denver, Inc.) and his most recent book, Mile High Tourism: Denver’s Convention and Visitor History (VISIT DENVER). Tom also conducts tours of his favorite city and state for various groups, ranging from the Colorado Historical Society to the Smithsonian Institution. For more information, see his website: drcolorado.auraria.edu.

RADIATION EFFECTS IN DEVICES AND INTEGRATED CIRCUITSSESSIONINTRODUCTIONChair: Philippe Adell, JPL

Modeling of Ionizing Radiation Effects in CMOS Devices Using PSP Surface-Potential-Based Compact Model I. S. Esqueda, W. Wu, H. J. Barnaby, G. Gildenblat, Arizona State University

The incorporation of ionizing-radiation effects in CMOS devices into PSP, the industry standard surface-potential based compact model, is presented in this paper. Initial verification is shown for degraded CMOS devices I-V characteristics.

Low Dose-Rate Effects in Shallow Trench Isolation Regions A. H. Johnston, R. T. Swimm, T. F. Miyahira, JPL

Enhanced low dose-rate damage is observed in trench-isolated CMOS. The effect only occurs for biased devices. Modeling shows that damage depends on charge yield, and is likely lower for X-ray irradiation.

BREAK

18


E-310:45AM

E-411:00AM

E-511:15AM

E-611:30AM

E-711:45AM

POSTER PAPERSPE-1

Layout-Related Stress Effects on TID-Induced Leakage Current N. Rezzak, R. D. Schrimpf, M. L. Alles, E. X. Zhang, D. M. Fleetwood, Vanderbilt University; Y. A. Li, Accelicon Technologies

The TID-induced leakage current of deep submicron MOSFETs increases with increasing active-to-isolation spacing. Mechanical stress reduces impurity diffusion at the STI sidewall, affecting the TID sensitivity. Channel width dependence is also investigated.

The Effect of Duty Cycle on Cryogenic Radiation Degradation K. A. Scott, S. Demosthenes, J. Bird, T. O’Connor, Ball Aerospace & Technologies Corp.

The parametric degradation of rad-hard CMOS components is strongly affected by bias condition and small temperature fluctuations when irradiating at cryogenic temperatures. This paper evaluates the impact of duty cycle at cryogenic temperatures.

Single Event Transient Hardness of a New Complementary (npn + pnp) SiGe HBT Technology on Thick-Film SOI E. P. Wilcox, S. D. Phillips, A. Madan, J. D. Cressler, Georgia Institute of Technology; G. W. Vizkelethy, Sandia National Laboratories; P. W. Marshall, Consultant to NASA GSFC; J. A. Babcock, K. Kruckmeyer, R. Eddy, G. Cestra, B. Zhang, National Semiconductor

We report heavy-ion microbeam and total dose data for a new complementary SiGe on thick-film SOI technology. Measured waveforms from heavy-ion strikes indicate a dramatically shortened transient, while maintaining total dose robustness.

Radiation Effects on FinFET-Based ZRAMs E. X. Zhang, Vanderbilt University and Shanghai University of Engineering Science, D. M. Fleetwood F. E. Mamouni, M. L. Alles, R. D. Schrimpf, Vanderbilt University; W. Xiong, Texas Instruments; S. Cristoloveanu, IMEP

We report the total-dose response of FinFETs operated in ZRAM mode. Radiation response and scaling trends are better for devices programmed via GIDL than back-gate pulses. Operation at >1 Mrad(SiO2) is demonstrated.

A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors E. R. Keiter, T. V. Russo, C. E. Hembree, K. E. Kambour, Sandia National Laboratories

To simulate effects of neutron-induced damage on bipolar circuit performance, a new compact model has been developed using a physics-based approach. The model compares well to experiment, for all modes of bipolar operation.

Enhanced Photocurrent Annealing in a Combined Ion and Electron Irradiation E. Bielejec, J. A. Knapp, G. Vizkelethy, J. K. McDonald, K. M. Horn, Sandia National Laboratories

We report on enhanced photocurrent annealing in Si BJTs under combined ion (displacement damage) and electron (ionization) irradiations. This effect is critically important when combined environments is an issue.

19


PE-2

PE-3

PE-4

PE-5

PE-6

Total Ionizing Dose Radiation Effects in a Commercial 45 nm Partially Depleted Silicon-on-Insulator Technology J. J. Sochacki, H. J. Barnaby, Arizona State University

Atypical total dose effects in a commercial 45 nm partially depleted (PD) SOI process are presented. Experiments and simulations are used to deduce physical radiation mechanisms.

The Cobalt-60 Radiation Damage Effect on Avalanche Photodiode for Space Electron Measurements K. Ogasawara, S. A. Livi, M. I. Desai, J. P. Hageman, D. J. McComas, Southwest Research Institute

The ionizing radiation damage effect on avalanche photodiode was investigated using cobalt-60 assuming spacecraft measurements of 10s-keV electrons. The gain decreased by 10% after 1 Mrad dose with 30% deterioration of energy resolution.

New Analytic 1D pn Junction Diode Photocurrent Solutions Following Ionizing Radiation and Including Time-Dependent Changes in the Carrier Lifetime from a Non-Concurrent Neutron Pulse C. L. Axness, E. R. Keiter, Sandia National Laboratories; B. Kerr, New Mexico Inst. of Mining and Technology

A new transient analytic excess carrier density and photocurrent solution for an irradiated 1D abrupt junction diode, taking into account a time-dependent change in carrier lifetime due to neutron irradiation is presented with examples.

Combined Effects of Electromagnetic Interference (EMI) and Ionizing Radiation on Digital Inverters J. C. Petrosky, N. A. Estep, Y. C. Kim, J. W. McClory, A. J. Terzouli, Air Force Institute of Technology

Two CMOS inverter technologies were analyzed for their static performance response to combined electromagnetic interference (EMI) and gamma radiation. Parameters such as gain, leakage currents, and logical balance were most affected. The EMI impacted the annealing response after irradiation.

Radiation Studies of Power LDMOS Devices for High Energy Physics Applications S. Diez, M. Ullan, M. Ruat, P. Fernandez-Martinez, A. Villamor, G. Pellegrini, M. Lozano, Instituto de Microelectronica de Barcelona; R. Sorge, D. Knoll, Innovation for High Performance Microelectronics

We report on radiation hardness studies performed on Lateral DMOS devices from innovation for high performance (IHP). Experiments and simulations show degradation of the device performance; but only beyond 1e15 neq/cm2.

20


PE-7

PE-8

12:00–1:30PM

SESSION F1:30PM

F-11:35PM

F-21:50PM

F-32:05PM

Effects of Scaling in SEE and TID Response of High Density NAND Flash Memories F. Irom, D. N. Nguyen, M. L. Underwood, JPL; A. Virtanen, University of Jyväskylä

Heavy ion single-event effect (SEE) measurements and total ionizing dose (TID) response for Micron Technology 32Gb commercial NAND flash memory are reported. Scaling effects in SEE and TID response is discussed.

TID Testing of TiO2 Memristor-Based Non-Volatile-Memory Devices W. M. Tong, Hewlett-Packard Laboratories and TransEL Corp.; J. J. Yang, P. J. Kuekes, D. R. Stewart, R. S. Williams, Hewlett-Packard Laboratories; E. DeIonno, E. E. King, S. C. Witczak, M. D. Looper, J. V. Osborn, The Aerospace Corp.

We exposed memristive TiO2 devices to 45Mrad(Si) of ~1MeV gamma-radiation and 23Mrad(Si) of 941-MeV Bi-ions, and saw no degradation. These results indicate they are good candidates for radiation-hard electronics.

LUNCH

SINGLE-EVENT EFFECTS: TRANSIENT CHARACTERIZATIONSESSIONINTRODUCTIONChair: Pascale Gouker, MIT-LL

Scaling Trends in SET Pulse Widths in Sub-100 nm Bulk CMOS Processes M. J. Gadlage, J. R. Ahlbin, B. L. Bhuva, L. W. Massengill, R. A. Reed, R. D. Schrimpf, Vanderbilt University; G. Vizkelethy, Sandia National Laboratories

Digital single event transient measurements in a bulk 65-nm process are presented. The measured transients are compared to transients measured in older technologies. Trends affecting SET pulse widths as feature sizes scale are discussed.

Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs M. Turowski, A. Raman, CFD Research Corporation; J. A. Pellish, NASA GSFC; K. A. Moen, J. D. Cressler, Georgia Institute of Technology; R. A. Reed, Vanderbilt University

Comprehensive 3D mixed-mode simulations, including modeling of external circuit and parasitic elements in experimental setup, allow accurate prediction of measured single-event transients in SiGe HBTs, and facilitate improved understanding and potential mitigation options.

An Investigation of Single Event Transients in Complementary SiGe BiCMOS Resonant Tank Oscillators S. J. Horst, S. D. Phillips, P. Saha, J. D. Cressler, D. McMorrow, Georgia Institute of Technology; Naval Research Laboratory; P. Marshall, Consultant to NASA GSFC; H. Gustat, B. Heinemann, G. G. Fischer, D. Knoll, B. Tillack, IHP Microelectronics

A model for estimating SET in resonant tank oscillators is developed/applied to npn- and pnp-based SiGe oscillators. A circuit topology dependent damage mechanism is also explored. Implications for space-based synthesizers are discussed.

21


F-42:20PM

POSTER PAPERSPF-1

PF-2

PF-3

PF-4

Novel Energy-Dependent Effects Revealed in GeV Heavy-Ion-Induced Transient Measurements of Antimony-Based III-V HEMTs D. McMorrow, J. Warner, J. B. Boos, S. Buchner, Naval Research Laboratory; S. DasGupta, V. Ramachandran, R. Reed, R. Schrimpf, Vanderbilt University; P. Paillet, V. J. Baggio, O. Duhmal, CEA DIF; V. Ferlet-Cavrois, ESA

High-bandwidth time-resolved charge-collection measurements for heavy-ion irradiation up to 70 GeV/amu are performed on low-power 6.1A lattice constant InAlSb/InAs HEMT devices. Novel energy-dependent effects are observed.

Digital Single Event Transient Pulse-Widths Estimation in Logic Cells from Heavy-Ion-Induced Transient Currents in a Single MOSFET T. Makino, S. Onoda, T. Hirao, T. Ohshima, Japan Atomic Energy Agency; D. Kobayashi, K. Hirose, The Graduate University for Advanced Studies and Institute of Space and Astronautical Science

Digital SET pulse-widths originated in logic cells were estimated from heavy-ion-induced transient current waveforms. We showed that estimated widths were in good agreement with previous data.

Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45 nm SOI CMOS K. A. Moen, S. D. Phillips, E. P. Wilcox, J. D. Cressler, Georgia Institute of Technology; H. Nayfeh, A. K. Sutton, IBM Semiconductor Research and Development Center; J. H. Warner, S. P. Buchner, D. McMorrow, Naval Research Laboratory; G. Vizkelethy, P. Dodd, Sandia National Laboratories

Time-resolved measurements of laser and microbeam-induced transients from a commercial 45 nm SOI RF-CMOS technology are presented, providing insight into the RF vs. TID vs. SEE tradeoffs associated with body contacting schemes.

Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike S. Onoda, T. Makino, T. Ohshima, JAEA; N. Iwamoto, JAEA and UEC; G. Vizkelethy, Sandia National Laboratories; K. Kojima, AIST, S. Nozaki, UEC

A transient current following an ion strike in 6H-SiC MOSFETs was measured under the various bias configurations. Charge enhancement by parasitic bipolar transistor was evaluated by using 15MeV-O, 18MeV-O and 50MeV-Cu microbeams.

The Effect of Layout Topology on Single-Event Transient Pulse Quenching in a 65 nm Bulk CMOS Process J. R. Ahlbin, M. J. Gadlage, B. L. Bhuva, R. A. Reed, L. W. Massengill, Vanderbilt University; G. Vizkelethy, Sandia National Labs

Heavy-ion broadbeam and microbeam experiments on a 65 nm bulk CMOS process demonstrate single-event pulse quenching for both normal and angular ion incidence. Layout topologies susceptible to pulse quenching are presented.

22


PF-5

PF-6

DATA WORKSHOP2:35–5:00PM

PLAZABALLROOMSB,C

W-1

W-2

Independent Measurement of SET Pulsewidths from N-Hits and P-Hits in 65-nm CMOS S. Jagannathan, B. L. Bhuva, R. D. Schrimpf, J. Chetia, J. R. Ahlbin, L. W. Massengill, Vanderbilt University; M. J. Gadlage, Vanderbilt University and NAVSEA Crane; B. Narasimham, Broadcom Corporation

Novel circuit techniques for measuring distributions of SET pulsewidths from “NHits” and “PHits” are implemented in 65-nm technology. Heavy ion results show the average “PHits” pulsewidths to be ~30% longer than “NHits” at high LETs.

Investigation and Analysis of LM124 Bipolar Linear Circuitry Response Phenomenon in Pulsed X-Ray Environment N. J.-H. Roche, L. Dusseau, J. Mekki, Y. Gonzalez Velo, S. Perez, J. Boch, F. Saigne, Université Montpellier II; J.-R. Vaille, Université Montpellier II and Université de Nîmes; R. Marec, P. Calvel, Thales Alenia Space; F. Bezerra, CNES; G. Auriel, CEA; B. Azais, DGA

The TREEASETs induced by a High Dose Rate Xray pulse is investigated using an Xray flash facility. A specific methodology based on previously developed ASETs simulation tool is used to model the TREEASETs phenomena.

INTRODUCTION

Chair: Leif Scheick, JPL

Guide to the 2009 IEEE Radiation Effects Data Workshop RecordD. M. Hiemstra, MDA

The 2009 Workshop Record has been reviewed and a table prepared to facilitate the search for radiation response data by part number, type, or effect.

Feasibility of Using Gold Ions at the NASA Space Radiation Facility to Study Space Radiation Effects . M. Sivertz, A. Rusek, I.-H. Chiang, Brookhaven National Laboratory

The NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory delivers Gold ions with energies up to 200 MeV/nucleon for Single Event Effects experiments. Lineal energy deposition, depth dose curves and dosimetry results are presented.

23


W-3

W-4

W-5

W-6

W-7

W-8

W-9

Recent Results for PowerPC Processor and Bridge Chip Testing S. M. Guertin, F. Irom, JPL

Recent test results for the Freescale 7447A, IBM 750FX, and Marvell 64460 integrated circuits are reported. 7447A and 750FX results are compared to earlier work. The 64460 represents unique data.

Single Event Upset Characterization of the Virtex-5 Field Programmable Gate Array Using Proton Irradiation D. M. Hiemstra, G. Battiston, P. Gill, MDA

Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Virtex-5 FPGA are presented. Upset rates in the space radiation environment are estimated.

Sensitivity of 2 Gb DDR2 SDRAMs to Protons and Heavy Ions R. Koga, P. Yu, J. George, S. Bielat, The Aerospace Corp.

SEE sensitivity to protons and heavy ions is examined with several 2 Gb DDR2 SDRAM device types. Upsets in memory elements as well as in control circuit sections have been measured.

90-nm Digital Single Event Transient Pulsewidth Measurements R. K. Lawrence, J. F. Ross, N. E. Wood, BAE Systems

Single event transient pulsewidth measurements were made on 90 nm shift registers built with temporal delay latches. Data was gathered using heavy ions from LETs of 9.75 to 58.78 (MeV-cm2)/mg.

SEE Results for a 4-Port SpaceWire Router C. Hafer, B. Baranski, J. Larsen, F. Sievert, A. Jordan, Aeroflex Colorado Springs

A 4-Port SpaceWire Router has been designed, manufactured, and characterized for radiation effects. The device is SEL immune and TID tolerant to 300 krad(Si). The SEE performance is summarized.

Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA M. V. O’Bryan, D. Chen, H. S. Kim, A. M. Phan, M. D. Berg, MEI Technology Inc. at NASA GSFC; K. A. LaBel, J. A. Pellish, J.-M. Lauenstein, C. J. Marshall, R. L. Ladbury, A. B. Sanders, M. A. Xapsos, NASA GSFC; T. R. Oldham, Perot Systems Government Services, Inc.; S. P. Buchner, Global Defense Technology and Systems, Inc.; P. W. Marshall, Consultant

We present the results of single event effects testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Compendium of Test Results of Recent Single Event Effects Tests Conducted by the Jet Propulsion Laboratory S. S. McClure, G. R. Allen, L. Z. Scheick, P. Adell, T. Miyahira, A. Kenna, L. Selva, JPL

This paper reports heavy ion and proton induced single event effects results from recent tests for a variety of microelectronic devices. The compendium covers devices tested over the last two years by the Jet Propulsion Laboratory.

24


W-10

W-11

W-12

W-13

W-14

W-15

W-16

Cross Comparison Guide for Results of Neutron SEE Testing of Microelectronics Applicable to Avionics E. Normand, EN Associates LLC; L. Dominik, Honeywell

A comparison of SEU, SEFI and SEL responses in more than 30 devices using different neutron/proton beams shows that SEU and SEFI cross sections from 14 MeV neutrons are within a factor 2 when compared to LANL neutron beam.

Commercially Designed and Manufactured SDRAM SEE Data C. Hafer, M. Von Thun, M. Leslie, F. Sievert, A. Jordan, Aeroflex Colorado Springs

A commercially designed/manufactured 512Mb SDRAM is SEL immune and 100 krad(Si) TID tolerant. It is packaged for application use into both a 2.5Gb and a 3Gb MCM configuration. SEE performance is reported.

SEE Testing of National Semiconductor’s LM98640WG-QML, a Fully Integrated, Mixed Signal, Dual Channel, 14 B, 40 MS/s, System on a Chip Solution for Focal Plan Arrays and Other Imaging Systems K. Kruckmeyer, R. Eddy, B. Brown, A. Szczapa, J. Clark, M. Yao, National Semiconductor

SEE test challenges, solutions and results are presented for the LM98640W-MLS, a complex signal processing solution consisting of integrated 14 bit ADCs, correlated double sampler, DLL, offset correction DACs, amplifiers, serializer, and other components.

Radiation Effects in the LUPA4000 CMOS Image Sensor G. R. Hopkinson, L. Gomez Rojas, Surrey Satellite Technology Ltd; L. Duvet, European Space Agency

Cobalt60, heavy ion and proton irradiations of the LUPA4000 2048x2048 pixel CMOS image sensor were performed to assess the performance for ESA’s proposed Solar Orbiter mission. Performance is acceptable up to > 20 krad(Si).

Radiation Effects in 130nm 1Mbit MRAM J. Heidecker, JPL

This paper presents experimental results for both total integrated dose (TID) and single event latchup (SEL) for a 1Mbit MRAM (magnetoresistive random access memory) manufactured on a 130nm commercial CMOS process.

TID and SEE Responses of Rad-Hardened A/D Converters G. Chaumont, A. Uguen, C. Prugne, STMicroelectronics; F. Malou, CNES

We present Single Event Effect characterization and Total Ionizing Dose response up to 300 krad(Si) on a Rad-Hard A/D converter.

A Hardened Point of Load Regulator for the Total Dose and Single Event Environments N. W. van Vonno, L. W. Pearce, H. W. Satterfield, E. T. Thomson, A. P. Williams, T. E. Fobes, P. Chesley, J. S. Gill, Intersil Corporation

We report the results of total dose and SEE testing of the ISL70001RH hardened POL regulator together with a discussion of part design, performance and applications. The part is implemented in a submicron BiCMOS process.

25


W-17

W-18

W-19

W-20

W-21

W-22

Total Dose and Single Event Testing of a Hardened Single-Ended Current Mode PWM Controller N. W. van Vonno, L. W. Pearce, G. M. Wood, J. D. White, E. J. Thomson, T. M. Bernard, P. Chesley, R. Hood, Intersil Corporation

We report results of total ionizing dose and SEE testing of the ISL7884xASRH hardened single-ended current mode PWM controller including discussion of part design, process, and performance. The part is implemented in submicron BiCMOS.

Single Event and ELDRS Effects in the DS16F95 RS-485 Transceiver A. T. Kelly, R. D. Brown, P. R. Fleming, BAE Systems; F. Wong, Space Systems Loral

Single Event Effects and ELDRS response in National Semiconductor’s DS16F95 Radiation-Hardened RS-485 Transceiver are reported. SEE characterization and error rates are presented, while results of ELDRS analysis will be presented when available.

Radiation Test of 8 Bit Microcontrollers ATmega128 & AT90CAN128 A. Schuettauf, S. Rakers, C. Daniel, Astrium Space Transportation

We have performed heavy ion tests of the ATmega128 and AT90CAN128 microcontroller. These COTS devices have shown an atypical sensitivity to SEE errors. Detailed measurements and analyses are presented.

ELDRS Characterization for a Very High Dose Mission R. D. Harris, S. S. McClure, B. G. Rax, A. J. Kenna, D. O. Thorbourn, K. B. Clark, T.-Y. Yan, JPL

Bipolar integrated circuits have been evaluated for doses up to 1 Mrad using a modified ELDRS test method. The use of dose rate trend data and enhancement factors to predict performance is called into question.

The Effects of ELDRS at Ultra-Low Dose Rates D. Chen, J. Forney, M. Carts, A. Phan, MEI Technology/NASA GSFC; S. Cox, K. LaBel, NASA GSFC; K. Kruckmeyer, National Semiconductor; S. Burns, R. Albarian, Linear Technology Corp.; B. Holcombe, B. Little, J. Salzman, Texas Instruments, Inc.

We present results of ultra-low dose-rate irradiations on a variety of commercial and radiation hardened bipolar circuits. We observed enhanced degradations at dose rates lower than 10 mrad(Si)/s in some devices.

Current Total Ionizing Dose and Displacement Damage Compendium of Candidate Spacecraft Electronics for NASA D. J. Cochran, D. Chen, M. V. O’Bryan, MEI Technologies Inc. c/o NASA GSFC; T. R. Oldham, S. P. Buchner, Dell Perot Systems, Inc.; K. A. LaBel, J. A. Pellish, NASA GSFC

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

26


W-23

W-24

W-25

W-26

W-27

5:00PM

Comparison of TID Response of Micron Technology Single-Level High Density NAND Flash Memories F. Irom, D. N. Nguyen, JPL

Total ionizing dose (TID) response for Micron Technology single-level cell (SLC) 1Gb, 2Gb, 4Gb and 8Gb NAND flash memories are reported.

Performance of Commercial Off-the-shelf Microelectromechanical Systems Sensors in a Pulsed Reactor Environment K. E. Holbert, Arizona State University; A. S. Heger, S. S. McCready, Los Alamos National Laboratory

We present total dose testing of several MEMS accelerometers and pressure transducers to ascertain their radiation hardness after piezoresistive sensors failed unexpectedly in an elevated gamma-ray environment and reactor core pulse tests.

Radiation Hardness Characterization of a 130nm ASIC Library Technology R. P. Dumitru, C. Hafer, T.-W. Wu, R. Rominger, H. Gardner, P. Milliken, K. Bruno, T. Farris, Aeroflex Colorado Springs

Radiation hardness characterization has been performed on a RadHard-by-Design ASIC Library designed using a 130nm commercial fabrication process. Test chip results are presented illustrating the ASIC library performance and radiation hardness response.

Radiation Performance of Commercial SiGe HBT BiCMOS High Speed Operational Amplifiers D. Chen, A. Phan, H. Kim, MEI Technology/NASA GSFC; J. Pellish, K. LaBel, NASA GSFC; S. Burns, R. Albarian, Linear Technology Corp.; B. Holcombe, B. Little, J. Salzman, Texas Instruments, Inc.

We found that commercial SiGe operational amplifiers are susceptible to heavy-ion-induced SETs. The SET cross-section and LET threshold increase with operating frequency, while the cross-section also increases from accumulated proton irradiation.

Radiation Testing a Very Low-Noise RHBD ASIC Electrometer A. R. Jones, D. O’Connor, E. M. Thiemann, V. A. Drake, G. Newcomb, N. White, S. Dooley, P. Haskins, V. Wei Hsu, T. Reese, P. Soto Hoffman, University of Colorado at Boulder; D. D. Aalami, Space Instruments; H. L. Clark, Texas A and M University; R. L. Ladbury, NASA GSFC; B. von Przewoski, Indiana University; B. Kirby, University of Michigan

We report the results of SEE and TID testing of a very-low-noise six-channel electrometer ASIC constructed through the MOSIS service using the On Semiconductor C5N process.

ENDOFWEDNESDAYSESSIONS

27

Technical Program ThursdayTechnical Program Thursday


8:30–9:35AMHigh Power Microwave Sources – Present Status and Future TrendsEdl Schamiloglu, University of New Mexico

Traditional vacuum electronics sources of coherent radiation fill significant commercial and DOD needs, ranging from communications to radar. Despite advances in solid state microwave components, many existing needs will never find a solid state solution, simply because of the large power densities that are required. Research in traditional vacuum electronics is derived from electrical engineering curriculum that was common in the 1950’s and early 1960’s. In the late 1960’s with the availability of pulsed power accelerators that can generate high voltages and high currents, a new field was born – High Power Microwaves (HPM). Unlike the vacuum electronics community, the HPM researchers were drawn from the plasma physics community. The simple reason for this is that the intense electron beams used for HPM generation had very high space charge fields and very high currents, and plasma physicists knew how to handle beam-wave interactions in such intense environments. This presentation will review developments in the HPM field over the past 40 years, will explain the paradigm shift that occurred in the mid-1990’s as the fidelity of computational models improved dramatically, and will suggest possible paths for future developments.

Edl Schamiloglu received the B.S. and M.S. degrees from the School of Engineering and Applied Science, Columbia University, New York, in 1979 and 1981, respectively, and the Ph.D. degree in applied physics (minor in mathematics) from Cornell University, Ithaca, NY, in 1988. He was appointed Assistant Professor of Electrical and Computer Engineering at the University of New Mexico (UNM) in 1988. He is currently Professor of Electrical and Computer Engineering and directs the Pulsed Power, Beams, and Microwaves Laboratory at UNM. He lectured at the U.S. Particle Accelerator School, Harvard University, in 1990 and at MIT in 1997. He coedited Advances in High Power Microwave Sources and Technologies (Piscataway, NJ: IEEE, 2001) (with R.J. Barker) and he has coauthored High Power Microwaves, 2nd Ed. (Taylor & Francis, New York, NY, 2007) (with J. Benford and J. Swegle). Both of these books have been translated into Chinese. He is currently working on Essential Mathematics for Electrical Engineering (with Chaouki Abdallah and Antonio Tornambé, Cambridge University Press, 2010). He coedited the July 2004 Special Issue of the Proceedings of the IEEE on Pulsed Power Technology and Applications. He is a Fellow of the IEEE, an EMP Fellow (sponsored by the Summa Foundation), a Senior Editor of the IEEE Transactions on Plasma Science, an Associate Editor of JEMWA (Journal of Electromagnetic Waves and Applications), and has served on a National Academies Panel on Directed Energy Testing (2003-2004). He was the General Chair of the IEEE PPPS-2007 Conference in Albuquerque, NM in June 2007. He was selected as the Outstanding Engineering Educator by the IEEE Albuquerque Section in 2008.

28


SESSION G9:35AM

G-19:40AM

G-29:55AM

G-310:10AM

POSTER PAPERSPG-1

PG-2

HARDNESS ASSURANCESESSIONINTRODUCTIONChair: Stephen Buchner, Global Strategies Group

Increase in the Heavy-Ion Upset Cross Section of Floating Gate Cells Previously Exposed to TIDM. Bagatin, S. Gerardin, A. Paccagnella, University of Padova; G. Cellere, Applied Materials Baccini; A. Visconti, M. Bonanomi, Numonyx

The combined effects of x-ray and heavy-ion exposure on Floating Gate cells are analyzed in terms of number of errors and threshold voltage shifts. Scaling effects and implications for hardness assurance are discussed.

A New Approach for Single-Event Effects Testing with Heavy Ion and Pulsed Laser Irradiation:Silicon Substrate Removal in a CMOS/SOI SRAM N. Kanyogoro, S. Buchner, D. McMorrow, H. Hughes, J. Melinger, NRL; M. Liu, A. Hurst, Trusted Semiconductor Solutions; C. Capasso, Freescale Semiconductors

Novel methodology for single-event effects testing, involving complete removal of the silicon substrate of SOI devices, is introduced and demonstrated using a 90-nm, 4-Mb SRAM test vehicle. Applications and significance are discussed.

Evaluation of an Accelerated ELDRS Test Using Molecular Hydrogen P. C. Adell, B. G. Rax, S. S. McClure, JPL; R. Pease, RLP Research; H. J. Barnaby, Arizona State University

The accelerated-total-dose-hardness-assurance-test that uses high-dose-rate irradiation on ELDRS-sensitive devices exposed to molecular-hydrogen is assessed against ELDRS-free devices to see if the test is overly-conservative.

Single-Event Upset (SEU) Results of Embedded Error Detect and Correct Enabled Block Random Access Memory (Block RAM) Within the Xilinx XQR5VX130 G. Allen, L. Edmonds, JPL; C. W. Tseng, G. Swift, C. Carmichael, Xilinx

Recent heavy ion measurements of the Single-Event Upset (SEU) cross-section for 65nm embedded Block RAM are presented. Results of initial investigation into the on-chip Error Detection and Correction (EDAC) are also discussed.

Statistical Techniques for Analyzing Process or Similarity Data in TID Hardness Assurance R. L. Ladbury, NASA GSFC

We investigate techniques for estimating the contributions to TID hardness variability for families of linear bipolar technologies, determining how part-to-part and lot-to-lot variability change for different part types in the process.

29


PG-3

PG-4

PG-5

10:25–10:55AMPLAZABALLROOMSA,D

SESSION H10:55AM

H-111:00AM

Significance of Worst-Case Test Vectors for Leakage Current Failures Induced by Total Dose in ASICs A. A. Abou-Auf, H. A. Abdel-Aziz, M. M. Abdel-Aziz, T. A. Abdul-Rahman, The American University in Cairo

We validated the significance of worst-case test vectors (WCTV) in total-dose testing using fault models extended to processes with field oxide leakage. We developed a fast search algorithm for WCTV in large ASICs.

Interpreting Space-Mission LET Requirements for SEGR in Power MOSFETs J.-M. Lauenstein, R. L. Ladbury, D. A. Batchelor, NASA GSFC; N. Goldsman, University of Maryland; H. S. Kim, A. M. Phan, MEI Technologies

A simulation-based method was developed to evaluate whether derating of high-energy heavy-ion accelerator test data bounds the risk for SEGR from much higher-energy on-orbit ions for a mission LET requirement.

Localized Irradiation of a Microcircuit Using a Scanning Electron Microscope for Observation of Circuit Effects Y. Gonzalez Velo, J. Boch, F. Pichot, J. Mekki, N. J.-H. Roche, S. Perez, L. Dusseau, F. Saigné, Université Montpellier II; J.-R. Vaillé, IES UMR; E. Lorfèvre, CNES; R. D. Schrimpf, Vanderbilt University

A novel automatic localized irradiation system is demonstrated as a means of observing compensation effects on circuit parameters and understanding degradation mechanisms. Identification of individual device contributions to circuit parameter sensitivity is also possible.

BREAK

DOSIMETRYSESSIONINTRODUCTIONChair: Ewart Blackmore, TRIUMF

Space Dosimeters Based on CMOS SSPM Technology X. J. Chen, E. B. Johnson, C. J. Staples, E. Chapman, G. Alberghini, S. Mukhopadhyay, J. Christian, Radiation Monitoring Devices, Inc.

A dosimeter based on a CMOS solid-state photomultiplier coupled to a scintillation material represents an attractive approach for space-based applications. The dosimeter provides accurate dose information for various types of space radiation.

30


H-211:15AM

H-311:30AM

H-411:45AM

POSTER PAPERSPH-1

PH-2

Neutron dosimeter based on MEDIPIX-2M. A. R. Othman, M. Petasecca, S. Guatelli, M. L. F. Lerch, A. B. Rosenfeld, University of Wollongong; J. Uher, CSIRO Process Science and Engineering; D. A. Prokopovich, M. I. Reinhard, University of Wollongong and The Australian Nuclear Science & Technology Organisation; D. G. Marinaro, Defence Science and Technology Organisation; J. Jakubek, S. Pospisil, Czech Technical University in Prague

Approach to creation of energy independent neutron dosimeter for personnel in avionics and space environment has been proposed utilizing pixelated silicon detector. The response of dosimeter was simulated with GEANT 4.

Dose Enhancement and Reduction in SiO2 and High-K MOS Insulators A. Dasgupta, D. M. Fleetwood, R. A. Reed, R. A. Weller, M. H. Mendenhall, B. D. Sierawski, Vanderbilt University

Dose enhancement in SiO2 and reduction in HfO2 are estimated for 10-keV X-rays using the Monte Carlo simulator, MRED. Effects for high-k and SiO2 dielectric layers are evaluated versus oxide thickness.

Monte Carlo Analyses of the NEOBeam Electron Beam Facility for Space Solar Cell Radiation Qualification S. R. Messenger, J. H. Warner, R. J. Walters, US Naval Research Laboratory; R. Uribe, Kent State College of Technology

Electron irradiations are used to induce displacement damage in solar cells to satisfy the AIAA S-111 space cell qualification document . Radiation experiments will confirm MCNPX simulations to analyze electron transport at the NEOBeam facility.

Dosimetry Comparisons Between Various Single Event Test Facilities E. L. Petersen, Consultant

We compare the statistical errors in single event dosimetry at various facilities. It is possible to have systematic standard deviations in the data of 33% when the desired values are closer to 10%.

Low Dose RADFET Dosimetry During in-Orbit Experiment on Board NANOSAT1B C. P. Fernandez, C. Hernando, I. Arruego, M. T. Alvarez, INTA; M. M. Pejovic, Nis, Serbia; A. B. Jaksic, Tyndall National Institute

We present RADFET dosimetry experiment on board NANOSAT1B satellite during first six months in orbit. Two different RADFET types have been employed for TID evaluation. The results imply correct ground calibration and operation of RADFETs.

31


PH-3

PH-4

12:00–1:30PM

SESSION I1:30PM

I-11:35PM

I-21:50PM

I-32:05PM

Radiation Response of Forward Biased Float Zone and Magnetic Czochralski Silicon Detectors of Different Geometry for 1-MeV Neutron Equivalent Fluence Monitoring J. Mekki, L. Dusseau, F. Saigné, N. J. H. Roche, University of Montpellier II; M. Moll, M. Glaser, CERN

Aiming at evaluating new options for radiation monitoring sensors for LHC/SLHC experiments, the radiation responses of FZ and MCz silicon detectors of different geometry have been studied up to about 4×1014 neq/cm2.

Development of Gd-pMOSFET Dosimeter for Thermal Neutron Dosimetry N. Lee, Korea Atomic Energy Research Institute; G. Youk, ServeBot Inc.

A set of pMOSFET dosimeters having a Gd (Gadolinium) layer for low energy neutron detection has been developed. The resultant neutron response was distinguishable (1.48mV/rad(Si)) and proportional to the accumulated neutron dose.

LUNCH

SINGLE-EVENT EFFECTS: DEVICES AND INTEGRATED CIRCUITSSESSIONINTRODUCTIONChair: William Robinson, Vanderbilt University

Heavy Ion, High Energy and Low Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs E. Cannon, M. Cabanas-Holmen, J. Wert, T. Amort, R. Brees, J. Koehn, B. Meaker, E. Normand, The Boeing Company

We measure sensitivity of different 90-nm SRAM cells to single-event upsets (SEUs) caused by heavy ions, high energy protons, and low energy protons. We discuss radiation hardening by design techniques that impact SEU sensitivity.

Combining Results of Accelerated Radiation Tests and Fault Injection to Predict the Error Rate of Applications Implemented in SRAM-Based FPGAs R. Velazco, G. Foucard, P. Peronnard, ARIS, TIMA Labs

Combining SRAM-based FPGA static cross-section with results of fault injection campaigns allows predicting the error rate of any implemented application. Experimental results are confronted to predictions in order to validate the proposed methodology.

Synchronization Techniques for Crossing Multiple Clock Domains in FPGA-Based TMR Circuits Y. Li, B. E. Nelson, M. J. Wirthlin, Brigham Young University

Signals which cross clock domains in TMR circuits suffer from a combination of synchronization issues and SEUs. We propose a new synchronizer that mitigates this problem for all configuration upsets in SRAM-based FPGAs.

32


Charge Collection in Power MOSFETs - Evidence of Range and Energy Effects V. Ferlet-Cavrois, F. Sturesson, A. Zadeh, C. Poivey, G. Santin, M. Poizat, A. Keating, R. Harboe-Soren, ESA/ESTEC; F. Bezerra, R. Ecoffet, CNES; D. Peyre, EADS Astrium; P. Truscott, Qinetiq; J. R. Schwank, Sandia National Laboratories

Charge collection is used to analyse the statistical response of power MOSFETs as a function of the incident ion energy. These data contribute to explain the higher sensitivity to SEB at high energy.

Cross-Section Estimation in the Presence of Uncertain Dosimetry R. D. Morris, Universities Space Research Association; C. C. Foster, Foster Consulting Services; A. Kottas, M. Farah, University of California

We present methodology to simultaneously estimate the cross-section vs LET response of a part and the dosimetry from test data. We show the effects of fluence uncertainty on predicted on-orbit upset rates.

SEE Characterization of the New RTAX-DSP (RTAX-D) Antifuse FPGA S. Rezgui, J. McCollum, J. Wang, R. Sharmin, ACTEL Corporation

New SEE hardening-by-design techniques for the new RTAX-DSP FPGA have been implemented and evaluated in-beam to show their efficacy in mitigating SETs with little area overhead and time penalty.

A Comparative Analysis of Different Mitigation Techniques for Single Event Effects in Flash-Based FPGAs N. Battezzati, L. Sterpone, M. Violante, DAUIN, Politecnico di Torino; D. Merodio Codinachs, C. Poivey, European Space Agency

Performance of different SEEs mitigation techniques have been evaluated with respect to cross-section and area/delay overhead. The analysis compares results both from heavy-ion radiation experiments and electrical based fault-injection campaigns.

Experimental Study of the Single Event Upset Accumulation in SRAM-Based FPGAs Z. M. Wang, Tsinghua University; Z. B. Yao, H. X. Guo, M. Lv, Northwest Institute of Nuclear Technology

An experimental study was carried out during which SEUs were allowed to accumulate in FPGAs’ configuration memory. We found that TMR could only provide a small improvement in fault accumulation tolerance.

High-Performance Computing for Airborne Applications H. Quinn, A. Manuzzato, F. Tom, D. Nick, D. G. Rose, ISR, LANL; J. Barton, H. Michael, Xilinx

In this paper, we will present radiation data for high-performance computing devices in a neutron environment. These devices include a multi-core digital signal processor, two field-programmable gate arrays, and a processor.

I-42:20PM

POSTER PAPERSPI-1

PI-2

PI-3

PI-4

PI-5

High-Speed, Intra-System Networks H. Quinn, P. Graham, A. Manuzzato, T. Fairbanks, N. Dallmann, R. Des Georges, ISR, LANL

Recently, engineers have been studying on-payload network switches for fast communication paths. In this abstract we will present radiation data and performance analysis for using a Broadcom network switch in a neutron environment.

Soft Error and Soft Delay Mitigation Using Dynamic Threshold Technique S. Sayil, N. Patel, Lamar University

We have studied SE robustness of various DTMOS based power optimizations and found that DTMOS technique can be successfully combined with driver sizing to mitigate the SEU and Soft Delay effects using less area overhead.

INTRODUCTION

Chair: Véronique Ferlet-Cavrois, ESA/ESTEC

ENDOFTHURSDAYSESSIONS

RADIATION EFFECTS COMMITTEE OPEN MEETING

33


PI-6

PI-7

POSTER SESSION2:35–5:00PM

PLAZABALLROOMSB,C

5:00PM

5:30–7:00PMPLAZABALLROOMSE,F


8:30–9:40AMReflections on 47-Plus Years of NSREC HistoryEdward E. Conrad

In 2013 we will celebrate the 50th Anniversary of the NSREC. The proceedings of the conference, as published annually in the IEEE Transactions on Nuclear Science and Engineering, provide an excellent historical portrayal of the advances in this very important technological field. However, there is only meager documentation of the origin of the conference, the programmatic drivers for its support and the contributions of the many individuals who volunteered their personal time to organize the conference, referee the papers and seek a proper venue. Many have used this conference to share the results of their research, enjoy the benefits of peer review and build lasting friendships in the course of pursuing their careers.

The number of participants who are familiar with the early history of the NSREC has atrophied over the years for many reasons including, national priorities, changes in interests and careers, retirements and the finite nature of human longevity. This paper discusses some historic events that were forerunners of the NSREC, including early international conferences and courses, organizations such as the European Atomic Energy Community (Euratom) and the International Electro-technical Commission, political situations and national needs. References are made to industrial, academic and government research centers of excellence and some members of their staffs who left an indelible imprint on this conference in terms of their technical competence, character, and personality. Some major technical discoveries and resulting theories will be discussed that produced major changes in the state of the art and the nature and emphasis of the conference. In summary, a short discussion is given of where this field of R&D is going and the future challenges that will be faced.

Edward E. Conrad (Ed) is one of the founders of the NSREC conference. He was the first Guest Editor of the Radiation Effects Conference Special Issue of the Transactions on Nuclear Science and Engineering. He was elected Chairman of the IEEE Radiation Effects Committee in 1964 and to the NPSS Steering Committee in 1965.

Ed has enjoyed a 55-year career in research on nuclear radiation effects, beginning with early atmospheric nuclear testing of electronics in 1956 and advancing through many years of laboratory experiments, underground nuclear testing and R & D management. He began his government career in 1951 at the former National Bureau of Standards (now NIST) and entered employment with the U.S. Army when his organization was transferred from the Department of Commerce to the U.S. Army Ordnance Corps in 1953. He ultimately was appointed Associate Technical Director of the U.S. Army Harry Diamond Laboratories in 1974. Ed was invited to join the Defense Nuclear Agency in 1976 and became the Deputy Director (Science and Technology) in 1979. Upon his retirement from the U.S. Government Service in 1983 he joined the former Kaman Sciences Corporation as a Vice President where he worked until his final retirement from full-time employment in 1993. Since that time he has continued to consult for several government agencies and commercial corporations on nuclear effects issues. He has served on many DOD and academic advisory Committees.

Ed was born in 1927 and raised in the San Francisco Bay area of California. He served in the U.S. Navy in WWII. He holds a Bachelors Degree in Physics from the University of California at Berkeley, a Masters degree in Solid State Physics and a Ph.D. in Nuclear Engineering from the University of Maryland. He is a Fellow of the IEEE, a member of the American Physical Society and Sigma Xi. He was a recipient of the Peter Haas Award in 2002.

34

Technical Program FridayTechnical Program Friday

35


SESSION J9:40AM

J-19:45AM

J-210:00AM

10:15–10:45AMPLAZABALLROOMSA,D

J-310:45AM

J-411:00AM

HARDENING BY DESIGNSESSIONINTRODUCTIONChair: AJ Kleinosowski, Boeing

Including the Effects of Process-Related Variability on Radiation Response in Advanced Foundry Process Design Kits Y. F. Li, Y. J. Wu, S. Cai, Accelicon Technologies, Inc.; N. Rezzak, R. Schrimpf, E. Zhang, D. Fleetwood, Vanderbilt University

Space applications using advanced foundry processes require device models that include dependence of TID response on process variability. An automated flow is described for TID-aware PDK generation using test chips, modeling, and simulation.

Optimization of Well and Substrate Contact Spacing for Single Event Latchup Hardness N. A. Dodds, R. A. Reed, R. D. Schrimpf, L. W. Massengill, R. A. Weller, Vanderbilt University; J. M. Hutson, Northrop Grumman Corporation; J. A. Pellish, M. A. Xapsos, NASA GSFC; H. S. Kim, M. D. Berg, M. R. Friendlich, A. M. Phan, C. M. Seidleck, MEI Technologies; X. Deng, R. C. Baumann, Texas Instruments, Inc.

We demonstrate the effects of well and substrate contact spacing on single event latchup through experiments and simulations. A simple approach to optimize contact spacing is presented that ensures latchup hardness while minimizing device area.

BREAK

Design of Digital Circuits Using Inverse-Mode Cascode SiGe HBTs for Single Event Upset Mitigation T. Thrivikraman, E. Wilcox, S. D. Phillips, J. D. Cressler, Georgia Institute of Technology; G. Vizkelethy, P. Dodd, Sandia National Laboratories; P. Marshall, Consultant with NASA GSFC

Ion microprobing results confirm the benefits of using the IMC device for SEE mitigation. An IMC shift register design is presented that achieves 1 Gbps data rate with simulation results showing a reduction in SEE.

Optimizing Electrical Performance and TID Hardness in High Performance 90-nm RHBD SRAM Caches M. Cabanas-Holmen, E. Cannon, T. Amort, R. Brees, A. Kleinosowski, B. Meaker, The Boeing Company

We measure the response of various 90-nm SRAM cells to Total Ionizing Dose and rapid recovery during room temperature annealing. We discuss the impact of Radiation Hardened by Design (RHBD) techniques on TID sensitivity.

36


J-511:15AM

J-611:30AM

POSTER PAPERSPJ-1

PJ-2

PJ-3

PJ-4

Area Efficient Temporally Hardened by Design Flip-Flop Circuits B. Matush, J. Knudsen, Arizona State University; L. T. Clark, AMD

Multibit flipflops that use spatially interleaved master and slave temporal latches to mitigate induced errors with high area efficiency are described. Heavy ion test results are presented along with an improved design and APR considerations.

A Rad-Hard Miniaturized Switching Module for High Voltage Applications P. C. Adell, T. A. Vo, L. Y. Del Castillo, T. F. Myahira, M. M. Mojarradi, JPL

A miniaturized, rad-hard high-voltage module is demonstrated as a proof-of-concept. The module is suitable for extreme environments. We use several radiation-hardening-by-design techniques to improve radiation-hardness over 100krad.

A Simple-and-Easy-for-Tolerance (SETOL) Method to Mitigate Single Event Upsets and Transients L. Wang, S. Yue, Y. Zhao, Beijing Microelectronics Technology Institute

A simple-and-easy-for-tolerance (SETOL) method is proposed and simulated. This method makes digital circuits with CMOS process extremely tolerant to single event upsets and single event transients with relatively low overhead.

DICE Based Flip-Flop with SET Pulse Discriminator on a 90nm Bulk CMOS Process A. Makihara, E. Tsukasa, HIREC; A. Maru, H. Shindou, S. Kuboyama, JAXA; T. Hirao, JAEA

DICE based Flip-Flop with SET pulse discriminator on a 90nm bulk CMOS process was designed and fabricated. Its improved performance was demonstrated with radiation testing and discussion was made in comparison with TMR.

Failure Analysis and Radiation Enabled Circuit Simulation of a Dual Charge Pump Circuit G. J. Schlenvogt, H. J. Barnaby, K. E. Holbert, Arizona State University; J. Wilkinson, S. Morrison, Medtronic, Inc.; L. Tyler, Medtronic Microelectronics Center

Dual charge pump data show a reduction of circuit output with dose. The response mechanism is identified through TID testing of individual process monitor devices and supported through circuit simulation.

Demonstration of a Differential Layout Solution for Improved ASET Tolerance in CMOS A/MS Circuits S. E. Armstrong, NSWC Crane and Vanderbilt University; B. D. Olson, W. T. Holman, L. Massengill, Vanderbilt University; J. Warner, D. McMorrow, Naval Research Laboratory

Layout considerations that exploit charge-sharing phenomena for ASET mitigation in fully-differential analog / mixed-signal designs are explored in a 65 nm CMOS process. Preliminary RHBD layout guidelines are discussed.

37


PJ-5

PJ-6

PJ-7

11:45AM

A RHBD LC-Tank Oscillator Design Tolerant to Single-Event Transients L. Chen, T. Wang, K. Wang, A. Dinh, University of Saskatchewan; B. Bhuva, Vanderbilt University; R. Shuler, NASA JSC

A novel SETs-tolerant LC Tank VCO is designed, simulated, and tested using 90 nm fabrication process. Results show significant reduction in the SET-induced amplitude and phase shifts in the output waveform.

A 133MHz Radiation Hardened Delay Locked Loop R. Sengupta, B. Vermeire, L. T. Clark, B. Bakkaloglu, Arizona State University

A CMOS radiation hardened all-digital delay locked loop for clock synchronization in DDR memories is proposed. It is hardened against single event transients with power and area overheads of just 32% and 37% respectively.

An RHBD Technique to Mitigate Missing Pulses in Delay Locked Loops P. Maillard, W. T. Holman, T. D. Loveless, B. L. Bhuva, L. W. Massengill, Vanderbilt University

A technique for single-event mitigation in DLLs is proposed. Using a hardened differential delay cell design for a voltage-controlled delay line results in a dramatic reduction in missing pulses after an ion strike.

ENDOFCONFERENCE

RESG NEWSRESG NEWS

38

NSREC 2010 will be held at the Sheraton Downtown Denver Hotel, Denver, Colorado. Denver was founded in 1858 during the Pikes Peak gold rush, and today serves as the crossroads of the Rocky Mountains. As the 16th largest metropolitan area in the US, Denver has a strong and diversified economy, and provides a wealth of opportunities for tourism in and around the Mile-High City. Joe Benedetto and his 2010 conference committee have assembled a strong technical program and social events that will provide abundant opportunities for discussing radiation effects with old and new friends in the international radiation effects community.

Supporters of the conference include the Defense Threat Reduction Agency, Air Force Research Laboratory, Sandia National Laboratories, the NASA Electronic Parts and Packaging Program, the Jet Propulsion Laboratory, BAE Systems, Intersil, Honeywell, Boeing, Northrop Grumman, Southwest Research Institute, and Aeroflex Colorado Springs. We thank our supporters for their significant and continuing commitments to the conference, and we welcome other organizations to consider becoming sup-porters of the IEEE NSREC.

NSREC 2011 will be held in Las Vegas, NV, July 25-29, at the JW Marriott Hotel. For those who love the glamor, the glitz, and the excitement, this site is a 15 to 20 minute drive from the Las Vegas strip. For those who prefer to avoid the bustle of the Las Vegas scene, there is an abundance of activities at the conference hotel and in the nearby Red Rocks area. The conference chair is Kay Chesnut of Boeing. Ken Label, of NASA GSFC, will be the chairman of the 2012 conference, which will be held at the Intercontinental Hotel in Miami, FL, and Jeff Black, of Vanderbilt University, will be the conference chairman of the 2013 conference.

As always, papers presented at the NSREC are eligible for publication in the December issue of the IEEE Transactions on Nuclear Science. This year we will continue the fully electronic submission and review process. It is particularly important for authors to upload their papers prior to the conference for consideration for pub-lication in the December TNS Special Issue. Detailed instructions can be found at www.nsrec.com/editmsg.htm.

Keep visiting our website at www.nsrec.com for author information, paper submis-sion details, vendor links, on-line registration, and the latest NSREC information.

Marty ShaneyfeltExecutive Vice Chairman

IEEE FELLOWS Two distinguished members of the international radiation effects community were elected to the grade of IEEE Fellow on January 1, 2010.

Paul Emerson Dodd, Sandia National Laboratories, Albuquerque, NM, USA

Paul’s citation reads, “For contributions to the understanding and simulation of single-event effects in microelectronics.”

Patrick M. Lenahan, Pennsylvania State University, University Park, PA, USA

Pat’s citation reads, “For contributions to understanding of radiation damage and reliability of metal-oxide semiconductor devices.”

Dan FleetwoodChairman

RESG NEWSRESG NEWS

39

HARRY DIAMOND AWARD

Dr. James M. (Jim) McGarrity is a Life Fellow of the IEEE and is a member of the Nuclear and Plasma Science Society (NPSS) and the Electron Device Society (EDS). In 1985 he became a Fellow of IEEE for his research on radiation effects in metal oxide semiconductor (MOS) devices. He has served the NSREC in many roles since 1970 including REC chairman, Guest Editor, Short Course Chairman, Session Chairman, reviewer and presenter.

Jim received his B.S. in Physics from St. Joseph’s University in 1958 and in 1961 he joined the Harry Diamond Labs (HDL) as the TRIGA reactor staff physicist. In 1970 after completing his PhD at the University of Maryland he began performing radia-tion effects research on dielectrics, which by 1973 became focused on MOS devices. Later he became the team leader of the MOS research team at HDL and in 1980 the Chief of the Radiation Effects Physics Branch. In 1991 he became the Associate of Science and Technology for the Sensors and Electron Devices Directorate of the Army Research Laboratory. In 1992 as an Army ST he began research on radiation effects in SiC JFETs for space and nuclear power applications. Since that time he has continued research and development on SiC Power MOSFETs.

During his government career Jim served as an advisor to Defense Nuclear Agency, U.S. Army Space and Strategic Defense Command, and Defense Trade Security Administration. From 1983 to 1988 he served as the Deputy for Radiation Hard Electronics for the OSD Very High Speed Integrated Circuit (VHSIC) program office. Since his retirement from the Army Research Laboratory in 1998, he has been a research associate in the ECE Department at the University of Maryland and a con-sultant. In 2009 he joined Cool CAD, Electronics where he is in responsible for stra-tegic planning for SiC power electronics. Jim has over 70 publications, which have been cited more than 1300 times. Two of these publications were recognized as IEEE NSREC Outstanding Conference Papers.

The Harry Diamond Award honors individuals for distinguished technical contribu-tions in the field of electrotechnology while in U.S. government service.

Jim McGarrity

EDITORSJim Schwank

Vice-Chairman of Publications

RESG NEWSRESG NEWS

40

All papers accepted for oral or poster presentation to the technical program will be eligible for publication in a special issue of the IEEE Transactions on Nuclear Science (December 2010), based on a separate submission of a complete paper. Each paper will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. All papers must be submitted on IEEE Manuscript Central. Instructions for submitting papers can be found at the Conference website www.nsrec.com. The deadline for submission of papers is the Friday before the Conference (July 16, 2010). Data workshop papers are published in a Workshop Record and are not candidates for publication in the IEEE Transactions on Nuclear Science. This process is managed by the Workshop chairman.

The review process for papers submitted to the Transactions is managed by a team of editors. To provide consistent reviews of papers throughout the year, this editorial team manages the review process for all radiation effects papers submitted to the Transactions throughout the year. The editorial team consists of a senior editor and six associate editors who are technically knowledgeable in one or more specializa-tions and are experienced in the publication process. If you would like to serve as a reviewer for the December issue of the Transactions or for radiation effects papers submitted throughout the year, please contact one of the editors. The editors for the 20010 NSREC are:

Jim Schwank, Senior EditorSandia National LaboratoriesEmail: [email protected]

Paul Marshall, Associate EditorConsultant, NASAEmail: [email protected]

Dennis Brown, Associate EditorIEEE NPSS Email: [email protected]

Christian Poivey, Associate EditorESA/ESTECEmail: [email protected]

Ron Pease, Associate EditorRLP ResearchEmail: [email protected]

Sylvain Girard, Associate EditorCEA/DIFEmail: [email protected]

Pascale Gouker, Associate EditorMIT Lincoln LaboratoryEmail: [email protected]

RESG NEWSRESG NEWS

41

ARE YOU A MEMBER OF IEEE?

NSREC PUBLICATIONS

RADIATION EFFECTS COMMITTEE

ANNUAL OPEN MEETING

Now is the time to join the Institute of Electrical and Electronics Engineers (IEEE) and the Nuclear Plasma Sciences Society (NPSS). Why? First of all, you’ll become a mem-ber of the largest professional engineering society in the world. About 60% of NSREC attendees are IEEE members. Full membership in IEEE costs $175. IEEE members receive access to a broad range of benefits, including a terrific insurance program, on line access to IEEE publications, and reduced rates at all IEEE sponsored conferences, including of course the IEEE NSREC and Short Course!

NPSS membership is $35. NPSS members receive a free subscription to NPSS News, and free on-line electronic access via IEEE Xplore to the IEEE Transactions on Nuclear Science (TNS) and the NSREC Data Workshop Record. Now members can search and view digital copies of all IEEE TNS papers on-line all the way back to the first IEEE NSREC in 1964. NPSS members get to vote in our NSREC elections, held at the annual open meeting on Thursday of the conference. What are you waiting for? Apply for membership at ewh.ieee.org/soc/nps/join-npss.html or visit the IEEE registration desk.

NSREC has three publications each year:

■ IEEE Transactions on Nuclear Science. This IEEE journal is the official archive of research papers presented at the NSREC Conference. A six issue/year print subscription is $1,600.00 (only $100.00 for IEEE/NPSS members).

■ Radiation Effects Data Workshop Record. Published each year in October, this IEEE proceedings has become the source for radiation test data on semi-conductor components. A print copy of the Workshop Record is available for $180 ($90 IEEE members).

■ NSREC Short Course Notebook. Published each July, this notebook contains tutorial presentations on the basic physics of radiation effects in circuits and systems. It includes the instructor’s notes and text, given to participants of the annual Radiation Effects Short Course. The Archive of Radiation Effects Short Course Notebooks 1980-2010 will be distributed on CD-ROM to all attendees at the 2010 NSREC Short Course. Additional cop-ies are available for $200 ($160 IEEE members). To obtain individual copies of this CD, please visit www.nsrec.com/editor.htm.

A complimentary copy of the 2010 IEEE Radiation Effects Data Workshop Record and the December special NSREC issue of the IEEE Transactions on Nuclear Science will be mailed to each NSREC technical session attendee. A copy of the NSREC Short Course Notebook will be given to short course attendees in Denver.

You are invited to attend the IEEE Radiation Effects Committee’s Annual Open Meeting on Thursday, July 22, from 5:30 – 7:00 PM in the Plaza Ballrooms E, F. All conference attendees and spouses are encouraged to attend. We will discuss the 2010 conference and future IEEE Nuclear and Space Radiation Effects Conferences. There will be an election for the Junior Member-at-Large on the Radiation Effects Steering Group. Nominations will be taken from the floor. All IEEE NPSS members present are eligible to vote. Refreshments will be provided.

AwardsAwards

42

2009 NSREC OUTSTANDING

CONFERENCE PAPER AWARD

2009 OUTSTANDING STUDENT PAPER AWARD

2009 OUTSTANDING DATA WORKSHOP

PRESENTATION AWARD

2010 RADIATION EFFECTS AWARD

2011 RADIATION EFFECTS AWARD

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAMD. F. Heidel, P. W. Marshall, J. A. Pellish, K. P. Rodbell, K. A. LaBel, J. R. Schwank, S. E. Rauch, M. Hakey, M. D. Berg, C. Castaneda, P. E. Dodd, M. R. Friendlich, A. D. Phan, C. M. Seidleck, M. R. Shaneyfelt, and M. A. Xapsos

Error Instability in Floating Gate Flash Memories Exposed to TIDM. Bagatin, S. Gerardin, G. Cellere, A. Paccagnella, A. Visconti, M. Bonanomi, and S. Beltrami

Single Event Effects Compendium of Candidate Spacecraft Electronics for NASAM. V. O’Bryan, K. A. LaBel, S. P. Buchner, R. L. Ladbury, T. R. Oldham, H. S. Kim, M. J. Campola, J.-M. Lauenstein, D. Chen, M. D. Berg, A. B. Sanders, J. A. Pellish, P. W. Marshall, C. J. Marshall, M. A. Xapsos, K. Kruckmeyer, M. Leftwich, and J. M. Benedetto

The winner of the 2010 Radiation Effects Award will be announced Tuesday morning, July 20. The purpose of the award is to recognize individuals who have had a sus-tained history of outstanding and innovative technical and/or leadership contribu-tions to the radiation effects community.

Nominations are currently being accepted for the 2011 IEEE Nuclear and Plasma Sciences Society (NPSS) Radiation Effects Award. The basis of the award is for indi-viduals who have: (1) a substantial, long-term history of technical contributions that have had major impact on the radiation effects community. Examples include bench-mark work that initiated major research and development activities or a major body of work that provided a solution to a widely recognized problem in radiation effects; and/or (2) a demonstrated long-term history of outstanding and innovative leader-ship contributions in support of the radiation effects community. Examples include initiation or development of innovative approaches for promoting cooperation and exchange of technical information or outstanding leadership in support of the profes-sional development of the members of the radiation effects community.

A cash award and plaque will be presented at the 2011 IEEE NSREC, Las Vegas, Nevada in July 2011. Nomination forms are available electronically in PDF Format or in Microsoft Word format at www.nsrec.com/nominate.htm. Additional information can be obtained from Mike Xapsos, Member-at-Large for the Radiation Effects Steering Group. Mike can be reached at 301-286-2263 or at [email protected].

Conference InformationConference Information

43

CONFERENCE LOCATION

ROOMS FOR SIDE MEETINGS

MESSAGES

TEL: 303-352-2417FAX: 303-626-2543

CONTINENTAL BREAKFAST AND COFFEE BREAKS

BUSINESS CENTER

The 2010 IEEE NSREC will be held at the Sheraton Denver Downtown Hotel, ideally located on the 16th Street Pedestrian Mall. Newly renovated and offering beautiful views of mountains and downtown, our host hotel is in the heart of Denver’s best shopping, dining and entertainment. With so much within walking distance, attendees may want to forego car rentals, thus avoiding rental and parking expense. Given its location, convenience and amenities, the Sheraton Denver Downtown Hotel presents pre-miere Conference accommodations.

Several meeting rooms are available for use by any registered conference attendee at the Sheraton Denver Downtown on a first come, first served basis. NSREC encourages side meetings to be scheduled at times other than during technical sessions. Contact ETC Services at 720-733-2003 or send an e-mail to [email protected] to make side meeting reservations before the conference. To make a side meeting reserva-tion during the conference, see the NSREC Registration Office staff on the Sheraton’s Concourse Level (below the lobby).

Notes: You must register for the conference before a side meeting room can be reserved! All audio/visual equipment and refreshments must be coordinated through the hotel and are the responsibility of the attendee hosting the meeting.

A message board for incoming messages will be located in the pre-function area outside the Plaza Ballroom during the conference. Faxes can be received through the hotel’s guest fax, but there must be a cover sheet stating the recipient’s name, noting the NSREC conference, and advising the total number of pages being sent. Some fees may apply and these can be accepted for hotel guests only.

The 2010 IEEE NSREC will provide continental style breakfasts and refreshments at breaks during the NSREC Short Course and Technical Sessions. Breakfast on Monday through Friday will begin at 7:30 AM for registered conference attendees only.

Located in the Lobby level of the Plaza Building in the Sheraton Denver Downtown Hotel, Penfield’s Business Center is open Monday through Saturday. Photocopy, FAX, Internet accessible computers, shipping/receiving and equipment rental services are available. Costs for use of Business Center’s services may be put on the room account or paid via credit card or cash. Website: www.sheratondenvershipping.com

Photo: Courtesy of Sheraton Denver Downtown

Registration and TravelRegistration and Travel

44

CONFERENCE REGISTRATION

ETC SERVICES, INC . 2254 EMERALD DRIVE

CASTLE ROCK, CO 80104

TEL: 720-733-2003 FAX: 720-733-2046

ETCSERVICES@ QWESTOFFICE .NET

ON-SITE REGISTRATIONLOCATION

ON-SITE REGISTRATION HOURS

CONFERENCE CANCELLATION

NSREC encourages pre-registration and offers a lower registration rate (“Early Registration”) if the payment is received by Friday, June 18, 2010. After that date, the “Late Registration” rates will apply.

There are three ways to remit advanced payment of registration and activity fees: 1) check made payable to “IEEE NSREC” in U.S. dollars and drawn on a U.S. bank, 2) U.S. Money Order, or 3) Mastercard, VISA, or American Express credit card.

Mail the conference registration form with your remittance to ETC Services, Inc. The registration form, with payment, should be mailed to arrive no later than seven days prior to the conference, or arrangements should be made to hand carry fees for on-site registration. Faxed registrations will be accepted with credit card payment. Telephone registrations will not be accepted. Registration via the Internet is possible with proper credit card information. Go to the NSREC website for on-line registration at www.nsrec.com.

On-site conference registration will take place at the Sheraton Denver Downtown at the “Plaza Registration Office” located on the Concourse Level below the hotel lobby. The elevators in both hotel towers show this floor as “C Level.” Pre-registered attend-ees may pick up registration packets at the Registration tables there.

Sunday, July 18 5:00 PM – 9:00 PM

Monday, July 19 7:30 AM – 4:00 PM 6:00 PM – 9:00 PM

Tuesday, July 20 7:30 AM – 5:30 PM

Wednesday, July 21 7:30 AM – 3:00 PM

Thursday, July 22 7:30 AM – 3:00 PM

Friday, July 23 7:30 AM – 10:00 AM

A $25 processing fee will be withheld from all refunds. Due to advance financial commitments, refunds of registration fees requested after June 18, 2010 cannot be guaranteed. Consideration of requests for refunds will be processed after the confer-ence. To request a refund, you must notify ETC Services by fax at 720-733-2046 or e-mail at [email protected].


45

HOST HOTEL INFORMATION

SHERATON DENVER DOWNTOWN

1550 COURT PLACEDENVER, CO 80202

USA

TEL: 303-893-3333FAX: 303-626-2543

WWW .SHERATON DENVERDOWNTOWN .

COM

HOTEL RESERVATIONS

The Sheraton Denver Downtown Hotel and its professional staff meet all the essential elements in hotel refin-ery and capability. Excellent service and exceptional comfort are the results of the hotel’s recent $70 million renovation. Along with beautiful interior design, the Sheraton has spa-cious meeting and exhibit areas well suited to our 2010 Conference. Hotel amenities include two restaurants, two cocktail lounges, well-equipped 24-hour fitness center, outdoor heated pool, concierge, business center, room service, free WIFI in the lobby, and Club Level.

The guest rooms now offer the following: individual climate control, flat-screen TV with pay movies, wireless and high-speed Internet (at a fee), work desk with ergo-nomic chair, AM/FM radio, coffee maker, hair dryer, iron and ironing board, dual-line speaker phone with voice mail, one king or two queen Sheraton Sweet Sleeper beds and room service. On the Club Floor, the club rooms have some additional ame-nities such as bathrobes and upgraded toiletries, as well as access to the Club Lounge that offers a continental breakfast in the morning on Monday through Friday and hors d’oeuvres/cash bar in the evening on Sunday through Thursday.

The negotiated group rate for a standard room is $178.00 + tax for single or double occupancy for all attendees. There is not a separate U.S. government block because this rate is within an allowable percentage above the per diem when attending a conference. Rooms on the Club Level (concierge club privileges) are at the rate of $203.00 + tax for single or double occupancy. There is no additional charge for chil-dren 18 years of age and under when sharing a room with an adult and utilizing existing beds. Each third and fourth person in the room (19 years of age and older) will be charged $25.00 + tax per night.

Reservations can be made by calling Sheraton Reservations toll-free at 888-627-8405 within the U.S. or Canada. You can also call the hotel directly at 303-893-3333. Ask for the IEEE NSREC block to ensure that you are getting our special rates. OR you can book through the Internet on the following website: http://www.starwoodmeeting.com/Book/ieeensrec. Enter your dates and then follow the prompts to complete your reservation.

All rooms must be guaranteed with a credit card. The cut-off for IEEE NSREC reser-vations is at 5:00 PM Mountain Time on June 18, 2010. Once the room block has been filled OR after the cut-off date (whichever comes first!), room accommodations will be confirmed on a space available basis and the room rate may be higher. Early reserva-tions are strongly suggested!

Please be certain to notify the hotel of any change to your arrival or departure dates. When you check into the hotel, be sure to verify your departure date.

Photo: Courtesy of Sheraton Denver Downtown

46


AIRPORT AND TRANSPORTATION

INFORMATION

AIRPORT SHUTTLE

PARKING

Denver International Airport (code DEN) is 23 miles (25 - 30 minutes) east of the Sheraton Denver Downtown. The current taxi rate is a set amount of $51.00 one-way plus a $3.50 gate fee for any trips originating from the airport.

Super Shuttle has scheduled shuttle service between the Denver International Airport and the downtown hotels. They have offered the NSREC a special group rate of $18.00 per person one-way or $32.00 per person round trip in a shuttle van. ExecuCar (a division of Super Shuttle) has private vehicles that operate by reservation and they’ve offered special rates for Lincoln towncars or large SUVs. All reservations must be made in advance by calling toll free 1-800-BLUEVAN, or by visiting the web-site: www.supershuttle.com/default.aspx?GC-5XPKZ. To get the special group rate, use the group code 5XPKZ. In order to get the special NSREC RATE, you must prepay by credit card. A confirmation will be sent to you by e-mail.

Note: There have been a few problems with their website pertaining to the dis-counted rate. We suggest calling the toll free number for reservations to be assured of getting the discount.

Upon arrival to the airport, take the train from the concourse to the Main Terminal and continue up the escalator to Baggage Claim to pick up your luggage. Proceed to the Super Shuttle counter in the Main Terminal to check in and get your ticket and directions to the vehicle loading zone.

For departure from the hotel, meet the van at the hotel entrance and give the driver the confirmation number for your return trip. Shuttles run every 15 minutes from 5:00 AM to 5:00 PM and after that, by reservation.

The Sheraton Denver Downtown has underground self-parking at $23.00 per over-night (with in/out privileges) and valet parking at $28.00 per overnight, (with in/out privileges). Both are chargeable to your room account. For non-hotel guests, short term rates are available as follows. Daytime valet is 0 - 4 hours = $18.00, 4 - 8 hours = $23.00, 8 + hours = $28.00. Daytime self-parking is $3.00 per half hour, $23.00 maxi-mum daily rate.

Not far from the hotel, there are other parking options that may be less expensive as long as you are willing to walk one to five blocks to/from the hotel.


47

RENTAL CAR DISCOUNT

HERTZ RENT-A-CARHERTZ CV#03S20005

A rental car may not be necessary in downtown Denver but may be convenient for an extended trip or for traveling with family/larger groups.

Hertz has been selected as the official car rental agency for the 2010 NSREC and is offering discounted rates for conference attendees. For reservations and information, call Hertz at 800-654-2240 and mention CV#03S20005 or use the Hertz website at www.hertz.com. The special conference rates will be available from July 12, 2010, to July 30, 2010. The rates are valid at any Denver location as long as pick-up and return are at the same location. Note also that Hertz has a rental office conveniently located about five blocks from the Sheraton Denver Downtown.

Car class Car group Daily Weekly Weekend (daily)

Economy 2 door A 41.00 169.00 27.00Compact 4 door B 45.00 181.00 30.00Midsize 2/4 door C 51.00 191.00 31.00Standard D 55.00 204.00 33.00Fullsize 4 door F 57.00 221.00 35.00Premium G 62.00 289.00 43.00Luxury I 79.00 359.00 79.00Standard SUV -4WD/AWD L 72.00 359.00 67.00 Mini-van R 72.00 359.00 62.00

Rental cars are subject to availability so advance reservations are recommended. When making reservations, the agent will check to see if this is the best rate for you at the time. Government surcharges, taxes, airport related fees, vehicle licensing fees and optional items, such as refueling or additional driver fees, are extra. Renters must meet Hertz age, driver and credit requirements. Additional restrictions, terms and conditions may apply.

Industrial ExhibitsIndustrial Exhibits

48

EXHIBIT HALL HOURS

The NSREC 2010 Industrial Exhibits will feature the leading worldwide suppliers of radiation hardened products, related materials, and services. This will be an excellent opportunity for key suppliers, technical engineers and managers to meet and discuss the needs and solutions for electronics used in space vehicles, military electronics, and applications requiring radiation tolerance in harsh environments.

The NSREC 2010 Industrial Exhibits will be in the Sheraton Plaza Foyer on Tuesday and Wednesday. You can’t miss it, as this is a highly visible location in front of the Plaza Ballroom and along the path to the entrance of the technical sessions. A spa-cious rectangular layout will allow for high traffic flow to all areas of the Exhibit plus many areas to sit down and relax. Conference breaks will be hosted in the Exhibit Area on Tuesday and Wednesday. Due to popular demand, the number of available booths has been increased this year, setting an NSREC record.

Tuesday evening, the exhibitors will host the Industrial Exhibits Reception, featur-ing complimentary drinks in the Exhibit Area and complimentary dinner buffet in and around the Exhibit area. The Reception is open to all NSREC attendees and their guests.

NOTE: Children under 16 must be accompanied by an adult in the Exhibits.

For more information, or reserving a booth, contact:

Kirby Kruckmeyer Phone: 408-721-3548National Semiconductor Email: [email protected]

Or visit the NSREC 2010 Exhibitors website: www.nsrec.com/exhibit.htm

Tuesday, July 20 10:00 AM - 4:00 PM 10:15 AM Morning break 2:35 PM Afternoon break 6:00 PM - 10:00 PM 6:00 PM Cocktails 7:00 PM Buffet dinner 9:00 PM Raffle drawing

Wednesday, July 21 7:30 AM - 1:30 PM 7:30 AM Breakfast 10:15 AM Morning break

Kirby Kruckmeyer Industrial Exhibits Chairman

7

8

9

10

11

12

Entrance

NSREC INDUSTRIAL EXHIBITS

SHERATON PLAZA FOYER

Industrial ExhibitsIndustrial Exhibits

49

Please check our website (www.nsrec.com) for a current listing of companies exhibiting at 2010 NSREC.

Organization Internet Site Booth #

3DPlusUSA www.3D-plus.com 20

Actel actel.com/aero 43

AeroflexColoradoSprings www.aeroflex.com/HiRel 46,47

AFRL/RVSESpaceElectronicsBranch www.kirtland.af.mil/afrl_vs 48

ASICADVANTAGE www.asicadvantage.com 22

Atmel www.atmel.com 31,32

BAESystems www.baesystems.com 25

BoeingCompany wwww.boeing.com/ssed 40

C-MACMircoTechnology www.cmac.com 1

CORWILTechnologyCorporation www.CORWIL.com 7

ConfigurableSpaceMicrosystemsInnovationsandApplicationsCenter

www.cosmiac.org 2

CraneAerospace&Electronics www.craneae.com 10

DefenseMicroelectronicsActivity www.dmea.osd.mil 11

Honeywell www.honeywell.com 21

InternationalRectifier hirel.irf.com 23

Intersil www.intersil.com 53

ISDEVanderbilt isde.vanderbilt.edu 51

J.L.Shepherd&Associates jlshepherd.com 12

LawrenceBerkeleyNationalLaboratory http://cyclotron.lbl.gov 16

MaxellTechnologies,Inc. www.maxwell.com 8

Micro-RDC www.micro-rdc.com 39

MicropacIndustries www.micropac.com 45

ModularDevices www.mdipower.com 44

M.S.KennedyCorporation www.mskennedy.com 30

NASAElectronicPartsandPackaging(NEPP)Program

http://nepp.nasa.gov/ 15

NationalReconnaissanceOffice http://Dii.westfields.net 34

NationalSemiconductor www.national.com/analog/space 50

NorthropGrumman www.northropgrumman.com 42

NSWCCrane www.crane.navy.mil 4

PeregrineSemiconductorCorp. www.psemi.com 52

RadiationAssuredDevices wwww.radassured.com 49

RobustChipInc. www.robustchip.com 27

SandiaNationalLaboratories www.sandia.gov/mstc 5

SEMICOACORPORATION www.semicoa.com 3

SILVACOINC. www.silvaco.com 13

STMicroelectronics www.st.com 35

SVAD/WSTC 26

Teledyne www.teledynemicro.com 14

TexasA&MUniversity-CyclotronInstitute cyclotron.tamu.edu/ref 9

TriadSemiconductor www.triadsemi.com 37

UltraCommunications www.utlracomm-inc.com 28

ViASIC,Inc. www.viasic.com 38

Xilinx www.xilinx.com 19

EXHIBITORS

23

22

21

20

19

17

44

45

47

46

42

43

49

48

1

2

3

4

5

28

27

26

25

39

40

51

50

37

38

53

52

15 1613 14

35 34 33 32 31 30

Entrance

51

2010 IEEE NSREC Technical Sessions andShort Course Registration Form

LatefeeREQUIREDifpaymentreceivedafterJune18,2010.

Early LateIEEE Member *

ShortCourse $260 $310 $________TechnicalSessions $425 $510 $________

Non-IEEE MemberShortCourse $325 $385 $________TechnicalSessions $530 $635 $________

Full-Time Students who are IEEE Members *ShortCourse $120 $310 $________TechnicalSessions $120 $510 $________

TOTAL AMOUNT ENCLOSED: $________

REGISTRATION FEES (in U .S . dollars)

Name__________________________________________Last Name First Name Middle Initial

Nametoappearonbadge _________________________________

Company/Agency_________________________________

MailingAddress__________________________________

________________________________________________

City____________________________________________

State________________ZipCode__________________

Country________________________________________

TelephoneNumber_______________________________

FaxNumber_____________________________________

E-mailAddress___________________________________

IEEE MEMBERSHIP

IamanIEEEMember. __________________________ Membership Number

IamnotaMember,butIwishtojointheIEEE.

Non-members must register at the non-member rate.

CANCELLATIONS

A$25processingfeewillbewithheldfromallrefunds.Duetoadvancefinancialcommitments,refundsofreg-istrationfeesrequestedafterJune18,2010cannotbeguaranteed.Considerationofrequestsforrefundswillbeprocessedaftertheconference.

Mail or Fax this form and your remittance(payable to IEEE NSREC) to:

ETC Services, Inc .2254 Emerald Drive

Castle Rock, CO 80104

720-733-2003 Fax: 720-733-2046

EnclosedisacheckormoneyorderinU .S . DOLLARS ONLY,drawnonorpayablethroughaU.S.bank.Payableto:IEEE NSREC

Chargeregistrationfeestomycreditcard(U.S.dollars):

AmericanExpress MasterCard VisaCard ExpirationNo.__________________________ Date_________

PrintedName ________________________________

Address_____________________________________

Address_____________________________________

Signature ____________________________________

Ifyourcompanyoragencyisgoingtopaybycheckatalaterdate,please do not complete the credit card portion of this form . Only one form of payment is needed .

PAYMENT OF FEES

*ToobtainIEEErates,youmustprovideyourIEEEnumberonthisform.

53

2010 IEEE NSRECActivities Registration Form

ACTIVITY FEES (in U .S . dollars)

EnclosedisacheckormoneyorderinU .S . DOLLARS ONLY,drawnonorpayablethroughaU.S.bank.PayableTo:IEEE NSREC

Chargeregistrationfeestomycreditcard(U.S.dollars):

AmericanExpress MasterCard VisaCard ExpirationNo.__________________________ Date_________

PrintedName ________________________________

Address_____________________________________

Address_____________________________________

Signature ____________________________________

PAYMENT OF FEES

ConferenceParticipant______________________________________

Company/Agency_________________________________

Address________________________________________

City____________________________________________

State________________ZipCode__________________

Country________________________________________

TelephoneNumber_______________________________

FaxNumber_____________________________________

AccompanyingPersons_________________________________________Name

Pleaselistagesforchildrenunderage21only

_________________________________________Name Age

_________________________________________Name Age

_________________________________________Name Age

_________________________________________Name Age

CANCELLATIONS

Toencourageadvancedregistrationforconferencesocialactivities,wewillrefundallactivityfeesforconferenceattendeesand/ortheircompanionswhoforanyreasonareunabletoattendtheconference.Ifyourplanschangeafterthisformissubmittedandyouwouldliketorequestarefund,youmustnotifyETCServicesbyemailatetcservices@qwestoffice.netorFAXat720-733-2046nolaterthanJuly14ornotifytheconferenceregistrationdeskwhenpickingupyourregistrationmaterials(but by no later than 3 business days before the scheduled activity).

Mail or Fax this form and your remittance(payable to IEEE NSREC) to:

ETC Services, Inc .2254 Emerald Drive

Castle Rock, CO 80104

720-733-2003 Fax: 720-733-2046

Late fee REQUIRED if payment received after June 18, 2010 .Westronglyencourageearlyregistration;thenumberofticketsavailableforeacheventislimited.Childrenmustbeaccompaniedbyanadultduringalltoursandsocialevents.

Number Total Early Late Attending Cost

Best of Boulder: Tuesday, July 20OptionaltourinBoulder:NCAR__yes__no

Adult $25 $30 ______ $______Child(age4-12) $15 $20 ______ $______Child(age0-3) $0 $0 ______

“A Night at the Museum”: Wednesday, July 21Adult $45 $65 ______ $______Teen(age13-20) $35 $50 ______ $______Child(age5-12) $30 $45 ______ $______Child(age0-4)* $0 $0 ______

*Nomealprovided

Georgetown Loop Railroad Tour†: Thursday, July 22Adult $35 $40 ______ $______Child(age3-15) $25 $30 ______ $______Child(age0-2)** $0 $0 ______

**Lapchildnosnackprovided†Minetourisnotrecommendedforchildrenunder6

TOTAL AMOUNT ENCLOSED: $________

Social ProgramSocial Program

55

DENVER, COLORADO

SUNDAY, JULY 186:00 TO 9:00 PM

SHORT COURSE RECEPTION

The Sheraton Denver Downtown, located on the 16th Street Pedestrian Mall, offers its guests access to the best of Denver’ local attractions. The 16th Street Mall is Denver’s hub of shopping, dining and entertainment that stretches for 16 blocks through the heart of downtown. An environmentally friendly free shuttle service stops at every intersection to transport shoppers to more than a mile of Denver’s best restaurants and shops. The hotel is also within walking distance of the Denver Art Museum, the United States Mint, and just minutes from Coors Field and historic LoDo (Lower Downtown Denver). Kids and adults alike may also enjoy visiting Elitch Gardens, Denver’s famed amusement park, and the Downtown Aquarium.

This year’s Committee has planned a social program designed to give its attendees and guests opportunities to discover both the city of Denver and its nearby moun-tains and towns during peak season in Colorado. Join us for a tour through Celestial Seasonings Tea Factory, a trip to the famed Pearl Street in Boulder, a railroad ride through historic Georgetown and a “Night at the Museum” at the Denver Museum of Nature and Science as we experience life at 5, 280 feet above sea level.

Children must be accompanied by an adult during all tours and social events.

Please join us for complimentary refreshments in the Plaza Ballroom on the Concourse Level in the Sheraton Denver Downtown Hotel. The reception, which is open to short course attendees and registered guests, is a great time to meet old friends and make new ones. The registration desk for the conference will be open from 5:00 to 9:00 PM.

“Welcome to Denver, the Mile High City. We hope that you come and enjoy the richness of this classic mountain west metropolis from its spectacular views to its easy sophistication. I cannot think of a better place for our conference.”

Hugh BarnabyArizona State University, Local Arrangements Chairman

Denver skyline from City Park Golf Course Photo: Denver Metro Convention & Visitors Bureau

Cat Brant, University of Colorado, Laboratory for Atmospheric and Space Physics (LASP), Local Arrangements Assistant


56

TUESDAY, JULY 209:15 AM TO 3:45 PM

BEST OF BOULDERTOUR AND SHOPPING

The NSREC companion’s trip to beautiful Boulder will begin with a morning tour of Celestial Seasonings followed by lunch on your own at Pearl Street Mall. After lunch, there are two options. One option is to attend a tour of NCAR; the other option is to remain on Pearl Street for the afternoon. Guests who register to attend NCAR will have approximately one hour at Pearl Street for a quick lunch before boarding the bus to NCAR. Guests who do not register for NCAR will have approximately three hours on Pearl Street Mall for a more leisurely lunch and extensive shopping on the Mall.

Celestial Seasonings Tea Factory is the world’s most advanced tea production plant. Tours through the factory offer an insider’s look at the craft of processing every flavor of the delectable 100% natural teas. Experience complimentary tea tasting, browse the extensive display of original artwork in the gallery and consider purchasing specialty teas and gifts at the in-house Tea Shop. www.celestialseasonings.com

Celestial Seasonings is ADA accessible. Children must be of 5 years of age or older to go on the factory portion of the Celestial Seasonings tour.

Surrounded by the Flatiron Mountains, Pearl Street Pedestrian Mall lies in the heart of Boulder. Composed almost entirely of locally owned businesses, the Mall serves as a historic district, a stage for street performers and a gallery of public art. Colorado residents and tourists from all over the globe enjoy the open-air marketplace lined with cafes, boutiques and gardens. NSREC companions will find a wide variety of lunch menus including on-the-mall cart-vendors, café style patio seating and formal indoor dining. Pearl Street Mall is ADA accessible; however, individual establish-ments may not be fully ADA accessible. A list of ADA establishments will be available at the registration booth. www.boulderdowntown.com

The National Center for Atmospheric Research (NCAR) conducts studies of the Earth’s climate, air chemistry, space weather and several other similar areas of sci-ence. Visitors to the Center will have the opportunity to tour the world-famous, sensational Mesa Lab Building, designed by I.M. Pei. In addition, the tour features “Connections,” a short film introducing atmospheric research, opportunities to exam-ine the original Cray computer of 1977, trek the Walter Orr Roberts Weather Trail and have fun at the hands-on exhibits within NCAR. Spectacular sights of Boulder and the Flatiron Mountains are an additional facet to the tour. www.ncar.ucar.edu All three destinations are located in Boulder. Both Celestial Seasonings Tea Factory and the National Center for Atmospheric Research are short distances from Pearl Street Mall.

Bus Schedule:9:15 AM depart Sheraton Hotel for Celestial Seasonings Tea Factory.11:30 AM depart Tea Factory for Pearl Street Mall. 1:15 PM depart Pearl Street for NCAR (pre-registrants only).2:45 PM depart NCAR to return to Pearl Street.3:00 PM depart Pearl Street with all NSREC companions, returning to the Sheraton Hotel by approximately 3:45 PM.

Downtown BoulderPhoto: Courtesy of Bill Brant

NCAR’s Mesa LaboratoryThe Mesa Laboratory of the National Center for Atmospheric Research, located atop Table Mesa at the west end of Boulder, Colorado, is recognized as one of the major works of architect I.M. Pei. Completed in 1966, the laboratory strikes many viewers as futuristic, but its design was strongly influenced by the ancient Indian cliff dwellings of Mesa Verde National Park in Colorado. With walls of reinforced concrete colored by locally quarried stone, the building harmonizes rather than competes with its dramatic backdrop, the monolithic sandstone slabs called the Flatirons. The laboratory’s pristine mesa-top setting is maintained as a nature preserve.Photo: University Corporation for Atmospheric Research

Join us for the NSREC Industrial Exhibits Reception, hosted by your NSREC exhibi-tors. All NSREC attendees and their regis-tered guests are invited for complimentary drinks and buffet. Drinks will be served in the Exhibits area in the Sheraton Plaza Foyer, (down the escalator from the hotel lobby), followed by the full buffet dinner in and around the Exhibit area and the Plaza Ballroom where the Technical Sessions are held. All registered technical session attend-ees should be sure to visit the booths to participate in the raffles. NSREC attendees and guests, remember to wear your badges for entrance to the Reception.

Please join us for NSCREC’s own “Night at the Museum,” a private party at the Denver Museum of Nature and Science (DMNS). Hors d’oeuvres and cocktails will be provided and a full dinner buffet will be served in the museum’s atriums. Visit with friends and colleagues as you enjoy the museum’s exhibits throughout the evening.

One of the largest museums of its kind in the nation, the DMNS is quickly becoming the world’s best nature and science museum, displaying hands-on activities; a personalized, interactive exhibit of the human body; world-renowned dioramas; ancient dinosaur bones; and fantastic gems and minerals.

There will be ample time to make the evening your own as you explore the variety of award winning exhibits DMNS offers. Travel through time in the Prehistoric Journey, uncover the treasure trove of information in Egyptian Mummies, follow a mineshaft into silver mines where caverns glisten with crystals and stalac-tites in Coors Mineral Hall, and wander expansive habitats from Alaska to Argentina or Africa to Australia in Wildlife Exhibits. Last but not least, you may visit Expedition Health to learn about YOUR human body. Be sure to enjoy this experience before 8:00 PM, which is an earlier closing time than the other exhibits.

Buses will be departing the Sheraton between 6:15 and 6:45 PM to arrive at the DMNS. Hors d’oeuvres and refreshments will be served as you explore the museum. Dinner will begin at 7:30 PM. The museum is ADA accessible. Buses will begin departing the museum and return-ing to the Sheraton at 9:30 PM. The last bus leaves DMNS at 10:30 PM.

Photo: Courtesy of Dave Bushmire


57

TUESDAY, JULY 206:00 TO 10:00 PM

INDUSTRIAL EXHIBITS RECEPTION

6:00 PM COCKTAILS7:00 PM BUFFET

WEDNESDAY, JULY 216:15 TO 11:00 PM

“A NIGHT AT THE MUSEUM”

DENVER MUSEUM OF NATURE AND SCIENCE

The Allosaurus and Stegosaurus fossils at the Denver Museum of Nature & Science were both discovered in Colorado.Photo: © DMNS

The Hall of Life at the Denver Museum of Nature & Science gives visitors a chance to learn about health and wellness through interactive displays.Photo: © DMNS

Photo: © DMNS


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THURSDAY, JULY 229:00 AM TO 4:00 PM

GEORGETOWN LOOP RAILROAD TOUR

AEROBICS

ACTIVITIES CANCELLATION POLICY

Colorado’s rich mining history inspired the activities of this event which provides guests with a train ride through a mountain canyon and a walking tour of a silver mine tunnel, followed by a more civilized visit to a restored mining town.

The Georgetown Railroad Loop is a 3-foot narrow gauge engineering marvel con-structed over 120 years ago to connect Georgetown to its neighboring mining town Silver Plume. Riding over the rugged terrain in enclosed or open cars, NSREC pas-sengers of the diesel locomotive will enjoy light refreshment while scaling the 640 feet of twists and turns. This rare opportunity to take in spectacular views of Colorado’s wildlife and the canyon itself, is enhanced by traveling over Clear Creek on Devil’s Gate High Bridge. At the train park, guests may explore depots, mines and other notable buildings as well as stop in the gift shop for refreshment and a fine selection of unique, train-themed items. Elevation 8519 feet.

The Lebanon Silver Mine is located halfway along the railroad route. Visitors exit the train to take a walking tour 500 feet into a mine tunnel where natural silver veins are found in the rock walls and an overview of early-day mining is presented.

The mine tour is not recommended for anyone experiencing difficulty walking on rocky/uneven terrain or children under 6 years of age. Although the train is ADA accessible, the mine tour is not. Guests will spend approximately two hours in Idaho Springs, a historic mining town where gold was first discovered in Colorado. A wide selection of restaurants offers many choices for lunch within the quaint atmosphere of the old mountain town as Idaho Springs presents its Gold Rush history and modern day recreation. Idaho Springs is not completely ADA accessible. Elevation 7125 feet.

NSREC tourists will be provided with refreshment (water and a snack) on the train, but we strongly encourage you to consider personal dietary needs for yourselves and your children with additional food/drink, since the lunch break is not scheduled until 1:20 PM in Idaho Springs. Comfortable walking shoes and casual clothing are appropriate for this event. Layered clothing or a lightweight jacket is recommended for additional warmth in the mine where the temperature is 44 degrees Fahrenheit.

9:00 AM depart the Sheraton for Georgetown1:00 PM depart Georgetown for Idaho Springs3:20 PM depart Idaho Springs for arrival at the Sheraton at 4:00 PM

In keeping with a healthy tradition, our own certified aerobic instructor, Dave Bushmire, will be conducting morning fitness classes. Meet at the Sheraton Concourse Level in the Governor’s Square Room 11 from 6:30 to 7:30 AM, Tuesday, Wednesday and Thursday.

To encourage advance registration for conference social activities, NSREC will refund all activity fees for conference attendees and/or their companions who for any reason are unable to attend the conference. If your plans change after your activities registration form is submitted, simply request a refund by notifying ETC Services by fax or e-mail no later than July 14, 2010. Fax: 720-733-2046. E-mail: [email protected]

Georgetown Loop Railroad Photo: Georgetown Loop Railroad

Lebanon Silver MinePhoto: Georgetown Loop Railroad

Local ActivitiesLocal Activities

59

GENERAL INFORMATION

16TH STREET PEDESTRIAN MALL

LODO

DENVER PERFORMING ARTS COMPLEX

LARIMER SQUARE

UNITED STATES DENVER MINT

Spectacular scenery, rich history and modern day sensations continue to summon visitors to Denver and its surroundings. Artists, outdoorsmen, shoppers, beer aficio-nados, and sports fans gather in this fair city to engage in some of the finest entertain-ment and attractions. Allow the provided websites following each description of main attractions in and around Denver to give you a virtual tour of Denver and direct you to your personal favorite destinations. www.denver.org

WALKING DISTANCE (OR A FREE SHUTTLE RIDE) AWAY FROM THE SHERATON DENVER DOWNTOWN

The most up-to-date couture, lavish dining and outdoor entertainment compose the grand walkway outside our host hotel. Most recently, the Mall has gone cyber, offering visitors wireless Internet anywhere along the path. Built in 1982, the mall is a pedestrian promenade of red-and-gray granite that runs through the center of down-town lined with outdoor cafes, renovated historic office buildings, sparkling glass-walled skyscrapers, shops, restaurants and department stores. Numerous fountains and plazas offer a variety of daily special events and entertainers. Free shuttle buses cruise the mile-long Mall every 90 seconds. Denver Convention & Visitors Bureau Visitor Information Center is located at 16th & California on the 16th Street Mall. www.denver.com/16th-street-mall Architectural designs dating back to the Victorian era equip daytime tourists with insight into Colorado history’s great builders and engi-neers. Non-stop action by night lures passionate food, wine and music critics inside the doors of the 28-square-block neighborhood. www.lodo.org For members of the audience who appreciate thespians and musicians, this is the place to be. Various musical and acting reper-toires draw crowds to the operas, symphonies, comics and musicals on stage at the Complex. www.denvercenter.org

Not just another venue for shops and restaurants, Larimer Square is an event in and of itself as Denver’s oldest block. Antique gas lamps light the path to the trendiest fashions and fare. www.larimersquare.com Only Fort Knox houses a bigger gold bouil-lon than the Denver Mint. With the capacity to make 20 billion coins each year, security at the Mint is so strict, that you’ll leave your lipstick home with your purse. Along with no entrance fee, there’s no entry with purses, cameras, pens, lipstick, strollers, diaper bags or cell phones. www.colorado-for-free.com/ FreeThingsToDoColorado/DenverMintTour

Outdoor Cafe near Coors Field in historic LoDo districtPhoto: Stan Obert for Denver Metro Convention & Visitors Bureau

Horse-drawn carriages offer rides through the heart of downtown Denver Photo: Denver Metro Convention & Visitors Bureau


60

DENVER ART MUSEUM

CHERRY CREEK

ELITCH GARDENS AMUSEMENT PARK

DENVER BOTANIC GARDENS

This 356,000 square foot museum complex is inter-nationally recognized as a family friendly environment and has received critical acclaim for art appreciation through interactive activi-ties. Call ahead for tickets to special exhibits such as Tutankhamun: The Golden King and the Great Pharaohs. 720-865-5000. www.denverartmuseum.org

A SHORT DRIVE FROM THE SHERATON DENVER DOWNTOWN

If you’ve shopped 16th Street, Pearl Street and Larimer Square and still haven’t dropped, Cherry Creek Shopping Center may be your next destination. More than 169 shops, restaurants and services exist for the sake of your pleasure at this lavishly appointed, world-class shopping center. www.shopcherrycreek.com

Celebrate 120 years of thrill-ing rides and water tubing. Gather the family and invite some friends to join in the fun at the theme park’s Island Kingdom Water Park for a true Rocky Mountain High!www.elitchgardens.com

Education and research or olfactory pleasures and a sight to behold draw fans to these gardens. Relax and take in the allure of the Boettcher Memorial Tropical Conservatory at the York Street location. The tropical forest is revealed in banyan trees, cloud forest orchids and chocolate, banana and coffee plants. www.botanicgardens.org

Elitch gardens is the only downtown amusement park in the country. People of all ages can get the best of two worlds all in one place – a family theme park and Island Kingdom Water Park in downtown Denver. There’s something for everyone from thrilling coasters and family rides, to fun-filled shows and beautiful gardens.Photo: Denver Metro Convention & Visitors Bureau

Denver Art Museum’s Hamilton BuildingThe Frederic C. Hamilton Building at the Denver Art Museum opened on Oct. 7, 2006, doubling the size of the facility. It was designed by world renowned architect, Daniel Libeskind. Libeskind is known for his design of the Jewish Museum in Berlin and the War Museum in Manchester, England and is the master planner for the new World Trade Center space in New York City. The Hamilton Building is Libeskind’s first building in the United States.Photo: Denver Metro Convention & Visitors Bureau

Section HeadingSection Heading

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61

DENVER ZOO

DOWNTOWN AQUARIUM

REI DENVER FLAGSHIP STORE

JUST OUTSIDE THE CITY

OTHER COLORADO ATTRACTIONS

WEATHER AND CLOTHING

In one word – extraordinary. 35,000 animals of over 650 species are kept and cared for at this zoological park. Enjoy a rare look at exotic animals such as amur leopards, king cobras, black rhinos, coral reef fish, elephants, zebras, vampire bats and gorillas. Who knew shingleback skinks could crush snail shells with their powerful jaws or stick out their blue tongue and hiss?www.denverzoo.org Denver may be a landlocked state but there’s plenty of marine life to see at the Downtown Aquarium. More than one million gallons of fresh and seawater exhibits offer a fascinating view of marine ecosys-tems from around the planet. Take a self-guided tour and set your own pace as you view more than 500 species of animals including sharks, eel, grouper, rainbow fish, trout and more. www.aquariumrestaurants.com/downtownaquariumdenver/ flash_content/index.html

The outdoor adventure begins in this 1901 Tramway building turned into an equip-ment paradise. Show your skill on REI’s 47-foot indoor, climbing pinnacle, pick up an extra pair of sunglasses or a new GPS. Rent some bikes fitted by the REI pros and explore the bike trails that run along the South Platte or Cherry Creek. www.rei.com/stores/18

Red Rocks Amphitheater (www.redrocksonline.com/)Dinosaur Ridge (www.frontrangeliving.com/outdoors/DinosaurRidge.htm)Buffalo Bill’s Grave (www.buffalobill.org/)

Estes Park (Rocky Mountain National Park); Colorado Springs (Pikes Peak; U.S. Olympic Training Center; Garden of the Gods Park; U.S. Air Force Academy); Aspen (Snowmass, Maroon Bells); Central City and Blackhawk; Mount Evans; Breckenridge

Denver’s climate is mild with low relative humidity. Summer days offer warm, sunny mornings and bright, blue skies frequently followed by afternoon thunder-storms and cool, comfortable evenings. Colorado boasts over 300 days of sunshine per year; a mere 15 minutes of sun exposure at Denver’s high elevation equates one hour at sea level, so be prepared with sunglasses, sun protection and lip balm. The best way to plan for the altitude in Denver is to drink plenty of water before arrival to the city and consume twice the amount of water as you would consume at sea level. Lightweight, layered clothing is appropriate for Denver and its outskirts, as the weather may change significantly within each and every day.

Downtown AquariumPhoto: Randy Brown for Denver Metro Convention & Visitors Bureau

2010 Conference Committee2010 Conference Committee

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General ChairJoseph BenedettoRadiation Assured Devices719-531-0800Fax: [email protected]

Technical ProgramJeffrey BlackVanderbilt University615-322-3758Fax: 615-343-9550jeffrey.d.black@ vanderbilt.edu

Local ArrangementsHugh BarnabyArizona State University480-727-0289Fax: [email protected]

Short CourseRon LacoeThe Aerospace Corporation310-336-0118Fax: [email protected]

PublicityTeresa FarrisAeroflex Colorado Springs719-594-8035Fax: [email protected]

AwardsLew CohnNaval Research Laboratory202-404-4488, 703-808-4250Fax: [email protected]

Industrial ExhibitsKirby KruckmeyerNational Semiconductor408-721-3548Fax: [email protected]

FinanceDennis ThompsonITT Geospatial Systems 585-269-6522Fax: [email protected]

Official ReviewersOfficial Reviewers

63

Philippe Adell, JPL

Greg Allen, JPL

Anthony Amort, Boeing

Marta Bagatin, University of Padova

Joseph Barak, Soreq

Robert Baumann, TI

Joe Benedetto, RAD

Melanie Berg, NASA GSFC

Bharat Bhuva, Vanderbilt University

Dolores Black, Vanderbilt University

Ewart Blackmore, Triumf

Jerome Boch, University of Montpellier

Younes Boulghassoul, ISI

Sebastien Bourdarie, ONERA

Benoit Brichard, SCK-CEN

Stephen Buchner, NRL

Manual Cabanas-Holmen, Boeing

Dave Chen, IBM

Xiao Jie Chen, Radiation Monitoring Devices, Inc

Harry Chow, Boeing

Andrew Chugg, MBDA

Susan Crain, The Aerospace Corp.

John Cressler, Georgia Tech

Paul Dodd, SNL

Sophie Duzellier, ONERA

Clive Dyer, Qinetiq

Lydell Evans, NSWC-Crane

Veronique Ferlet-Cavrois, ESA/ESTEC

Cameron Fisher, Mobile Semiconductor

Dan Fleetwood, Vanderbilt University

Chuck Foster, FCS

Mike Fritze, DARPA

Ken Gerst, Boeing

Greg Ginet, MIT-LL

Sylvain Girard, CEA

Vincent Goiffon, University of Toulouse

Michael Gordon, IBM

Pascale Gouker, MIT-LL

Steve Guertin, JPL

Craig Hafer, Aeroflex Colorado Springs

Richard Harris, JPL

Dave Heidel, IBM

Dave Hiemstra, MDA

Gordon Hopkinson, Surrey

Christina Howe, Evansville University

Farokh Irom, JPL

Allan Johnston, JPL

Insoo Jun, JPL

Wousik Kim, JPL

AJ Kleinosowski, Boeing

Anuj Kohli, Honeywell

Steve Kornachuk, TELA

Kirby Kruckmeyer, National Semiconductor

Ray Ladbury, NASA GSFC

Jean Marie Lauenstein, NASA GSFC

Jean-Luc Leray, CEA

Tao Li, University of Florida

Justin Likar, Lockheed Martin

Gary Lum, Lockheed Martin

Aurore Luu, UCL

Cheryl Marshall, NASA GSFC

Paul Marshall, Consultant

Joseph Mazur, The Aerospace Corp.

Larry McGee, National Semiconductor

Dale McMorrow, NRL

Marcus Mendenhall, Vanderbilt University

Joe Minow, NASA MSFC

Peter Miraglia, Draper Labs

Ali Mohammadzadeh, ESA/ESTEC

Tim Oldham, NASA GSFC

Alessandro Paccagnella, University of Padova

Philippe Paillet, CEA

Jonny Pellish, NASA GSFC

Lu Peng, LSU

Christian Poivey, ESA/ESTEC

Vincent Pouget, IMS-CMRS

Bruce Pritchard, Northrop Grumman

Heather Quinn, LANL

Barbara Randall, Mayo

William Robinson, Vanderbilt University

Philippe Roche, STMicroelectronics

Anatoly Rosenfeld, University of Wollongong

Leif Scheick, JPL

Ron Schrimpf, Vanderbilt University

Ed Schultz, Raytheon

Jim Schwank, SNL

Marty Shaneyfelt, SNL

Rahul Shringarpure, HRL

Eddy Simoen, IMEC

Mayrant Simons, RTI

Mike Smaylink, TELA

Raphael Some, JPL

Joe Srour, The Aerospace Corp.

Alan Tipton, JHU/APL

Lawrence Townsend, University of Tennessee

Nick van Vonno, Intersil

Raoul Velazco, TIMA

Bert Vermeire, Arizona University

Ari Virtanen, University of Jyväskylä

Jim Warnock, IBM

Kevin Warren, Vanderbilt University

Gilson Wirth, UFRGS

Michael Wirthlin, Brigham Young University

Larry Wissel, IBM

Art Witulski, Vanderbilt University

Frederic Wrobel, University of Montpellier

Michael Xapsos, NASA GSFC

Vivian Zhu, TI

Radiation Effects Steering GroupRadiation Effects Steering Group

64

ChairmanDan Fleetwood Vanderbilt University EECS DepartmentVU Station B #3500922301 Vanderbilt PlaceNashville, TN 37235615-322-2498 fax: 615-343-6702 [email protected](Term expires: 7/12)

Senior Member-at-LargePhilippe PailletCEA/DIF SEIMBruyeres-le-Chatel91297 ArpajonFRANCE33-169-26-5089 fax: [email protected](Term expires: 7/10)

SecretarySteve ClarkNSWC CraneBldg 3334 Code GXM300 Highway 361Crane, IN 47522812-854-1693 fax: [email protected](Term expires: 7/12)

Special Publications AssignmentPaul V. DressendorferSandia National Laboratories (retired)11509 Paseo del Oso, NE, Albuquerque, NM [email protected]

Vice-Chairman, 2012 ConferenceKenneth A. LaBelNASA Goddard, Radiation Effects and Analysis Group Leader, NASA Electronic Parts and Packaging (NEPP) Program Co-ManagerCode 561.4, Bldg 22, Rm 050Grenbelt, MD 20771301-286-9936 fax: 301-286-4699, [email protected]

NPSS AdCom MemberJanet BarthNASA GoddardCode 561, Bldg 23, Room E319 Greenbelt, MD 20771301-286-5966 fax: [email protected](Term expires: 12/11)

Executive Vice-ChairmanMarty ShaneyfeltSandia National LaboratoriesP.O. Box 5800, MS-1083Albuquerque, NM 87185-1083505-844-6137 fax: [email protected](Term expires: 7/12)

Member-at-LargeMike XapsosNASA GoddardGreenbelt Rd, Code 561.4Greenbelt, MD 20771301-286-2263 fax: [email protected](Term expires: 7/11)

Vice-Chairman, PublicationsJim SchwankSandia National LaboratoriesPO Box 5800, MS-1083 Albuquerque, NM 87185 505-844-8376 fax: [email protected](Term expires: 7/12)

Vice-Chairman, 2010 ConferenceJoseph M. Benedetto, Ph.D.Radiation Assured Devices5017 N. 30th StreetColorado Springs, CO 80919719-531-0800 fax: [email protected]

Vice-Chairman, 2013 ConferenceJeffrey BlackVanderbilt University1025 16th Ave SSuite 200Nashville, TN 37212615-322-3758 fax: [email protected]

NPSS AdCom MemberPaul DoddSandia National LabsPO Box 5800MS 1083Albuquerque, NM 87185505-844-1447 fax: [email protected](Term expires: 12/13)

Past ChairmanTimothy R. OldhamDell Perot SystemsCode 561.4Building 22, Room 074Greenbelt, MD 20771301-286-5489 fax: [email protected](Term expires: 7/12)

Junior Member-at-LargePascale GoukerMIT Lincoln Laboratory244 Wood StRoom L-304Lexington, MA 02420781-981-0460 fax: [email protected](Term expires: 7/12)

Vice-Chairman, PublicityTeresa FarrisAeroflex Colorado Springs4350 Centennial Blvd.Colorado Springs, CO 80907-3486719-594-8035 fax: [email protected](Term expires: 7/12)

Vice-Chairman, 2011 ConferenceKay ChesnutThe Boeing CompanyIntegrated Defense SystemsSpace & Intelligence SystemsW/S10/S333 PO Box 92919 Los Angeles, CA 90009 310-416-3705 fax: 310-364-5143 [email protected]

NPSS AdCom MemberJim SchwankSandia National LaboratoriesPO Box 5800, MS-1083 Albuquerque, NM 87185 505-844-8376 fax: [email protected](Term expires: 12/10)

RADECS LiaisonVéronique Ferlet-Cavrois ESA/ESTECKeplerlaan 12200 AG Noordwijk The Netherlands+31 (0) 71 565 6038 fax: +31 (0) 71 565 [email protected](Term expires: 9/12)

ANNOUNCEMENT and FIRST CALL FOR PAPERSANNOUNCEMENT and FIRST CALL FOR PAPERS

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2011 IEEE NUCLEAR AND SPACE RADIATION EFFECTS CONFERENCE

Short Course and Radiation Effects Data Workshop

July 25 - 29, 2011JW Marriott Las Vegas Resort & Spa

Las Vegas, Nevada

www .nsrec .comSponsored By

IEEE/NPSS Radiation Effects Committee

Supported By

Defense Threat Reduction AgencyAir Force Research LaboratorySandia National LaboratoriesJet Propulsion LaboratoryNASA Electronic Parts and Packaging ProgramBAE SystemsHoneywellBoeingNorthrop GrummanAeroflex Colorado SpringsIntersil Corporation

Conference Committee

General ChairmanKay ChesnutThe Boeing [email protected] ProgramRobert ReedVanderbilt [email protected] ArrangementsDale McMorrowNaval Research [email protected] CourseSteve McClureJet Propulsion [email protected] FarrisAeroflex Colorado [email protected] StoneSouthwest Research [email protected] LadburyNASA [email protected] ExhibitsMike FitzpatrickNorthrop [email protected]

The 2011 IEEE Nuclear and Space Radiation Effects Conference will be held July 25 - 29 in JW Marriott Las Vegas Resort & Spa. The conference features a technical program consisting of eight to ten technical sessions of contributed papers describing the latest observations in radiation effects, a Short Course on radiation effects offered on July 25, a Radiation Effects Data Workshop, and an Industrial Exhibit. The technical program includes oral and poster sessions.

Papers on nuclear and space radiation effects on electronic and photonic materials, devices, circuits, sensors, and systems, as well as semiconductor processing technology and design techniques for producing radiation-tolerant (hardened) devices and integrated circuits, will be presented at this meeting of engineers, scientists, and managers. International participation is strongly encouraged.

We are soliciting papers describing significant new findings in the following or related areas:

Basic Mechanisms of Radiation Effects in Electronic Materials and Devices■ Single Event Charge Collection Phenomena and Mechanisms■ Radiation Transport, Energy Deposition and Dosimetry■ Ionizing Radiation Effects■ Materials and Device Effects■ Displacement Damage■ Processing-Induced Radiation Effects

Radiation Effects on Electronic and Photonic Devices and Circuits■ Single Event Effects■ MOS, Bipolar and Advanced Technologies■ Isolation Technologies, such as SOI and SOS■ Optoelectronic and Optical Devices and Systems■ Methods for Hardened Design and Manufacturing■ Modeling of Devices, Circuits and Systems■ Particle Detectors and Associated Electronics for High-Energy Accelerators■ Cryogenic or High Temperature Effects■ Novel Device Structures, such as MEMS and Nanotechnologies

Space, Atmospheric, and Terrestrial Radiation Effects■ Characterization and Modeling of Radiation Environments■ Space Weather Events and Effects■ Spacecraft Charging■ Predicting and Verifying Soft Error Rates (SER)

Hardness Assurance Technology and Testing■ New Testing Techniques, Guidelines and Hardness Assurance Methodology■ Unique Radiation Exposure Facilities or Novel Instrumentation Methods■ Dosimetry

New Developments of Interest to the Radiation Effects Community

PAPER SUMMARY DEADLINE: FEBRUARY 4, 2011

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PROCEDURE FOR SUBMITTING SUMMARIESAuthors must conform to the following requirements:

1. Prepare a single Adobe Acrobat file consisting of a cover page and an informa-tive two to four page summary describing results appropriate for 12-minute oral or a poster presentation. The cover page must provide an abstract no longer than 35 words, the title, name and company affiliation of the authors, and company address (city, state, country). Identify the author present-ing the paper and provide telephone, fax, and email address. The summary must include sufficient detail about the work to permit a meaningful techni-cal review. In the summary, clearly indicate (a) the purpose of your work, (b) significant new results with supporting technical material, and (c) how your work advances the state of the art. Show key references to other related work. The summary must be no less than two and no more than four pages in length, including figures and tables. All figures and tables must be large enough to be clearly read. Note that this is more than an abstract, but do not exceed four pages.

2. Prepare your summary in single-column format, using 11 point or greater font size, formatted for either U.S. Standard (8.5 x 11 inch) or A4 (21 x 29.7 cm) page layout, with 1 inch (2.5 cm) margins on all four sides.

3. Obtain all corporate, sponsor, and government approvals and releases necessary for presenting your paper at an open attendance international meeting.

4. Summary submission is electronic only, through www.nsrec.com. The submission process consists of entering the paper title, author(s) and affiliation(s), and an abstract no longer than 35 words. Authors are prompted to state their preference for presentation (oral, poster, or data workshop poster) and for session. Details of the submission process may be found at www.nsrec.com. The final category of all papers will be determined by the Technical Program Committee, which is responsible for selecting final papers from initial submissions.

Papers accepted for oral or poster presentation at the technical program will be eligible for publication in a special issue of the IEEE Transactions on Nuclear Science (December 2011) based upon papers from the Conference. Selection for this issue will be based on a separate submission of a complete paper. These papers will be subject to the standard full peer review given all papers submitted to the IEEE Transactions on Nuclear Science. Further information will be sent to prospective authors upon acceptance of their NSREC summary. It is not necessary to be an IEEE member to present a paper or attend the NSREC. However, we encourage IEEE and NPSS membership of all NSREC participants.

RADIATION EFFECTS DATA WORKSHOPThe Radiation Effects Data Workshop is a forum for papers on radiation effects data on electronic devices and systems. Workshop papers are intended to provide radiation response data to scientists and engineers who use electronic devices in a radiation environment, and for designers of radiation-hardened systems. Papers describing new simulation or radiation facilities are also welcomed. The procedure for submitting a summary to the Workshop is identical to the procedure for submitting NSREC summaries. Radiation Effects Data Workshop papers will be published in a Workshop Record and are not candidates for publication in the Conference issue of the IEEE Transactions on Nuclear Science.

LAS VEGAS, NEVADAThe JW Marriott Las Vegas Resort & Spa, located less than a half hour from the Las Vegas International Airport, boasts over 50 acres of lushly landscaped grounds, includ-ing a resort pool with waterfalls and whirlpools (www.jwlasvegasresort.com). Indulge in the comfort of the oversized guest rooms, or delight in any of their 11 on-site res-taurants and lounges. This resort is located in the heart of southern Nevada’s most prestigious collection of golf courses, providing a gateway to the outstanding courses in the Vegas area. Nearby Red Rock Canyon (www.redrockcanyonlv.org) provides hik-ing, climbing and biking for those seeking adventure, or try your luck at the Las Vegas resort’s on-site casino. Relax at the 40,000 square foot world-class Aquae Sulis Spa (spa.jwlasvegasresort.com), with 36 treatment rooms, full-service salon and fitness cen-ter, offering a full range of specialty services, including massages, facials, aromatherapy, body wraps and loofah scrubs. And, only 15 minutes away, is the world famous Las Vegas strip, the entertainment capital of the world. Las Vegas offers something for everyone, including an eclectic array of museums and galleries, extensive shopping, fine dining, and gambling and, of course, the world famous Vegas shows.

Summaries must be received by February 4, 2011

Detailed submission and formatting instructions will be available after

January 4, 2011 at www .nsrec .com

Photo: Courtesy of JW Marriott Las Vegas Resort & Spa

From Denver International Airport:

Exit airport on Pena Blvd.

I-70 West

I-25 South

Exit 210A for US-40/US-287/Colfax Ave.

Turn left (east) at W. Colfax Ave.

1.4 mile, turn left onto Court Place

Three blocks, enter the Sheraton Denver Downtown Hotel on the left at 1550 Court Place

A car is not needed during the conference, but parking is available at the hotel. See page 46 for parking rates.

W. Colfax Ave.

Sheraton Denver Downtown Hotel

DenverInternationalAirport

Pena Blvd.

Exit210A

25

70

N

Driving DirectionsDriving Directions

W. Colfax Ave.

W. 14th Ave.

W. 13th Ave.

E. 14th Ave.

E. 13th Ave.

E. Colfax Ave.

N. Broadw

ay

Lincoln St.

UnitedStatesMint

DenverPublicLibrary

DenverArt

Museum

ColoradoState Capitol

Sher

aton

Denve

r

Downt

own

Hotel

Court

Place

15th St.

16th St. Mall

14th St.

Trem

ont P

lace13th St.

Civic CenterPark

w w w. n s re c . c o m

Please see inside back cover for driving directions.

2010 IEEE NUCLEAR & SPACE RADIATION EFFECTS...

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