1

2008/Sep/17

2

射頻積體電路設計

• Text Book:– Behzad Razavi, “RF Microelectronics,” Prentice Hall PTR, 1998

• References:– 教育部顧問室 混合訊號與射頻電路(MSR)聯盟推廣課程教材

– Thomas H. Lee, “The Design of CMOS Radio-Frequency Integrated Circuits,” 2/e, Cambridge University Press, 2004.

• Contents:1. 射頻及無線通訊簡介 6. 振盪器 (Oscillators)2. 射頻設計之基本概念 7. 功率放大器 (PA)3. 射頻IC主被動元件 8. 調變與解調4. 低雜訊放大器 (LNA) 9. 收發機架構5. 混波器 (Mixer)

3

評分標準及參考資訊

• Homework: 10%–一律用A4紙書寫，並裝訂好。遲交的作業：一周內補交成績以

80%採計，隔周起補交打對折。

‧期中考: 35%‧期末考: 35%‧期末報告: 20% • E-mail: ycchiang1970@nchu.edu.tw‧個人網頁: http:/cc.ee.nchu.edu.tw/~ycchiang1970‧實驗室網頁: http://cc.ee.nchu.edu.tw/~rfem‧課程助教: 詹覺安同學 (Lab. 717)

4

Introduction

• What is Radio Frequency?

• Traditional definition:– Frequency range for radio and television transmission (1MHz—1GHz)

5103× 6103× 7103× 8103× 9103× 10103× 11103× 12103× 13103× 14103×

310 210 10 1 110− 210− 310− 410− 510− 610−

Long

wav

era

dio

AM

bro

adca

stra

dio

Shor

twav

era

dio

VH

F TV

FM b

road

cast

radi

oMicrowaves

Far I

nfra

red

Infra

red

Vis

ible

ligh

t

Frequency (Hz)

Wavelength (m)

5

Introduction

Radio astronomy, high-speed microwave radio relay

30–300 GHz10 mm – 1 mm

Extremely High Frequency

microwave devices, mobile phones (W-CDMA), WLAN, most modern Radars

3–30 GHz100 mm – 10 mm

Super High Frequency

television broadcasts, mobile phones, wireless LAN, ground-to-air and air-to-air communications

300–3000 MHz1 m – 100 mm

Ultra High Frequency

FM and television broadcasts30–300 MHz10 m – 1 m

Very High Frequency

Shortwave broadcasts and amateur radio3–30 MHz100 m – 10 m

High Frequency

AM (Medium-wave) broadcasts300–3000 kHz1 km – 100 m

Medium Frequency

Navigation, time signals, AM longwavebroadcasting

30–300 kHz10 km – 1 km

Low Frequency

Submarine communication, avalanche beacons, wireless heart rate monitors

3–30 kHz100 km – 10 km

Very Low Frequency

Example UsesFrequency & λBand Name & Abbr.

6

Introduction

• Standard Prefixes

10dadeka10hhecto10kkilo10Mmega10Ggiga10Ttera

FactoronAbbreviatiPrefix

2

3

6

9

12

18

15

12

9

6

3

2

1-

10aatto10ffemto10ppico10nnano10micro10mmilli10ccenti10ddeci

FactoronAbbreviatiPrefix

−

−

−

−

−

−

−

µ

7

Introduction

• IC — high integration trend:

– E.g.

• One rule for IC design– Use fewest off-chip devices as you can

Cost) (ProcessArea)(Wafer Area)(Circuit Cost Die ×=

π××≈ m 0.1m 1.0arear inch wafe-8m 30m 30area deviceA µµ ×=

50000 NT$cost Process =0.00143 NT$cost Device ≈⇒

devices chip-off ofCost devices chip-on ofCost <<⇒

↓↑⇒ devices chip-off of # and devices chip-on of #

↓⇒ customersofCost

8

Introduction

• IC production schedule– Design phase: 2 months– Layout phase: 0.5~1 month– Process phase: 0.5~2 months– Shipping & package phase: 0.2~0.5 month– Measurement: 1 months– Total duration: 4.2~6.5 months

• Since the IC production cycle time is very long and the time to market is very tight, the design iteration should be minimized.– One iteration for digital ICs, 1~2 iteration for analog/RF ICs.

9

Introduction

• How to minimize design iteration?

• For Foundry– Offer accurate device models– Active devices: corner models, Monte Carlo models– Passive devices: variation ranges

• For Designer– Current-biased scheme for analog/RF ICs– Simulate circuits with most conditions (worst-case simulation)– Add design margin to overcome process variations– Better circuit architectures to overcome process variations

10

Introduction

RF designer• Maxwell’s Equations• AC / Field analysis / time domain• dBm / s-parameters / dBc• Smith Chart• Noise Figure in dB• Thermal / Flicker / Shot Noise • GaAs / BiCMOS / CMOS• 20-transistors ICs (for one block)• Network & Spectrum analyzer• Cadence SpectreRF

Mentor EldoRFAgilent ADS / RFDE

Digital/Analog designer• Ohm’s law• DC / AC• Volts• SPICE• Noise in nV/sqrt(Hz)• Thermal Noise• CMOS• 20-transistor bias circuits• Oscilloscope• eSpice

hSpice

LL

11

Introduction

Figure 1.1 (a) FM transmitter, (b) FM receiver

Figure 1.2 RF section of a cellphone [1]

12

Design Bottleneck

• RF and baseband processing in a transceiver

• Although the baseband section is more complex than RF section in terms of the number of devices, the RF section is still the design bottleneck of the entire system for 3 reasons:1. Multidisciplinary Field2. RF Design Hexagon3. Design Tools

RFSection

BasebandSection

13

Design Bottleneck

• Multidisciplinary Field

RF Design

CommunicationTheory

RandomSignals

TransceiverArchitectures

CADTools

IC Design

WirelessStandards

MultipleAccess

SignalPropagation

MicrowaveTheory

14

Design Bottleneck

• RF Design Hexagon

• Design Tools– Nonlinearity, time variance, and noise in RF circuits make the SPICE-

like tools (linear ac analysis) no longer suitable or efficient.– External components cannot be modeled by typical devices in SPICE.

They can usually be characterized only by S-parameters.

Noise Power

Linearity

SupplyVoltage

Frequency

Gain

15

Applications

16

Applications

17

Applications

18

Applications

19

Analog and Digital Systems

•

Voice Modulator

Carrier

PowerAmplifier

Downconverter Demodulator

Carrier

AudioAmplifier

(a)

(b)Figure 1.6 Block diagram of a generic analog RF system:

(a) transmitter, (b) receiver.

Low-NoiseAmplifier

20

Analog and Digital Systems

•ADC Voice

CompressionCoding

InterleavingPulse

ShapingVoice Modulator

Digital

Carrier

PowerAmplifier

(a)

DownConverter

ADC Demodulator Equalizer

VoiceDecompression

DAC

Carrier Digital

AudioAmplifier (b)

Figure 1.7 Block diagram of a generic digital RF system:(a) transmitter, (b) receiver.

De-interleavingDecoding

21

Analog and Digital Systems

• In the simplest case: the main consideration is the distance– Power delivered and sensitivity of the receiver

• In a realistic environment: interference, multi-path, movement, etc.– Signal processing will achieve a higher performance

• Which parts are “RF electronics”?

2× 2÷

22

Choice of Technology

• GaAs– Higher (breakdown voltage) x (higher cutoff frequency) product, semi-

insulating substrate, and high-quality inductors and capacitor. – Low-yield, low integration, high-cost– PA’s, front-end switches

• BiCMOS / SiGe BiCMOS– Moderate performance and integration, moderate cost

• CMOS– High integration, low-cost– Substrate coupling / loss, modeling, etc

• Silicon BJT• SiGe HBT