1 Silicon Vertex Detector at PHENIX Atsushi Taketani RIKEN / RBRC 1.Physics Goal 2.Detector Concept...
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Transcript of 1 Silicon Vertex Detector at PHENIX Atsushi Taketani RIKEN / RBRC 1.Physics Goal 2.Detector Concept...
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Silicon Vertex Detector at PHENIX
Atsushi TaketaniRIKEN / RBRC
1. Physics Goal
2. Detector Concept
3. Structure
4. Pixel detector
5. Strip detector
6. Summary
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Physics with Silicon Vertex TrackerPhysics with Silicon Vertex Tracker QCD at high temperature• Detail investigation of the hot and dense strongly interacting matter
– Energy loss of heavy quarks in the dense– Elliptic flow of heavy quarks– Open beauty production.– Accurate charm reference for quarkonium.– Determine QQ background of Thermal dilepton continuum – Improve Upsilon e+e- measurement
Spin structure of nucleon• Gluon spin structure of the nucleon
– Gluon polarization G/G with charm, beauty. – x dependence of G /G with -jet correlations.
QCD in cold nuclei• Nuclear structure in nuclei
– Nuclear dependence of PDFs.
– Saturation physics:
– Gluon shadowing over broad x-rangeKey
wor
d = H
eavy
Qua
rk p
rodu
ction
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charm and bottom identification by displaced vertex
Jet identification with larger acceptance
PhysicsPhysics Goals: Gluon polarization Goals: Gluon polarization G(x)G(x)G
luon
Pol
ariz
atio
n
Gluon polarization can be measured by doule-spin asymmetry A_LL of direct photon and heavy quark production in polarized pp collisions
Jet + direct constraint on xg
Polarized p+p collisions
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Expected Performance
Layer radius Sensor Occupancy
Layer 1 2.5 cm Pixel 0.53 %
Layer 2 5.0 cm Pixel 0.16%
Layer 3 10.0 cm Strip 4.5 % (x-strip)
4.7 % (u-strip)
Layer 4 14.0 cm Strip 2.5 % (x-strip)
2.7 % (u-strip)
Expected occupancy at Au-Au 200GeV most central event Distance to the Closest Approach [cm]
D0 decay
Collision Vertex
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Gamma+jets
Q_ – jet_
dpT = 15 ⊕ 5.9pT % ))exp()(exp(
)),exp()(exp(
2
1
jetT
jetT
s
px
s
px
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What is Silicon Detector
electrode
electrode
P type
N type
Diode Sensor
Depletion Layer
Charged particle
+-
+
+
++
--
-
-
electron
ee e e e
h h h h h
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Feature of Silicon Detector
• High dE/dx ( ~ 2MeV /(g/cm^2) )– Solid state detector comparing to gas chambe
r -> thin detector
• Low e-h pair creation energy– 3.6 eV instead of 13.6 eV for gas chamber
• Available Technology by industry– Compact, fine pitch and precise– Huge number of read out channel – Cost performance per readout channel
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Details of sensor
Cross section
•Relatively small readout channel
#ch ~ (Surface area)^1/2
•1+1 dimensional readout
ghost hits on high occupancy
Strip
•Huge readout channel
#ch ~ Surface area•True 2 dimensional read out no ghost at all
Pixel
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Identifying long-lived particle
Polarized ProtonPolarized Proton
Charmed or Bottomed messon
Charmed meson ~ 100m
Bottomed meson ~ 300m
Silicon detector
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Requirements for Vertex Tracker
• High precision tracking for displaced vertex measurement. 40m displaced vertex resolution, c ~ 100m(D), ~400m(B)
• Large coverage tracking capability with momentum resolution (||<1.2 , and full azimuthally with /P ~ 6%P)
• High charged particle density ‘dN/d’ ~ 700 @=0• High Radiation Dose ~3.3E12 Neutron/cm^2@10Years• High Luminosity @PP -> High rate readout• Low Material Budget <- avoid multiple scattering and photon c
onversion for electron measurement by outer detectors.
1232102 scm
Physics side
Environment side
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endcap VTX 1.2 < < 2.7
barrel VTX | < 1.2
NCC 0.9 < < 3.0
Provides displaced vertex & jet measurement over 2
HBD
NCC
VTX
Displaced vertex:VTX: silicon trackerFVTX: forward Si
Jet measurement:NCC: nose cone calorimeter Other detectors:HBD: hadron blind detectorMuon triggerPID in west arm
MuonTrig MuonTrig
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The PHENIX VTX groupThe PHENIX VTX group
• 92 people from 20 institutions as of 2006 May
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Structure Barrel region
• ||<1.2, almost 2 in
• Pixel sensor at inner 2 layers
• Strip sensors at outer 2 layers
Forward region
• 1.2<||<2.7, 2p in
• 4 layers of mini strip
(50 x 2000 to 11000 m)
• Trigger capable
Pixel
Strip
R=2.5 and 5cm
R=10 and 14cm
VTX Layer R1 R2 R3 R4
Geometrical dimensions
R (cm) 2.5 5 10 14
z (cm) 21.8 21.8 31.8 38.2
Area (cm2) 280 560 1960 3400
Channel count Sensor sizeR z (cm2)
1.28 1.36(256 × 32 pixels)
3.43 × 6.36(384 × 2 strips)
Channel size 50 425 m2 80 m 3 cm(effective 80 1000 m2)
Sensors/ladder 4 4 5 6
Ladders 10 20 18 26
Sensors 160 320 90 156
Readout chips 160 320 1080 1872
Readout channels 1,310,720 2,621,440 138,240 239,616
Radiation length(X/X0)
Sensor 0.22% 0.67 %
Readout 0.16% 0.64 %
Bus 0.28%
Ladder & cooling 0.78% 0.78 %
Total 1.44% 2.1 %
Pixel detector Strip detector
VTX parametersVTX parameters
BEAM
Strip
Pixel
Layer radius Detector Occupancy in Central Au+Au collision
1 2.5cm Pixel 0.53 %
2 5.0cm Pixel 0.16%
3 10.0cm Strip 4.5 % (x-strip) 4.7 % (u-strip)
4 14.0 cm Strip 2.5 % (x-strip) 2.7 % (u-strip)
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PIXEL (Sensor and Readout)
Pixel size( x z ) 50 µm x 425 µmSensor Thickness 200umr = 1.28cm, z = 1.36 cm (Active area)256 x 32 = 8192 channel / sensor4 sensor/ chip4 chip / stave
Readout by ALICE_LHCB1 chip
• Amp + Discriminator / channel
•Bump bonded( 2 dim. Soldering) to each pixel
•Running 10MHz clock ( RHIC 106nsec )
•Digital buffer for each channel > 4usec depth
•Trigger capability > FAST OR logic for each crossing
•4 event buffer after L1 trigger
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Pixel detector module• Sensor module consists of 4 ALICE Pixel readout chips
Bump-bonded to silicon sensor
Sensor
• Half stave is mounted on the support structure
Support structure + cooling
• Pixel BUS to bring data out and send control signal into the readout chip is mounted on the half stave
• Each detector module is built of two half staves,read out on the barrel ends
Half stavePixel BUS
Data
• One readout unit, half stave, made from two sensor modules
Full stave
22cm
1.4cm
ALICE LHCB1 chip
SensorSensor Module
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Pixel Readout Overview
Half stave
11cm45cm
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Bus structure
Power 50 m Al
GND 50 m Al
• 5 layers structure• GND, Power and 3 signal lines
Signal 2; (Vertical line)line connected withpixel chip with wire bonding
Signal 3; (Horizontal line) send signal to Pilot Module connected with vertical line with through hole
Signal-3 3 m Cu
Signal-2 3 m Cu
Signal-1 3 m Cu
Signal 1; (for Surface Mount Device)Signal-1, Signal-2, and signal-3 are connected with through hole
Line spacing; 70 m pitchMaterial Budget; Total ~ 0.26 %
< 240 µm
200 µm
(13 µm)
150 µm
Wire bonding
Final configuration sensor
Readout chip
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Pixel Ladder SPIROFEM
Readout pictures
Extender
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2. Set-up of the telescope• Three half staves
• Three SPIROs
• One FEM
• Two trigger scintillator
• Analysis software– DAQ– Data converter– Tracking code– Event display
Set-up of three layers
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Layer 1
Layer 2
Layer 3
chip 1 chip 2 chip 3 chip 4
chip 5 chip 6 chip 7 chip 8
chip 9 chip 10 chip 11 chip 12
Event# 200
columnrow
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Silicon Sensor Stripixel Concept • a-pixels are connected to form X-strips, and b-
pixels are connected to form stereo-angled (4.6o) U-strips
X strips (connect a-pixels)
a-pixels interconnect u strips (connect b-pixels)
b-pixels interconnect
Readout pulse height by ADC
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Sensor elements:
Pixels: 80 µm 1 mm, projective readout via
double metal XU/V “strips” of ~3 cm length.
Developed at BNL Instrumentation Gr.
Two strip-pixel arrays on a single-sided wafer of 500 µm thickness, with 384 + 384 channels on 3 x 3 cm2 area.
new design:
“lateral” SVX4 readout.
Made by Hamamatsu
Initial design:
“longitudinal” readout.
Made by SINTEF
Single sided
1+1 dimensional readout
( X and U direction)
3cm3cm sensor 2 / chip
768 X strip and 768 U strips/chip
Position resolution is 25m by test beam
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Prototype Detector Using HPK Sensor
•The 1st prototype detector– 625 μm thickness– Tested at BNL – ROC+RCM+FEM
prototype w/ SVX4 chips developed by ORNL
– Gluing/wire-bonding at RIKEN
Optical fiber + focuser
XYZ micro-stage
Bias line
Data + Control cables
Power cables
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• S/N ~ 20:1 for 625 μm thickness• Charge-sharing test w/ IR laser pulse injection
– Large spot size in the present setup– Focusing length (8 mm) was too
short to shine only one pixel in 625 μm thick sensor.
– The maximum focusing length available in the same company is 70 mm. Not enough.
• Planned: possible solution is to use a radioactive source, cosmic rays and beam.
IR Laser Tests Results
X-Strip U-Strip
Laser spot
U-Strip
X3R U3R
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R&D : Prototypes Sensors• 1st prototype sensor
– Spiral p+ electrode : 8 μm line, 5 μm gap, 3 turns
– Thickness : 400/250 μm– R/O chip: VA2 (analog multiplexer)– Tests w/ source & beam
•S/N: 17:1 for 400 μm thickness•2-D sensitivity need improvements.
• 2nd prototype sensor – Spiral p+ electrode : 5 μm line,
3 μm gap, 5 turns– Thickness : 400/500 μm– R/O chip: SVX4(CDF SVX4 hybrid)– Tests w/ nano-sec pulsed laser
•S/N: 14:1 for 500 μm thickness•Laser signals were seen
2nd prototype sensor
1st prototype sensor
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Radiation damage of stripixel sensor
eqV
I
PHENIX in RHIC2 for 10 years
Saturation of
circuit
15nA/strip
20 ℃
10 ℃
0 ℃
-10 ℃
Rikkyo
PHENIX IR
3.3E+12 [Neq/cm2]
for 1 year from 2009 ~3E+11 [Neq/cm2]
Operation temperature will be 0 deg C
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Summary
• PHENIX VTX will investigate many physics on both spin and heavy ion program of RHIC.
• Detector R&D and production is on going.
• VTX will be installed in 2009.
• You are welcome to visit our Lab@RIKEN.
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endcap VTX 1.2 < < 2.7
barrel VTX | < 1.2
NCC 0.9 < < 3.0
Provides displaced vertex & jet measurement over 2
HBD
NCC
VTX
Displaced vertex:VTX: silicon trackerFVTX: forward Si
Jet measurement:NCC: nose cone calorimeter Other detectors:HBD: hadron blind detectorMuon triggerPID in west arm
MuonTrig MuonTrig