1 ERT CNFRS/URSI Journées Scientifiques 2007 Transistors organiques ambipolaires J.-M. Nunzi, A....

1ERTERT CNFRS/URSI Journées Scientifiques 2007

Transistors organiques ambipolaires

J.-M. Nunzi, A. Pandey, N. Unni

Cellules Solaires Photovoltaïques Plastiques,POMA – CNRS, Université d’Angers

Transistors organiques ambipolaires

J.-M. Nunzi, A. Pandey, N. Unni

Cellules Solaires Photovoltaïques Plastiques,POMA – CNRS, Université d’Angers

50’

• Transistors Mémoires

• Transistors ambipolaires


Organic Field Effect Transistors

• Low temperature processing• Compatibility with plastic substrates

Applications : Active matrix displays Low cost logic circuits Smart cards

FET Type FeRAM

• Nonvolatile Data Storage

• Nondestructive data readout

• Single Transistor type memory cell

Unni et al., Appl Phys Lett 2004


P(VDF-TrFE) Pentacene

Pentacene / active material

Polyvinylidene fluoride-Trifluoroethylene / gate insulator

Gold & ITO / contacts

Structure


Experimental Details

• ITO coated glass slides as substrates

• P(VDF-TrFE) spin coated

• Pentacene evaporated

• Gold source & drain electrodes

• Channel length 120µm

• Channel width 0.5mm


How does a MISFET works ?

Dielectric-Gate Voltage CB

VB

EF

Semiconductor

Energy

D S

Vds

Vgs

G


0 -10 -20 -30 -40 -50

0.0

-0.1

-0.2

-0.3

-0.4

-0.5

Vg

(V)

-50

-40

-30-20-100

I d (

)

Vd(V)

Transistor characteristics of a pentacene FET with P(VDF-TrFE) as gate insulator


0 10 20 30 40 50

0.0001

0.0002

0.0003

0.0004

0.0005

0.0006

0.0007

|I d,sa

t|0.5 (

A0.

5 )

-Vg (V)

|Id,sat|0.5 vs.Vg

µFET = 2.6 x 10-3 cm2s-1V-1

Threshold voltage = -17.4 V

2, )(

2 tgFEisatd VVCL

WI


How does a MFS-FET works ?

FerroelectricVg = 0 CB

VB

EF

Semiconductor

Energy

D S

Vds

Vgs=0

G+ + + +


0 -2 -4 -6 -8 -10 -12 -140.05

0.00

-0.05

-0.10

-0.15

-0.20

-0.25

-0.30

I d (A

)

Vd (V)

Before writing After writing

Comparison of drain currents at Vg = 0, before and after writing with –50 V

ON

OFF


FET ambipolaire


0.0

-0.5

-1.0

-1.5

-2.0 (a)

VG (

V)

-12-9

-6

-3

0

I D (A

)

0 -5 -10 -15 -20 -25 -30

0

-2

-4

-6

-8

-10

-12

-14

(b)

VG (

V)

-12-15-18-21

-24

-27

-30

I D (A

)

VD (V)

Fct. Canal P

0

2

4

6

8 (a)

VG (

V)

15129

6

3

0

I D (

A)

0 5 10 15 20 25 30

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4(b)

VG (

V)

1518

21

24

27

I D (A

)V

D (V)

Fct. Canal N


-30 -20 -10 0 10 20 300.0000

0.0005

0.0010

0.0015

0.0020

0.0025

0.0030

0.0035

0.0040

n- channelp- channel

|I D, s

at|0.

5 (A

)0.5

VG (V)

µe= 10-2 cm2V-1s-1

(1,2.10-2 / pure)

µh= 9.10-2 cm2V-1s-1

Chem Phys Lett 2006

Caractéristiques ON/OFF


Composants plastiques souples, stables et reproductibles Composants plastiques souples, stables et reproductibles

Cellules PV souples 2-3% (APL 2006)


TITK, Rudostadt


Fraunhofer, IZM, Munich

1 ERT CNFRS/URSI Journées Scientifiques 2007 Transistors organiques ambipolaires J.-M. Nunzi, A....

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