001-92370 Owner: MRAN Rev *D Tech lead: EWOO 4Mb Serial F-RAM New Product Introduction Cypress...

001-92370 Owner: MRAN Rev *D Tech lead: EWOO

4Mb Serial F-RAM New Product Introduction

Cypress Introduces the Industry’s First 4Mb Serial F-RAM

New Product Introduction:

4Mb Serial F-RAM™

001-92370 Owner: MRANRev *D Tech lead: EWOO

The Global TAM2 forecast for NVRAMs is $590M in 2014 with a 10% CAGR through 20183

Cypress’s 4Mb F-RAM serves many high-growth NVRAM markets, including:Multifunction printersIndustrial controls and automationMedical wearablesTest and measurement equipmentSmart meters

The mission-critical systems used in these high-growth markets must reliably capture and store large amounts of data on power loss

These systems require high-density, high-reliability, high-endurance and energy-efficient NVRAMs Alternative nonvolatile memories, such as EEPROM and MRAM, cannot match F-RAM performance

Mission-critical systems require high-density NVRAMs with superior reliability, endurance and energy efficiency

NVRAM1: Rapid Growth, Broad Markets

3a4Mb Serial F-RAM New Product Introduction

Serial F-RAM

1 A nonvolatile memory (NVM) that allows direct access to stored data in any random order2 Total available market 3 Source: Web-Feet Research


Cypress Is the NVRAM Market Leader

3b

Cypress offers the largest portfolio of serial and parallel NVRAM productsF-RAM™, the industry’s most energy-efficient serial and parallel NVRAMs

nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers the largest portfolio of the industry’s most energy-efficient and reliable F-RAM productsF-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the Write Endurance 1

F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V

SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages

F-RAM products offer optional real-time clocks and event counters Cypress offers the largest portfolio of the industry’s fastest parallel nvSRAM products25 ns access times are available with unlimited Write Endurance

Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltage

Asynchronous x8, x16, x32 SRAM parallel interfaces come in FBGA, SOIC, SSOP, and TSOP packages

Integrated real-time clocks are also available on nvSRAM products

Cypress:Was the first to produce F-RAM and nvSRAM products

Has shipped more than 1 billion NVRAM units

Provides products that meet the most rigorous automotive and military standards

Assures long-term supply of F-RAM and nvSRAM products

Cypress offers the industry’s fastest, most energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data


1 The number of times an NVM cell can be rewritten before it wears out


Serial Nonvolatile Memory TermsNonvolatile Memory (NVM)Memory that retains its information on power loss

Nonvolatile Random Access Memory (NVRAM)NVM that allows direct access to stored data in any random order

Electrically Erasable Programmable Read-Only Memory (EEPROM)A common NVM that uses floating-gate technology to store data

Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy NVM that uses ferroelectric technology to store data

Nonvolatile Static Random-Access Memory (nvSRAM)Fast SRAM memory with a SONOS NVM cell embedded in each SRAM cell to retain data on power loss

Magnetoresistive Random Access Memory (MRAM)An NVRAM that uses the magnetism of electron spin to store data

Page WriteA write to a fixed-length contiguous block of memory

Soak TimeThe approximate 10 ms required for a 2Mb EEPROM to complete a Page Write after the data is presented at the input buffers

Write EnduranceThe number of times an NVM cell can be rewritten before it wears out

Wear LevelingA method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software algorithm

to move storage to unused memory addresses before the Write Endurance limit on an active address is reached


NVM Hierarchy

NVM

NVRAM

nvSRAMF-RAM

EEPROM

MRAM


Serial NVM Design Problems1. Many electronic devices must reliably capture and store large amounts of data in NVM on power lossEEPROMs are only available up to 2Mb in density

2Mb EEPROMs require a 10-ms continuation of active power per Page Write for Soak Time

Soak Time requires additional capacitors or batteries for a Page Write on power loss, increasing cost and reducing reliability

Mission-critical data can be lost when memory is corrupted by exposure to radiation or magnetic fields

2. Many data-logging applications exceed EEPROM’s 1-million write-cycle limitationWear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan

Wear Leveling requires up to 8x the memory capacity and additional software, increasing engineering effort and cost

3. Systems using EEPROM and MRAM consume excess active powerFor the 10 ms required for 2Mb EEPROM Soak Time per Page Write

For the processing required to do EEPROM Wear Leveling

For the very high active and sleep currents consumed by MRAM

Cypress’s serial F-RAM solves these problems Offers densities up to 4Mb

Eliminates Soak Time and the need for additional capacitors or batteries to complete a Page Write on power loss

Protects data with radiation- and magnetic field-tolerant F-RAM memory cells

Provides 100 trillion write cycles (31,710 years at 10-ms write frequency), eliminating the need for Wear Leveling

Consumes 2x to 5x less active power than EEPROM and 45x less active power than MRAM

Cypress’s high-reliability 4Mb F-RAM offers 100 million times the endurance of EEPROM and consumes less active power than EEPROM and MRAM



Serial F-RAM Is a Better Solution

Additional capacitor to maintain powerfor 10 ms per Page Write for Soak Time

Simplify a conventional, complex,

EEPROM-based design…

F-RAM pin-for-pin replacement for EEPROM SOIC8

By choosing F-RAM asyour serial NVM solution…

To produce better solutions formultiple applications at a lower cost, especially for mission-critical applications.

6

Multifunction Printers

Industrial Controls and Automation

Medical Wearables

Test and Measurement Equipment

Smart Meters

File System

Memory

Controller

Worn Cell

4x EEPROM capacity for Wear Leveling

Wear Leveling software algorithm to increase EEPROM Write Endurance


8 x 2Mb for a 4Mb System


Feature

F-RAMCY15B104Q

F-RAMMB85RS2MT1

MRAMMR20H40

EEPROMM95M022

Density 4Mb 2Mb 4Mb 2Mb

SPI Speed 40 MHz 25 MHz 50 MHz 5 MHz

Sleep Mode Current 8 µA 10 µA 40 µA N/A

Soak Time 0 ms 0 ms 0 ms 10 ms

Endurance (Cycles) 1014 1013 Unlimited 1.2 x 106

Lifetime @ 10-ms Write Frequency3 31,710 years 3,171 years Unlimited 208 minutes

Active Write Current4 0.6 mA 2.2 mA 27.1 mA 3 mA

Nonvolatile Retention 100 years 10 years 20 years 200 years

Magnetic Damage Risk No No Yes5 No

1 2Mb Fujitsu serial F-RAM; Fujitsu does not offer 4Mb serial F-RAM2 2Mb ST serial EEPROM; ST does not offer 4Mb serial EEPROM3 Comparable write frequency limited by EEPROM’s Soak Time4 Conditions: Max current, SPI, 5 MHz, 2.7 to 3.6 V, -40°C to +85°C5 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids

Cypress 4Mb Serial NVRAM vs. Competition’s



SPI F-RAM I2C F-RAMProcessor

CompanionWireless Memory

Parallel F-RAM

F-RAM PortfolioLow Power | High Endurance

FM28V020256Kb; 2.0-3.6 V

70 ns; x8; Ind1

FM1808B256Kb; 5.0 V70 ns; x8; Ind1

Wireless MemoryNDA RequiredContact Sales

FM25040/L044Kb; 3.3, 5.0 V

20 MHz SPI; Ind1, Auto E3

FM25C160/L1616Kb; 3.3, 5.0 V


FM25640/CL6464Kb; 3.3, 5.0 V


FM25V02/W256256Kb; V02: 2.0-3.6 V

W256: 2.7-5.5 V40 MHz SPI; Ind1, Auto A2

FM25V05512Kb; 2.0-3.6 V

40 MHz SPI; Ind1, Auto A2

FM25V10/VN101Mb; 2.0-3.6 V


FM25H20/V202Mb; H20: 2.7-3.6 V

V20: 2.0-3.6 V40 MHz SPI; Ind1

FM25V01128Kb; 2.0-3.6 V


FM24C04/CL044Kb; 3.3, 5.0 V1 MHz I2C; Ind1

FM24C16/CL1616Kb; 3.3, 5.0 V1 MHz I2C; Ind1

FM24C64/CL6464Kb; 3.3, 5.0 V

1 MHz I2C; Ind1, Auto E3

FM24V02/W256256Kb; V02: 2.0-3.6 V

W256: 2.7-5.5 V3.4 MHz I2C; Ind1, Auto A2

FM24V05512Kb; 2.0-3.6 V3.4 MHz I2C; Ind1

FM24V10/VN101Mb; 2.0-3.6 V

3.4 MHz I2C; Ind1

FM24V01128Kb; 2.0-3.6 V

3.4 MHz I2C; Ind1, Auto A2

FM3164/31(L)27664Kb; 3.3, 5.0 V; 1 MHzI2C; Ind1; RTC4; Power

Fail; Watchdog; Counter

FM31256/31(L)278256Kb; 3.3, 5.0V; 1 MHzI2C; Ind1; RTC4; Power

Fail; Watchdog; Counter

FM33256256Kb; 3.3V; 16 MHz SPI

Ind1; RTC4; Power FailWatchdog; Counter

4K

b -

25

6K

b5

12

Kb

- 8

Mb

1 Industrial grade −40ºC to +85ºC2 AEC-Q100 −40ºC to +85ºC3 AEC-Q100 −40ºC to +125ºC

FM28V202A2Mb; 2.0-3.6 V60 ns; x16; Ind1

FM28V102A1Mb; 2.0-3.6 V60 ns; x16; Ind1

CY15B104Q 4Mb; 2.0-3.6 V

40 MHz SPI; Ind1

FM16W0864Kb; 2.7-5.5 V70 ns; x8; Ind1

FM18W08256Kb; 2.7-5.5 V

70 ns; x8; Ind1

FM22L16/LD164Mb; 2.7-3.6 V55 ns; x8; Ind1

4 Real-time clock Production Development

QQYYQQYYAvailability

Sampling ConceptStatus

CY15B102N2Mb; 2.0-3.6 V

60 ns; x16; Auto A2

CY15B101N1Mb; 2.0-3.6 V

60 ns; x16; Auto A2

CY15B102Q2Mb; 2.0-3.6 V

25 MHz SPI; Auto E3

NEW NEW

NEW

NEW

10a


nvSRAM PortfolioHigh Density | High Speed

64

Kb

- 2

56

Kb

51

2K

b -

16

Mb

1 Industrial grade −40ºC to +85ºC2 Real-time clock3 Open NAND flash interface

Parallel nvSRAM SPI nvSRAM I2C nvSRAMParallel nvSRAM SPI nvSRAM I2C nvSRAM

CY14B116K/L 16Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14B116R/S 16Mb; 3.0 V

25, 45 ns; x32; Ind1

RTC2

CY14V116F/G 16Mb; 3.0, 1.8 V I/O

30 ns; ONFI3 1.0x8, x16; Ind1

CY14B116M/N 16Mb; 3.0 V

25, 45 ns; x16; Ind1

RTC2

CY14B108K/L8Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14B104K/LA4Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14B101KA/LA1Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14V101LA1Mb; 3.0, 1.8 V I/O25, 45 ns; x8; Ind1

CY14B256KA/LA256Kb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14V/U256LA256Kb; 3.0, 1.8V I/O

35 ns; x8; Ind1

CY14B108M/N8Mb; 3.0 V

25, 45 ns; x16; Ind1

RTC2

CY14B104M/NA4Mb; 3.0 V

25, 45 ns; x16; Ind1 RTC2

CY14E256LA256Kb; 5.0 V

25, 45 ns; x8; Ind1

CY14V104LA4Mb; 3.0, 1.8 V I/O25, 45 ns; x8; Ind1

CY14B101MA/NA1Mb; 3.0 V

25, 45 ns; x16; Ind1 RTC2

CY14V101NA1Mb; 3.0, 1.8 V I/O25, 45 ns; x16; Ind1

CY14V104NA4Mb; 3.0, 1.8 V I/O25, 45 ns; x16; Ind1

CY14B064P64Kb; 3.0 V

40 MHz SPI; Ind1 RTC2

CY14B256P256Kb; 3.0 V

40 MHz SPI; Ind1

RTC2

CY14B512P512Kb; 3.0 V


CY14B101P1Mb; 3.0 V


CY14B064I64Kb; 3.0 V

3.4 MHz I2C; Ind1 RTC2

CY14B256I256Kb; 3.0 V


CY14B512I512Kb; 3.0 V


CY14B101I1Mb; 3.0 V


STK11C68-564Kb; 5.0 V

35, 55 ns; x8; Mil4

STK12C68-564Kb; 5.0 V

35, 55 ns; x8; Mil4

STK14C88-5256Kb; 5.0 V

35, 45 ns; x8; Mil4

4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface6 Double Data Rate

CY14V101QS1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1

Ext. Ind7

CY14V101PS1Mb; 3.0, 1.8 V I/O

108 MHz QSPI5; Ind1 Ext. Ind7; RTC2

Higher DensitiesQSPI5 nvSRAM NDA RequiredContact Sales

Higher DensitiesDDRx6 nvSRAM NDA RequiredContact Sales

Production Development

QQYYQQYYAvailability

Sampling ConceptStatus

NEW NEW

7 Extended Industrial grade −40ºC to +105ºC

10b


4Mb SPI Serial F-RAM

Multifunction printersIndustrial controls and automationMedical wearablesTest and measurement equipmentSmart meters

Applications

Features

Preliminary Datasheet: Contact Sales

Collateral

Block Diagram

Sampling: Q2 2015Production: Q4 2015

Availability

F-RAM Array

Data I/O Register

Status Register

Address Register

Instruction Register

Control Logic

Serial Input

40-MHz SPI interface100-trillion read/write cycle endurance Operating voltage range: 2.0-3.6 VLow (8-µA) sleep current100-year data retentionIndustrial temperature operationPackages: 8-pin TDFN, 8-pin SOIC

4Mb SPI Serial F-RAM

Control

Serial Output

4



Here’s How to Get Started

1. Download the SPI Guide for F-RAM

2. Register to access online technical support: www.cypress.com

3. Request a preliminary datasheet: Contact Sales

12

Smart E-Meter by Landis + Gyr

Motor Control by SEW

Multifunction Printer by Ricoh



APPENDIX



4Mb F-RAMPart Number Density Interface Frequency

Min. Supply Voltage

Max. Supply Voltage Temp Package

CY15B104Q-SXI 4Mb SPI 40 MHz 2.0 V 3.6 V -40 to 85°C 8-SOIC

CY15B104Q-LHXI 4Mb SPI 40 MHz 2.0 V 3.6 V -40 to 85°C 8-DFN

4Mb F-RAMProduct Selector Guide

16

CY 15 B 104 Q – XX X I

Serial F-RAM Part Numbering Decoder

Temperature Range: I = Industrial

Package: S = 8-SOIC, LH = 8-DFN

Interface: Q = SPI

Density: 104 = 4Mb

Marketing Code: 15 = F-RAM

Company ID: CY = Cypress

Voltage: B = 2.0 to 3.6 V

Pb Content: X = Pb-free



References and LinksCypress Nonvolatile Products website: www.cypress.com/nonvolatileThe source for all of our publicly available nonvolatile product documentation and collateral

Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap

Datasheets and NDA roadmap requests: Cypress Sales Representative or email [email protected]

Application Notes: Nonvolatile Products Application Notes

Knowledge Base Articles: Nonvolatile Products Knowledge Base Articles



Competitor

Price: $0.391

Additional Value

Wear Leveling firmware development: New firmware development, testing and certification; 25 man-weeks @ $2,000/man-week amortized over 100,000 unitsValue Added: $0.50

EEPROM: (8x) ST M95M02 2MbPrice: (8 x $2.16): $17.281

BOM Integration

10-ms Soak Time Page Writes: Nichicon URU1A222MHD1TO 2.2-mF capacitor

$17.28

$0.39

$0.39

$0.50

$0.50

$18.17

Competitor

Capacitor for 10-ms Soak Time Page Writes

BOM Integration Value

Wear Leveling Firmware Development

Total Additional Value

Total Value Delivered

Target Cypress Solution: Total Cost:

32% Total Savings:

CY15B104Q-SXI$12.322

$5.85

1 Digikey website 1ku pricing on 02/24/2015

2 Future 1ku Cypress website pricing on 02/24/2015 19

4Mb Serial F-RAM Solution Value


001-92370 Owner: MRAN Rev *D Tech lead: EWOO 4Mb Serial F-RAM New Product Introduction Cypress...

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