001-91017 Owner: TUP Rev *D Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution...

001-91017 Owner: TUPRev *D

Cypress Introduces the Industry’s Fastest High-DensityNVRAM Solution

16Mb nvSRAMNew Product Introduction

16Mb nvSRAM New Product Introduction (Engineering)


The Global TAM1 for Nonvolatile RAM (NVRAM) is forecast to be $590M in 20142 with a 10% CAGR through 2018

Cypress’s 16Mb NVRAM applications:Industrial Automation

Computing and Networking

Avionics and Defense

Electronic Gaming

Customers in these markets make high-performance systems that require instant and reliable data capture on power loss

Customers prefer battery-free and energy-efficient systems

Some customers require ONFI3-compatible NVRAM interfaces

The current solution, Battery-Backed SRAM, cannot meet any of these requirements

Take advantage of the upcoming sea change from Battery-Backed SRAM to NVRAM

1 Total Available Market

2 Web-Feet Research3 Open NAND Flash Interface Standard

Demand for Better Performance Is Driving Nonvolatile RAM Growth

3a16Mb nvSRAM New Product Introduction (Engineering)


Cypress Is the NVRAM Market Leader

3b

Cypress offers the largest portfolio of serial and parallel Nonvolatile Random-Access Memory productsF-RAM™, the industry’s most energy-efficient serial NVRAMs

nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM productsF-RAM consumes 30% of the power of the most advanced EEPROM and offers 100 million times the endurance

F-RAM densities range from 4Kb to 4Mb, with supply voltages from 2.0 V to 5.5 V

SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages

Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM productsAccess times range from 20 ns to 45 ns with unlimited read/write cycle endurance

Densities range from 64Kb to 16Mb with 3.0-V and 5.0-V supply voltages and 1.8-V I/O voltages

Asynchronous x8, x16 and x32 SRAMs come in a wide variety of packages

Integrated real-time clocks are also available on nvSRAM products

Cypress:Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience

Continues to invest heavily in new products

Is committed to providing products that meet the most rigorous automotive and military standards

Assures long-term supply of F-RAM and nvSRAM products

Has shipped more than 1 billion NVRAM units

Cypress offers the industry’s fastest, most energy-efficient, highest-reliability NVRAM solutions to capture and protect the world’s most critical data



Parallel Nonvolatile Memory TermsNonvolatile Memory (NVM)Memory that retains data on power loss

Nonvolatile Random-Access Memory (NVRAM)A Nonvolatile Memory that allows direct access to stored data in any random order

Write EnduranceThe number of times a Nonvolatile Memory cell can be rewritten before it wears out

Silicon Oxide Nitride Oxide Silicon (SONOS) A transistor with a polysilicon gate (S), an Oxide Nitride Oxide (ONO) gate dielectric and a Silicon substrate (S) used to create

a Nonvolatile Memory storage cell

Nonvolatile Static Random-Access Memory (nvSRAM)Fast SRAM memory with a SONOS Nonvolatile Memory cell embedded in each SRAM cell to retain data on power loss

Open NAND Flash Interface (ONFI) StandardAn open interface standard that assures the compatibility and interoperability of NAND devices from different vendors

Battery-Backed SRAM (BBSRAM)SRAM memory connected to a battery to retain data on power loss

Restriction of Hazardous Substances (RoHS)A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components

Redundant Array of Independent Disks (RAID)A storage technology that uses two or more disk drives for redundancy



Parallel NVM Design Problems1. Many systems require fast Nonvolatile Memories with high Write EnduranceTraditional EEPROM and flash Nonvolatile Memories have slow write times (>1 ms) and limited Write Endurance

Low-power asynchronous SRAMs have fast, ~45-ns access times but require battery backup to store data on power loss

Most NVRAMs do not offer an ONFI Standard, making them incompatible with many controllers

2. Conventional BBSRAM solutions force undesirable trade-offsBatteries require power-management circuits and firmware, which add system cost and increase complexity

Coin cell batteries reduce reliability and have a limited lifetime, which mandates system maintenance and downtime

Data is lost if the battery charge is drained before system power is restored, which mandates fast time-to-repair

Batteries contain heavy metals that violate RoHS regulations

3. Many systems require accurate time-stamping and instant capture of large amounts of dataThe accurate external real-time clock chips used to time-stamp data add cost and complexity

Conventional NVRAMs with more than 8Mb capacity are limited to 35-ns to 100-ns access times

Cypress’s 16Mb nvSRAM solves all these problemsProvides 25-ns read/write access time with unlimited Write Endurance

Offers both high-speed asynchronous parallel and ONFI Standard 1.0-compatible interfaces

Requires no batteries to retain data on power loss for unlimited periods, thus meeting RoHS regulations

Stores data reliably on power loss without the need for external power-management circuits and firmware

Offers an integrated, high-accuracy real-time clock

5

The Cypress 16Mb nvSRAM is the industry’s fastest high-density NVRAM. It reduces system cost and complexity by eliminating batteries and clock chips.



Parallel nvSRAM Is a Better Solution

Battery-free parallel nvSRAM solution

By choosing nvSRAM as your parallel

Nonvolatile Memory solution…

To produce more reliable solutions

for mission-critical applications at

a lower cost.

Battery required to retain data on power loss

6

Extra board area for battery

Standard SRAM memory

Simplify a complex BBSRAM-based design…

Industrial Automation

Computing and Networking

Avionics and Defense

Electronic Gaming



1 Low-power 16Mb asynchronous SRAM2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 45 ns (MRAM), 2.7 to 3.6 V, −40°C to +85°C3 Based on the typical life span of a backup battery 4 An MRAM can be corrupted by the magnetic fields encountered near motors and solenoids

FeaturenvSRAMCY14B116

AsynchronousSRAM1 + BatteryR1LV1616HBG

MRAMMR4A16B

Access Time 25 ns 45 ns 35 ns

Battery Requirement No Yes No

Active Write Current2 75 mA 50 mA 150 mA

RoHS Compliant Yes No Yes

Nonvolatile Retention 20 years 5 years3 20 years

Magnetic Field Immunity Yes Yes No4

Real-Time Clock Yes No No

ONFI Standard 1.0 Interface Yes No No

Cypress 16Mb NVRAM Solution vs.Competition’s



nvSRAM PortfolioHigh Density | High Speed

64

Kb

- 2

56

Kb

51

2K

b -

16

Mb

1 Industrial grade −40ºC to +85ºC2 Real-time clock3 Open NAND flash interface

Parallel nvSRAM SPI nvSRAM I2C nvSRAMParallel nvSRAM SPI nvSRAM I2C nvSRAM

CY14B116K/L 16Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14B116R/S 16Mb; 3.0 V

25, 45 ns; x32; Ind1

RTC2

CY14V116F/G 16Mb; 3.0, 1.8 V I/O

30 ns; ONFI3 1.0x8, x16; Ind1

CY14B116M/N 16Mb; 3.0 V

25, 45 ns; x16; Ind1

RTC2

CY14B108K/L8Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14B104K/LA4Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14B101KA/LA1Mb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14V101LA1Mb; 3.0, 1.8 V I/O25, 45 ns; x8; Ind1

CY14B256KA/LA256Kb; 3.0 V

25, 45 ns; x8; Ind1

RTC2

CY14V/U256LA256Kb; 3.0, 1.8V I/O

35 ns; x8; Ind1

CY14B108M/N8Mb; 3.0 V

25, 45 ns; x16; Ind1

RTC2

CY14B104M/NA4Mb; 3.0 V

25, 45 ns; x16; Ind1 RTC2

CY14E256LA256Kb; 5.0 V

25, 45 ns; x8; Ind1

CY14V104LA4Mb; 3.0, 1.8 V I/O25, 45 ns; x8; Ind1

CY14B101MA/NA1Mb; 3.0 V

25, 45 ns; x16; Ind1 RTC2

CY14V101NA1Mb; 3.0, 1.8 V I/O25, 45 ns; x16; Ind1

CY14V104NA4Mb; 3.0, 1.8 V I/O25, 45 ns; x16; Ind1

CY14B064P64Kb; 3.0 V

40 MHz SPI; Ind1 RTC2

CY14B256P256Kb; 3.0 V

40 MHz SPI; Ind1

RTC2

CY14B512P512Kb; 3.0 V


CY14B101P1Mb; 3.0 V


CY14B064I64Kb; 3.0 V

3.4 MHz I2C; Ind1 RTC2

CY14B256I256Kb; 3.0 V


CY14B512I512Kb; 3.0 V


CY14B101I1Mb; 3.0 V


STK11C68-564Kb; 5.0 V

35, 55 ns; x8; Mil4

STK12C68-564Kb; 5.0 V

35, 55 ns; x8; Mil4

STK14C88-5256Kb; 5.0 V

35, 45 ns; x8; Mil4

4 Military grade −55ºC to +125ºC 5 Quad serial peripheral interface6 Double Data Rate

CY14V101QS1Mb; 3.0, 1.8 V I/O 108 MHz QSPI5; Ind1

Ext. Ind7

CY14V101PS1Mb; 3.0, 1.8 V I/O

108 MHz QSPI5; Ind1 Ext. Ind7; RTC2

Higher DensitiesQSPI5 nvSRAM NDA RequiredContact Sales

Higher DensitiesDDRx6 nvSRAM NDA RequiredContact Sales

Production Development

QQYYQQYYAvailability

Sampling ConceptStatus

NEW NEW

7 Extended Industrial grade −40ºC to +105ºC



16Mb Parallel nvSRAM

Industrial automationComputing and networkingAvionics and defenseElectronic gaming

Applications

Async parallel interface: 25-ns access time, x8, x16, x32 buses ONFI Standard 1.0: 30-ns access time, x8 and x16 bus widthsUnlimited read/write enduranceOne million store cycles on power failData retention of 20 years at 85ºC and 150 years at 65ºCOperating voltages: 3.0 V, 5.0 V; 1.8 V I/OLow standby (750 µA) and sleep (10 µA) currentsIntegrated, high-accuracy real-time clock (RTC)Industrial grade temperaturePackages: 44-TSOP II, 48-TSOP I, 54-TSOP II, 165-FBGA

Features

Final Datasheet: 16Mb nvSRAM

Collateral

Block Diagram

Sampling: NowProduction: Now

Availability

SONOS Array

SRAM Array

Address Decoder

Data

Address

Power Control

VCAP4

Store/Recall Control HSB5

Recall

Store

x32

x21

Control Logic

I/O Control

Software Command

DetectRTC

XIN1

XOUT2

INT3

3Control

16 Mb Parallel nvSRAM

1 Crystal connection input2 Crystal connection output3 Interrupt output/calibration/square wave

4 External capacitor connection5 Hardware Store busy



Here’s How to Get Started

1. Download the App Note: A Comparison Between nvSRAMs and BBSRAMs

2. Register to access online technical support: http://secure.cypress.com/myaccount/

3. Download the final datasheet: 16Mb nvSRAM

12

Programmable Logic Controller by Siemens

Electronic Gaming Machineby IGT

Routerby Cisco

Avionics Subsystemby Rockwell Collins



APPENDIX



nvSRAM Product Selector Guide16Mb nvSRAMPart Number Interface

Access Time

Bus Width

Supply Voltage

I/O Voltage RTC Temp Package

CY14B116L-ZS25XI Async Parallel 25 ns x8 3.0 V 3.0 V No -40 to 85°C 44-TSOP II

CY14E116L-ZS25XI Async Parallel 25 ns x8 5.0 V 5.0 V No -40 to 85°C 44-TSOP II

CY14B116K-ZS25XI Async Parallel 25 ns x8 3.0 V 3.0 V Yes -40 to 85°C 44-TSOP II

CY14B116N-Z30XI Async Parallel 30 ns x16 3.0 V 3.0 V No -40 to 85°C 48-TSOP I

CY14B116N-Z45XI Async Parallel 45 ns x16 3.0 V 3.0 V No -40 to 85°C 48-TSOP I

CY14E116N-Z30XI Async Parallel 30 ns x16 5.0 V 5.0 V No -40 to 85°C 48-TSOP I

CY14B116N-ZSP25XI Async Parallel 25 ns x16 3.0 V 3.0 V No -40 to 85°C 54-TSOP II

CY14B116N-ZSP45XI Async Parallel 45 ns x16 3.0 V 3.0 V No -40 to 85°C 54-TSOP II

CY14V116F7-BZ30XI ONFI 1.0 30 ns x8 3.0 V 1.8 V No -40 to 85°C 165-FBGA

CY14V116G7-BZ30XI ONFI 1.0 30 ns x16 3.0 V 1.8 V No -40 to 85°C 165-FBGA

CY14B116N-BZ25XI Async Parallel 25 ns x16 3.0 V 3.0 V No -40 to 85°C 165-FBGA

CY14B116M-BZ45XI Async Parallel 45 ns x16 3.0 V 3.0 V Yes -40 to 85°C 165-FBGA

CY14B116S-BZ25XI Async Parallel 25 ns x32 3.0 V 3.0 V No -40 to 85°C 165-FBGA

CY14B116S-BZ45XI Async Parallel 45 ns x32 3.0 V 3.0 V No -40 to 85°C 165-FBGA

CY14E116S-BZ25XI Async Parallel 25 ns x32 5.0 V 5.0 V No -40 to 85°C 165-FBGA

CY 14 X 116 X X – XXX XX X X16Mb nvSRAM Part Numbering Decoder

Temperature Range: I = Industrial

Package: ZS = 44-TSOP II, Z = 48-TSOP I, ZSP = 54-TSOP II, BZ = 165-FBGA

Bus Width: L = x8, N = x16, S = x32, F = x8 NAND, G = x16 NAND

Density: 116 = 16Mb nvSRAM

Marketing Code: 14 = nvSRAM

Company ID: CY = Cypress

Voltage: B = 3.0 V, E = 5.0 V, V = 3.0 V, 1.8 V I/O

Interface: Blank = Async Parallel, 7 = ONFI 1.0

Access Time: 25 = 25 ns, 30 = 30 ns, 45 = 45 ns Pb Content: X = Pb-free



References and LinksCypress Nonvolatile Products website: www.cypress.com/nonvolatileThe source for all publicly available Nonvolatile Product documentation and collateral

Cypress Nonvolatile Products roadmap: Cypress Nonvolatile RAM Roadmap

For datasheets and NDA roadmap requests, contact yourCypress Sales Representative or email [email protected]

Application Notes: Nonvolatile Products Application Notes

Knowledge Base Articles: Nonvolatile Products Knowledge Base Articles

Cypress nvSRAM Solution Examples: Cypress nvSRAM Solution Examples

16Mb nvSRAM New Product Introduction (Engineering) 18


16Mb nvSRAM Solution Value

$10.50

$2.12

$3.70

$5.82

$9.93

$2.40

-$0.22

$0.12

$12.23

$28.55

Competitor

Battery + Casing

Power Management Circuit

BOM Integration Value

Field Battery Replacement

Faster Access Time

External Capacitor

Board Space Saving

Total Additional Value

Total Value Delivered

Target Cypress Solution: Total Cost:

12% Total Savings:

CY14B116N-Z25XI$25.12$3.43

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1 1 Ku web pricing from Digikey

2 Supplier web pricing3 $5.76 (four times in 15 years at $1.44 per battery), plus labor cost: $4.17 (four times in 15 years with labor at $50/hour and replacement time estimated at 75 seconds/battery)4 12.25 square centimeters at $0.01 per square centimeter on an eight-layer PCB


Competitor

Low-Power SRAM: Renesas R1LV1616RSA-5SIPrice: $10.501

BOM Integration

Battery + casing: Panasonic CR2477 + Memory Protection Devices Inc. BH1000G-ND casing Price: $2.121

Power management circuit: Maxim MXD1210ESAPrice: $3.702

Additional Value

Field battery replacement cost3:Value Added: $9.93

Industry’s fastest access time (25 ns): Value Added: $2.40

External capacitor: 22 µF, 6.3 V, tantalum Value Lost: -$0.223

Board space saving: Value Added: $0.124

001-91017 Owner: TUP Rev *D Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution...

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Transcript of 001-91017 Owner: TUP Rev *D Cypress Introduces the Industry’s Fastest High-Density NVRAM Solution...