報告人 :洪國慶

Outline

• INTRODUCTION• EXPERIMENTAL DETAILS• RESULTS AND DISCUSSION• CONCLUSION• REFERENCES

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INTRODUCTION

• InGaN/GaN MQW structures have a low internal quantum efficiency due to the poor confinement of carriers by the small band offset between the InGaN well layer and the GaN barrier.

• A delta doping process has recently been shown to improve the internal quantum efficiency of a quantum dot laser by introducing a high carrier injection layer, lowering the transparency current density, increasing the modulation bandwidth of the QW laser,and improving the temperature-related stability of the QW laser in the optoelectronic performance.

• In this letter, we report on an investigation of the effect of Si delta doping of the GaN barrier of a MQW on the optical and electrical properties of a InGaN/GaN UV LED with an emission wavelength of 385 nm.

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