氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make...

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Transcript of 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make...

Page 1: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

氧化物薄膜製作及電性測量

Page 2: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Indium oxide doped with tin oxide, ITO, is usIndium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. ed to make transparent conductive coatings. Thin film layers can be deposited by electroThin film layers can be deposited by electron-beam evaporation or sputtering. n-beam evaporation or sputtering.

Typical applications of ITO-coated substrates Typical applications of ITO-coated substrates include touch panel contacts, electrodes for include touch panel contacts, electrodes for LCD and electrochromic displays, energy conLCD and electrochromic displays, energy conserving architectural windows, defogging airserving architectural windows, defogging aircraft and automobile windows, heat-reflectincraft and automobile windows, heat-reflecting coatings to increase light bulb efficiency, gg coatings to increase light bulb efficiency, gas sensors, antistatic window coatings, wear as sensors, antistatic window coatings, wear resistant layers on glass, etc.resistant layers on glass, etc.

Page 3: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

實驗有缺失 : 暑假當義工 , 進一步加強 實驗物理與技術的訓練

Page 4: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

暑假提供實驗物理專題研究機會 : 奈米 , 生物磁學 , 薄膜光電 , 元件特性 , 磁共振造影術 , SQUID 應用

請與助教討論 , 提出實驗構想與方案

Page 5: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Film Properties Film Properties High conductivity (or low sheet resistance) High conductivity (or low sheet resistance)

is balanced against high transmission in the is balanced against high transmission in the visible region. Sheet resistance can be less visible region. Sheet resistance can be less than 10 Ohms/sq. with a visible transmission than 10 Ohms/sq. with a visible transmission of >80%.of >80%.

To obtain transmission near 90%, sheet To obtain transmission near 90%, sheet resistance must be >100 Ohms/sq. ITO films resistance must be >100 Ohms/sq. ITO films behave as metals to long wavelength light behave as metals to long wavelength light because of the presence of a plasma because of the presence of a plasma wavelength above 1 µm. wavelength above 1 µm.

At longer wavelengths, the film becomes At longer wavelengths, the film becomes reflecting, and the IR reflectance is related reflecting, and the IR reflectance is related to the sheet resistance of the film; sheet to the sheet resistance of the film; sheet resistance must be <30 Ohms/sq. to obtain resistance must be <30 Ohms/sq. to obtain IR reflectance >80%.IR reflectance >80%.

Page 6: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Physical Properties of Solid ITO MatePhysical Properties of Solid ITO Materialrial

Molecular Weight Molecular Weight Varies with compositionVaries with composition Melting PointMelting Point~1900° C~1900° C Color Color Light yellow to gray, depending on deLight yellow to gray, depending on de

gree of oxidationgree of oxidation Crystal DensityCrystal Density~7.14 g/cc~7.14 g/cc

Page 7: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Schematic diagram of the rf sputtering system Schematic diagram of the rf sputtering system used in this workused in this work

YBa2Cu3Oy

3 cm

3.5 cm

5.3 cm

Ar+O2 gasITO

Nd0.7Sr0.3MnO3

PrBa2Cu3Oy

rf sputtering gun

water-cooled stainless-steel shielding

sample holdershutter

L. M. Wang, H. W. Yu, H. C. Yang and H. E. Horng, Physica C, 256, 57 (1996).

Page 8: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.
Page 9: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.
Page 10: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Sputtered Film ApplicationsSputtered Film ApplicationsThe high oxide composition of high dThe high oxide composition of high density target and bulk ITO forms makensity target and bulk ITO forms make them ideal e them ideal

for low temperature applications, sucfor low temperature applications, such as polymer substrates for LCD, touch as polymer substrates for LCD, touch panels, and other high volume prodh panels, and other high volume production needs.uction needs.

Page 11: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

真空腔體

氣動閥開關

轉軸馬達渦輪幫浦

濺鍍槍

電偶真空計

加熱器電源

機械幫浦

Page 12: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

阻抗匹配箱

光纖傳輸線

Rf電源

Page 13: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

IntroductionIntroduction ExperimentsExperiments Growth of superlattices Transport Properties Results and DiscussionResults and Discussion -2 X-diffraction patternX-diffraction pattern Hall coefficientsHall coefficients Flux pinningFlux pinning DimensinalityDimensinality ConclusionConclusion

IntroductionIntroduction ExperimentsExperiments Growth of superlattices Transport Properties Results and DiscussionResults and Discussion -2 X-diffraction patternX-diffraction pattern Hall coefficientsHall coefficients Flux pinningFlux pinning DimensinalityDimensinality ConclusionConclusion

OUTLINE

Page 14: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

In this work ,In this work , we investigatedwe investigated the flux pinning, the mixed the flux pinning, the mixed

state Hall coefficients, the superconductivity and magnetstate Hall coefficients, the superconductivity and magnet

oresistance of YBCO/RMMOoresistance of YBCO/RMMO multilayers. The results are multilayers. The results are

compared with that of compared with that of YBa2Cu3Oy/PrBa/PrBa22CuCu33OOyy (YBCO/PBYBCO/PB

CO) CO) superlattices.superlattices.

In this work ,In this work , we investigatedwe investigated the flux pinning, the mixed the flux pinning, the mixed

state Hall coefficients, the superconductivity and magnetstate Hall coefficients, the superconductivity and magnet

oresistance of YBCO/RMMOoresistance of YBCO/RMMO multilayers. The results are multilayers. The results are

compared with that of compared with that of YBa2Cu3Oy/PrBa/PrBa22CuCu33OOyy (YBCO/PBYBCO/PB

CO) CO) superlattices.superlattices.

YBCO/RMMOYBCO/RMMO: YBa2Cu3Oy/R0.7M0.3MnO3 with R = La or Nd and M = Ca and Sr

YBCO/PBCOYBCO/PBCO : YBa2Cu3Oy/PrBa/PrBa22CuCu33OOyy

R

RMMO is ferromagnetic, whereas PBCO is insulating at low temperatures.

RMMO is ferromagnetic, whereas PBCO is insulating at low temperatures.

Page 15: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

The superlattices were prepared by the rf magnetron sputtering method.

Sample preparation

Page 16: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Crystal Structure of YBa2Cu3Oy (YBCO) and La0.7Ca0.3MnO3 (LCMO):

Ba

Ba

Y

Cu

O

a (3.89 Å)

b (3.82 Å)

c (11.7 Å)

Cu

La,Ca

Mn

O

b (5.46 Å)

c (7.74 Å)

a (5.47 Å)

YBa2Cu3Oy La0.7Ca0.3MnO3

Page 17: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Surface morphology of an as grown Surface morphology of an as grown YBCO film with root mean square YBCO film with root mean square

roughness of about 8.2 Åroughness of about 8.2 Å

1m

Page 18: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

La0.7Ca0.3MnOy Scanned area = 30m30m; RMS roughness = 8.4 Å

● AFM image ● AFM image

Page 19: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

● X-ray diffraction● X-ray diffraction

θ

θ

2d sinθ= λ

d

n n+1

D

LCMOYBCO

STO

2D sinθ= λD = /2(sinn+1 - sinn)

Satellite peak*

**

*

Page 20: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

-2 X-diffraction patternX-diffraction pattern

Page 21: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

10 20 30 40 50 602 (degree)

0

1

2

3

4

Inte

nsit

y (A

rb. U

nit)

YBC O /PBC O( 96 /60 )d = 156

(001

)

(002

)

(003

)

(004

)

(005

)

(006

)+su

bstr

ate

(007

)

6 7 8 9

(001

)

-2 x-ray diffraction pattern of a (YBa2Cu3Oy/PrBa2Cu3Oy) (96 Å/60 Å)10 superlattice.

10

Page 22: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

磁化量 磁化量 M M 的測量的測量

Page 23: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

0 1 0 0 2 0 0 3 0 0T em p era tu re (K )

0

1 0 0

2 0 0

3 0 0

4 0 0

M (

emu/

cm3 )

T h e L a 0 .7C a 0 .3M n O 3 th in filmT h ick n ess = 1 9 0 0Å

H = 1 0 0 0 G a u ss

`

0 1 0 0 2 0 0 3 0 0T em p era tu re (K )

0

1 0 0

2 0 0

3 0 0

4 0 0

M (

emu/

cm3 )

T h e L a 0 .7C a 0 .3M n O 3 th in filmT h ick n ess = 1 9 0 0Å

H = 1 0 0 0 G a u ss

`0 1 0 0 2 0 0 3 0 0T (K )

1 0

2 0

3 0

4 0

M (

emu/

cm3 )

100 150 200T (K )

0

4

1/

T c = 2 2 2 K

N d 0 .7 S r0 .3M n O 3

H = 1 0 0 G

NSMO and LCMO films show the Curie temperature at 222 K and 250 K respectively.

Page 24: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

Transport Measurements in magneTransport Measurements in magnetic fieldstic fields

ResistivityResistivity Hall measurementsHall measurements

Page 25: 氧化物薄膜製作及電性測量. Indium oxide doped with tin oxide, ITO, is used to make transparent conductive coatings. Thin film layers can be deposited by electron-beam.

I+ I-V1

V3V2Gold dots

W LH

W=500 μ mL =700 μ m

H

● The pattern for resistivity and Hall measurements● The pattern for resistivity and Hall measurements

V = V3-V2→Resistance

Vh = V2-V1→Hall coefficient