¼ ò| / 0 Q / 2008, 24, 11-20 具有頻帶外終端技術之...
Transcript of ¼ ò| / 0 Q / 2008, 24, 11-20 具有頻帶外終端技術之...
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WiMAX
1 2 2 2
(GaAs)(PHEMT)
(WiMAX) 2.6 GHz
(HMIC)WiMAX 2.5 2.69 GHz
(MMDS)WiMAX2.6 GHzWiMAX
(NF) 2 dB 8 dB 1 dB(IP1 dB)
0 dBm(IIP3) 7.5 dBm 1.8 V
8 mW
1 2
2008, 24, 11-20
97 3 20 97 6 5
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12
Design of Low-Noise Amplifier with Out-of-Band Termination for
WiMAX Applications
Jian-Ming Wu* Neng-Kai Yang** Deng-Yang Tsao** Simon C. Li**
Abstract
A 2.6 GHz highly linear low-noise amplifier (LNA) is designed and implemented in hybrid microwave integrated circuit (HMIC) using GaAs pseudomorphic high electron mobility transistor (PHEMT) for WiMAX applications. The center frequency of a WiMAX LNA is designed at 2.6 GHz due to the selection of U.S. multi-point microwave distribution system (MMDS) band of frequency range from 2.5 to 2.69 GHz. The proposed design is based on the out-of-band termination. The second-order harmonic of a WiMAX LNA presents low impedance for grounding due to the out-of-band termination. A LNA eliminating the second-order nonlinear term enhances the linearity significantly. The crucial measured results form a WiMAX LNA in a noise figure (NF) is less than 2 dB, a power gain is greater than 8 dB, an input 1 dB compression point (IP1 dB) is equal to 0 dBm, and an input third-order intercept point (IIP3) is equal to 7.5 dBm. A supply voltage of 1.8 V is used and a power consumption is 8 mW.
Key Words: Low-noise amplifier (LNA), out-of-band termination, linearization, WiMAX.
* Assistant Professor, Department of Electronic Engineering, National Kaohsiung Normal University. ** Professor, Graduate, Institute of Communication Engineering, National University of Tainan.
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WiMAX 13
(Wireless local area network, WLAN)(Cellular network)[1][2]IEEE 802.16 (Worldwide interoperability for microwave access, WiMAX)[3]WiMAX (Orthogonal frequency division multiplexing, OFDM)
(1)(Source degeneration)[4](2)(Predistortion) [5](3)(Postdistortion)[6](4)(Feedforward)[7]-[9](5)(Diode linearizer)[10](6)(Out-of-band termination)[11]-[17]
(Single chip)
(Third-order intermodulation product, IM3)(Noise figure, NF)
WiMAX(GaAs)(Enhancement mode pseudomorphic high electron mobility transistor, E-PHEMT) WiMAX Agilent Technologies E-PHEMT [18](Hybrid microwave integrated circuit, HMIC)
(Feedback)(Re-mixing)(Source impedance) E-PHEMT vs
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14
vgsCgsidgm E-PHEMT Z1 Z2 [17](Input third-order intercept point, IIP3)
3 31 1
1 ,6Re( ( )) ( ) ( ) ( ,2 )
IIPZ H A
=
(1)
= 2f (Two-tone) f = 2ff H()A1()
22
31 1
2 2 1( , 2 ) .3 ( ) (2 )gg
g g g g
= + + + (2)
(2) g1g2 g3 Volterra k() A1()Z2 Z1()H() A1() WiMAX (, 2)(, 2)
Z1
Cgs+vgs-
Z2
id=gmvgs
G D
S
vs
E-PHEMT
E-PHEMT
21
1(2 ) ,Zg
>> (3)
E-PHEMT (Unity-gain frequency) fT
1 2 ,gs
gC
>> (4)
1 2(2 ) (2 ),
2T
Z Zff
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WiMAX 15
4
11
3 31 1
( ) 11 6 ( )
,2 R e ( ( ) ) ( ) ( )
G S t
D
V V gI Z
I IPZ H A
+
(6)
VGS-Vt E-PHEMT (Thresold voltage)ID
(6) 1( )Z
WiMAX WiMAX 1( )Z
WiMAX WiMAX(Multi-point microwave distribution system, MMDS) 2.5 2.69 GHz
WiMAX WiMAX (Heterodyne architecture)
WiMAX 2.5 2.69 GHz MMDS 2.6 GHz WiMAX WiMAX [3](Cascade) WiMAX 8 dB1.5 dB 5 dBm WiMAX
Q1 LS LD WiMAX (Q2 Q3)(R1R2 R3)(L1) 2.52.69 GHz2.52.69 GHz 2.5 2.69 GHz 2.5 2.69 GHz
RFBPF LNA
VGADownConverter
LO
RF IF
IFBPF
WiMAX
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16
WiMAX
RF BPF LNA Down Converter VGA IF BPF Power Gain (dB) -0.35 8 10 46/25 -0.1 NF (dB) 0.35 1.5 10 7/30 0.1 IIP3 (dBm) 100 5 -5 23/17 100 Cascade Power Gain (dB) -0.35 7.65 17.65 63.65/42.65 63.55/42.55 Cascade NF (dB) 0.35 1.85 4.88 4.98/13.06 4.98/13.06 Cascade IIP3 (dBm) 100 5 -5.04 22.93/15.22 22.83/15.12
Input MatchingNetwork
LD
RFinQ1
Q2
LS
VDD
Q3
C1C2
R1 R2
R3
RFout
Vdc
C3L1
Ibias
ID
Output MatchingNetwork
Bias Circuitfor
Out-of-BandTermination
WiMAX
WiMAX Agilent Technologies GaAs E-PHEMT Agilent Technologies GaAs E-PHEMT -(I-V) 1.8 V 8 mWWiMAX 23 mm 18 mm WiMAX R&S ZVB8 Mini-Circuits NC346C R&S FSP R&S SMJ 100A R&S FSP 1 dB (Input 1 dB compression point, IP1 dB)
0 0.5 1 1.5 2
VDS (V)
0
1
2
3
4
5
6
7
8
9
10
I DS
(mA
)
Agilent Technologies GaAs E-PHEMT I-V
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WiMAX 17
WiMAX
Vector Signal GeneratorR&S SMJ 100A
Network AnalyzerR&S ZVB8
Spectrum AnalyzerR&S FSP
WiMAX LNA
Noise SourceMini-Circuits NC346C
Vector Signal GeneratorR&S SMJ 100A
Network AnalyzerR&S ZVB8
Spectrum AnalyzerR&S FSP
WiMAX LNA
Noise SourceMini-Circuits NC346C
WiMAX
WiMAX 2.5 2.69 GHz WiMAX 1 dB 2 dB 2.5 2.69 GHz 8 dB 2.6 GHz 1.5 dB 8.1 dB WiMAX
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18
2.5 2.55 2.6 2.65 2.7
Frequency (GHz)
0
1
2
3
4
5
Noi
se F
igur
e (d
B)
5
6
7
8
9
10
Power G
ain (dB)
Power GainNoise Figure
WiMAX
2.6 GHz 20 MHz WiMAX(Channel bandwidth)WiMAX 1 dB 0 dBm 7 dBm 7.5 dBm WiMAX WiMAX 7.5 dBm WiMAX [9], [19]-[21] WiMAX 1 dB
-25 -20 -15 -10 -5 0 5 10
Input Power (dBm)
-70
-60
-50
-40
-30
-20
-10
0
10
20
Out
put P
ower
(dB
m)
IIP3=7.5dBmIP1 dB=0dBm
Fundamental
IM3
WiMAX
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WiMAX 19
WiMAX
Reference Frequency (GHz) IIP3
(dBm) P1 dB
(dBm) NF
(dB) Power Gain
(dB) Pdiss
(mW) This Design 2.6 7.5 0 1.5 8.1 8
[9] 2.6 3 -13 2.95 15.2 17 [19] 2.4 4 -7 2.9 10.1 11.7 [20] 0.9 6.7 -7 3 12.2 20 [21] 2.45 -1.5 --- 2.88 14.7 10.5
WiMAX 2.6 GHz 2.5 2.69 GHz WiMAX 1.8 V 8 mW 2 dB 8 dB 1 dB 0 dBm 7.5 dBm
NSC 96-2221-E-017-014
[1] IEEE Std 802.11a-1999, Part11: wireless LAN medium access control (MAC) and physical layer (PHY) specifications: high-speed physical layer in the 5 GHz band, IEEE Standard, Dec. 1999.
[2] Juha Korhonen (2003). Introduction to 3G Mobile Communication, MA: Artech House Inc. [3] IEEE Std. 802.16e/D6, Part 16: Air interface for fixed broadband wireless access system,
Amendment 2: for physical and medium access control layers for combined fixed and mobile operation in licensed band, IEEE Standard, Feb. 2005.
[4] B. Razavi (2001). Design of Analog CMOS Integrated Circuits, NY: McGraw- Hill Inc. [5] G. Vitzilaios, Y. Papananos, Theodoratos, and G. K. S. Vryssas (2006). Magnetic-feedback-
based predistortion method for low-noise amplifier linearization, IEEE Trans. Circuits Syst. II, Exp. Briefs, 53, 1441- 1445.
[6] N. Kim, V. Aparin, K. Barnett, and C. Persico (2006). A cellular-band CDMA 0.25 m CMOS LNA linearized using active post-distortion, IEEE J. Solid-State Circuits, 41, 130-134. July 2006.
[7] F. Iturbide-Sanchez, H. Jardon-Aguilar, and J. A. Tirado-Mendez (2002). Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage, Electron. Lett., 38, 536-538.
[8] Y. S. Youn, J. H. Chang, K. J. Koh, Y. J. Lee, and H. K. Yu (2003). A 2GHz 16 dBm IIP3 low noise amplifier in 0.25 um CMOS technology, IEEE Int. Solid-State Circuits Conf., paper 25.7.
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[9] H. Y. Liao, Y. T. Lu, J. D. S. Deng, and H. K. Chiou (2007). Feed-forward correction technique for a high linearity WiMAX differential low noise amplifier, Radio-Frequency Integration Technology, 218-221.
[10] E. Taniguchi, T. Ikushima, K. Itoh, and N. Suematsu (2003). A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier, IEEE Trans. Microw. Theory Tech., 51, 414-421.
[11] K. Vennema (1996). Ultra low noise amplifiers for 900 and 2000 MHz with high IIP3, Philips Semiconductors App. Note.
[12] V. Aparin and C. Persico (1999). "Effect of out-of-band terminations on intermodulation distortion in common-eminer circuits," in IEEE MTT-S Int. Microwave Symp. Dig., 977-980.
[13] K. L. Fong (2000). High-frequency analysis of linearity improvement technique of common-emitter trans-conductance stage using a low-frequency trap network, IEEE J. Solid-State Circuits, 35, 1249-1252.
[14] P. Shah, P. Gazzerro, V. Aparin, R. Sridhara, and C. Narathong (2000). A 2 GHz low distortion low-noise two-stage LNA employing low-impedance bias terminations and optimum inter-stage match for linearity, in Proc. Europ. Solid-State Circ. Conf., 213-216.
[15] J. Vuolevi and T. Rahkonen (2000). The effects of source impedance on the linearity of BJT common-emitter amplifiers, IEEE Int. Symp. on Circ. and Syst., 197-200.
[16] J. Lee, G. Lee, G. Niu, J. D. Cressler, J. H. Kim, J. C. Lee, B. Lee, and N. Y. Kim (2002). The design of SiGe HBT LNA for IMT-2000 mobile application, in IEEE MTT-S Int. Microwave Symp. Dig., 1261-1264.
[17] V. Aparin and L. E. Larson (2003). Linearization of monolithic LNAs using low-frequency low-impedance input termination, Europ. Solid-State Circ. Conf., 137-140.
[18] Agilent ATF-55143 low noise enhancement mode pseudomorphic HEMT in a surface mount plastic package, Data Sheet, Agilent Technologies, 2004.
[19] L. H. Lu, H. H. Hsieh, and Y. S. Wang (2005). A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier, Microwave and Wireless Components Lett., 15, 685-687.
[20] W. Zhuo, S. Embabi, J. Pineda de Gyvez, and E. Sanchez-Sinencio (2000) Using capacitive cross-coupling technique in RF low noise amplifiers and down-conversion mixer design, in Proc. Europ. Solid-State Circ. Conf., 116-119.
[21] R. Point, M. Mendes, and W. Foley (2002). A differential 2.4GHz switched-gain CMOS LNA for 802.11b and Bluetooth, IEEE Conference on Radio and Wireless, 221-224.