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MIM Capacitors With Crystalline-$\hbox{TiO}_{2}/ \hbox{SiO}_{2}$ Stack Featuring High Capacitance Density and Low Voltage Coefficient
Effect of Nitrogen Passivation on the Performance of MIM Capacitors With a Crystalline- $\hbox{TiO}_{2}/\hbox{SiO}_{2}$ Stacked Insulator
Electrical Characteristics for Flash Memory With Germanium Nitride as the Charge-Trapping Layer
Comparison of Ge Surface Passivation Between $ \hbox{SnGeO}_{x}$ Films Formed by Oxidation of Sn/Ge and $ \hbox{SnGe}_{x}/\hbox{Ge}$ Structures
Ge-stabilized tetragonal ZrO[sub 2] as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate
![Ge-stabilized tetragonal ZrO[sub 2] as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate](https://static.fdocuments.net/doc/330x215/5750ab7d1a28abcf0cdfdcf1/ge-stabilized-tetragonal-zrosub-2-as-gate-dielectric-for-ge-metal-oxide-semiconductor.jpg)
