Froth Flotation

Processes Encountered in Plastic Industries

Evaporator

Polarization Effects in Semiconductors || Theoretical Approach to Polarization Effects in Semiconductors

Polarization Effects in Semiconductors || Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs)

Polarization Effects in Semiconductors || Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy

Partial bitstream protection for low-cost FPGAs with physical unclonable function, obfuscation, and dynamic partial self reconfiguration

Boosting Profiled Cache Timing Attacks With A Priori Analysis

[IEEE 2011 Workshop on Fault Diagnosis and Tolerance in Cryptography (FDTC) - Tokyo, Japan (2011.09.29-2011.09.29)] 2011 Workshop on Fault Diagnosis and Tolerance in Cryptography -

Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering

[IEEE 2013 Workshop on Fault Diagnosis and Tolerance in Cryptography (FDTC) - Los Alamitos, CA, USA (2013.08.20-2013.08.20)] 2013 Workshop on Fault Diagnosis and Tolerance in Cryptography

Polarization Effects in Semiconductors ||

Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

A comparative study of efficacy of cultured versus non cultured melanocyte transfer in the management of stable vitiligo

Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures

[IEEE 2013 IEEE 19th International On-Line Testing Symposium (IOLTS) - Chania (2013.7.8-2013.7.10)] 2013 IEEE 19th International On-Line Testing Symposium (IOLTS) - On-line testing

Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Novel logic devices based

Threshold Voltage Control in $\hbox{Al}_{0.72} \hbox{Ga}_{0.28}\hbox{N/AlN/GaN}$ HEMTs by Work-Function Engineering