Post on 02-Jun-2022
11/19/2020
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Institute of Electronic Packaging Technology and ReliabilityBeijing University of Technology
Tong An Ph.D./Associate Professor
Thermal Mechanical Reliability of IGBT Power Electronics Packaging
Outline
1. Introduction
2. Tested IGBT Modules and Power Cycling Test Bench
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
4. Thermal and Mechanical Analyses of IGBT Modules
5. A Lifetime Prediction Method of IGBT Modules
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Outline
1. Introduction
2. Tested IGBT Modules and Power Cycling Test Bench
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
4. Thermal and Mechanical Analyses of IGBT Modules
5. A Lifetime Prediction Method of IGBT Modules
1. Introduction
Institute of Electronic Packaging Technology and Reliability was founded in 2006. By October 2020, it
has 7 full-time teaching staff, 31 postgraduate students (including 6 doctoral students and 25 master students).
By the end of 2019, we obtained 8 projects of National Natural Science Foundation of China, 4 branch project
of National Science and Technology Major Project of the Ministry of Science and Technology of
China, 1 branch project of National Key R&D Program of China, more than 20 entrusted projects by
enterprises. We have published more than 160 articles, have more than 60 patents.
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Outline
1. Introduction
2. Tested IGBT Modules and Power Cycling Test Bench
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
4. Thermal and Mechanical Analyses of IGBT Modules
5. A Lifetime Prediction Method of IGBT Modules
2. Tested IGBT Modules and Power Cycling Test Bench
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New Energy Generation Systems
Locomotive Tractions
AerospaceNew Energy Generation Systems
Locomotive Tractions
Aerospace
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2. Tested IGBT Modules and Power Cycling Test Bench
1200 V/450 A IGBT module
Cross-section schematic of the IGBT module 7
IGBTIGBT DiodeDiode
CeramicCeramic
Heat sinkHeat sink
Al metallizationAl metallization
Thermal grease
Thermal grease
Al bond wireAl bond wire
Chip solderChip solder
CopperCopper
Base solerBase soler
Base plateBase plate
IGBT Diode
Ceramic
Heat sink
Al metallization
Thermal grease
Al bond wire
Chip solder
Copper
Base soler
Base plate
Al, 23.5Si, 2.6SnAgCu, 12~23Cu, 17.5Al2O3, 6.8 or AlN, 4.7AlSiC, 7.5
Al, 23.5Si, 2.6SnAgCu, 12~23Cu, 17.5Al2O3, 6.8 or AlN, 4.7AlSiC, 7.5
CTE: 1×10-6/℃CTE: 1×10-6/℃
Al, 23.5Si, 2.6SnAgCu, 12~23Cu, 17.5Al2O3, 6.8 or AlN, 4.7AlSiC, 7.5
CTE: 1×10-6/℃
Data acquisitionsystem
Data acquisitionsystem
PowersupplyPowersupply
Drivingandprotectsystem
Drivingandprotectsystem
Water cooling heat dissipation deviceWater cooling heat dissipation device
DUTDUT
DUTDUTDrive circuitDrive circuit
Data acquisitionsystem
Powersupply
Drivingandprotectsystem
Water cooling heat dissipation device
DUT
DUTDrive circuit
2. Tested IGBT Modules and Power Cycling Test Bench
Prototype of the test setup 8
Configuration of the DC power cycling test
Configuration of the PWM power cycling test
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Outline
1. Introduction
2. Tested IGBT Modules and Power Cycling Test Bench
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
4. Thermal and Mechanical Analyses of IGBT Modules
5. A Lifetime Prediction Method of IGBT Modules
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
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Control signal and junction temperature profile
Pico Scan TM 2500 Atomic Force Microscope
Pico Scan TM 2500 Atomic Force Microscope
3D surface morphology3D surface morphology
RTS-9 Dual Electrical Measuring Four Probe Tester
RTS-9 Dual Electrical Measuring Four Probe Tester
Resistance testResistance test
Test positionsTest positions
Surface morphologySurface morphology
Quanta 650 Scanning Electron Microscope
Quanta 650 Scanning Electron Microscope
Cross section imageCross section image
Helios Nanolab 650 Double Beam Scanning Electron Microscopy
Helios Nanolab 650 Double Beam Scanning Electron Microscopy
P1 P2 P3P1 P2 P3
P1: the central area of the chipP2: the area near the bond wire heelP3: the area at the edge of the chip
P1: the central area of the chipP2: the area near the bond wire heelP3: the area at the edge of the chip
I
v
Pico Scan TM 2500 Atomic Force Microscope
3D surface morphology
RTS-9 Dual Electrical Measuring Four Probe Tester
Resistance test
Test positions
Surface morphology
Quanta 650 Scanning Electron Microscope
Cross section image
Helios Nanolab 650 Double Beam Scanning Electron Microscopy
P1 P2 P3
P1: the central area of the chipP2: the area near the bond wire heelP3: the area at the edge of the chip
Scanning electron microscopy (SEM)Atomic force microscopy (AFM) Four-point probe testerFocused ion beam (FIB)
Surface morphologyRoughnessResistanceCross-section observation
A. Al metallization layer testing procedure
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(a) 0 kcycles Module A0%-I(a) 0 kcycles Module A0%-I (b) 100 kcycles Module B50%-I(b) 100 kcycles Module B50%-I
(c) 164 kcycles Module C85%-I(c) 164 kcycles Module C85%-I (d) 193 kcycles Module D100%-I(d) 193 kcycles Module D100%-I
(a) 0 kcycles Module A0%-I (b) 100 kcycles Module B50%-I
(c) 164 kcycles Module C85%-I (d) 193 kcycles Module D100%-I
20 μm 20 μm
20 μm 20 μm
Regularstructure
Increasingroughness
Significantlyconstruction
Extrusionappear
0 kcycles
100 kcycles
164 kcycles
193 kcycles
Surface degradationSurface degradation
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
B. SEM images of the Al metallization layer
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(a) 0 kcycles Module A0%-I (b) 100 kcycles Module B50%-I
(c) 164 kcycles Module C85%-I (d) 193 kcycles Module D100%-I
5 μm5 μm
5 μm 5 μm
Intact
Intergranularcracks
Crackspropagation
Presentgrooves
0 kcycles
100 kcycles
164 kcycles
193 kcycles
Substantial degradation
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
C. Cross-section observations
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(a) 0 kcycles Module A0%-I(a) 0 kcycles Module A0%-I (b) 100 kcycles Module B50%-I(b) 100 kcycles Module B50%-I (c) 164 kcycles Module C85%-I(c) 164 kcycles Module C85%-I (d) 193 kcycles Module D100%-I(d) 193 kcycles Module D100%-I
AFM images of the Al metallization layerAFM images of the Al metallization layer
(a) 0 kcycles Module A0%-I (b) 100 kcycles Module B50%-I (c) 164 kcycles Module C85%-I (d) 193 kcycles Module D100%-I
0
0.3
0.6
0.9
1.2
1.5
1.8
μm
0
0.5
1
1.5
2.5
3.5
4
μm
2
3
0
0.5
1
1.5
2.5
3.5
4
μm
2
3
0
0.5
1
1.5
2.5
3.5
4
μm
2
3
AFM images of the Al metallization layer
Hei
ght p
rofil
es(μ
m)
Hei
ght p
rofil
es(μ
m)
x or y (μm)x or y (μm)
λiλi BaselineBaseline
x or yx or y
AlAl
zizi
Path 3Path 3
zizi
Path 4Path 4
Path 4Path 4
Path 3Path 3
Path 1Path 1
Path 2Path 2
zz
zz
xx
yy
Path 2Path 2
Path 1Path 1
Definition of the surface roughness of the Al metallization layerDefinition of the surface roughness of the Al metallization layer
0 10
20
30
40
μm
0 10 20 30 40μm
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0 0 5 10 15 20 25 30 35 40
1.00.50.0
-0.5-1.00.50.0
-0.5-1.00.50.0
-0.5-1.00.50.0
-0.5-1.0
Hei
ght p
rofil
es(μ
m)
x or y (μm)
λi Baseline
x or y
Al
zi
Path 3
zi
Path 4
Path 4
Path 3
Path 1
Path 2
z
z
x
y
Path 2
Path 1
Definition of the surface roughness of the Al metallization layer
a
1, d d
A
S
z x y x yA
Arithmetical mean roughness
2q
1
1 N
ii
R zN
ave1
1 N
iiN
Root mean square roughness
Average distance between two neighboring asperities
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
D. Surface roughness evolution of the Al metallization layer
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Relationship between the electrical resistance and the morphology parameters of the Al metallization layer
Surface roughness distribution of the Al metallization layer during the power cycling process
The distribution of resistance variation in the Al metallization layer
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
E. Effect of the Al metallization layer surface morphology on its electrical resistance
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Relationship between the electrical resistance and the morphology parameters of the Al metallization
layer
Finite element model of the Al metallization layer
Model No.
Model I Model II Model III Model IV Model V Model VI Model VII Model VIII
Rq (μm) 0.1 0.3 0.5 0.7 0.6 0.6 0.6 0.6
λave (μm) 4.0 4.0 4.0 4.0 4.0 5.0 6.0 7.0
Resistance (mΩ)
6.926 7.543 8.426 9.013 8.925 8.016 7.542 6.984
Morphology parameters and the results of the FEA
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
E. Effect of the Al metallization layer surface morphology on its electrical resistance
Outline
1. Introduction
2. Tested IGBT Modules and Power Cycling Test Bench
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
4. Thermal and Mechanical Analyses of IGBT Modules
5. A Lifetime Prediction Method of IGBT Modules
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4. Thermal and Mechanical Analyses of IGBT Modules
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Condition Waveform of the loading currentDC
current (A)fsw (Hz) δ ton (s) toff (s)
DC-1 140 0.125 0.5 4 4
DC-2 140 20 0.5 0.025 0.025
DC-3 140 5 k 0.5 1×10-4 1×10-4
(fsw: Switching frequency, fop: Operation frequency, δ: Duty cycle, ton: Power-on duration,toff: Power-off duration)
Condition Waveform of the loading currentMax/RMS current (A)
fsw (Hz) fop (Hz) ton (s) toff (s)
PWM-1 200/140 10 k 40 4 4
PWM-2 200/140 5 k 40 0.025 0.025
PWM-3 200/140 10 k 40 0.025 0.025
Test conditions of DC power cycling tests
Test conditions of PWM power cycling tests
Multiple time-delayed acquisition method
A. Test conditions of power cycling tests
Prototype of the test setup
4. Thermal and Mechanical Analyses of IGBT Modules
18PWM-I test conditionDC-I test condition
DC-I test condition
PWM-I test condition
Temperature distributions of the IGBT chip at t = 3.895 s
B. Evolution of temperature in the IGBT chip over time
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4. Thermal and Mechanical Analyses of IGBT Modules
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C. Electrical-thermal-mechanical finite element analysis
Comparison of temperature distribution of the IGBT module at the power-off moment under the
DC-I test condition
Comparison of S11 stress under different test conditions
3D FE model of the IGBT module
Outline
1. Introduction
2. Tested IGBT Modules and Power Cycling Test Bench
3. Effect of Microstructure Evolution of the Aluminum Metallization Layer
4. Thermal and Mechanical Analyses of IGBT Modules
5. A Lifetime Prediction Method of IGBT Modules
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5. A Lifetime Prediction Method of IGBT Modules
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Start Cycle numberi=1
Simulation timets=0
Power loss model
con ce0_25 C V j c
2ce_25 C r j c
= + 25 C
+ 25 C
P V K T I
r K T I
Electrothermal model
ts=ts+ts
ts=tcycle_i
Degradation model of rce
0
0 j0 0
B javg
0 ,
exp ,n
D t t
Q a TD C t t t t
K T
Increment of rce
1ce_25 C
1
di
i
N t
ti
r D t
rce_25℃≥8%rce0_25℃
rce_25℃=rce0_25℃+rce_25℃
i=i+1ts=0
Tjavg & Tj calculation
Accumulated Eloss
jmax jminjavg
j jmax jmin
=2
=
T TT
T T T
1
loss loss,1
cycle_1
di
i
N t
iti
N
ii
E P t t
t t
Number of cycles to failure
Nf =iEnd
Yes
Yes
No
No
Input parametersIc ,, Tj0
Water temperatureTw
5. A Lifetime Prediction Method of IGBT Modules
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Electrothermal ModelElectrothermal Model Degradation Model of rCEDegradation Model of rCEElectrothermal Model Degradation Model of rCE
The lifetime prediction of IGBT module implemented in Matlab/Simulink
DC PC test condition Tjavg (℃) Tj (℃)Nf (cycles) Relative
errorPredicted lifetime
Test result
AIload=400A, Tw=45℃, ton/toff=2s/2s
98.0 69.0 183,811 165,000 11.4%
BIload=400A, Tw=45℃,ton/toff=4s/4s
98.3 78.5 50,760 37,500 35.4%
CIload=400A, Tw=45℃,ton/toff=6s/6s
98.5 84.8 25,754 17,500 47.2%
DIload=400A, Tw=55℃,ton/toff=2s/2s
107.8 69.6 129,272 ‐‐ ‐‐
EIload=400A, Tw=65℃,ton/toff=2s/2s
118.4 70.4 98,262 ‐‐ ‐‐
DC PC test conditions and predicted lifetimes
Predicted lifetimes obtained by different methods