Practical setup of power electronics lab power semicondutor devices [ scr, mosfet, igbt, gto,...

Post on 21-Aug-2014

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Some common power devices are the power diode, thyristor, power MOSFET, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to support a larger reverse-bias voltage in the off-state. Structural changes are often made in a power device in order to accommodate the higher current density, higher power dissipation, and/or higher reverse breakdown voltage. The vast majority of the discrete (i.e., non-integrated) power devices are built using a vertical structure, whereas small-signal devices employ a lateral structure. With the vertical structure, the current rating of the device is proportional to its area, and the voltage blocking capability is achieved in the height of the die. With this structure, one of the connections of the device is located on the bottom of the semiconductor die.

Transcript of Practical setup of power electronics lab power semicondutor devices [ scr, mosfet, igbt, gto,...

Electrical Final Year 2014 Batch

PRACTICAL SETUP

OF

POWER ELECTRONICS LAB

CONTENTS

1) SCR

2) TRAIC

3) GTO

4) BJT

5) IGBT

6) MOSFET

7) R-FIRING CKT

8) RC-FIRING CKT

9) UJT-FIRING CKT

SILICON CONTROLLED RECTIFIER (SCR)

7000 v5000 Amp

V-I Characteristics of SCR

APPLICATIONS OF SCR :-

• Speed control for motors• Battery-charging regulator• Temperature controller circuit• Emergency-lighting system• Temperature control for electric hot plate• Dimmer switch for domestic lighting• Dimmer control for stage lighting.

Triac

1200 V1000 Amp

SYMBOL & LAYER DIAGRAM

V-I CHRACTERISTICS OF TRAIC

Applications of the TRIAC

The TRIAC as a bidirectional thyristor has various applications. Some of the popular applications of the

TRIAC are as follows:

(i) In speed control of single-phase ac series or universal motors.

(ii) In food mixers and portable drills.

(iii) In lamp dimming and heating control.

(iv) In zero-voltage switched ac relay.

GATE TURN OFF THYRISTOR

(GTO)5000 v3000 Amp

CIRCUIT SYMBOL AND STRUCTURE OF GTO

V-I CHRATERISTICS OF GTO

GTO Applications

• Counters• Pulse generators• Oscillators• Voltage regulators

Bipolar Junction Transistor(BJT)

1400 v400 Amp

LAYER DIAGRAM

V-I CHARACTERISTIC OF BJT

Insulated Gate Bipolar Transistor (IGBT) 1200 v

500 Amp

Vertical cross section of an IGBT

V-I characteristics of an IGBT

APPLICATIONS:

The IGBT is mostly used in high-speed switching devices. They have switching speeds greater than those of bipolar power transistors.

Robot welding machine.

Uninterruptible Power Supply.

Motor control.

Metal Oxide Semiconductor Field Effect Transistor (MOSFET )

1000 v50 Amp

Schematic construction of a MOSFET

V-I CHARATERISTIC OF MOSFET

Applications of Power Devices

R-FIRING CIRCUIT

R-C FIRING CIRCUIT

UJT TRIGRING CIRCUIT

UJT-Firing Circuit&

Electronic Fan Regulator

THE ENDTHANK YOU