Post on 17-Jan-2016
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
Characterization of n-on-p devices Characterization of n-on-p devices fabricated at ITC-irstfabricated at ITC-irst
Nicola Zorzi
ITC-irst - Trento (Italy)
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
HistoryHistory
SMART collaboration
End 2003 finalized the layout
May 2004 first batch of p-on-n devices on different substrates (FZ, MCz, Cz, EPI) Various samples sent for irradiation.
August 2004 first batch of n-on-p devices with same layout Some samples sent for irradiation.
January 2005 irradiated samples available for test
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
LayoutLayout
14 + 9 + 6 Test pads including diode, MOS, gated diodes, resistor, etc.
27 MG diodes
5 (pitch 50m) + 5 (pitch 100m)Microstrip detectors AC coupled, poly-resistor biased
10 Small MG Diodes
Area 13.6 mm2
die 6x6mm2
Area 2.3 mm2
die 4x4mm2
die 6x47mm2
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p batchn-on-p batch
# sub-type comments
3 FZ 525 p-spray 3E12
3 FZ 525 p-spray 5E12
3 FZ 200 p-spray 3E12
3 FZ 200 p-spray 5E12
6 MCz no OG; p-spray 3E12
5 MCz no OG; p-spray 5E12
FZ <100> p-type >5000cm 200m
MCz <100> p-type >1.8kcm 300m
FZ <100> p-type >5000cm 525m
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p – IV on MG diodes (1)n-on-p – IV on MG diodes (1)
High dose p-spray
1.00E-12
1.00E-11
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
0 100 200 300 400 500 600 700 800 900
1.00E-11
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
0 100 200 300 400 500 600 700 800 900
Diode current (A) vs Voltage (V) GR current (A) vs Voltage (V)
Leakage current ~ 10nA/cm2
Measurements on 3 diodes per 8 wafers
Breakdown voltage ~200-300V
blue=FZ, red=MCz blue=FZ, red=MCz
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
1.00E-12
1.00E-11
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
0 200 400 600 800 1000 12001.00E-11
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
0 200 400 600 800 1000 1200
n-on-p – IV on MG diodes (2)n-on-p – IV on MG diodes (2)
Diode current (A) vs Voltage (V) GR current (A) vs Voltage (V)
Leakage current ~ 10nA/cm2 Breakdown voltage >1000V
Low dose p-sprayMeasurements on 3 diodes per 9 wafers
blue=FZ, red=MCz blue=FZ, red=MCz
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p – CV on diodes (1)n-on-p – CV on diodes (1)
FZ 200
64
66
68
70
72
74
76
78
80
82
T3 T5 T7 T8 T9 T10 T11 T12 T14
Wafer site
Vfd
[V]
008 014 024 037064 068 084
FZ 200
2.1E+12
2.2E+12
2.3E+12
2.4E+12
2.5E+12
2.6E+12
2.7E+12
T3 T5 T6 T7 T8 T9 T10 T11 T12 T14
Wafer siteN
a [c
m-3
]008 014 024 037064 068 084
Measurements on FZ wafers
Depletion voltage very uniform at the wafer level.
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p – CV on diodes (2)n-on-p – CV on diodes (2)
Measurements on MCz wafers
1.0E+12
1.5E+12
2.0E+12
2.5E+12
3.0E+12
3.5E+12
4.0E+12
0 50 100 150 200 250 300Depletion width [ m]
Nd [
cm-3
]
SMART1 - W091Doping concentration lower than n-type MCz (~2e12 against 7e12) but fluctuations of the same order
Example of Doping profile from CV measurement
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p – CV on diodes (3)n-on-p – CV on diodes (3)
Probably due to fluctuations of the oxygen concentration.
Quite high doping variations!!
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
Microstrip minisensors
3 51 2 4 8 106 7 9
det# pitchp+ implant
widthpolysilicon
width metal width[um] [um] [um] [um]
1 50 15 10 232 50 20 15 283 50 25 20 334 50 15 10 195 50 15 10 276 100 15 10 237 100 25 20 338 100 35 30 439 100 25 20 37
10 100 25 20 41
• AC coupled •poly resistor biased
die ~6x47mm2
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
Microstrip minisensors measurements
• BL&GR reverse IV (I_tot, Vrev 0÷200 V)
• Strip current scan (I_strip @ 100V Vrev)
•Bias resistors scan (R_bias @ 100V Vrev)
• Capacitors scan (I_AC @ 20V Vcap)
pitch 50 µm64 strips
pitch 100 µm32 strips
probe-card + automatic prober
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
0 50 100 150 200
Vrev [V]
Ire
v [A
]
I_BL [A]I_GR [A]
SMART2_W108 S1
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
0 50 100 150 200
Vrev [V]
Ire
v [A
]
I_BL [A]I_GR [A]
SMART2_W108 S6
BL & GR I-V reverse currents (1)
FZ wafers
SMART2 - FZ - Bias Line current @ 100V
1E+1
1E+2
1E+3
1E+4
1E+5
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10Sensor #
I_B
L [n
A/c
m2]
SMART2- MCz - Bias Line current @ 100V
1E+1
1E+2
1E+3
1E+4
1E+5
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10Sensor #
I_B
L [n
A/c
m2]
Low dose p-spray
high dose p-spray
MCz wafers
high dose p-spray
Low dose p-spray
Bias-line currents@ 100 V
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
SMART2 - FZ - Bias Line current @ 200V
1E+1
1E+2
1E+3
1E+4
1E+5
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10Sensor #
I_B
L [n
A/c
m2]
SMART2 - MCz - Bias Line current @ 200V
1E+1
1E+2
1E+3
1E+4
1E+5
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10Sensor #
I_B
L [n
A/c
m2]
FZ wafers MCz wafersBias-line currents @ 200 V
BL & GR I-V reverse currents (2)
Low dose p-spray
high dose p-spray
• design dependence of voltage handling capability (pitch and …);• low “break” voltage for high-dose p-spray;• substrate dependence?
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
0 10 20 30
Strip #
Ilea
k [A
]
strip BL
SMART2_W108 S6
Strip current scan (100V)
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
0 20 40 60 80 100
Vrev [V]
Istr
ip [A
]
1-6
7
89-10
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 20 40 60 80 100
Vrev [V]
Vst
rip [A
]
1-6
7
8
9-10
Low current values on border strips
Single strip I-V
Floating strip potential
• high- and low-dose p-spray• 50µm and 100µm pitch• p and n substrates
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
SMART2 - Bias resistance mean values
300
400
500
600
700
800
900
S1 S2 S3 S4 S5 S6 S7 S8 S9 S10Sensor #
Rb
ias
[k
]
500505510515520525530535540545550
0 10 20 30
Strip #
R [K
]
R_tot R_bias
SMART2_W108 S6
Bias resistor scan (100V)
-2.0E-7
-1.5E-7
-1.0E-7
-5.0E-8
0.0E+0
5.0E-8
1.0E-7
1.5E-7
2.0E-7
2.5E-7
-0.10 -0.05 0.00 0.05 0.10
Vstrip [V]
Istr
ip [A
]
1
10
Vback=100V 37 squareswidth=6 µm
Single strip I-V
Single strip scan
high dose p-spray
Low dose p-spray
Single scan uniformity: 0.2% ÷ 2%
No results available for sensors with low breakdown values
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
1.E-11
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
0 10 20 30 40 50 60
Strip #
Ilea
k [A
]
strip BL
SMART2_W44 S5
1.E-13
1.E-12
1.E-11
1.E-10
1.E-09
1.E-08
0 10 20 30 40 50 60
Strip #
Ilea
k [A
]AC
SMART2_W44 S5
AC-scan:~23% sensors have broken capacitors(mainly 50µm pitch devices)
Defects
current-scan:only few sensors
Subtype Split S1 S2 S3 S4 S5 S6 S7 S8 S9 S10
FZ 525 low p-spray
FZ 525 low p-spray
FZ 525 low p-spray
FZ 525 high p-spray
FZ 525 high p-spray
FZ 525 high p-spray
FZ 200 low p-spray
FZ 200 high p-spray
FZ 200 high p-spray
MCz low p-spray
MCz low p-spray
MCz low p-spray
MCz low p-spray
MCz low p-spray
MCz high p-spray
MCz high p-spray
MCz high p-spray
MCz high p-spray
batch or sub problem?No AC-defects are present for p-on-n devices
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
ConclusionConclusion
Problems on n-on-p production:• non-uniformity of the depletion voltage (MCz subs)• design/p-spray-dose interaction (p-stop…?)
To be verified:• effectiveness of actual p-spray
Samples available for the collaboration.
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p batch: samplesn-on-p batch: samples
# sub-type comments
3 FZ 200 p-spray 3E12 3 cut wafers
3 FZ 200 p-spray 5E12 2 cut wafers
6 MCz no OG; p-spray 3E12 3 cut wafers
5 MCz no OG; p-spray 5E12 3 cut wafers
FZ <100> p-type >5000cm 200m
MCz <100> p-type >1.8kcm 300m
N. Zorzi Trento, Feb 28 – Mar 1, 2005Workshop on p-type detectors
n-on-p – CV on diodes (3)n-on-p – CV on diodes (3)
More measurements on MCz wafers
Quite high doping variations!!
Map of the depletion voltageson three wafers.