EMLAB

1전자회로 개요

1. 기초 이론

2. Diode

3. Transistor (MOSFET, BJT)

4. Differential Amplifier

5. Frequency response

6. Feed back

7. Operational amplifier

8. Digital circuit (Logic, Memory, …)

9. Analog circuit

– Filters & tuned amplifier

– Oscillator

– Power amplifier

전자회로 1

전자회로 2

EMLAB

2

Two port network parameters

EMLAB

3

Two port network

Admittance parameters

1I 2I

1V

2V

22221212

12121111

S

S

IVyVyI

IVyVyI

2221212

2121111

VyVyI

VyVyI

The network contains No independent sourcesAdmittance parameter

EMLAB

4

The computation of the parameters follows directly from the definition

02

112

01

111

12

VV

V

Iy

V

Iy

02

222

01

221

12

VV

V

Iy

V

Iy

Measurement of Y-parameters

2

1

2221

1211

2

1

V

V

yy

yy

I

I

11y

212Vy

1I

+

-

1V

2I

-

2V22y

+121Vy

EMLAB

5Example Find the admittance parameters for the network

2221212

2121111

VyVyI

VyVyI

][2

3)

2

11( 1111 SyVI

2111, determine tousedCircuit yy

2I

1212 2

1

21

1VIII ][

2

121 Sy

2212 , determine tousedCircuit yy][

6

5

3

1

2

12222 SyVI

][2

1

65

53

32

312221 SyVII

Next we show one use of this model

EMLAB

6An application of the admittance parameters

2221212

2121111

VyVyI

VyVyI

212

211

6

5

2

12

1

2

3

VVI

VVI

221 4,2 IVAI

The model plus the conditions at theports are sufficient to determine theother variables.

21

21

4

1

6

5

2

10

2

1

2

32

VV

VV

22 4

1VI

][11

2

][11

86

13

2

2

21

AI

VV

VV

Determine the current through the 4 Ohm resistor

EMLAB

7Impedance parameters

2

1

2221

1211

2

1

I

I

zz

zz

V

V

11z

212Iz

1I

+

-

1V22z

121Iz

2I

+

-

2V

+-

2221212

2121111

IzIzV

IzIzV

01

221

01

111

22

II

I

Vz

I

Vz

02

222

02

112

11

II

I

Vz

I

Vz

+-

EMLAB

8

Find the Z parameters

Write the loop equations

)(42

)(42

1222

2111

IIjIjV

IIjIV

24

442

2221

1211

jzjz

jzjz

212

211

24

4)42(

IjIjV

IjIjV

Rearranging,

01

221

01

111

22

II

I

Vz

I

Vz

02

222

02

112

11

II

I

Vz

I

Vz

2221212

2121111

IzIzV

IzIzV

Example

EMLAB

9

2

1

2221

1211

2

1

V

I

hh

hh

I

V

hybrid parameter

2I

-

2V

)mho(22h

+

121Ih

11h

212Vh

1I

+

-

1V

2221212

2121111

VhIhI

VhIhV

01

221

01

111

22

VV

I

Ih

I

Vh

02

222

02

112

11

II

V

Ih

V

Vh

Q1KTC3198

ci

-ccr

+

1igm

r

1i

+

-be

EMLAB

10

221

221

DICVI

BIAVV

02

1

02

1

22

II

V

IC

V

VA

02

1

02

1

22

VV

I

ID

I

VB

-2V

+1I+

-1V

2I

DC

BA

Transmission(ABCD) parameter

2

2

1

1

I

V

DC

BA

I

V

EMLAB

11

2

2

11

11

1

1

I

V

DC

BA

I

V

3I

-2V

+1I+

-1V

2I+

-3V

3

3

22

22

2

2

I

V

DC

BA

I

V

11

11

DC

BA

22

22

DC

BA

3I1I+

-1V

+

-3V

TT

TT

DC

BA

22

22

11

11

DC

BA

DC

BA

DC

BA

TT

TT

Cascade of networks

EMLAB

12

Determine the transmission parameters

221

221

DICVI

BIAVV

02

1

02

1

22

II

V

IC

V

VA

02

1

02

1

22

VV

I

ID

I

VB

jAV

j

jV

1

11

1

12

jV

ICI

jV

2

112

1

0 when 2 I0 when 2 V

112 1

11

1

1

Ij

I

j

jI

jD 1

211 )1(1

2)

1||1(1 Ij

j

jI

jV

jB 2

Example

EMLAB

13

21

221

II

RIVV

221

221

DICVI

BIAVV

R

C

221

21

ICVjI

VV

10

1 R

1

01

Cj

CRjCj

CRjRCRj

CRjCj

RRR

Cj

R

DC

BA

1

21

1

1

10

1

10

1

1

01

10

1

2

Cascade of networks

EMLAB

14

MOSFET

EMLAB

15MOSFET 구조

• Insulator: Silicon dioxide or Polysilicon• Substrate: Single crystal silicon wafer• Gate: Electrode

EMLAB

16Channel Induced with Positive Gate-Source Voltage

tGS VV V) 3~1( tV

EMLAB

17

Gate 전압이 없을 때 pn-np diode 두 개가 붙어 있는 형태이어서 전류의 흐름이 없다 .

Gate 에 약간의 (+) 전압을 가해주면 p-type 반도체에 있던 hole 들이 멀리 밀려나고 , gate 주변은 depletion 영역으로 된다 .

MOS operation : no Drain-Source bias

(1)

(2)

EMLAB

18

전하

전기장

전압

전자 흐름

MOS operation : with Drain-Source bias

(3) (4)

에너지 band

EMLAB

19

(3)

Gate 역할

source drain

EMLAB

20

ADStGSnD VVL

Wki /1

2

1 2

Large signal equivalent

Equivalent circuit

D

A

VvDS

Do I

V

v

ir

GGS

1

Early effect

EMLAB

21Small signal equivalent

dsDSDSgsGSGS VV ,

Small signal 들의 관계만 고려한 등가 회로

D

DSDDDS R

Vi

EMLAB

22

0 gGG iIi dDD iIi

dsDSV

gsGSV or

G

S

D

gsmD gI

gsgsmg

or

G

S

D

)(,

)(2)(2

1

)(2

1

22

2

tGSnmgsmD

gsgstGStGSn

tgsGSnD

VVL

WkggI

VVVVL

Wk

VVL

Wki

0Gi Di

DS

GS or

G

S

D

2)(2

1tGSn V

L

Wk

0gi di

GSV or

G

S

D

0GI DI

2)(2

1tGSnD VV

L

WkI +

DSV

ds

Bias point + small signal equivalent

),,( DDSGS IVVDC bias point :

EMLAB

23Small signal parameter extraction

gs

ds

EMLAB

24Equivalent circuits of MOSFET

oxnntGSnm CkVVL

Wkg ),(

D

Ao I

Vr

EMLAB

25

Heater cathode grid anode

Bipolar Junction transistor

진공관 (3 극관 ) 과 동작원리 같음 .

EMLAB

26Equivalent circuits of BJT

q

kTV

V

Ig T

T

Cm ,

1,,

m

em g

rg

r

C

Aoe I

Vrrr ,)1(

EMLAB

27

1V

2V

2I1I

2221

1211

yy

yy

MOSFET equivalent circuit : Admittance parameter

1I 2I

1V

2V

gsgsmg

or

G

S

D

0

21201221 )(,0

r

VVgIrVgIVI mm

2

1

02

1 100

V

V

rgI

I

m

1I 2I

1V

2V

121Vy

212Vy

11y 22y

0,0 1211 yy

EMLAB

28

1V

2V

2I1I

DC

BA

Admittance-to-ABCD parameter transform

2

2

1

1

I

V

DC

BA

I

V

2221212

2121111

VyVyI

VyVyI

2222121

2121111

IVyVy

VyIVy

2

2

22

12

1

1

21

11

1

0

0

1

I

V

y

y

I

V

y

y

1121122211

22

21

2

2

22

12

1121211

1

11

1

0101

yyyyy

y

y

I

V

y

y

yyyI

V

1121122211

22

21

11yyyyy

y

yDC

BA

EMLAB

29

Signal source

Load resis-tance

output im-pedance

inZ outZ

input im-pedance

SR

in

out LR

2

2

1

1

I

V

DC

BA

I

V

L

in

out

RB

AV

VA

1

1

2

22 IRV L

21221 VR

BAVBIAVV

L

ini outi

Amplifier spec. from ABCD parameters

L

L

L

L

in

inin

RD

C

RB

A

VRD

C

VRB

A

I

V

iZ

2

2

1

1

S

S

out

outout CRA

DRB

I

V

iZ

2

2

2222

22

111221

221

)()(

)(/

IDRBVCRADICV

BIAVR

IRVRVDICVI

BIAVV

SSS

SS

(1) Voltage gain

(3) Input impedance

(4) Output impedance

DCRI

I

i

iA

Lin

outi

1

1

2(2) Current gain 221221 DIICRIDICVI L

S

EMLAB

30The three basic MOSFET amplifier configurations.

EMLAB

31Network parameter for basic MOS amplifiers

220

101221

11)(,0 I

gV

rgVrVgIVI

mmm

1I 2I

1V

2V

2

2

1

1

00

11

I

Vgrg

I

Vmom

Common source amplifier

gsgsmg

or

G

S

D

1I 2I

1V

2V

Common gate amplifier

gs

gsmg

or

G

S D22121

112221

)1(,

)(,0

IrVVrgII

VrVgIVII

oom

om

2

2

1

1

1011

1

I

Vrg

r

rgI

Vom

o

om

2

1

2

1

11

11

V

V

rg

r

rg

r

I

I

om

o

om

o

EMLAB

32

Common drain amplifier

1V

2Vgsmg or

GS

D

gs

1I 2I

221

21221

111

)]([,0

Ig

Vrg

V

rVVgIVI

mom

om

2

2

1

1

00

111

I

Vgrg

I

Vmom

Network parameter for basic amplifiers

EMLAB

33

Type Voltage gainInput imped-

anceOutput imped-

ance

Common source

Common gate

Common drain

)||( Lom Rrg

)||(/1

||

Lom

Lo

Rrg

Rr

Lo

om

Rr

rg

/1

1

LRB

AA

1

L

Lin

RD

C

RB

AZ

S

Sout CRA

DRBZ

om

Lo

rg

Rr

1

or

)1( omSo rgRr

mo gr

1||

Amplifier parameter for basic MOSFET amplifiers

EMLAB

34The three basic BJT amplifier configurations.

EMLAB

35

221221

12211

11,

11

)(,/

IVr

IIg

Vrg

V

rVgIVrVI

omom

om

1I 2I

1V

2V

2

2

1

1

11

11

I

V

r

grgI

V

o

mom

Common emitter amplifier

mg

or

E

B C

1I 2I

1V

2V

Common base amplifier

or

221211

1122211

)1(,

)()(

IrVVrgIrIrV

VrVgIVIIrV

oom

om

2

2

1

1

)1(0

1

1

1

1

01

I

V

rgr

r

rgI

V

r om

o

om

Network parameter for basic BJT amplifiers

r

B

ECmg

r

2

2

1

1

)1(1)1(

1

I

V

rgrr

rrr

rgrI

V

omo

o

om

em rrgr /)1(,/

EMLAB

36

Common collector amplifier

1V

2Vmg or

BE

C

1I 2I

22222

122

1

212211

21212211

)1(1

)1()1(,

)1(

1

])1[(,

)]([),(1

Ir

Vr

rVI

r

VrVI

r

VI

rIIVVIrV

rVVgIIVVVr

I

ooo

o

om

2

2

1

1

)1(

1

)1(

1)1()1(

1

I

V

r

r

r

r

I

V

o

o

r

2

2

)1(

1

)1(

1

1

I

V

r

rr

r

o

eo

e

EMLAB

37

Type Voltage gain Input impedance Output impedance

Common emitter

Common base

Common collec-tor

)||( Lom Rrg

)||(

||

Loe

Lo

Rrr

Rr

Lo

om

Rr

rg

/1

1

LRB

AA

1

L

Lin

RD

C

RB

AZ

S

Sout CRA

DRBZ

r

)1/(

)(

Loe

Loe

Rrr

Rrr

)||)(1( Lo Rrr

or

)||)(1( Somo Rrrgr

1

||

Seo

Rrr

Amplifier parameter for basic BJT amplifiers

EMLAB

38Ideal voltage amplifier

Signal source

Load

(Output impedance)

inR

outrA

1I

+

-

inoutR

inA

2I

+

-

out

inZ 0outZ

(input impedance)

0outRinR

SR

SR

• 입력 임피던스 : 무한대• 출력 임피던스 : 0

LR

Output impedanceinput impedance

LR

Feed back ratio → 0

Voltage gain

S

EMLAB

39Ideal current amplifier

Signal source

Load

(Output impedance)

inR outrG

ini

+

-

inoutR

iniG

outi

+

-

out

0inZ outZ

(input impedance)

SR

SR

• 입력 임피던스 : 0• 출력 임피던스 : 무한대

LR

Output impedanceinput impedance

LR

Feed back ratio → 0

Current gain

SI

SI

EMLAB

40Series of unilateral amplifiers (zero feed-back)

Signal source

Load

1,inR

1I

+

-

11,outR

11A

2I

+

-2

SR

SR

LR

LR

2,inR

2I

2,outR

22A

3I

+

-

3S

Sins

in

RR

R

1,

1,1 11

2,1,

2,2 ARR

R

inout

in

222,

3 ARR

R

Lout

L

Lout

L

inout

in

ins

inS RR

RA

RR

RA

RR

R

2,2

2,1,

2,1

1,

1,3