ICC Proprietary 1

MEMS DEVICE WAFER LEVEL PACKAGINGTECHNICAL PRESENTATION

Customer Device Wafer

ICC Proprietary 2

Process Modification Required as follows:- Reduction of Bond pads to half of existing bond pads size.

- Since bond pad size has been reduced, the distance between 2 chip isolation lines will be more now and additional scribing / dicing area can be provided for our SWP

Process Flow Changes:New smaller Bond Pads Passivation Bond Pad Opening Testing Ship Wafers to ICC

TECHNICAL PROPOSAL FOR ULTRASOUND MEMS DEVICE WLP

ICC Proprietary 3

TECHNICAL PROPOSAL FOR MEMS DEVICE WLP

Chip 1

Chip 1

ICC Proprietary 4

TECHNICAL PROPOSAL FOR MEMS DEVICE WLP

Chip 1

Chip 1

ICC Proprietary 5

Chip 1

Chip 2

Chip 3

Chip 4

Schematic plan showing a possible EXISTING chip configuration

Active Area

Scribe / Dicing Area

Bond Pads

Isolation line

Bond pad size= 100 micron Sq.

ICC Proprietary 6

Chip 2a

Proposed NEW chip configuration

Bond pad size= half original pad

Active Area

Scribe / Dicing Area

New Bond PadsChip 2a

Chip 2a

ICC Proprietary 7

Proposed NEW chip configuration

Chip 2a

Bond pad size= 50 micron Sq.With 20 micron SqOpening at center.

ICC Proprietary 8

Proposed NEW chip configuration

Chip 2a

Chip 2a

Via fabrication At the scribe zoneVia Size 20um Sq. X 50 um

ICC Proprietary 9

Proposed NEW chip configuration

Chip 2a

Chip 2a

Via passivation PECVD process

ICC Proprietary 10

Proposed NEW chip configuration

Chip 2a

Chip 2a

Interconnection At the scribe zone

ICC Proprietary 11

Proposed NEW chip configuration

Chip 2a

Chip 2a

Top Passivation layer

ICC Proprietary 12

Proposed NEW chip configuration

Chip 2a

Chip 2a

Glass wafer Bonding

ICC Proprietary 13

Proposed NEW chip configuration

Backside of the Wafer after Back grinding and polishing

ICC Proprietary 14

Proposed NEW chip configuration

1st Passivation on backside

ICC Proprietary 15

Proposed NEW chip configuration

Back side pad opening

ICC Proprietary 16

Proposed NEW chip configuration

Routing to new Bump pads

ICC Proprietary 17

Proposed NEW chip configuration

2nd PassivationFilm on bump pads

ICC Proprietary 18

Proposed NEW chip configuration

UBM pads

ICC Proprietary 19

Proposed NEW chip configuration

Solder Bumping

ICC Proprietary 20

Proposed NEW chip configuration

Dicing Process

ICC Proprietary